• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.158-158
• /
• 2010

최근 전자산업의 발전은 형상 면에서 경박 단소화로 급속하게 진행되고 있으며, 전자소자 내부에서의 배선재료로 사용되고 있는 알루미늄(Al) 박막의 두께 역시 얇아지고 있다. 극박막 범위에서 박막의 두께 증가에 따라 전기가 잘 흐르기 시작하는 박막의 최소두께로 정의 되는 유착두께를 실시간으로 측정하는 방법을 구현하고 임의의 금속박막과 기판의 조합에 있어서 각각의 재료에 대한 유착두께를 제공함으로써 향후 미세전자소자의 제작 시 배선 재료의 선택에 대한 기초자료를 축적할 수 있다. 또한 박막의 미세구조 변화 관점에서 연구함으로써 여러 가지 금속박막에 대한 유착두께를 줄일 수 있는 방법을 도출할 수 있다. 본 연구에서는 유리 기판 위에 사진 식각 공정으로 패턴을 형성하고 패턴이 형성된 유리 기판은 스퍼터에 연결된 4 point probe에 구리 도선으로 연결한 후 DC 마그네트론 스퍼터법으로 Al, Cr, ITO, Sn을 증착하면서 실시간으로 시간에 따른 면저항을 측정하며 이 때 스퍼터 내부 진공도는 $4.6{\times}10^{-5}$까지 낮춰준 후 각각의 금속에 맞는 진공도를 설정하였다. 20.0 sccm의 Ar가스를 넣고 100 W파워로 플라즈마를 형성시켜 금속을 증착하면서 4-point probe를 이용하여 실시간으로 면저항을 측정했다. 1초 단위로 면저항을 측정한 결과 평균적으로 Al은 71초, Cr은 151초, ITO는 61초, Sn은 20초에 저항이 급격히 감소함을 알 수 있었다. 또한 저항이 급격히 감소한 시점의 박막 두께를 알기 위해Surface profiler로 박막두께를 측정한 결과 1초당 Al은 $4\;{\AA}$, Cr은 $1.7\;{\AA}$, ITO는 $2.7\;{\AA}$, Sn은 $6.7\;{\AA}$ 이었다. 실험적으로 R은 면저항, T는 증착 시간이라 할 때 Y축을 $R{\times}T^3$으로 하고 X축을 T로 설정하고 그래프로 나타내면 Y축 값이 최소값을 갖는 시점이 유착두께임을 확인하였다. 본 연구는 실시간 면저항 측정을 통한 금속박막의 전기전도 특성과 미세구조에 대한 기초자료를 제공함으로써 신기술 발전에 공헌할 것이다.

• Journal of Sensor Science and Technology
• /
• v.8 no.3
• /
• pp.291-297
• /
• 1999

The plasma etching of tungsten thin films has been studied with $SF_6$ gas in RIE system. The etch rate of ${\alpha}$-phase W film with $SF_6$ gas plasma has been showed to depend strongly on process parameters ($SF_6$, $SF_6-N_2$ gas). Effect of $N_2$ addition and etching selectivity between W film and photoresist have also been studied in detail. Etching profiles between W film and photoresist were investigated by SEM. The compounds on W surface after $SF_6-N_2$ gas plasma treatment were examined by XPS and the concentration of F ions was detected by OES during plasma on.

• Journal of Internet Computing and Services
• /
• v.6 no.1
• /
• pp.105-114
• /
• 2005

This paper describes a new measuring technique by analysing multiple time-series patterns. This paper's goal is that extracts a really measured value having a sample pattern which is the best matched with an inputted time-series, and calculates a difference ratio with the value. Therefore, the proposed technique is not a recognition but a measurement. and not a hardware but a software. The proposed technique is consisted of three stages, initialization, learning and measurement. In the initialization stage, it decides weights of all parameters using importance given by an operator. In the learning stage, it classifies sample patterns using LBG and DTW algorithm, and then creates code sequences for all the patterns. In the measurement stage, it creates a code sequence for an inputted time-series pattern, finds samples having the same code sequence by hashing, and then selects the best matched sample. Finally it outputs the really measured value with the sample and the difference ratio. For the purpose of performance evaluation, we tested on multiple time-series patterns obtained from etching machine which is a semiconductor manufacturing.

• Journal of Sensor Science and Technology
• /
• v.1 no.2
• /
• pp.183-194
• /
• 1992

Some silicon micromechanical structures useful in sensors and actuators have been fabricated by electropolishing or porous silicon formation technique by anodic reaction in HF solution. The microstructures were lightly doped single crystal silicon and the formation was isotropic independent of crystal directions. Porous silicon layer(PSL) was formed selectively in $n^{+}$ region of $n^{+}/n$ silicon structure by anodic reaction in concentrated HF(20-48%) solution. Characteristics of the formed PSL were investigated along with change of the reaction voltage, HF concentration and the reaction time. PSL was formed only in $n^{+}$ region. The porosity of the PSL was decreased with the increase of HF concentration and independent of reaction voltage. For the case of $n/n^{+}/n$ structures, the etched surface of silicon was fairly smooth and a cusp was not found. The thickness of the microstructures was the same as that of the epitaxial n-Si layer and good uniformity. We have fabricated acceleration sensors by anodic reaction in HF solution(5 wt%) and planar technology. The process was compatible with conventional It fabrication technique. Various micromechanical structures, such as rotors of motor, gears and linear actuator, were also fabricated by the technique and examined by SEM photographs.

• Clean Technology
• /
• v.14 no.2
• /
• pp.123-128
• /
• 2008

The waste solution, which was discharged from the recovery process of LCD etching solution, consists of 15 wt% nitric acid and 20 wt% acetic acid. In this study, it was conducted to separate acid individually from the mixed acid by vacuum evaporation under -760 mmHg gauge and at $40^{\circ}C$. We have investigated evaporation behavior of acid as a function of temperature. There have been problems that tiny amount of nitric acid were evaporated simultaneously above $33^{\circ}C$. Thus, efforts were conducted to recover acetic acid by vacuum evaporation with adding $H_2O$, waste mixed acid and 20 g/L NaOH for a curb on evaporation of nitric acid. By adding $H_2O$, evaporation of nitric acid was reduced from 7% to 0.78%. However, it was reduced from 7% to 0.25% by adding mixed acid. In view of the results achieved so far, we may expect to separate the etching solution individually by controlling vacuum conditions.

• Korean Chemical Engineering Research
• /
• v.44 no.6
• /
• pp.588-596
• /
• 2006

The surface of polystyrene membrane treated by Ar, $O_2$ plasma, and the effects were observed before and after the treatment and permeability of $CO_2$, $N_2$ and selectivity of $CO_2$ relative to $N_2$ was measured using continuous flow gas permeation analyzer (GPA). The mole ratio of O over C in the surface was increased from 0 to 0.179 with Ar plasma treatment and route mean square of surface was increased from $15.86{\AA}$ to $71.64{\AA}$. Therefore the contact angle was decreased from $89.16^{\circ}$ to $18.1^{\circ}$. Thus Plasma treatments made surface of membrane tend to be highly hydrophilic. The optimum condition for the $CO_2$ permeability and ideal selectivity of the plasma treated membrane was as follows: the measurement of Ar (60 W, 2 min, $70^{\circ}C$) plasma treatment was $1.14{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$ and 4.22. In the case of $O_2$ plasma treatment, the contact angle was decreased at $13.56^{\circ}$ with increase of O/C ratio ($0.189{\AA}$) and route mean square of surface ($57.10{\AA}$). The optimum condition for the $CO_2$ permeability and ideal selectivity of the plasma treated membrane was as follows: the measurement of $O_2$ (90 W, 2 min, $70^{\circ}C$) plasma treatment was $7.1{\times}10^{-12}[m^3(STP){\cdot}m/m^2{\cdot}sec{\cdot}atm]$ and 11.5. After plasma treatment, the changes of membrane surface were all subtly linked with both cross-linking and etching effects. Finally, it was confirmed that the gas permeation capacity and selectivity of the modified membrane with plasma could be improved by an appropriate control of the plasma conditions such as treatment time, the power input and sort of plasma gas.

• Korean Journal of Materials Research
• /
• v.15 no.3
• /
• pp.161-165
• /
• 2005

We investigated selective dry etching of GaAs over AlGaAs and InGaP in high density planar inductively coupled $BCl_3/SF_6$ plasmas. The process parameters were ICP source power (0-500 W), RE chuck power (0-30W) and gas composition $(60-100\%\;BCl_3\;in\;BCl_3/SF_6)$. The process results were characterized in terms of etch rate, selectivities of GaAs over AlGaAs and InGaP, surface morphology, surface roughness and residues after etching. $BCl_3/SF_6$ selective etching of GaAs showed quite good results in this study. Selectivities of GaAs $(GaAs:AlGaAs\~36:1,\;GaAs:InGaP\~45:1)$ were superior at $18BCl_3/2SF_6$, 20 W RF chuck power, 300 W ICP source power and 7.5 mTorr. Addition of $(5-15\%)SF_6\;to\;BCl_3$ produced relatively high selectivities of GaAs over AlGaAs and InGaP during etching due to decrease of etch rates of AlGaAs and InGaP (boiling points of etch products: $AlF_3\~1300^{\circ}C,\;InF_3>1200^{\circ}C$ at atmosphere) at the condition. SEM and AFM data showed slightly sloped sidewall and somewhat rough surface$(RMS\~9nm)$. XPS study on the surface of processed GaAs proved a very clean surface after dry etching. It shows that planar inductively coupled $BCl_3/SF_6$ plasmas could be a good candidate for selective dry etching of GaAs over AlGaAs and InGaP.