• Title/Summary/Keyword: 비정질 탄소 박막

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Characteristics of Diamond Like Carbon Film Fabricated by Plasma Enhanced Chemical Vapor Deposition Method with mixed Ar, N2 gas rate (혼합된 Ar, N2 가스 유량에 따른 PECVD 방법에 의하여 제작된 다이아몬드 상 탄소 박막의 특성)

  • Gang, Seong-Ho;Kim, Byeong-Jin;Bae, Gyeong-Tae;Ju, Seong-Hu
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.87-87
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    • 2018
  • 다이아몬드 상 탄소(diamond-like carbon, DLC)는 상당량의 $sp^3$ 결합을 가지는 비정질 탄소(a-C) 또는 수소화 비정질 탄소(a-C:H)로 이루어진 준안정 형태의 탄소이다. DLC는 전기 저항과 굴절률이 높고 화학적으로 다른 물질과 반응하지 않으며, 마찰계수가 낮고 경도가 높아 자기 디스크, 광학 소자 등의 다양한 분야에서 적용되고 있다[1,2]. 또한 다이아몬드에 비해 상온에서 성장이 가능할 정도로 합성온도가 낮아 적용 기판의 제한이 거의 없고, 증착 방법과 조건에 따라 탄소 결합의 다양성과 비정질성이 변화하기 때문에 넓은 범위의 특성을 얻을 수 있는 장점이 있다. 지금까지 DLC 박막의 광학적 특성, 특히 굴절률, 광학적인 에너지 밴드 갭, 자외선과 적외선 투과성에 대해서는 많은 연구가 진행되었으나 가시광선의 투과성에 대한 연구는 제한적이며[4], 가시광선 투과도 개선에 대한 연구는 전무하다. 본 연구에서는 ITO 기판 위에 DLC를 합성하고 기계적 특성과 가시광선 영역 투과도를 조사하였다. RF-PECVD(radio frequency plasma enhanced chemical vapor deposition) 방법에 의해서 $C_2H_2+Ar$ 혼합 가스 비율과 $C_2H_2+N_2$ 혼합 가스 비율을 변화시켜 ITO 기판 위에 DLC 박막을 합성하였다. 공정 압력과 rf-power, 증착시간, 기판온도는 0.2 torr, 40 W, 5 분, $50^{\circ}C$로 고정하고, 공정 가스는 $C_2H_2+Ar$$C_2H_2+N_2$가 200 sccm이 되도록 비율을 변화하였다. $C_2H_2:Ar$$C_2H_2:N_2$의 비율은 180 : 20, 160 : 40, 140 : 60, 120 : 80, 100 : 100이 되도록 가스의 유량을 조절하였다. 투과도는 가시광선(380 ~ 780 nm) 범위에서 측정하였고 두께와 표면조도는 AFM으로 측정하였다. 투과도는 $C_2H_2+Ar$의 Ar 가스 비율이 증가할수록 증가해 140 : 60일 때 최댓값을 나타낸 후 다시 감소하였다. $C_2H_2+N_2$ 투과도는 $N_2$ 가스 비율이 증가할수록 감소하는 경향을 나타내었다. 표면 거칠기는 $C_2H_2+Ar$ 혼합 가스를 사용한 경우의 Ar의 가스 비율이 증가할수록 증가하였다. 그러나 $C_2H_2+N_2$ 혼합 가스를 사용한 경우에는 $N_2$ 가스의 혼합 비율이 증가할수록 감소하였다.

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Measurement of hydrogen content in a-C:H films prepared by ECR-PECVD (ECR-PECVD 방법으로 증착된 a-C:H 박막의 수소함량 측정)

  • 손영호;정우철;정재인;김인수;배인호
    • Journal of the Korean Vacuum Society
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    • v.10 no.1
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    • pp.119-126
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    • 2001
  • Hydrogenated amorphous carbon (a-C:H) films were deposited by ECR-PECVD (electron cyclotron resonance-plasma enhanced chemical vapor deposition) method with deposition conditions such as ECR plasma source power, gas composition of methane and hydrogen, deposition time and substrate bias voltage. The hydrogen content in the films has been measured by ERDA (elastic recoil detection analysis) using 2.5 MeV $He^{++}$ ion beam. From the results of AES (Auger electron spectroscopy), RBS (Rutherford backscattering spectrometry) and ERDA, the composition elements of deposited film were confirmed the carbon atom and the hydrogen atom. It was observed by FTIR (Fourier transform infrared) that the hydrogen contents in the film varied according to the deposition conditions. In deposition condition of substrate bias voltage, the hydrogen contents were decreased remarkably because the amount of dehydrogenation in films was increased as the substrate bias voltage increased. In the rest deposition conditions, the hydrogen contents in the film were measured in the range 45~55%.

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Instability of Electric Characteristics in Hydrogenated Amorphous Carbon (수소화된 비정질 탄소박막에서 전기적 특성의 불안정성)

  • Kang, Sung Soo;Lee, Won Jin
    • Journal of Korean Ophthalmic Optics Society
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    • v.4 no.2
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    • pp.105-111
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    • 1999
  • This paper presents experimental results on the electrical properties of hydrogenated amorphous carbon films(a-C:H) prepared by PECVD. DC conductance of a-C:H was measured as a function of temperatures in the range of 100 to 423K. We studied two a-C:H films: one was well explained by the Mott's Variable Range Hopping(VRH) rule, but the other sample did not follow it. However, the conduction data of second sample were well fitted to Shimakawa's Multi-Phonon Hopping(MPH) model according to which conductivity is proportional to $T^M$ with m=15-17. but, in our samples, m was 10-12. Also a-C:H showed several bias effects like relaxation of conductance, bias-dependent conductance and the change of conductance slope in 1n(${\sigma}{\sqrt{T}}$) vs. $T^{1/4}$ plot. In this study we interpret these data by bias-dependent detrapping model.

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Electrical Characteristics Mechanism In a-C : H (수소화된 비정질 탄소 박막의 전기적 특성)

  • Jeong, Jin Woo;Kang, Sung Soo;Ruck, Do Jin;Lee, Won Jin;Shin, Jai Hyun
    • Journal of Korean Ophthalmic Optics Society
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    • v.2 no.1
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    • pp.103-110
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    • 1997
  • This work presents experimental results on the electrical properties of hydrogenated amorphous carbon films(a-C : H) prepared by PECVD. Conductance of a-C: H was measured as a function of temperatures in the range of 100 to 423K. We studied two a -C: H films: one was well explanied by the Mott's variable range hopping(VRH) rule. But the other sample did not follow it. The conduction data of second sample were well fitted to Shimakawa's multi-phonon hopping(MPH) model according to which conductivity is proportional to Tm with m= 15~17. But, in our samples, m was 10~12.

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A study on nano-scale friction of hydrogenated amorphous carbon for application in MEMS (MEMS 적용을 위한 비정질 상 탄소박막의 나노 스케일 마찰력 특성연구)

  • 고명균;박종완
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.1211-1214
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    • 2003
  • The film is prepared by electron cyclotron resonance chemical vapor deposition (ECRCVD) employing CH$_4$ and H$_2$ gases. It is deposited by the control of microwave plasma power, gas flow ratio, deposition pressure, and In-situ thermal treatment temperature. The structure of a-C:H (hydrogenated amorphous carbon) thin film is analysed by FT-IR spectroscopy. The fraction sp$^3$ versus sp$^2$ bonding is very important to clear up the surface and interrace of a-C:H film properties such as nano-scale friction behavior. The sp$^3$ versus sp$^2$ bonding of a-C:H thin film is dependent on the deposition conditions, therefore. nano-scale friction behavior is dependent on the deposition conditions.

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Atomic bonding structure in the a-C:H thin films prepared by ECR-PECVD (ECR-PECVD 방법으로 제조한 a-C:H 박막의 결합구조)

  • 손영호;정우철;정재인;박노길;김인수;배인호
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.382-388
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    • 2000
  • Hydrogenated amorphous carbon (a-C:H) films were fabricated by electron cyclotron resonance plasma-enhanced chemical vapor deposition. The bonding structure of carbon and hydrogen in the a-C:H films has been investigated by varying the deposition conditions such as ECR power, gas composition of methane and hydrogen, deposition time, and negative DC self bias voltage. The bonding characteristics of the a-C:H thin film were analyzed using FTIR spectroscopy. The IR absorption peaks of the film were observed in the range of $2800\sim3000 \textrm{cm}^{-1}$. The atomic bonding structure of a-C:H film consisted of $sp^3$ and $sp^2$ bonding, most of which is composed of $sp^3$ bonding. The structure of the a-C:H films changed from $CH_3$ bonding to $CH_2$ or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased.

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The Study on Characteristics of a-C:H Films Deposited by ECR Plasma (전자회전공명 플라즈마를 이용한 a-C:H 박막의 특성 연구)

  • 김인수;장익훈;손영호
    • Proceedings of the Korea Society for Industrial Systems Conference
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    • 2001.05a
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    • pp.224-231
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    • 2001
  • Hydrogenated amorphous carbon films were deposited by ERC-PECVD with deposition conditions, such as ECR power, gas composition of methane and hydrogen, deposition time, and substrate bias voltage. The characteristics of the film were analyzed using the AES, ERDA, FTIR. Raman spectroscopy and micro hardness tester. From the results of AES and ERDA, the elements in the deposited film were confirmed as carbon and hydrogen atoms. FTIR spectroscopy analysis shows that the atomic bonding structure of a-C:H film consisted of sp³and sp²bonding, most of which is composed of sp³bonding. The structure of the a-C:H films changed from CH₃bonding to CH₂or CH bonding as deposition time increased. We also found that the amount of dehydrogenation in a-C:H films was increased as the bias voltage increased. Raman scattering analysis shows that integrated intensity ratio (I/sub D//I/sub G/) of the D and G peak was increased as the substrate bias voltage increased, and films hardness was increased.

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Persistent Photoconductivity in Hydrogenated Amorphous Carbon Thin Films (수소화된 비정질 탄소 박막에서의 지속광전기전도도)

  • Kang, Sung Soo;Lee, Won Jin;Sung, Duck Yong
    • Journal of Korean Ophthalmic Optics Society
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    • v.1 no.2
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    • pp.49-55
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    • 1996
  • Hydrogenated amorphous carbon(a-C:H) films were fabricated by the low-frequency (60Hz) glow discharge of the mixture of methane and hydrogen, and their electrical properties were investigated. We observed that a-C:H films show the persistent photoconductivity(PPC) by illumination of heat-filtered while light for a few seconds. The PPC was about 10 times larger than the annealed dark conductivity. The samples clearly showed metastable characteristics. With increasing illumination times from 1 to 100 min, the annealing activation energy of the PPC was about 0.39eV. The annealing temperature at which the PPC disappeared increasing from $100^{\circ}C$ to $130^{\circ}C$. Illumination longer than 80 min leads to the formation of ${\pi}$ defects and to the decrease of PPC. From these results, we tentatively propose that the states in the ${\pi}$ band act as deep trap centers generating the metastabilities.

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