• Applied Microscopy
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• v.36 no.3
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• pp.155-163
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• 2006

The defects in a synthesized crystal of ${\alpha}-Al_2O_3$ used as substrate for growing of semi-conductor materials such as GaN were examined by the conventional transmission electron microscopy (TEM), Large Angle CBED and High-Angle Annular Dark Field (HAADF) STEM methods. The dominant defects found in the specimen are basal microtwins with the thickness of ${\sim}2\;to\;32 nm$ and the associated strong strain field at the interface of microtwin/matrix, basal dislocations and complex dislocations in the one of {$2\bar{1}\bar{1}3$} pyramidal slip plane. All these basal and pyramidal dislocations seem to be strong related to basal microtwins. It was also found that the density of defects is very uneven. In the certain area with the dimension of a few fm, the dislocation density is quite high as an order of ${/sim}10^{10}/cm^2, but the average density is roughly estimated to be less than ${\sim}10^5/cm^2, as is usually expected in general synthesized crystals.

• Economic and Environmental Geology
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• v.36 no.4
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• pp.269-274
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• 2003

This study, one of the projects for investigation of the precious metal deposits of the Circum-Pacific Ocean coon-tries, was performed in a gem field of Pailling, Cambodia, in which there are numbers of undeveloped mineral resources. The gem fields in the Pailling area are typically distributed in the laterite, lying on of weathered basalts. The gem grade of corundum is low in the surface soil horizon(less than 1 m in depth), but is higher in the subsurface. Occurrence and genetic environment of the precious stone are not concerned in the soils. A Precious stone that is already made from at the least upper part of volcanic rocks is produced in large quantities to undergoing to weathering of the rocks. A precious stone is made from upper part of the formation under the high temperature when volcano is vomiting or after vomiting. and/or made from between the formation under the high temperature when other volcano is vomiting. Volcanic rocks including precious stone are a little different from other volcanic rocks when volcano is vomiting, but chemical composition of rocks is not far different from other volcanic rocks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.99-99
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• 2008

To grow the large diameter GaN with high structure and optical quality has been obtained by hydride vapor phase epitaxy(HVPE) method. In addition to the nitridation of $Al_2O_3$ substrate, we also developed a "step-growth process" to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch during cool down after growth. The as-grown 380um thickness and 75mm diameter GaN layer was separated from the sapphire substrate by laser-induced lift-off process at $600^{\circ}C$. A problem with the free-standing wafer is the typically large bowing of such a wafer, due to the built in the defect concentration near GaN-sapphire interface. A polished G-surface of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD), photoluminescence(PL) measurement, giving rise to the full-width at half maximum(FWHM) of the rocking curve of about 107 arcsec and dislocation density of $6.2\times10^6/cm^2$.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.5
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• pp.63-68
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• 2017

This study determines the selection of an appropriate jig material for the blade edge of the medical sapphire knife. The physical properties of the jig material affects the edge shape and chipping phenomenon in machining of the medical sapphire knife. If a grinding wheel is used, brittle workpieces such as sapphire are easily damaged by the propagation of cracks because the grinding force significantly increases. It is important to constantly maintain the grinding force in the grinding process of the brittle materials. The grinding force can be kept constantly by inducing the elastic deformation of the Jig material because the elastic deformation of brittle work-piece is negligibly low. The chipping phenomenon may be reduced by selecting the proper Jig material. Aluminum, copper, stainless steels and carbon steel were used as Jig materials. The experiment was conducted using a cast iron grinding wheel, which was installed on a conventional grinding machine with the ELID grinding system. The thickness and width of the chipping area were measured using an optical microscope and FE-SEM to analyze the shape of the blade edge. According to the experiment result, the chipping phenomenon decreased, and the sharp edge was formed when the jig materials with low elastic modulus were used.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.320-327
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• 1998

The chemical aspects of nitridated surface of sapphire(0001) have been studied by X-ray photoelectron spectroscopy. Nitridated layer was formed by remote plasma enhanced-ultrahigh vacuum deposition at a low temperature range. It was confirmed that this nitridated surface was mainly consists of AIN layer. The relative amounts of nitrogen reacted with AL on the sapphire surface and their surface morphology were investigated with X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) as a function of radio-frequency power, reaction temperature, and reaction time. The amounts of atomic nitrogen activated by plasma which was subsequently incorporated into sapphire were increased with RF power. But the amounts of nitrogen reacted with AI in sapphire was initially increased and then remained constant. However, the relative amounts of AIN were nearly constant with irrespective of nitridation temperature and time. Furthermore, a depth porfile of nitridated layer with XPS showed that the nitridated surface consisted of three layers with different stoichiometry.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.221-226
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• 2001

The basal slip (0001)1/3<1120 > dislocation velocity in sapphire ($\alpha$-$Al_2$$O_3$) single crystals was measured by four-point bending test. The bending experiment was carried out in the temperature range from 120$0^{\circ}C$ to $1400^{\circ}C$ at various engineering stresses 90MPa, 120MPa, and 150MPa. The velocity of such dislocations was estimated from the bending displacement rate of the four-point bend sample. The dependence of temperature and stress in dislocation velocity was investigated. The activation energy for dislocation velocity was determined to be about 2.2$\pm$0.4eV. In addition, the stress exponent (m) describing the stress dependence of dislocation velocities was in the range of 2.0$\pm$0.2.

• Korean Journal of Materials Research
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• v.11 no.3
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• pp.191-196
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• 2001

GaN is a key material for blue and ultraviolet optoelectronics. Postannealing process was employed to investigate the structural change and the effect on electrical property of the GaN thin film grown on reactive ion beam(RIB) treated sapphire (0001) substrate. Full width half maximum (FWHM) of double crystal x-ray diffraction (DCXRD) spectra and Hall mobility of the specimen were significantly changed depending on the postannealing time at $1000^{\circ}C$ in N2 atmosphere. FWHM of DCXRD reduced upto about 50arc-sec and the mobility increased about $80\textrm{cm}^2$/V.sec. The postannealed specimen with the best mobility was compared with sample without annealing by TEM. The former sample showed a decrease in the lattice strain and reduction of dislocation density by about 56~59%. This implies that there is a strong correlation between crystalline quality and the electrical property of the film. The Present results clearly show that the combination of RIB pretreatment and proper post annealing conditions results in the improved properties of GaN films grown by MOCVD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.151-151
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• 2007

최근에 에피 성장된 ZnO는 UV-LED, 화학적-바이오센서와 투명전도 전극에 많은 관심을 받고 있다. 고 품질의 ZnO는 Metal-organic chemical vapor deposition(MOCVD), Pulsed laser deposition(PLD), molecular beam epitaxy(MBE), 그리고 마그네트론 스퍼터링법에 의해 성장이 이루어지고 있다. 대부분의 ZnO는 사파이어, 싫리콘과 같은 이종 기판 위에 성장되고 있으며, Heteroepitaxy로 성장된 ZnO 박막은 기판과 박막사이의 격자상수, 열팽창계수 차이로 인해 높은 결함 밀도를 보이고 있다. 이러한 문제점은 광전자 소자 응용에 있어 여러 가지 문제점을 야기 시킨다. 이와 같은 문제점을 해결하기 위해 박막과 기판사이에 저온 버퍼층을 사용하거나 같은 물질의 버퍼층을 사용하여 결할 밀도를 감소시키고, 높은 결정성을 가진 ZnO 박막을 성장시킨 결과들이 많이 보고되어지고 있다. 본 연구에서는 마그네트론 스퍼터링 법으로 저온 버퍼층 성장 없이 성장온도 만을 달리 하여 고품질의 ZnO 박막을 성장시켰다. ZnO 박막은 c-sapphire 기판위에 ZnO(99.9999%)의 타겟을 사용하여 $600{\sim}800^{\circ}C$ 온도에서 성장시켰고, 스퍼터링 가스로는 아르곤과 산소를 2:1 비율로 혼합하여 15mtorr의 압력에서 성장하였다. 이렇게 성장시킨 ZnO 박막은 Transmission Electron Microscopy (TEM), High-Resolution X-ray Diffraction (HRXRD), Low-temperature PL, 그리고 Atomic Force Microscopy (AFM)로 특성을 분석 하였다. ZnO 박막은 HRXRD (002) 면의 $\omega$-rocking curve운석 결과, $0.083^{\circ}$의 작은 FEHM을 얻었고, (102) 면의 $\varphi$-sacn을 통해 온도가 증가함에 따라 향상된 6-fold을 확인함으로새 에피성장됨을 알 수 있었다. 또한 TEM분석을 통해 $800^{\circ}C$에서 성장된 박막은 $6.7{\times}10^9/cm^2$의 전위밀도를 얻을 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.387-387
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• 2007

기능성 나노소자를 구현할 수 있는 나노 소재로 0차원 구조의 양자점(quantum dot)과 1차원 구조의 양자선 및 나노선(nanorod)이 제안되고 있다. 나노선의 경우 나노스케일의 dimension, 앙자 제한 효과, 탁월한 결정성, self-assembly, internal stress등 기존의 벌크형 소재에서 발견할 수 없는 새로운 기능성이 나타나고 있어서 바이오, 에너지, 구조, 전자, 센서 등의 분야에서 활용되고 있다. 현재 국내외적으로 널리 연구되고 있는 나노선으로는 Si 및 Ge, $SnO_2$, SiC, ZnO 등이 있으며 특히, ZnO는 우수한 물리적 전기적 특성과 함께 나노선으로의 합성이 비교적 쉬워 주목받고 있는 재료이다. ZnO의 합성방법으로는 thermal CVD, MOCVD, PLD, wet-chemistry 등 다양한 방법이 사용되고 있다. 특히 MOCVD 법은 수직 정렬된 ZnO 나노막대를 합성하기가 매우 용이하다. 본 실험에서는 자체개발된 MOCVD 장비를 이용한 일차원 ZnO 나노선을 성장하였다. 이러한 ZnO 나노선의 성장은 사파이어 기판과 실리콘 기판 위에서 이루어졌으며 기판의 종류와 격자상수 불일도에 따른 상이한 성장과정을 온도에 따른 나노선 성장에서 관찰할 수 있었다. 사파이어 기판의 경우, 240도의 온도에서는 박막형상을 지닌 ZnO가 온도가 320도 이상으로 상승하면서 나노선으로 변함을 보였고, 실리콘 기판의 경우 380도 이상에서 기울기률 가진 나노선을 관찰하였으며, 420도에서는 나노선을 관찰 할 수 없었다. 또한 PL 장비를 이용한 PL 강도와 성장과정을 연관하여 생각하였을 때, 나노선의 기물기가 PL 강도비과 연관성을 가진다는 것을 측정을 통해 확인하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.171-171
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• 2010

GaN 기반 Light emitting diodes(LEDs)의 p-type doping layer는 일반적으로 hole을 발생시키는 acceptor로 Mg이 사용하되고 있다. 보통 Mg이 도핑된 p-type GaN은 >$1\;{\Omega}{\cdot}cm$의 저항이 존재하는데 그 이유는 Mg의 열적 이온화를 위한 activation 에너지가 높아서 상온에서 valence band의 hole concentration는 전체 억셉터 농도의 1%가 되지 않기 ��문이다. 본 논문에서는 높은 hole 농도를 얻기 위해서 metalorganic chemical-vapor deposition (MOCVD)를 장비를 사용하여 사파이어 기판의 misorientation-angle에 따른 p-type a-plane(11-20) GaN 특성을 분석하였다. misorientation-angle은 c축 방향으로 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 r-plane(1-102) 사파이어 기판 을 사용하였다. p-type 도핑물질로 bis-magnesium (Cp2Mg) 소스를 사용하였고 성장 과정중 발생하는 hydrogen passivation으로 인한 Mg-H complexes현상을 해결하기위해 conventional furnace annealing (CFA)와 rapid thermal annealing (RTA)를 이용하여 열처리 공정을 진행하였다. 열처리 공정은 Air와 N2 분위기에서 $650^{\circ}C$에서 $900^{\circ}C$ 사이의 다양한 온도에서 수행하였고 Hall 측정을 위해 Ni을 전극 물질로 사용하였다. 상온에서 Accent HL5500IU Hall system을 사용하여 hole concentration, mobility, specific resistance을 측정하였다. 열처리 공정 후 Hall측정 결과 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 각 샘플들은 온도, 시간, 분위기에 따라 hole concentration ($7.4{\times}10^{16}cm^{-3}{\sim}6{\times}10^{17}cm^{-3}$), mobility(${\mu}h=\;1.72\;cm^2/V-s\;{\sim}15.2\;cm^2/V-s$), specific resistance(4.971 ohm-cm ~8.924 ohm-cm) 가 변화됨을 확인 할 수 있었다. 또한 광학적 특성을 분석하기 위해 Photoluminescence (PL)을 측정하였다.