• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.1
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• pp.7-13
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• 2013

Bio Clean Room(BCR) and pharmaceutical product manufacturing facilities require careful assessment of many factors, including HVAC, controls, room finishes, process equipment, room operations, and utilities. Flow of equipment, personnel, and product must also be considered along with system flexibility, redundancy, and maintenance shutdown strategies. It is important to involve designers, operators, commissioning staff, quality control, maintenance, constructors, validation personnel, and the production representative during the conceptual stage of design. Critical variables for room environment and types of controls vary greatly with the clean space's intended purpose. It is particularly important to determine critical parameters with quality assurance to set limits and safety factors for temperature, humidity, room pressure, and other control requirements. In this paper, oxygen cluster ion equipment was utilized in order to enhance the indoor air quality and to prevent the airborne infection of ward in hospital. Moreover, the performance test of the equipment was also performed in order to develop the optimal sterilization system of BCR using the equipment.

• Journal of the Korean Vacuum Society
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• v.13 no.1
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• pp.22-28
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• 2004

Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.

• Analytical Science and Technology
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• v.22 no.5
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• pp.415-421
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• 2009

A study was performed to investigate the isobaric effects of impurities in isotope measurement of gadolinium by TIMS. Especially, the ratio of $^{155}Gd/^{158}Gd$ showed the higher value than that of natural gadolinium and also decreased as the measuring time increased. This phenomenon is considered to be due to the oxide form of La ($LaO^+$, m/z=155) causing to create a serious bias on the measurement of $^{155}Gd$ abundance by La as an impurity, and due to $LaO^+$ produced more than the $Gd^+$ in the early time which disappears as the time goes on because of lower melting point and ionization potential of La than Gd. Although isobaric effects from Ba($BaO^+$), Ce($CeO^+$), Sm($SmO^+$), La($LaO^+$), and $K_4{^+}$(m/z=156)-cluster were detected even when blank rhenium filaments were used, these could be avoided by preconditioning(baking out) the filament. And we found that the measurement of $GdO^+$ instead of $Gd^+$ is more suitable in avoiding the isobaric effect from impurities such as La, Ce and Ba in the measurement of Gd isotope only in case of absence or extremely low level of Yb, Sm, Dy, Er, Lu.

• Korean Journal of Mineralogy and Petrology
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• v.35 no.4
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• pp.447-455
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• 2022

Fully dehydrated Tl₁₂-LTA (|Tl₁₂|[Si₁₂Al₁₂O₄₈]-LTA,Tl₁₂-A) was treated with 6.0×10³ Pa of ZrI₄ (g) at 623 K for 72 hr under anhydrous conditions. The crystal structure of product, |Zr_0.25I_1.5Tl₁₂|[Si₁₂Al₁₂O₄₈]-LTA, was determined by single-crystal crystallography using synchrotron X-radiation in the cubic space group Pm3m (a = 12.337(2) Å). It was refined using all data to the final error index (for the 712 unique reflections for which F_o> 4σ(F_o) R₁/wR₂= 0.055/0.189. In this structure, octahedral ZrI₆^2- ions center about 25% of the large cavities (Zr-I = 2.91(4) Å). Each coordinates to eight Tl⁺ ions and they are further bridged by Tl⁺ ions in the planes of 8-rings to form a cubic three-dimensional ZrI₆Tl₁₁⁹⁺ cationic cluster. About 1.5 Tl⁺ ions per unit cell moved to deeper side of sodalite cavity after reaction with ZrI₄(g). The remaining Tl⁺ ions occupy well-established cation positions near 6- and 8-rings.