• Title/Summary/Keyword: 스트립두께

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A Study on the development of high gain and high power Ka-band hybrid power amplifier module (고출력, 고이득 Ka-band 하이브리드 전력증폭기 모듈 개발에 관한 연구)

  • Lee, Sang-Hyo;Kim, Hong-Teuk;Jeong, Jin-Ho;Kwon, Young-Woo
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.38 no.11
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    • pp.49-54
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    • 2001
  • In this work, we developed a Ka-band hybrid 4-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions. It has high gain and high output power characteristics. We used a 10 mil- thickness duroid substrate to fabricate this power amplifier and waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32 40 GHz. The measured results of power amplifier module showed over 1W output power at 36.1 - 37.1 GHz. And it showed 31 dBm output power, 24 dB power gain and 15 % power-added efficiency(PAE) at 36.5 GHz.

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Numerical Analysis of Thermal Deformation of a PCB for Semiconductor Package at Panel, Strip and Unit Levels (수치해석을 이용한 판넬과 스트립 및 유닛 레벨 반도체 패키지용 PCB의 열변형 해석)

  • Cho, Seunghyun;Ko, Youngbae
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.23-31
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    • 2019
  • In this study, we conducted numerical analyses using the Taguchi method and finite element method to calculate the thermal deformation of a printed circuit board and the effect of design factors on the thermal deformation. Analysis results showed that the thermal deformation of the panel had the strongest effect on the thermal deformation and shape of the strip and unit. In particular, the deformation in the z direction was larger than that in the xy-plane direction. The effect of design factors and the design conditions for reducing the thermal deformation of the panel and strip changed at the unit level. Therefore, it is recommended that panel-level thermal deformation must be controlled to reduce the final thermal deformation at the unit level because the thermal deformation of the strip strongly affects that of the unit.

Miniaturization of GPS Microstrip Antenna for Small Drone (초소형 드론 탑재용 GPS 대역 마이크로스트립 안테나의 소형화)

  • Kim, Wan-Ki;Woo, Jong-Myung
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.21 no.3
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    • pp.62-72
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    • 2022
  • In this study, a miniaturized GPS band(L1 : 1.575 GHz) antenna that can be mounted on a small drone is proposed. The miniaturization was designed by applying the perturbation method based on the λ/4 microstrip antenna and lengthening the current path at the edge of the patch. The miniaturized antenna was fabricatred such that it could be attached to the surface of styrofoam(εr=1.06, t=10 mm) having a size of 10 mm × 9 mm × 10 mm (0.05 λ × 0.05 λ × 0.05 λ). The thickness and length of the feeding line and the spacing between short stubs were adjusted for impedance matching. S11 was found to be -18.8 dB at the center frequency of the fabricated antenna, 1.575 GHz. The radiation pattern measurement results show that the maximum gain of Eθ is 1.87 dBi in 0 directions in the xz-plane, and that Eθ is an omnidirectional characteristic with an average gain of -1.7 dBi in the yz-plane. It was found that the antenna can be used as an ultra-small microstrip antenna, which can be mounted on a small dron for GPS, and is capable of preserving a reduction ratio of 98.8% as compared to a λ/2 microstrip patch antenna.

Development of Power Divider for CDMA by Thin Film Technology (THIN FILM 기술을 이용한 CDMA용 전력분배기 개발)

  • 정동언
    • Journal of the Microelectronics and Packaging Society
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    • v.2 no.2
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    • pp.19-30
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    • 1995
  • 일반적으로 마이크로 웨이브 영역에 사용되는 마이크로스트립 전송로는 후막 전도 선을 이용하여 RF 모듈을 구현할수 있으나 선폭의 고해상도가 전체 특성에 큰 영향을 미치 므로 고정도의 박막을 이용한 RF 모듈이 많이 개발되고 있다. 따라서 본 논고에서는 박막 제조기술을 이용하여 마이크로 웨이브 하이브리드의 한 종류인 WILKINSON 전력 분배기 를 개발하였고 공정 변수를 최적화함으로써 고특성 고신회성의 전력 분배기를 구현할 수 있 었다. 먼저 전도선의 두께의 영향을 고찰하였으며 제조 공정에 있어 GROUND 방법 /HOUSING 형상을 개선함으로써 용이하게 전력 분배기를 제조하였다. 마지막으로 MIL 규 격에 따른 전력분배기의 신뢰성 시험 항목을 제시하였고 이에 따라 정격 전력을 계산, 측정 하였다.

Radiation Characteristics of Microstrip Patch Antennas with a Finite Grounded Square Substrate (유한한 정사각형 기판을 가지는 마이크로스트립 패치 안테나의 방사 특성)

  • Kim, Tae-Young;Park, Jea-Woo;Kim, Boo-Gyoun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.46 no.6
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    • pp.118-127
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    • 2009
  • Effect of a finite square substrate plane on the radiation characteristics of a microstrip patch antenna is investigated. Excellent agreements between the simulation and measured results on the radiation characteristics of patch antennas for various square substrate thicknesses and sizes are obtained. The effect of a square substrate plane on the resonant frequency and bandwidth is small, while that on the radiation pattern is large. As the substrate thickness increases, the variations of the gain of the broadside radiation, the direction of the maximum radiation, and the radiation pattern increase for the variation of a substrate size. The maximum gain difference between the broadside radiation and back radiation and the large gain of broadside radiation are obtained when the length of a side of a square substrate plane is $0.8\;{\lambda}_0$.

Analysis of the Electromagnetic Scattering by Conducting Strip Gratings with 2 Dielectric Layers On a Grounded Plane (접지평면위에 2개의 유전체층을 가지는 저항띠 격자구조에서의 전자파산란 해석)

  • 윤의중
    • The Journal of Information Technology
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    • v.4 no.3
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    • pp.77-86
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    • 2001
  • In this paper, Electromagnetic scattering problem by a resistive strip grating with 2 dielectric layers on a ground plane according as resistivity of resistive strip, relative permittivity and thickness of dielectric layers, and incident angles of a electric wave is analyzed by applying the PMM (Point Matching Method) known as a numerical procedure. The scattered electromagnetic fields are expanded in a series of floquet mode functions. The boundary conditions are applied to obtain the unknown field coefficients and the resistive boundary condition is used for the relationship between the tangential electric field and the electric current density on the strip. According as the relative permittivity and the thickness of layers are increased, the values of the geometrically normalized reflected power have a high value and the values of strip width are moved toward a high value going from left to right. When the resistivity of this paper has a value of zero, the numerical results of the geometrically normalized reflected power show in good agreement with those by the PMM of existing paper. Then, the most energys of the sharp variation point in minimum values of the geometrically normalized reflected power are scattered in direction of the other angles except incident angle.

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Evaluation of electrical characterization and critical length of interconnect for high-speed MCM (고속 MCM 배선의 전기적 특성 및 임계길이 평가)

  • 이영민;박성수;주철원;이상복;백종태;김보우
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.10
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    • pp.67-75
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    • 1998
  • This paper examined the geometrical variables of microstrip to control the characteristic impedance of MCM interconnect and also with respect to the practical requirements, evaluated the critical lengths for attenuation, propagation delay, and crosstalk at 500 MHz frequency compared to at 50 MHz frequency. With the illustration of each MCM-L and MCM-D interconnect having 50 characteristic impedance, it was revealed that the most important geometrical variables to control the characteristic impedance of microstrip are eventually dielectric thickness and line width. In particular, the dielectric thickness of MCM-D interconnect must be controlled with tolerance below 2 m. It is clear that the attenuation does not give rise to signal distortion in the range of up to 500MHz frequency for both MCM-L and MCM-D interconnects. However, the propagation delay is so significant that both MCM-L and MCM-D interconnects should be matched with load at the 500 MHz frequency. For the MCM-D interconnect, the crosstalk voltage would not be high to generate the wrong signal on the neighboring line at 500 MHz frequency, but the MCM-L interconnect could not be used due to severe crosstalk. Eventually, it is clear that the transmission line behavior must be studied for the design of MCM substrate at the 500 MHz frequency.

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Analysis for Shielding Effectiveness of Metal Shielding Layer within Near-Field of Noise Source (노이즈 소스 근거리장에 위치한 금속 차폐막의 차폐효과 분석)

  • Lee, Won-Seon;Lee, Won-Hui;Hur, Jung
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.19 no.3
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    • pp.59-65
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    • 2019
  • The EMI shielding effectiveness of the shielding layer thickness was analyzed when the metal shielding layer was placed in the near field of the magnetic probe and the noise source. Microstrip lines were used as noise source, and graphite and ferrite were selected as metal shielding materials. The magnetic probe uses the electromagnetic radiation measurement method using the magnetic probe by applying the IEC 61967-6 method. The transmission coefficient between the microstrip line and the magnetic probe was analyzed. The distance between the two was 1 mm for a single shielding layer and 5 mm for a multiple shielding layer. The thickness of the shielding layer was changed to 5 um, 10 um, 30 um, and 50 um. When the frequency was changed from 150 kHz to 1 GHz, a maximum shielding effectiveness (SE) of 44.9 dB was obtained.

Thickness Determination of Ultrathin Gate Oxide Grown by Wet Oxidation

  • 장효식;황현상;이확주;조현모;김현경;문대원
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.107-107
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    • 2000
  • 최근 반도체 소자의 고집적화 및 대용량화의 경향에 다라 MOSFET 소자 제작에 이동되는 게이트 산화막의 두께가 수 nm 정도까지 점점 얇아지는 추세이고 Giga-DRAM급 차세대 UNSI소자를 제작하기 위해 5nm이하의 게이트 절연막이 요구된다. 이런 절연막의 두께감소는 게이트 정전용량을 증가시켜 트랜지스터의 속도를 빠르게 하며, 동시에 저전압동작을 가능하게 하기 때문에 게이트 산화막의 두께는 MOS공정세대가 진행되어감에 따라 계속 감소할 것이다. 따라서 절연막 두께는 소자의 동작 특성을 결정하는 중요한 요소이므로 이에 대한 정확한 평가 방법의 확보는 공정 control 측면에서 필수적이다. 그러나, 절연막의 두께가 작아지면서 게이트 산화막과 crystalline siliconrksm이 계면효과가 박막의 두께에 심각한 영향을 주기 때문에 정확한 두께 계측이 어렵고 계측방법에 따라서 두께 계측의 차이가 난다. 따라서 차세대 반도체 소자의 개발 및 양산 체계를 확립하기 위해서는 산화막의 두께가 10nm보다 작은 1nm-5nm 수준의 박막 시료에 대한 두께 계측 방법이 확립이 되어야 한다. 따라서, 본 연구에서는 습식 산화 공정으로 제작된 3nm-7nm 의 게이트 절연막을 현재까지 알려진 다양한 두께 평가방법을 비교 연구하였다. 절연막을 MEIS (Medim Energy Ion Scattering), 0.015nm의 고감도를 가지는 SE (Spectroscopic Ellipsometry), XPS, 고분해능 전자현미경 (TEM)을 이용하여 측정 비교하였다. 또한 polysilicon gate를 가지는 MOS capacitor를 제작하여 소자의 Capacitance-Voltage 및 Current-Voltage를 측정하여 절연막 두께를 계산하여 가장 좋은 두께 계측 방법을 찾고자 한다.다. 마이크로스트립 링 공진기는 링의 원주길이가 전자기파 파장길이의 정수배가 되면 공진이 일어나는 구조이다. Fused quartz를 기판으로 하여 증착압력을 변수로 하여 TiO2 박막을 증착하였다. 그리고 그 위에 은 (silver)을 사용하여 링 패턴을 형성하였다. 이와 같이 공진기를 제작하여 network analyzer (HP 8510C)로 마이크로파 대역에서의 공진특서을 측정하였다. 공진특성으로부터 전체 품질계수와 유효유전율, 그리고 TiO2 박막의 품질계수를 얻어내었다. 측정결과 rutile에서 anatase로 박막의 상이 변할수록 유전율은 감소하고 유전손실은 증가하는 결과를 나타내었다.의 성장률이 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 둔화됨을 볼 수 있다. 또한 Silane 가스량이 적어지는 영역에서는 가스량의 감소에 의해 성장속도가 줄어들어 성장률이 Silane가스량에 의해 지배됨을 볼 수 있다. UV-VIS spectrophotometer에 의한 비정질 SiC 박막의 투과도와 파장과의 관계에 있어 유리를 기판으로 사용했으므로 유리의투과도를 감안했으며, 유리에 대한 상대적인 비율 관계로 투과도를 나타냈었다. 또한 비저질 SiC 박막의 흡수계수는 Ellipsometry에 의해 측정된 Δ과 Ψ값을 이용하여 시뮬레이션한 결과로 비정질 SiC 박막의 두께를 이용하여 구하였다. 또한 Tauc Plot을 통해 박막의 optical band gap을 2.6~3.7eV로 조절할 수 있었다. 20$0^{\circ}C$이상으로 증가시켜도 광투과율은 큰 변화를 나타내지 않았다.부터 전분-지질복합제의 형성 촉진이 시사되었다.이것으로 인하여 호화억제에 의한 노화 방지효과가 기대되었지만 실제로 빵의 노화는 현저히 진행되었다

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Effect of Finite Substrate Plane on the Radiation Characteristics of Microstrip Patch Antennas (기판의 크기가 마이크로스트립 패치 안테나의 방사특성에 미치는 효과)

  • Kim, Sang-Woo;Kim, Tae-Young;Kim, Boo-Gyoun;Shin, Jong-Dug;Kim, Se-Yun
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.11
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    • pp.33-41
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    • 2007
  • Effect of finite substrate plane on the radiation characteristics of microstrip patch antennas is investigated. The variation of the characteristics of the radiation pattern due to the change of the length of a substrate is much larger than that due to the change of the width of a substrate. As the thickness of a substrate increases, the characteristics of the radiation pattern reveal more sensitive for the change of the size of a substrate.