• Proceedings of the Korean Magnestics Society Conference
• /
• 2014.11a
• /
• pp.143-144
• /
• 2014

• 한국전자현미경학회:학술대회논문집
• /
• 1999.05a
• /
• pp.32-33
• /
• 1999

• Proceedings of the Korean Magnestics Society Conference
• /
• 1999.04a
• /
• pp.88-89
• /
• 1999

• Proceedings of the Korean Magnestics Society Conference
• /
• 1997.11a
• /
• pp.72-73
• /
• 1997

• Journal of the Korean Magnetics Society
• /
• v.16 no.3
• /
• pp.186-191
• /
• 2006

Ferromagnetic amorphous $Ni_{16}Fe_{62}Si_8B_{14}$ and $Co_{70.5}Fe_{4.5}Si_{15}B_{10}$ layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization ($Ms=800emu/cm^3,\;and\;560emu/cm^3$, respectively) compared to that of a $Co_{90}Fe_{10}(Ms=1400emu/cm^3)$. Because amorphous ferromagnetic materials have lower Ms than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field ($H_{sw}$) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high $V_h\;and\;V_{bd}$ compared with the values of the traditional CoFe-based MTJ.

• Journal of the Korean Magnetics Society
• /
• v.3 no.3
• /
• pp.190-195
• /
• 1993

새로운 Fe기 초미세 결정립합금의 제조 가능성 및 자기특성에 관하여 조사하였다. 고포화자화 (Fe.$_{85}$Co.$_{15}$ )$_{80}$B$_{20}$ 비정질합금에서 천이금속을 약 10 at.% Al으로 치환한 (Fe.$_{85}$ Co.$_{15}$ )$_{70}$B$_{20}$Al$_{10}$ 합금은 급속응고에 의하여 비정질 기지내에 직접 .alpha. -Fe(Co)의 석출이 가능하다. 또한 (Fe.$_{85}$Co.$_{15}$ )$_{70}$B$_{20}$Al$_{10}$합금에 2~6 at.% Nb의 첨가는 급속 응고시 결정립성장을 억제하고 포화자왜를 약 6ppm이하로 감소시켜 자기 특성을 개선시킨다. 열처리에 의한 자기 특성은 Nb의 치환량이 증가할 수록 감소한다. 400 .deg. C에서 1시간 열처리한 (Fe.$_{85}$Co.$_{15}$ )$_{70}$ B$_{18}$ Al$_{10}$Nb$_{2}$합금은 평균 약 8nm이하의 .alpha. -Fe(Co) 결정립으로 구성된 초미세 결정립합금 으로 제조가 가능하며, 포화자속밀도, 철손 및 투자율 (f=50 kHz, B$_{m}$ =0.2 T)이 각각 1.2 T, 12W/kg 및 2.5 *$10^{4}$으로 가장 우수하다. 이는 Fe-Si-B-Nb-Cu 초미세결정립합금 및 영자왜 Co기 비정질합금과 거의 같은 자기특성을 나타낸다.다..다.다..낸다.다..

• Journal of the Korean Magnetics Society
• /
• v.7 no.3
• /
• pp.134-139
• /
• 1997

Magneto-impedence (MI) were measured in amorphous $Co_{66}Fe_4NiB_{14} Si_{15}$ ribbons at 100 kHz as a function of the angle from ribbon axis. The samples were prepared using etching method, with the angle deviated from ribbon axis, 0$^{\circ}$, 30$^{\circ}$, 45$^{\circ}$, 60$^{\circ}$ and 90$^{\circ}$. The MI measured in 60$^{\circ}$ sample increased with the increasing magnetic fields. The dip in profile appears at H = 0 above the angle of 30$^{\circ}$. The maximum values of MI and their dips are increased with the cutting angle, but the maximum value of MI decreased at 90$^{\circ}$. The increase of MI with the angle was analyzed in terms of the transverse magnetic permeability.

• Journal of the Korean Magnetics Society
• /
• v.1 no.2
• /
• pp.37-41
• /
• 1991

Amorphous $Fe_{68.5}Co_5M_3Cu_1Si_{13.5}B_9(M=Nb, Mo, Mn, Cr)$ alloys were prepared by using rapidly quenching techinque and were annealed above their crystallization temperatures. Coercive force, initial permeability and AC power loss of the annealed $Fe_{68.5}Co_5M_3Cu_1Si_{13.5}B_9(M=Nb, Mo, Mn, Cr)$ alloys have been studied systematically. Nanocrystallines are formed in the annealed alloys which include Mo and Nb. Remarkably improved soft magnetic properties are obtained in the alloys whose average grain size is around 10 nm. However, soft magnetic properties of the alloys are degraded when grain size is less than IOnm or larger than 15nm. It is considered that the degradation of soft magnetic properties in the alloys whose average grain size is less than 10 nm is due to the Fe-rich amorphous phase retained at grain boundary during the initial crystallization process.

• Journal of the Korean Magnetics Society
• /
• v.17 no.3
• /
• pp.120-123
• /
• 2007

The typical double-barrier magnetic tunnel junction (DMTJ) structure examined in this paper consists of a Ta 45/Ru 9.5/IrMn 10/CoFe7/$AlO_x$/free layer/AlO/CoFe 7/IrMn 10/Ru 60 (nm). The free layer consists of an $Ni_{16}Fe_{62}Si_8B_{14}$ 7 nm, $Co_{90}Fe_{10}$ (fcc) 7 nm, or CoFe $t_1$/NiFeSiB $t_2$/CoFe $t_1$ layer in which the thicknesses $t_1$ and $t_2$ are varied. The DMTJ with an NiFeSiB-free layer had a tunneling magnetoresistance (TMR) of 28%, an area-resistance product (RA) of $86\;k{\Omega}{\mu}m^2$, a coercivity ($H_c$) of 11 Oe, and an interlayer coupling field ($H_i$) of 20 Oe. To improve the TMR ratio and RA, a DMTJ comprising an amorphous NiFeSiB layer that could partially substitute for the CoFe free layer was investigated. This hybrid DMTJ had a TMR of 30%, an RA of $68\;k{\Omega}{\mu}m^2$, and a of 11 Oe, but an increased of 37 Oe. We confirmed by atomic force microscopy and transmission electron microscopy that increased as the thickness of NiFeSiB decreased. When the amorphous NiFeSiB layer was thick, it was effective in retarding the columnar growth which usually induces a wavy interface. However, if the NiFeSiB layer was thin, the roughness was increased and became large because of the magnetostatic $N{\acute{e}}el$ coupling.

• Journal of the Korean Magnetics Society
• /
• v.15 no.6
• /
• pp.315-319
• /
• 2005

To obtain low switching field ($H_{SW}$) we introduced amorphous ferromagnetic $Co_{70.5}Fe_{4,5}Si_{15}B_{10}$ single and synthetic antiferromagnet (SAF) free layers in magnetic tunnel junctions (MTJs). The switching characteristics for MTJs with structures $Si/SiO_2/Ta$ 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/CoFeSiB 7 or CoFeSiB (t)/Ru 1.0/CoFeSiB (7-t)/Ru 60 (in nm) were investigated and compared to MTJs with $Co_{75}Fe_{25}$ and $Ni_{80}Fe_{20}$ free layers. CoFeSiB showed a lower saturation magnetization of $560 emu/cm^3$ and a higher anisotropy constant of $2800\;erg/cm^3$ than CoFe and NiFe, respectively. An exchange coupling energy ($J_{ex}$) of $-0.003erg/cm^2$ was observed by inserting a 1.0 nm Ru layer in between CoFeSiB layers. In the CoFeSiB single and SAF free layer MTJs, it was frond that the size dependence of the $H_{SW}$ originated from the lower $J_{ex}$ experimentally and by micromagnetic simulation based on the Landau-Lisfschitz-Gilbert equation. The CoFeSiB SAF structures showed lower $H_{SW}$ than that of NiFe, CoFe and CoFeSiB single structures. The CoFeSiB SAF structures were proved to be beneficial far the switching characteristics such as reducing the coercivity and increasing the sensitivity in micrometer to submicrometer-sized elements.