• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1082-1089
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• 1998

To obtain fine dispersion of Ag particles in $YBa_2$$Cu_3$$O_{7-y}$ (123) superconductors, 123 samples were made by pyrophoric synthetic method using malic acid and the subsequent solid- state reaction. As the pyrophoric synthetic powder was used as a precursor material, fine 123 powder of submicron size was produced in a short reaction time. The added $Ag_2$O was converted to metallic Ag during Pyrophoric reaction and it accelerated both the formation of 123 phase and the grain growth via the enhanced mass transfer. The Ag particles of the sample sintered using the pyrephoric synthetic powder were more finely dispersed in the 123 matrix, compared to those of the sample sintered using the mechanically mixed powder, attributing to the improvement of the superconducting properties.

• Journal of the Korean Ceramic Society
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• v.37 no.11
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• pp.1097-1104
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• 2000

MOD(Metal-Organic-Decomposition)법에 의해 $Y_2$O$_3$버퍼층에 Pt/TiO$_2$/SiO$_2$/Si 기판 위에 제조한 후, 그 표면 위에 졸-겔 방법으로 YMnO$_3$박막을 형성하였다. 기판의 종류와 수화조건 변화가 YMnO$_3$박막의 결정화 거동에 미치는 영향을 고찰하였으며, 또한 $Y_2$O$_3$버퍼층 유.무에 따른 Mn의 산화상태를 확인하고 이에 따른 유전특성 변화를 연구하였다. $Y_2$O$_3$버퍼층을 삽입하지 않고 직접 기판 위에 형성한 YMnO$_3$박막의 결정상은 기판의 종류 및 Rw 변화에 관계없이 orthorhombic 구조임이 확인되었다. 반면, $Y_2$O$_3$버퍼층 위에 형성된 YMnO$_3$박막의 경우에는 Rw($H_2O$/alkoxide mole ratio)가 0~6 범위 내에서 낮아질술고 hexagonal 결정상 성장에 유리하였으며, 또한 Pt(111)/TiO$_2$/SiO$_2$/Si 기판이 Ptd(200)/TiO$_2$/SiO$_2$/Si에 비하여 결정상 형성에 용이하였다. $Y_2$O$_3$버퍼층은 YMnO$_3$결정상 내에서 $Mn^{4+}$ 이온형성을 억제함으로써 누설전류밀도가 크게 감소되는 효과를 주었으며, 동시에 강유전 특성을 지닌 hexagonal 결정상 형성에 유리하게 작용하였다. 결론적으로, $Y_2$O$_3$는 Pt가 코팅된 Si 기판 위에 YMnO$_3$박막 제조시 그 강유전 특성을 향상시켜주는 우수한 버퍼층 재료임을 확인하였다.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.243-251
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• 1994

ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

• Korean Chemical Engineering Research
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• v.57 no.3
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• pp.408-412
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• 2019

In this study, nitrogen doped carbon felt was prepared by pyrolysis of urea at high temperature and applied as an electrode for vanadium redox flow cell. Urea is easier to handle than ammonia and forms $NH_2$ radicals at higher temperatures, creating a nitrogen functional group on the carbon surface and acting as an active site in the vanadium redox reaction. Therefore, the discharge capacity of activated carbon felt electrodes using urea was 14.9 Ah/L at a current density of $150mA/cm^2$, which is 23% and 187% higher than OGF and GF, respectively. These results show the possibility that activated carbon felt electrode using urea can be used as electrode material for redox flow battery.

• Applied Chemistry for Engineering
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• v.34 no.2
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• pp.180-185
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• 2023

To improve the efficiency of water electrolysis, it is essential to develop an oxygen evolution reaction (OER) electrocatalyst with high performance and long-term stability, accelerating the reaction rate of OER. In this study, a hollow metal-organic framework (MOF)-derived ruthenium-cobalt oxide catalyst was developed to synthesize an efficient OER electrocatalyst. As the synthesized catalyst increases the surface exposure of ruthenium, a low overpotential (386 mV) was observed at a current density of 10 mA/cm² with a low Tafel slope. It is expected to be able to replace noble metal catalysts by showing higher mass activity and stability than commercial RuO₂ catalysts.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.880-887
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• 1995

Melt spun YB $a_2$C $u_3$A $g_{15}$ and YbB $a_2$C $u_3$A $g_{x}$(x=5, 16 and 53) precursor alloy ribbons were oxidized at 263~322$^{\circ}C$, and heat-treated at 872~89$0^{\circ}C$ under 1.0atm oxygen pressure. In addition, about ten ribbons were stacked and coupled by pressing, and then followed the same heat treatment. YB $a_2$C $u_3$ $O_{7-{\delta}}$(1-2-3) or YbB $a_2$C $u_3$ $O_{7-{\delta}}$(1-2-3) phase was formed in both the ribbons and the multilayered specimens. The formed 1-2-3 phases were not texturized in all the ribbons, but slightly texturized in the multilayered specimens. $J_{c}$ was not achieved in all the ribbons at 77K and zero magnetic field. Among the multilayered specimens, YB $a_2$C $u_3$A $g_{15}$ and YbB $a_2$C $u_3$A $g_{16}$ showed $J_{c}$ of 260 and 180A/$\textrm{cm}^2$, respectively. YB $a_2$C $u_3$A $g_{15}$ and YbB $a_2$C $u_3$A $g_{16}$ are considered to be the appropriate compositions in producing textured superconducting oxides with improved $J_{c}$ by pressing. Onset critical temperature ( $T_{on}$ ) of the multilayered YB $a_2$C $u_3$A $g_{15}$ was 92K while those of YbB $a_2$C $u_3$A $g_{x}$(x=5 , 16 and 53) were 88~90K. , 16 and 53) were 88~90K.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.40 no.12
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• pp.1063-1069
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• 2012

In present paper, we used magnesium alloy having a lower density and higher electrical conductivity for bipolar plate to reduce the weight of PEM fuel cell. The silver was coated to prevent corrosion and form passivation film on the metal surface with sputtering. In acid proof evaluation for setting optimal coating conditions, the homogeneity of coating thickness was improved by coating with the thickness of 3 ${\mu}m$ which not indicated any micro cracks and the temperature $180^{\circ}C$. The performance test and evaluation based on the clamping pressure and channel depth to determine the configuration of bipolar plate for assembling single cell was implemented. And then we assembled single cell with this bipolar plate and implemented the performance test to ensure and compare the current-voltage performance followed as several factors such as coating or non-coating, the change of clamping pressure, the change of channel depth, etc. As these results, the maximum power density of single cell with the coated bipolar plate was 192 $mW/cm^2$ and it was confirmed that the power density per unit mass was better than existing metal bipolar plate.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.456-456
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• 2010

CMOS 소자가 서브마이크론($0.1\;{\mu}m$) 이하로 스케일다운 되면서 단채널 효과(short channel effect), 게이트 산화막(gate oxide)의 누설전류(leakage current)의 증가와 높은 직렬저항(series resistance) 등의 문제가 발생한다. CMOS 소자의 구동전류(drive current)를 높이고, 단채널 효과를 줄이기 위한 가장 효율적인 방법은 소스 및 드레인의 얕은 접합(shallow junction) 형성과 직렬 저항을 줄이는 것이다. 플라즈마 도핑 방법은 플라즈마 밀도 컨트롤, 주입 바이어스 전압 조절 등을 통해 저 에너지 이온주입법보다 기판 손상 및 표면 결함의 생성을 억제하면서 고농도로 얕은 접합을 형성할 수 있다. 그리고 얕은 접합을 형성하기 위해 주입된 불순물의 활성화와 확산을 위해 후속 열처리 공정은 높은 온도에서 짧은 시간 열처리하여 불순물 물질의 활성화를 높여주면서 열처리로 인한 접합 깊이를 얕게 해야 한다. 그러나 접합의 깊이가 줄어듦에 따라서 소스 및 드레인의 표면 저항(sheet resistance)과 접촉저항(contact resistance)이 급격하게 증가하는 문제점이 있다. 이러한 표면저항과 접촉저항을 줄이기 위한 방안으로 실리사이드 박막(silicide thin film)을 형성하는 방법이 사용되고 있다. 본 논문에서는 (100) p-type 웨이퍼 He(90 %) 가스로 희석된 $PH_3$(10 %) 가스를 사용하여 플라즈마 도핑을 실시하였다. 10 mTorr의 압력에서 200 W RF 파워를 인가하여 플라즈마를 생성하였고 도핑은 바이어스 전압 -1 kV에서 60 초 동안 실시하였다. 얕은 접합을 형성하기 위한 불순물의 활성화는 ArF(193 nm) excimer laser를 통해 $460\;mJ/cm^2$의 에니지로 열처리를 실시하였다. 그리고 낮은 접촉비저항과 표면저항을 얻기 위해 metal sputter를 통해 TiN/Ti를 $800/400\;{\AA}$ 증착하고 metal RTP를 사용하여 실리사이드 형성 온도를 $650{\sim}800^{\circ}C$까지 60 초 동안 열처리를 실시하여 $TiSi_2$ 박막을 형성하였다. 그리고 $TiSi_2$의 두께를 측정하기 위해 TEM(Transmission Electron Microscopy)을 측정하였다. 화학적 결합상태를 분석하기 위해 XPS(X-ray photoelectronic)와 XRD(X-ray diffraction)를 측정하였다. 접촉비저항, 접촉저항과 표면저항을 분석하기 위해 TLM(Transfer Length Method) 패턴을 제작하여 I-V 특성을 측정하였다. TEM 측정결과 $TiSi_2$의 두께는 약 $580{\AA}$ 정도이고 morphology는 안정적이고 실리사이드 집괴 현상은 발견되지 않았다. XPS와 XRD 분석결과 실리사이드 형성 온도가 $700^{\circ}C$에서 C54 형태의 $TiSi_2$ 박막이 형성되었고 가장 낮은 접촉비저항과 접촉저항 값을 가진다.

• Journal of the Korean Electrochemical Society
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• v.19 no.3
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• pp.101-106
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• 2016

In this study, we prepared an ionic liquid composite solid polymer electrolyte (PEO-LiTFSI-$Pyr_{14}TFSI$) with poly(ethylen oxide), lithium bis(trifluoromethanesulfonyl)imide, N-butyl-N-methylpyrrolidinium bis(trifluoromethanesulfonyl)imide by blending-cross linking process. Although the PEO-LiTFSI-$Pyr_{14}TFSI$ composite solid polymer electrolyte displayed a small peak at 4.4 V, it had high electrochemical oxidation stability up to 5.7 V. Ionic conductivity of the PEO-LiTFSI-$Pyr_{14}TFSI$ composite solid polymer electrolyte increased with increasing temperature from $10^{-6}S\;cm^{-1}$ at $30^{\circ}C$ to $10^{-4}S\;cm^{-1}$ at $70^{\circ}C$. To investigate the electrochemical properties, the PEO-LiTFSI-$Pyr_{14}TFSI$ composite solid polymer electrolyte assembled with $LiFePO_4$ cathode and Li-metal anode. At 0.1 C-rate, the cell delivered $40mAh\;g^{-1}$ for $30^{\circ}C$, $69.8mAh\;g^{-1}$ for $40^{\circ}C$ and $113mAh\;g^{-1}$ for $50^{\circ}C$, respectively. The PEO-LiTFSI-$Pyr_{14}TFSI$ solid polymer electrolyte exhibited good charge-discharge performance in Li/SPE/$LiFePO_4$ cells at $50^{\circ}C$.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.339-344
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• 2001

An all solid-state thin film supercapacitor (TFSC) with Co$_3$O$_4$/LiPON/Co$_3$O$_4$ structure was fabricated on Pt/Ti/Si substrate using Co$_3$O$_4$ thin film electrode. Each Co$_3$O$_4$ film was grown by reactive dc reactive magnetron sputtering with increasing $O_2$/[Ar+O$_2$] ratio. Amorphous LiPON electrolyte film was deposited on Co$_3$O$_4$/Pt/Ti/Si in pure nitrogen ambient by using reactive rf magnetron sputtering. The electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ multi-layer structures exhibits a behavior of a bulk-type supercapacitor, even though much lower capacity (from 5 to 25 mF/$\textrm{cm}^2$-$\mu\textrm{m}$) than that of the bulk one. It was found that the TFSC showed a fairly constant discharge capacity with a constant current of 50 $\mu\textrm{A}/\textrm{cm}^2$ at the cut-off voltage 0-2V during 400 cycles. It is shown that the electrochemical behavior of the Co$_3$O$_4$/LiPON/Co$_3$O$_4$ TFSC is dependent upon the sputtering gas ratio. The capacity dependency of electrode films on different gas ratios was explained by different structural, electrical, and surfacical properties.