• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.772-777
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• 2003

선박이 배출하는 안정수(ballast water)는 외부로부터 유해 생물들이 유입되어 전파해 오는 주요경로로써 해양환경의 매우 중요하고 위험한 일종의 하나이지만, 이에 대한 효과적인 처리방법은 아직까지도 개발되지 못하였다. 그러나 최근 강 전리방전을 이용하여 고 밀집 산소와 물분자를 고농도 수산자유기(OH: hydroxyl radical)로 전리, 활성입자를 발생시켜 신속히 확산시키면 넓은 범위에서 비교적 낮은 농도로 유해성 침입 생물을 잔류물 없이 저렴한 비용으로 살균제나 촉매제의 사용 없이 소멸시켜 처리하는 효과적인 새로운 녹색방법을 제안하였다. 또한, 수산기는 강 산화제로써(산화환원 전위는 2.80 eV), 적조생물을 신속, 효과적으로 사멸시켜 잔유물과 오염물 발생 없이 이상적으로 해양적조현상을 처리할 수 있는 활성물질이다. 고출력 강 전리장치를 활용하면 수산기 활성제의 발생 농도를 Sr104 이상으로 얻을 수 있으므로, 해양적조처리에 요구되는 문턱 값 농도(~l$\times$$10^{-6}$)를 충족시킬 수 있으며, 이 경우 적조생물 소멸처리시간은 불과 10 sec 내외이므로 선박 안정수 처리문제와 함께 적조발생의 난문제를 해양동력학적으로 동시에 해결할 수 있는 효과적인 기술이다. 실험결과로부터 시간당 1 k톤의 활성물질을 발생하는 수산기활성제 제조장치의 경우, 약 4$\times$$10^2$ $\textrm{km}^2$/h의 적조해면을 처리할 수 있으며, 그 비용은 약 US$l,000 정도에 상당하므로, 적조에 따른 경제손실과는 비교될 수 없는 저렴하고 효과적인 방법이다. 활성물질의 생성시간과 가공시간은 불과 수십 $\mu\textrm{s}$ 및 수 sec 에 불과하므로, 1 kton/h 용량의 수산기활성제 제조장치의 환산소비동력은 약 200 kW이고, 장치의 체적은 10~30 ㎥의 공간으로 충분하므로, 소형선박으로 상당면적의 적조피해를 효과적으로 해결할 수 있다.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.240-248
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• 2002

$Fe_xTi_{l-x}O_2$ films (x=0.07 and 0.16) were grown by oxygen-plasma-assisted molecular beam epitaxy on rutile $TiO_2$(110). The same growth conditions were applied for both films in order to determine surface characteristics of grown films as a function of Fe composition. The films were characterized by several surface analysis techniques. The oxidation states of Ti and Fe in $Fe_xTi_{l-x}O_2$ films were found to be +4 and a mixture of +2 and +3, respectively. More $Fe^{3+}$ species exist in higher Fe doped film of $Fe_{0.16}Ti_{0.84}O_2$. The morphology of $Fe_{0.07}Ti_{0.93}O_2$ film shows tall rectangular and cylinderical islands growth on flat substrate-like surface. On the other hand, $Fe_{0.16}Ti_{0.84}O_2$ film consists of round shaped small islands showing somewhat rougher surface compared to the surface of $Fe_{0.16}Ti_{0.84}O_2$ film.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.1
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• pp.33-39
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• 2010

The electrolytic reduction of a spent oxide fuel involves a liberation of the oxygen in a molten LiCl electrolyte, which results in a chemically aggressive environment that is too corrosive for typical structural materials. Accordingly, it is essential to choose the optimum material for the processing equipment that handles the high molten salt. In this study, hot corrosion studies were performed on bare as well as coated superalloy specimens after exposure to lithium molten salt at $675^{\circ}C$ for 216 h under an oxidizing atmosphere. The IN713LC superalloy specimens were sprayed with an aluminized NiCrAlY bond coat and then with an $Y_2O_3$ top coat. The bare superalloy reveals an obvious weight loss due to spalling of the scale by the rapid scale growth and thermal stress. The chemical and thermal stability of the top coat has been found to be beneficial for increasing to the corrosion resistance of the structural materials for handling high temperature lithium molten salts.

• Korean Journal of Materials Research
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• v.3 no.2
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• pp.111-120
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• 1993

Abstract In this study, the Mo-Hf-O ingots containing 0.31-1.14at % Hf and 0.08-1.00at % 0 were prepared by plasma arc melting. The change of microstructure depending on the condition of heat treatmen~ was analysed by optical microscophy, auger electron microscophy, and transmission electron microscophy. Molybdenum powder with the oxygen content of 830ppm was compacted, and then melted. The oxygen content of molybdenum ingots was detected to be 40 -130ppm. As the contents of Hf and 0 increased, the grain size of ingots decreased. When molybdenum igot containing l.14at % Hf and 1.00at % C was heat treated, p-molybdenum carbide in grains was transformed into ${\alpha}$-molybdenum carbide at 130$0^{\circ}C$. Between 140$0^{\circ}C$ and 150$0^{\circ}C$, the precipitation of hafnium carbide was due to the reaction of solute Hf and C, and the hafnium carbide was saturated at grain boundaries at 150$0^{\circ}C$. When the sample was heat treated from 150$0^{\circ}C$ to 170$0^{\circ}C$, Hafnium oxide more stable thermodynamically precipitated both at grain boundaries and in grains after hafnium carbide had been dissolved at grain boundaries.

• Journal of Industrial Convergence
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• v.20 no.12
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• pp.79-85
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• 2022

Recently, a smartphone manufactured on a flexible substrate has been released as an electronic device, and research on a stretchable electronic device is in progress. In this paper, a silicon-based stretchable material is made and used as a substrate to implement and evaluate an optical sensor device using oxide semiconductor. To this end, a substrate that stretches well at room temperature was made using a silicone-based solution rubber, and the elongation of 350% of the material was confirmed, and optical properties such as reflectivity, transmittance, and absorbance were measured. Next, since the surface of these materials is hydrophobic, oxygen-based plasma surface treatment was performed to clean the surface and change the surface to hydrophilicity. After depositing an AZO-based oxide film with vacuum equipment, an Ag electrode was formed using a cotton swab or a metal mast to complete the photosensor. The optoelectronic device analyzed the change in current according to the voltage when light was irradiated and when it was not, and the photocurrent caused by light was observed. In addition, the effect of the optical sensor according to the folding was additionally tested using a bending machine. In the future, we plan to intensively study folding (bending) and stretching optical devices by forming stretchable semiconductor materials and electrodes on stretchable substrates.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.4
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• pp.394-401
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• 2005

A nonthermal plasma-assisted fuel reformer was developed and the effects of operating variables on the performance of this reformer were studied. The $H_2$-rich reformed gas from the reformer was injected into a diesel engine under an idle condition and the effects of the amount of injected gas on the NO and soot reduction were investigated. It was found that with increasing electric power consumption, the degree of facility of ignition of the reforming reaction in the reformer could be enhanced. The performance of the reformer including $H_2$ concentration, $H_2$ recovery, and energy conversion was affected only by the O/C mole ratio. This was because the equilibrium reaction temperature was governed by the O/C mole ratio. With increasing O/C mole ratio, the $H_2$ recovery and energy conversion passed through the maximum values of 33.4% and 66%, respectively, at an O/C mole ratio between 1.2 and 1.5. The reason why the $H_2$ recovery and energy conversion increased with increasing O/C mole ratio when the O/C mole ratio was lower than $1.2{\sim}1.5$ appeared to be that the complete oxidation reaction occurred more enough with increasing O/C mole ratio in this low O/C mole ratio range and accordingly the reaction temperature increased. Whereas the reason why the $H_2$ recovery and energy conversion decreased with increasing O/C mole ratio when the O/C mole ratio was higher than $1.2{\sim}1.5$ appeared to be that the complete oxidation reaction was further advanced and the $H_2$ recovery and energy conversion decreased. As the weight ratio of reformed diesel to total diesel which entered the diesel engine was increased to $18.2{\sim}23.5%$, NO and soot reduction efficiencies increased and reached as values high as 68.5% and 23.5%, respectively.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.12-16
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• 2012

Although silver is used for T-OLED (Top emitting organic Light-Emitting Diode) as reflective anode, it is not an ideal material due to its low work function. Thus, we study the effect of annealing and atmospheric pressure plasma treatment on Ag film that increases its work function by forming the thin silver oxide layer on its surface. In this study, we deposited silver on glass substrate using RF sputtering. Then we treated the Ag samples annealing at $300^{\circ}C$ for 30 minutes in atmosphere or treating the atmospheric plasma treatment for 30, 60, 90, 120s, respectively. We measured the change of the mechanical properties and the potential value of surface with each one at a different treatment type and time. We used nano-indenter system and KPFM (Kelvin Probe Force Microscopy). KPFM method can be measured the change of surface potential. The nanoindenter results showed that the plasma treatment samples for 30s, 120s had very low elastic modulus, hardness and Weibull modulus. However, annealed sample and plasma treated samples for 60s and 90s had better mechanical properties. Therefore, plasma treatment increases the uniformity thin film and the surface potential that is very effective for the performace of T-OLED.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.193-193
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• 2000

박막 내의 잔류 응력은 막의 기계적 전기적 물성을 변화시키는 등 박막에 많은 영향을 끼치는 것으로 알려져 있다. 이러한 응력은 박막의 증착 공정중 여러 가지 증착 조건에 의해서 변화하게 되는데, 특히 스퍼터링 시스템의 경우에는 증착 압력과 사용하는 가스, 인가되는 전력 등 기본적인 증착조건들에 상당한 영향을 받는다. 이러한 영향은 금속 박막의 경우 상당히 잘 알려져 있다. 또한 반도체 공정에서 금속화 과정중 금속 전극의 단락등을 막기 위해 많은 연구가 진행되어 왔다. 본 논문에서는 고주파 마그네트론 스퍼터링 시스템을 사용하여 산화 아연(ZnO)을 증착하고 여러 공정 변수들에 따른 응력의 변화를 관찰하였다. 실험에서 ZnO 타겟을 사용하였으며, 작동 가스로는 아르곤과 산소를 사용하였다. 증착한 박막들은 모두 압축 응력을 보였으며, 박막의 응력에 가장 큰 영향을 미치는 요소들은 압력, 산소와 아르곤의 비, 기판과 타겟과의 거리 등이었는데, 인가 전력에는 거의 영향을 받지 않았다. 일반적으로 스퍼터링 시스템에서의 압축응력은 atomic peening에 의해서 형성되는데, 박막을 두드리는 높은 에너지의 아르곤이나 산소의 유량과 에너지의 1/2승에 비례하는 것으로 알려져 있다. 그러나 본 시스템에서는 인가 전력을 높여도 응력이 증가하지 않았고, 타겟과의 거리를 줄이면 오히려 응력이 감소함을 보였다. 이는 박막의 응력이 peening 하는 입자의 에너지뿐만이 아니라 증착되는 물질의 증착 속도와도 밀접한 관련이 있음을 보여준다. 즉, 증착속도가 증가하면 peening하는 입자가 끼치는 응력의 효과가 반감되기 때문으로 수식을 통해 증명할 수 있었다.진탄화 처리시간을 변화시켰을 때 화합물층의 생성은 ${\gamma}$'상으로부터 시작되고 $\varepsilon$상은 즉시 ${\gamma}$'상을 소모하면서 생성되어 일정시간이 지난 후 $\varepsilon$상은 안정화되며 질소가스농도가 증가할수록 화합물 층내의 $\varepsilon$상분율은 역시 증가하였다. 한편 CH4 가스농도는 처리되는 강종에 따라 차이를 보이며 적정 CH4 가스농도를 초과시에는 $\varepsilon$상 생성은 억제되고 시멘타이트상이 생성되었다.e에서 발생된 질소 플라즈마를 구성하는 이온들의 종류와 그 구성비율을 연구하였다.여러 가지 응용으로의 가능성을 가지고 있다. 그 예로 plasma processing, plasma wave에 의한 입자 가속, 그리고 가스 레이저 활성 매질 발생 등이 있다. 특히 plasma processing의 경우 helicon plasma는 높은 밀도, 비교적 낮은 자기장, remote operation 등이 가능하다는 점에서 현재 연구가 활발히 진행되고 있다. 상업용으로도 PMT와 Lucas Signatone Corp.에 서 helicon source가 제작되었다. 또한 높은 해리율을 이용하여 저유전 물질인 SiOF의 증착에서 적용되고 있다. 이 외에도 다수의 연구결과들이 발표되었다. 잘 일치하였다.ecursor 분자들이 큰 에너지를 가지고 기판에 유입되어 치밀한 박막이 형성되었기 때문으로 사료된다.을수 있었다.보았다.다.다양한 기능을 가진 신소재 제조에 있다. 또한 경제적인

• Journal of Environmental Science International
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• v.22 no.12
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• pp.1561-1569
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• 2013

This study carried out a laboratory scale plasma reactor about the characteristics of chemically oxidative species (${\cdot}OH$, $H_2O_2$ and $O_3$) produced in dielectric barrier discharge plasma. It was studied the influence of various parameters such as gas type, $1^{st}$ voltage, oxygen flow rate, electric conductivity and pH of solution for the generation of the oxidant. $H_2O_2$ and $O_3$.) $H_2O_2$ and $O_3$ was measured by direct assay using absorption spectrophotometry. OH radical was measured indirectly by measuring the degradation of the RNO (N-Dimethyl-4-nitrosoaniline, indicator of the generation of OH radical). The experimental results showed that the effect of influent gases on RNO degradation was ranked in the following order: oxygen > air >> argon. The optimum $1^{st}$ voltage for RNO degradation were 90 V. As the increased of $1^{st}$ voltage, generated $H_2O_2$ and $O_3$ concentration were increased. The intensity of the UV light emitted from oxygen-plasma discharge was lower than that of the sun light. The generated hydrogen peroxide concentration and ozone concentration was not high. Therefore it is suggested that the main mechanism of oxidation of the oxygen-plasma process is OH radical. The conductivity of the solution did not affected the generation of oxidative species. The higher pH, the lower $H_2O_2$ and $O_3$ generation were observed. However, RNO degradation was not varied with the change of the solution pH.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.92-97
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• 2016

The plasma has been used in various industrial fields of semiconductors, displays, transparent electrode and so on. Plasma diagnostics is critical to the uniform process and the product. We use the electron temperature of the various plasma parameters for the diagnosis of plasma. Generally, the range of the electron temperature which is used in a semiconductor process used the range of 1 eV to 10 eV. The difference of electron temperature of 0.5 eV has a influence in plasma process. The electron temperature can be measured by the electrical method and the optical method. Measurement of electron temperature for various gas flow rates was performed in DC-magnetron sputter and Inductively Coupled Plasma. The physical properties of the thin film were also determined by changing electron temperatures. The transmittance was measured using the integrating sphere, and wavelength range was measured at 300 ~ 1100 nm. We obtain the thin film of the mobility, resistivity and carrier concentration using the hall measurement system. As to the electron temperature increase, optical and electrical properties decrease. We determine it was influenced by the oxygen flow ratio and plasma.