• The Journal of Natural Sciences
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• v.13 no.1
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• pp.25-33
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• 2003

Experiment setup was designed to observe the grip pressure and the center of gravity during golf swing. The experimental results of grip pressure and center of gravity during swing showed the constant type in the envelop of force intensity of a stable KPGA pro as a function of time.

• Journal of IKEEE
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• v.22 no.1
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• pp.74-79
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• 2018

We analyzed the relationship between center potential and subthreshold swing (SS) of Junctionless Cylindrical Surrounding Gate (JLCSG) and Junctionless Double Gate (JLDG) MOSFET. The SS was obtained using the analytical potential distribution and the center potential, and SSs were compared and investigated according to the change of channel dimension. As a result, we observed that the change in central potential distribution directly affects the SS. As the channel thickness and oxide thickness increased, the SS increased more sensitively in JLDG. Therefore, it was found that JLCSG structure is more effective to reduce the short channel effect of the nano MOSFET.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.2
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• pp.56-62
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• 2002

A new high speed and low voltage swing on-chip BUS using threshold voltage swing driver and dual sense amplifier receiver is proposed. The threshold voltage swing driver reduces the rising time in the bus to 30% of the full CMOS inverter driver and the dual sense amplifier receiver increases twice the throughput. of the conventional reduced-swing buses using sense amplifier receiver. With threshold voltage swing driver and dual sense amplifier receiver combined, approximately 60% speed improvement and 75% power reduction are achieved in the proposed scheme compared to the conventional full CMOS inverter for the on-chip bus.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.10
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• pp.2267-2272
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• 2012

This study has presented the analysis of subthreshold swings based on scaling theory for double gate MOSFET. To solve the analytical potential distribution of Poisson's equation, we use Gaussian function to charge distribution. The scaling theory has been used to analyze short channel effect such as subthreshold swing degradation. These scaling factors for gate length, oxide thickness and channel thickness has been modified with the general scaling theory to include effects of double gates. We know subthreshold swing degradation is rapidly reduced when scaling factor of gate length is half of general scaling factor, and parameters such as projected range and standard projected deviation have greatly influenced on subthreshold swings.

• The Journal of Natural Sciences
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• v.14 no.2
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• pp.1-14
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• 2004

The observation of the various swing parameters and its effect on golfer swing are tatally analyzed. The golf ball impact and flies away, therefore it must be controlled bofore ball impact. The purpose of this paper is that the cause of hook and slice are found and the posture of swing is corrected. The trajectory after ball impact is on the $\Delta$-plane, which is consisted of the normal vector on club face and the swing velocity vector of club head including the initial celocity and the spin axis after ball imfact. In order to correct the miss shot in golf swing, this paper is is shown that the theoretical review and study is discussed to use the D-plane and $\Delta$-plane.

• The Journal of the Korea Contents Association
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• v.13 no.10
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• pp.523-532
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• 2013

When the golf club hits the ground prior to making contact with the golf ball, we define it as 'fat shot'. The aim of this research was to investigate the difference between normal shot and fat shot in golf. Five candidates playing as recreational golfer participated in this research and they were all right-handed people. Time phase between each event, wrist cocking angle, elbow extension-flexion angle, backswing height, pelvis angle, thorax angle, L-GRF, R-GRF, pelvis linear velocity, pelvis angular velocity and COG path were calculated. For statistical analysis the paired T-test was used. An early un-cocking, an early right elbow extension and impact with leaving their weight behind foot were not reasons of fat shot. Backswing height, X-Factor, pelvis angle and thorax rotation angle were not different between normal shot and fat shot. But we could find a pattern of abrupt pelvic movement and weight shift to target direction just before impact in case of fat shot. In addition fat shot showed time-delayed and small value of pelvis linear velocity pattern to upward during downswing phase as against normal shot.

• Korean Journal of Applied Biomechanics
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• v.18 no.4
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• pp.143-149
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• 2008

The purpose of this study was to investigate the muscle activities of pectoralis major, upper serratus, lat dorsi, anterior deltoid, rhomboids, infraspinatus, and posterior deltoid using Noraxon 8 channels EMG system during T-ball swing in children with Down syndrome. Five Down syndrome, one healthy children, and one baseball adult player were participated in the study. Down syndrome's children showed higher muscle activity than one healthy children and one baseball adult player during address to backswing and backswing to impact swing phase. While Down syndrome's children showed lower muscle activity than one healthy children and one baseball adult player during impact to follow swing phase. The strength of the pectoralis major and upper serratus muscle may help to improve T-ball swing movement during impact to follow swing phase.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.8
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• pp.1764-1770
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• 2011

In this paper, the subthreshold swings for doping distribution in the channel have been analyzed in double gate MOSFET(DGMOSFET). The DGMOSFET is extensively been studying since it can lessen the short channel effects(SCEs) as next -generation nano device. The degradation of subthreshold swing(SS) known as SCEs has greatly influenced on application of digital devices, and has been analyzed for structural parameter and variation of channel doping profile in DGMOSFET. The analytical model of Poisson equation has been derived from nonuniform doping distribution for DGMOSFET. To verify potential and subthreshold swing model based on this analytical Poisson's equation, the results have been compared with those of the numerical Poisson's equation, and subthreshold swing for DGMOSFET has been analyzed using these models.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.4
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• pp.885-890
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• 2014

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The Gaussian function as doping distribution is used to approch experimental results. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.698-701
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• 2013

This paper has presented the change of subthreshold swings for gate oxide thickness of asymmetric double gate(DG) MOSFET, and solved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET is three terminal device. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine the bias voltage and oxide thickness for top and bottom gates. As a result to observe the subthreshold swings for the change of top and bottom gate oxide thickness, we know the subthreshold swings are greatly changed for gate oxide thickness. Especially we know the subthreshold swings are increasing with the increase of top and bottom gate oxide thickness, and top gate oxide thickness greatly influences subthreshold swings.