• Current Photovoltaic Research
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• 제2권4호
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• pp.173-176
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• 2014

We have investigated the seed layer formation of front side contact using the inkjet printing process. Conductive silver ink was printed on textured Si wafers with 80 nm thick $SiN_x$ anti reflection coating (ARC) layers and thickened by light induced plating (LIP). The inkjet printable sliver inks were specifically formulated for inkjet printing on these substrates. Also, a novel method to prepare nano-sized glass frits by the sol-gel process with particle sizes around 5 nm is presented. Furthermore, dispersion stability of the formulated ink was measured using a Turbiscan. By implementing these glass frits, it was found that a continuous and uniform seed layer with a line width of $40{\mu}m$ could be formed by a inkjet printing process. We also investigated the contact resistance between the front contact and emitter using the transfer length model (TLM). On an emitter with the sheet resistance of $60{\Omega}/sq$, a specific contact resistance (${\rho}_c$) below $10m{\Omega}{\cdot}cm^2$ could be achieved at a peak firing temperature around $700^{\circ}C$. In addition, the correlation between the contact resistance and interface microstructures were studied using scanning electron microscopy (SEM). We found that the added glass particles act as a very effective fire through agent, and Ag crystallites are formed along the interface glass layer.

• 한국세라믹학회지
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• 제33권2호
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• pp.149-154
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• 1996

ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.

• 한국세라믹학회지
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• 제32권12호
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• pp.1357-1368
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• 1995

Nasigels of composition Na0.75Zr2PSi2O12 and Na3Zr2PSi2O12 have been synthesized by the sol-gel technique using metal alkoxide precursors. The monolithic dry gels of Na0.75Zr2PSi2O12 with no crack have been prepared by the control of the shrinkage rte, but gels of Na3Zr2PSi2O12 were impossible to prepare without cracking. The gels treated up to 80$0^{\circ}C$ led to the formtion of glass but the glasses were converted to the crystalline phases at above this temperature. Crystaline phases precipitated from the Na0.75Zr2PSi2O12 glass were NASICON-like phase, Na2Si2O5, and free Zirconia. Phase that precipitated from the Na3Zr2PSi2O12 was only rhombohedral NASICON. For Na0.75Zr2PSi2O12 gels, framework of PO4 tetrahedra and SiO4(PO4) tetrahedra formed at low temperature but changed to that of SiO4 and SiO4(PO4) tetrahedras as it were crystallized. In the case of Na3Zr2PSi2O12 gel, framework of isolated PO4 and SiO4 tetrahedras formed at low temperature but changed to SiO4(PO4) tetrahedra framework which usually formed in the NASICON crystal after crystallization at high temperature. The gels treated up to 80$0^{\circ}C$ contained the residual water. The ionic conduction was attributed to the motion of proton and Na+ ion at low (up to 150~20$0^{\circ}C$) and high temperatures, respectively. As the temperature of heat treatment increased, ionic conductivity gradaully increased with the extent of precipitation of crystalline phase.

• 한국전기전자재료학회논문지
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• 제12권1호
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• pp.62-68
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• 1999

Ferroelectric $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$(x=0, 0.1, 0.2, 0.3) thin films were deposited on $Pt/SiO_2/Si$ substrate by MOD(Metalorganic Decomposition) process. Metal carboxylate and metal alkoxide were used as precursors, and 2-methoxyethanol, xylene as solvents. After spin coating, thin films were pre-annealed at $400^{\circ}C$, followed by RTA(Rapid Thermal Annealing) and final annealing at $800^{\circ}C$ in oxygen atmosphere. These procedures were repeated three times to obtain thin films with the thickness of $2000{\AA}$. To enhance the nucleation and growth of layered-perovskite phase, thin films were rapid-thermally annealed above $720^{\circ}C$ in oxygen atmosphere. As RTA temperature increased, fluorite phase was transformed to layered-perovskite phase. And the change of Nb contents affected dielectric / electrical properties and microstructure. The ferroelectric characteristics of $Sr_{0.7}/B_{2.3}(Ta_{1-x}Nb_x)_2O_9$ thin film were Pr=8.67 $\mu{C}/cm^2$, Ec=62.4kV/cm and $I_{L}=1.4\times10^{-7}A/cm^2$ at the applied voltage of 5V, respectively.

• 한국세라믹학회지
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• 제32권5호
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• pp.617-625
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• 1995

In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.403-407
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• 2018

In this study, double layer KTN/STO thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate, their structural and electrical properties were measured according with the number of STO coatings, and their applicability to microwave materials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectric constant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of the dielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximum value of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.

• 한국세라믹학회지
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• 제34권2호
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• pp.216-224
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• 1997

TEOS와 에탄올의 양을 고정하고 H2O/TEOS의 몰비가 2.6-59.0이 되는 범위에서 염산촉매를 사용하여 다공성 실리카 세라믹을 제조하였다. 서로 다른 조성의 솔 9종을 만든 후 젤화시간 측정, TG/DTA에 의한 건조시료의 열분석 및 FT-IR과 X-ray diffractometer에 의한 중간생성물의 특성분석을 수행하였고 50$0^{\circ}C$까지 열처리한 시료의 FT-IR에 의한 SiO2폴리머 분석, N2-adsorption isotherm을 이용한 비표면적과 기공크기분포 조사 및 TEM에 의한 SiO2폴리머의 형태와 기공의 변화를 조사하였다. 적용된 조성 및 촉매의 농도에서 최소 젤화반응시간은 TEOS1몰달 물의 양이 약 11몰에서, 가장 높은 중합도는 약 8-18몰에서, 그리고 가장 큰 비표면적값은 약 11몰에서 보였다. 이것은 물의 양이 약 11몰일 때 중합반응이 가장 빠르게 진행하였음을 의미한다. 결론적으로, 물의 양이 증가함에 따라서 약 11몰까지는 반응이 빠르게 진행되나 그 이상의 물이 사용될 경우 과잉의 물이 반응저해요인으로 작용하여 젤화시간의 지연 및 비표면적의 감소를 보인다.

• Korean Chemical Engineering Research
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• 제51권6호
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• pp.774-779
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• 2013

용액공정이 가능한 5 nm 정도의 입경을 가지는 이산화티탄 단분산 나노졸을 솔-젤법을 통하여 합성하였다. 결정성 이산화티탄 나노졸의 저온 스핀코팅 공정을 통하여, 거친 표면을 가지는 FTO 투명전극 기판에 블록킹층을 형성하였다. 이산화티탄 나노졸을 블록킹층에 코팅을 함으로써 거친 FTO 표면을 점진적으로 완만하게 할 수 있었다. 1, 2.5, 5, 및 10 중량%의 결정성 이산화티탄 나노 졸을 FTO 투명전극 기판에 스핀코팅하여 29, 38, 62 및 226 nm 두께의 이산화티탄 블록킹층을 형성할 수 있었다. 5 및 10 중량%의 결정성 이산화티탄 나노 졸의 경우 제곱평균 48.7 nm의 표면조도를 가지는 FTO의 투명전극 표면을 효과적으로 평탄화할 수 있었으며 이로 인해 1차원 형태의 산화아연 나노막대를 효과적으로 기판에 수직으로 배향할 수 있었다.

• 청정기술
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• 제21권4호
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• pp.271-277
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• 2015

본 연구에서는 효율적인 광 전기화학적 수소제조를 위하여 광촉매로써 상용화 촉매인 P25-티타니아와 합성한 Ag_xO를 적정 질량비로 혼합한 촉매를 사용하였다. Ag_xO는 일반적인 솔-젤법으로 합성하였으며, 은 용액의 안정화를 위해 합성과정 중에 수산화테트라메틸암모늄을 첨가하고 열처리 온도를 -5, 25, 50 ℃로 다양화시켜 세 가지 형태의 산화은을 얻었다. 합성한 Ag_xO의 물리화학적 특성은 X-선 회절분석법(XRD), 주사전자현미경(SEM), 자외선-가시선 분광광도계(UV-Visible spectroscopy), X-선 광전자 분광법(XPS)을 이용하여 확인하였다. 물/메탄올(무게 비 1:1) 혼합용액을 광분해 한 결과, 순수 P25-티타니아보다 Ag_xO가 첨가된 혼합촉매에서 현저히 높은 양의 수소가 발생하였다. 보조 산화제로써 H₂O₂를 첨가한 경우 그리고 Ag_xO의 합성온도가 50 ℃일 때 가장 높은 수소 제조효율을 나타내었다. 특히, 0.9 g의 P25-티타니아와 0.1 g의 Ag_xO (50 ℃)를 혼합한 촉매를 사용하였을 때 8시간 반응하는 동안에 13,000 μmol의 수소가 발생하였다.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.164-168
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• 2024

(La_0.7Sr_0.3)(Mn_1-xFe_x)O₃ (LSMFO) (x = 0.03, 0.06, 0.09, 0.12) precursor solution are prepared by sol-gel method. LSMFO thin films are fabricated by the spin-coating method on Pt/Ti/SiO₂/Si substrate, and the sintering temperature and time are 800℃ and 1 hr, respectively. The average thickness of the 6-times coated LSMFO films is about 181 to 190 nm and average grain size is about 18 to 20 nm. As the amount of Fe added in the LSMFO thin film increased, the resistivity decreased, and the TCR and B_25/65-value increased. Electrical resistivity, TCR and B_25/65-value of the (La_0.7Sr_0.3)(Mn_0.88Fe_0.12)O₃ thin film are 0.0136 mΩ-cm, 0.358%/℃, and 328 K at room temperature, respectively. The resistivity properties of LSMFO thin films matched well with Mott's VRH model.