• Title/Summary/Keyword: 비탄성전자터널링 분광

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Elastic and inelastic electron tunneling characteristics in polyimide LB films (Polyimide LB막내의 탄성 및 비탄성 tunneling 전기전도특성)

  • ;;Mitsumasa Iwamoto
    • Electrical & Electronic Materials
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    • v.7 no.6
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    • pp.473-480
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    • 1994
  • The electron tunnel effect in polvimide LB films sandwiched between metal electrodes has been investigated in the present work by a study of both the elastic and inelastic tunneling components. By the results of elastic tunneling experiments in Au/Pl/Au tunneling junction, we can judge the height and thickness of tunnel barrier. The inelastic current in Inelastic Electron Tunneling Spectroscopy(IETS) is due to the interaction of the tunneling electron with the vibrational modes of the molecular species in the barrier. Measurements are done on Au/PI/Pb tunneling junctions. The spectra obtained are the second derivatives of the current-voltage characteristics of these junctions : specifically, d$^{2}$1/dV$^{2}$ as a function of voltage V. Because the energies measured by IETS can be directly compared to those measured by infrared and Raman spectroscopy, IR-RAS spectroscopy also measured for reference.

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