• Proceedings of the Korean Radioactive Waste Society Conference
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• 2016.05a
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• pp.231-232
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• 2016

• Clean Technology
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• v.12 no.1
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• pp.1-9
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• 2006

Aqueous cleaning agents which are considered to be environmental-friendly and promising alternative ones among various industrial cleaning agents were evaluated in this words. In order to formulate aqueous cleaning agents, primary alcohol ethoxylates with 3, 5 and 7 moles of ethylene oxides among nonionic surfactants were selected as main surfactants. And anionic surfactants and alcohols were chosen as their cosurfactants. Builders such as NaOH, KOH, $Na_2CO_3$ and $NaHCO_3$ were also evaluated as additives for improvement of cleaning efficiency of aqueous cleaning agents. The experimental results of cleaning ability tests show that introduction of anionic surfactant TLS as cosurfactant in alcohol ethoxylate-based aqueous solution gives the best cleaning efficiency for removing mixed soil of cutting oil and grease. NaOH and $Na_2CO_3$ are also shown to play an important role for improvement of cleaning efficiency in a aqueous cleaning agent.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.59-59
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• 2009

현재 CMP분야는 광역 평탄화 반도체 소자의 집적화 및 소형화가 진행됨에 따라서 CMP 공정의 중요성은 날로 성장하고 있다. 하지만 이러한 CMP공정은 불가피하게도 scratch, pit, CMP residue와 같은 defect들을 발생시키고 있으며, 점점 선폭이 작아짐에 따라, 이러한 defect들이 반도체 수율에 미치는 영향은 심각해지고 있다. Defect들 중에 특히 scratch는 반도체에 치명적인 circuit failure를 일으키게 된다. 또한 반도체 내구성과 신뢰성을 감소시키게 되고, 누전전류를 증가시키는 등 바람직하지 못한 현상들이 생기게 된다. 본 연구에서는 scratch 와 같은 deflect들을 효율적으로 검출, 분석하고, scratch를 감소시키는데 그 목적이 있다. 본 실험을 위해 8" TEOS wafer와 commercial oxide slurry 및 friction polisher (Poli-500, G&P tech., Korea)를 사용하여 CMP 공정을 진행하였으며, CMP 공정조건은 각각 80rpm/80rpm/1psi(Platen speed/Head speed/Pressure)에서 1분 동안 연마를 한 후 scratch 발생 경향을 살펴보았다. CMP 후 wafer위에 오염되어 있는 slurry residue들을 제거하기 위해 SC-1, HF 세정을 이용하여 최적화된 post-CMP 공정기술을 제안하였다. Scratch 검출 및 분석을 위해 wafer surface analyzer (Surfscan 6200, Tencor, USA)와 optical microscope (LV100D, Nicon, Japan)를 사용하였다. CMP 공정 변수들에 따른 scratch 발생정도를 비교하였으며, scratch 발생 요인들에 따른 scratch 형태 및 발생정도를 살펴보았다. 최적화된 post-CMP 세정 조건은 메가소닉과 함께 SC-1 세정을 실시하여 slurry residue들을 제거한 후, HF 세정을 실시하여 잔여 오염물들을 제거하고 검출이 용이하도록 scratch를 확장시킬 수 있도록 제안하였으며, 100%의 particle removal efficiency (PRE)를 얻을 수 있었다. 실제 CMP 공정후 post-CMP 세정 단계별 scratch 개수를 측정한 결과, SC-1 세정 후 약 220개의 scratch가 검출되었으며, 검출되지 않았던 scratch가 HF 세정 후 확장되어 드러남에 따라 약 500개의 scratch 가 검출되었다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.4
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• pp.295-302
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• 2002

PAHs (polycyclic aromatic hydrocarbons) deposited in soil are one of serious problems against sustainable land use. In this paper, chemical soil flushing in a packed sandy soil matrix using a natural surfactant, $\beta$-cyclodextrin (CD) was studied via a fluorescence spectroscopy and a dye labelling. The contaminants are lipophilic ring compounds- phenanthrene and naphthalene. Sand type and flushing intensity (rate and concentration) are chosen as important investigation variables. The removal efficiencies were proportional to flow rate, concentration, temperature of the flushing solution and voidity of the sand column. Initial sorption of the surfactant onto the soil matrix was found to be a key step while flow shear was more crucial in the latter steps. The residual portion of the surfactant, which was most likely to be due to the initial sorption, would not be so influential on this type of soil washing for long times. These results will be useful in future for pilot scale in situ washing and for establishing better soil washing strategy.

• Clean Technology
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• v.11 no.3
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• pp.129-139
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• 2005

Fluoride-type cleaning agents such as TFEA (2,2,2-trifluoroethanol) and HFE (hydrofluoroether) are noticed to be next generation cleaning agents alternative to CFCs since they do not destruct ozones in the stratosphere due to no containment of chloride in the molecule, have lower global warming potential compared to HFCs and HCFCs, and are thermally stable compounds. Thus, the physical properties and cleaning agents were measured and compared with those of CFC-113, 1,1,1-TCE and HCFC-141b which are ozone destruction substances. They were also compared and evaluated with those of IPA and methanol which are currently employing as alternative cleaning agents. And TFEA-based cleaning agents consisted of TFEA and alcohols or HFEs were formulated, their physical properties and cleaning abilities were measured and their utilization as alternative cleaning agents was evaluated. As a result, TFEA and HFEs have lower cleaning ability for their removal of various soils compared to chloride-type cleaning agents, but theyshow excellent cleaning ability for Fluoride-type soils. And it is observed that the formulated cleaning agents of TFEA and alcohols or HFEs caused to increase cleaning ability of flux and unsoluble cutting oil more than 100% compared to their individual component. Therefore, the fluoride-type cleaning agents are expected to be utilized for development of environmental-friendly non aqueous cleaning agents with excellent cleaning ability if they are formulated with proper solvents or additives.

• Clean Technology
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• v.12 no.4
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• pp.250-258
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• 2006

CFC compounds such as CFC-113 and 1,1,1-TCE, etc. have been used in various industries due to their excellent chemical stability, thermodynamic characteristics, non-inflammability and anti-corrosiveness. However, in oder to protect the earth environment, "the Montreal Protocol on substances that deplete the ozone layer" was adopted in 1989 for prevention of production and utilization of these CFC compounds and alternative cleaning agent have been required in the industry. The objective of this study is to develop non-aqueous cleaning agents that do not require major change of cleaning system, have excellent cleaning efficiency, are favorable to the environment, are harmless to the human body, and are not generated corrosive materials. In this work, non-aqueous cleaning agents have been formulated with glycol ether series and paraffinic hydrocarbon series with siloxane, and their physical properties and cleaning efficiencies were analyzed and compared with those of regulated materials. As a result of physical properties measurement of the formulated cleaning agents, it is expected that they may have good penetration ability into contaminated materials due to their properties with low density and low surface tension. Measurement of flash point and vapor pressure of the cleaning agents will be helpful for evaluation of their safety and working environment. The experimental results of cleaning flux, solder and grease by the formulated cleaning agents show that their cleaning abilities of soils were good and that there were no residues on the substance after cleaning. Therefore, alternative cleaning agents which have equivalent cleaning ability to regulating materials, good penetration ability and low hazard to human body, have been developed in this work.

• Clean Technology
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• v.15 no.2
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• pp.81-90
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• 2009

In this study various cleaning evaluation methods were tested and comparatively evaluated to help cleaning industry. In order to select alternative cleaning agents objectively and systematically, various cleaning evaluation methods such as gravimetric, optically simulated electron emission (OSEE), contact angle, and analytical instrument methods were employed for cleaning contaminants such as flux, solder and grease. The analytical instruments used in this work were Fourier transform infrared spectroscopy (FTIR), ultraviolet visible spectroscopy (UV-VIS) and high performance liquid chromatography (HPLC). The gravimetric method was able to measure cleaning efficiencies easily and simply, but it was not easy to analyze them precisely because of its limitation in the gravimetric measurement. However, the OSEE technique was able to measure quickly and precisely the clean ability of cleaning agents in comparison with the gravimetric method. The contact angle method was found to be necessary for taking special precaution in its application to the cleaning evaluation due to possible formation of tiny organic film on the substrate surface which might be generated from contaminants and cleaning agents. In case of precision analysis that cannot be done by gravimetric method, fine analytical instruments such as UV-VIS, FTIR and HPLC could be used in analyzing trace amount of flux, solder and grease quantitatively, which were extracted from the surface by special solvents.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.39-39
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• 2003

• Journal of the Korea Academia-Industrial cooperation Society
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• v.3 no.2
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• pp.74-79
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• 2002

In the a rapid changes of the semiconductor manufacturing technologies for early 21st century, it may be safely said that a kernel of terms is the size increase of Si wafer and the size decrease of semiconductor devices. As the size of Si wafers increases and semiconductor device is miniaturized, the units of cleaning processes increases. A present cleaning technology is based upon RCA cleaning which consumes vast chemicals and ultra pure water (UPW) and is the high temperature process. Therefore, this technology gives rise to the environmental issue. To resolve this matter, candidates of advanced cleaning processes has been studied. One of them is to apply the electrolyzed water. In this work, Compared with surface on Si wafer with electrolyzed water cleaning and various chemicals cleaning, and analyzed Si wafer surface condition treated with elecoolyzed water by cleaning temperature and cleaning time. Especially. concentrate upon the contact angle. finally, contact angle on surface treated with cathode water cleaning is 17.28, and anode water cleaning is 34.1.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.19-22
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• 2007

반도체 산업은 회로의 고밀도화, 고집적화에 따라 웨이퍼 표면의 입자, 금속, 금속 이온, 유기물 등 오염물의 크기가 미세해 지고 세정에 대한 요구 조건이 더욱 엄격해지고 있다. 현재 세정 공정은 반도체 제조공정 전체에서 약 30%를 차지하고 있으며, 습식 세정 방식이 주로 사용되고 있다.[1] 습식 세정방식은 탈이온수로 린스하고 건조하는 공정이 필연적으로 따르며, 기판 표면에 건조과정에서 물반점이 남는 문제가 가장 큰 이슈로 남아 있다. 본 연구는 웨이퍼의 습식 세정 공정에 사용되는 DHF Final Clean Process후 IPA Vapor를 이용한 건조 방법을 기술 하였다. Single wafer spin process를 이용하였으며, 웨이퍼 Process 공간을 밀폐 후 N2가스를 충진하여 대기중의 산소 오염원 유입을 차단하고 수세 및 건조 가스를 이용하여 건조시킴으로써 SiFx의 SiOx로의 치환을 방지 하여 건조 효율 향상을 목적으로 한다. Bare 웨이퍼에서 65nm 이상 오염 발생 증가량을 측정 하였으며, 공정 후 웨이퍼 오염 발생량을 35개 이하로 확보 하였다.