• 한국세라믹학회지
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• 제34권9호
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• pp.941-948
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• 1997

CuCl nanocrystallites dispersed nonlinear optical silica and borosilicate glasses were fabricated by sol-gel process. CuCl powder was dissolved in TEOS(Si(OC2H5)4) and TMB((CH3O)3B), precursors of silica and borosilicate glasses, with ethanol, water and HCl, and precipitated through the heat treatment in the matrix glass. The optical properties of CuCl doped glasses were measured using the spectrophotometer at room temperature and low temperature(77K); Z1, 2 and Z3 exciton peaks from the absorption spectra, were observed at about 370 nm and 380 nm, respectively. The average radius of nanocrystallites, calculated from the blue shift of Z3 excitons, was measured according to annealing temperature and time. The precipitation temperature of CuCl nanocrystallites was decreased when boron was added to silica glass. Increase of annealing temperature and time made average radius of nanocrystallites saturated about 2 nm.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권11호
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• pp.511-516
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• 2002

$TiO_2-SnO_2$ thin films are fabricated using sol-gel method. In case the amount of water required hydrolysis smaller than that for stoichiometry, Ti sol forms clear sol which has normal chain structure. On the contrary, in case the amount of water required hydrolysis larger than that for stoichiometry, Ti sol forms suspended sol which has cluster structure. The thickness of thin films increase about $0.03{\sim}0.04{\mu}m$ every a dipping. The permittivity and dissipation factor of $TiO_2-SnO_2$ thin films decrease with increasing frequency. Thin films show semiconductive characteristics above $400^{\cric}C$.

• 한국세라믹학회지
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• 제31권6호
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• pp.660-670
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• 1994

Transparent, crack-free dried gel monoliths with a composition of LiZr1.5Si2P2O12.5 have been synthesized by the low temperature polymerization of the Sol-Gel technique using metal alkoxides as starting materials. After initial reaction (20~40 min), each metal alkoxide closely paralleled each other during the hydrolysis reactions. The safe drying conditions of gels with no creaks the control of the shrinkage rate. The gels converted into the glass by heat treatment at 75$0^{\circ}C$. FTIR data indicated that the gels were phase separated into silicarich and phosphate-rich regions with the lithium. XRD results showed the formation of crystalline LiH2PO4. The gels dried at 15$0^{\circ}C$ or fired at 75$0^{\circ}C$ contained the residual water. The high ionic conductivity at room temperature for these gels was attributed to the motion of protons.

• 반도체디스플레이기술학회지
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• 제5권3호
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• pp.17-21
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• 2006

The oxygen barrier films were formed on poly(ethylene terephthalate) (PET) substrate by a sol-gel process using aminoalkoxysilanes. The coating layers were characterized by FT-IR and SEM. The oxygen permeability coefficients of coating films were measured by variable volume method, and then the influences of solvent ratio in sol and film drying temperature on the oxygen barrier properties were investigated. The aminoalkoxysilane coating films exhibited much higher oxygen barrier properties than PET film. The oxygen permeability coefficient of the film coated with each of APTEOS and APTMOS was measured to be $2.96{\times}10^{-6}$ and $3.05{\times}10^{-5}\;GPU$, respectively, while that of PET film was $1.16{\times}10^{-4}\;GPU$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.281-282
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• 2007

$Mg_4Nb_2O_9$ (MN) ceramics have been prepared by a sol-gel method. The powder characteristics, phase evolution, and microwave dielectric properties of the MN were investigated in various processing conditions such as sol-gel compositions, calcination, and sintering temperatures. A Qxfo value of 111,717 GHz with a ${\varepsilon}_r$ of 10.59 and a ${\tau}_f$ of $+1.736\;ppm/^{\circ}C$ was obtained after sintering at $1300^{\circ}C$ for 5 h.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Korean Chemical Engineering Research
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• 제45권4호
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• pp.328-334
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• 2007

2-propanol/acetone/hydrogen 계 화학반응 열펌프 시스템은 발전소의 폐열 등을 이용하기 위한 가장 적합한 반응계로 알려져 있다. 솔-젤법을 이용하여 2-propanol 탈수소화 반응용 5 wt% Pt-alumina 촉매를 다양한 형태로 제조하여 각각의 특성을 알아보았고 각각의 반응성을 비교하였다. Pt-alumina xerogel 촉매는 기존의 담지촉매보다 우수한 반응성을 보였으며 또한 지속성도 우수한 것으로 나타났다. 또한, Pt-alumina aerogel 촉매가 반응속도 면에서 가장 우수한 결과를 보였다. Aerogel 촉매의 지속성을 유지시키기 위해서는 충분한 시간의 숙성과정이 필요한 것으로 나타났으며 이 과정을 통해서 높은 반응성은 물론 안정적인 지속성도 얻을 수 있었다. Pt-alumina aerogel 촉매의 가장 큰 특징은 높은 반응성은 물론, 일반적으로 반응전에 필수적으로 거쳐야하는 고온의 열처리가 전혀 필요 없다는 것으로서 이는 경제적으로 큰 이점을 가진다. 또한 alumina xerogel에 초기함침법으로 Pt를 담지시킨 촉매는 기계적 강도 및 반응성 면에서 우수한 성능을 보였으며 이를 통하여 alumina xerogel은 금속촉매의 지지체로서도 이용할 수 있다는 사실을 알 수 있었다.

• 한국결정성장학회지
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• 제4권4호
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• pp.347-355
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• 1994

솔-젤공정에 의하여 실리콘 웨이퍼 위에 형성한 $PbTiO_3$ 박막의 결정 구조 및 성분 분포에 미치는 열처리 효과를 고찰하기 위하여 $400^{\circ}C에서 750^{\circ}C$ 까지의 온도 범위에서 열처리를 수행하여 $440^{\circ}C$에서 열처리한 박막에서도 peroxskite 구조만을 갖는 박막이 형성됨을 새로이 발견하였다. $480^{\circ}C$에서 $550^{\circ}C$까지 열처리한 박막은 소량의 pyrochlore 구조가 함께 형성되 었으며 $600^{\circ}C$ 이상에서 열처리한 박막은 단지perovskite 구조만을 가졌으나 납의 승화가 급격 하게 증가하는 것이 관찰되었다.

• E2M - 전기 전자와 첨단 소재
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• 제9권3호
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• pp.251-258
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• 1996

Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

• 한국세라믹학회지
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• 제35권9호
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• pp.945-952
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• 1998

Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.