• Title/Summary/Keyword: 상호교환결합세기

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Exchange Coupling in CoZr/Ag/CoCr Trilayered Films (CoZr/Ag/CoCr 삼층박막의 교환결합)

  • 백종성;박용성;임우영;이수형;김종오
    • Journal of the Korean Magnetics Society
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    • v.8 no.6
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    • pp.357-361
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    • 1998
  • For CoZr/Ag/CoCr trilayered films deposited by DC and FR magnetron sputtering method, ferromagentic resonance experiments have been used to investigate the dependence of the exchange coupling between CoZr and CoCr layers separated by Ag layer on the thickness of the Ag layer. The coupling strength K increases with increasing Ag thickness up to 10 $\AA$ with a maximum value of 748 Oe, but oscillates with increasing Ag thickness in the range from 20 to 100 $\AA$. The coupling strength is positive for all samples. Hence, it seems that the exchange coupling between CoZr and CoCr layers separated by Ag layer is ferromagnetic.

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CNDO / 2 MO Calculations for the Electronic Structure of Silicas and Zeolites Ⅰ. Adsorbed Carbon Monoxide (실리카 및 제올라이트의 전자구조에 대한 CNDO / 2 분자궤도론적 계산 Ⅰ. CO 흡착)

  • Jong Taik Kim;Doo Seon Park
    • Journal of the Korean Chemical Society
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    • v.31 no.1
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    • pp.14-24
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    • 1987
  • The CNDO/2 method has been used to calculate the electronic structure of the zeolites and silicas, and to investigate the interaction of CO molecules with the OH groups or the exchanged cation in the zeolites. The interaction energies of CO molecules with OH groups in silica were ca. 12kcal/mol, the bond distance, R(O-H${\cdots}$C) was 2.6${\AA}$. The strength of bond between CO molecules and various types of cations in the zeolites was in the following order: $H^+ < Na^+ < Li^+$, i.e., this increased with increasing electrostatic field of cations. The bond orders of CO molecules interacting with the OH groups or the cations increased but for the OH-OC type interaction. The theoretical decationization energies of exchanged cations in the zeolites decreased in the order: $H^+ > Li^+ > Na^+$. And these energies depended on the amount of charge density transfered from the skeleton to the cations in order to compensate its negative charge.

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Magnetic Sensitivity Depending on Width of IrMn Spin Valve Film Device (IrMn 스핀밸브 박막소자의 폭 크기에 의존하는 자장감응도)

  • Choi, Jong-Gu;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.20 no.2
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    • pp.41-44
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    • 2010
  • The Cu thickness dependence of magnetic sensitivity for the NiFe/Cu/NiFe/IrMn spin valve multilayer was investigated. The magnetic properties measured by minor MR curves for the Ta(5 nm)/NiFe(8 nm)/Cu(3.5 nm)/NiFe(4 nm)/IrMn(8 nm)/Ta(2.5 nm) multilayer is MR = 1.46 %, MS = 2.0 %/Oe, $H_c\;=\;2.6\;Oe$, and $H_{int}\;=\;0.1\;Oe$. The magnetic sensitivities of GMR-SV devices with ten different widths and a same length of $4.45\;{\mu}m$ by fabricated by photo lithography decreased from 0.3 %/Oe to 0.06%/Oe as from a width of $10\;{\mu}m$ to $1\;{\mu}m$.

The Second Annealing Effect on Giant Magnetoresistance Properties of PtMn Based Spin Valve (이차 열처리가 PtMn계 스핀밸브의 거대자기저항 특성에 미치는 영향)

  • 김광윤;김민정;김희중
    • Journal of the Korean Magnetics Society
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    • v.11 no.2
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    • pp.72-77
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    • 2001
  • Top spin valve films with PtMn antiferromagnetic layers were deposited using a multi-target dc magnetron sputtering in (100)Si substrates overcoated with 500 $\AA$ of Al$_2$O$_3$. Firstly, the post-deposition annealing was performed at 270$\^{C}$ in a unidirectional magnetic field of 3 kOe to induce the crystallographic transformation of the PtMn layer from a fcc (111) to a fct (111) structure. Secondly, the spin valve films were annealed without magnetic fields and magnetic properties were measured. In Si/A1$_2$O$_3$ (500$\AA$)/Ta(50$\AA$)NiFe(40$\AA$)/CoFe(17$\AA$)/Cu(28$\AA$)/CoFe (30$\AA$)PtMn(200$\AA$)Ta(50$\AA$) top spin valve samples, the MR ratio decreased slowly with increasing annealing temperature up to 325$\^{C}$. But above 325$\^{C}$, the MR ratio decreased rapidly to 1%, due to a collapse of the exchange coupling between a antiferromagnetic layer and a pinned layer with increasing annealing temperature. Also above 325$\^{C}$, the exchange biased field rapidly decreased and the interlayer coupling field rapidly increased with increasing annealing temperature. A change in the interlayer coupling field was resulted from the increase in interface roughness due to Mn-interdiffusion through the grain boundaries. We confirmed the temperature in changing magnetic properties agreed well with the blocking temperature of PtMn based spin valve structure.

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Soft Magnetic Property Depending on thickness of Free Layer in CoFe/Cu/CoFe/IrMn Spin Valve Film (CoFe/Cu/CoFe/IrMn 스핀밸브 박막의 자유층 두께 감소에 따른 연자성 자기저항 특성 연구)

  • Choi, Jong-Gu;Go, In-Suk;Gong, Yu-Mi;Kim, Min-Ho;Park, Young-Suk;Hwang, Do-Guwn;Lee, Sang-Suk
    • Journal of the Korean Magnetics Society
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    • v.19 no.2
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    • pp.52-56
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    • 2009
  • Interlayer coupling field, coercivity, magnetoresitance ratio, and magnetic sensitivity depending on the thickness of free CoFe layer for the CoFe/Cu/CoFe/IrMn multilayer are investigated. In case of CoFe layer of $30\;{\AA}$ thickness for the CoFe(t)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)/IrMn($80\;{\AA}$) multilayer with ferromagnet/non-magnet/ferromagnet structure induced by IrMn layer, the lowest coercivity and the highest magnetic sensitivity, which is contained soft magnetic property, are observed. On the other side, in case of CoFe layer of $90\;{\AA}$ thickness, there are the highest coercivity and the lowest magnetic sensitivity. The fabricated CoFe($30\;{\AA}$)/Cu($25\;{\AA}$)/CoFe($60\;{\AA}$)]/IrMn($80\;{\AA}$) spin valve device with $2{\times}8{\mu}m^2$ patterning size are measured by two probe method, which is selected the sensing current as the longitudinal direction and the easy axis as the transversal direction. The measuring magntoresistance ratio and magnetic sensitivity of GMR-SV device having the soft magnetic property are 3.0% and 0.3%/Oe, respectively.

Analysis of Magnetic Multi-layers by RBS and PIXE (후방산란법(RBS)/양성자 여기 X-선 방출법(PIXE)을 이용한 다층자성박막의 두께 및 조성 정량분석)

  • 송종한;김태곤;전기영;황정남;신윤하;김영만;장성호;김광윤
    • Journal of the Korean Magnetics Society
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    • v.11 no.6
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    • pp.272-277
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    • 2001
  • A spin valve structure of Ta/NiFe/CoFe/Cu/CoFe/Ru/CoFe/FeMn/Ta which has a synthetic antiferromagnet (CoFe/Ru/CoFe), was fabricated by using a magnetron sputtering system. The thickness and composition of magnetic free and pinned layers affect the magnetic properties such as exchange interaction strength of each layer and so on. Even though Rutherford Backscattering Spectrometry (RBS) has advantages of quantitative and non-destructive analysis, it is almost impossible to determine the thickness and composition of magnetic thin films using lBS because of its poor mass resolution for a higher atom number (Z>20). In this study, quantitative analysis of the element composition and thickness for the spin valve sample was performed by combining both Proton Induced X-ray Emission Spectrometry (PIXE), which is one of element specific analysis techniques, and grazing-exit RBS with a highly improved depth resolution and absolute quantitative analysis. For the quantitative analysis, standardization of PIXE was carried out with NiFe, CoFe, and FeMn layers, which are one of constituent layers of spin valve films. Through PIXE standardization and the aid of PHE experimental results of the spin valve sample, ire overlapped signal in a grazing-exit RBS spectrum were successfully resolved and the thickness of the Ru layer was determined with a resolution of ∼1 .

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Annealing Cycle Dependence of MR Properties for Free Layer in $Ni_{25}Mn_{75}-Spin$ Valve Films ($Ni_{25}Mn_{75}-Spin$ Valve 박막 자유층의 열처리 순환수에 따른 자기저항 특성)

  • 이낭이;이주현;이가영;김미양;이장로;이상석;황도근
    • Journal of the Korean Magnetics Society
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    • v.10 no.2
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    • pp.62-66
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    • 2000
  • Annealing cycle number and nonmagnetic layer thickness dependences of interlayer coupling field ( $H_{inf}$ ) and coercivity ( $H_{cf}$ ) of free magnetic layer on NiMn alloy-spin valve films (SVF) were investigated. The SVF is Glass (7059)/N $i_{81}$F $e_{l9}$(70 $\AA$)/Co(10 $\AA$)/Cu(t $\AA$)/Co(15 $\AA$)N $i_{81}$$Fe_{19}$(35 $\AA$)/N $i_{25}$M $n_{75}$(250 $\AA$)Ta(50 $\AA$) films, it were fabricated using the dc sputtering method at different pinning layer thickness and nonmagnetic spacer thickness (Cu thickness; 30 $\AA$, 35 $\AA$, 40 $\AA$) of NiMn alloy with 25 at.%. Ni In case that Cu thickness of SVF is 35 $\AA$ and peak exchange coupling field ( $H_{ex}$) was 620 Oe, while coercivity $H_{c}$ = 280 Oe and MR ratio showed 2.5%. As for $H_{inf}$ and $H_{cf}$ , every SVF increased up to the stabilized values with the increase of annealing cycle number 15, which were $H_{inf}$ of 120 Oe and $H_{cf}$ of 75 Oe. The increase of $H_{cf}$ with the annealing cycle number seems to be caused by the effective reduction of Cu layer thickness due to the increase of interfacial mixing of Cu layer and Co layer. In addition, the $H_{inf}$ and $H_{cf}$ dependences of free NiFe layer by the interfacial mixing effect were appeared the different aspects when Cu layer becomes more thinner and thicker than Cu layer thickness of 35 $\AA$, respectively.ively....

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