• Title/Summary/Keyword: 붕소

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Effects of Boron Application on the Forage Traits in the Pure and Mixed Swards of Orchardgrass and White Clover I. Changes in the growth, flowers, roots, and nodules of forages (Orchardgras 및 White clover의 단파 및 혼파 재배에서 붕소의 시용이 목초의 여러 특성에 미치는 효과 1. 목초의 생육, 개화, 뿌리 및 근류 등의 특성 변화)

  • 정연규
    • Journal of The Korean Society of Grassland and Forage Science
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    • v.23 no.2
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    • pp.81-90
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    • 2003
  • This pot experiment was conducted to find out the effects of boron application(B$_{0}$; 0.0, B$_1$; 0.2, $B_2$;2.0, $B_3$;6.0, $B_3$;6.0, $B_4$;15.0me B/pot) on the forage performance in the pure and mixed swards of orchardgrass and white clover. This 1st part was concerned with the changes in the growth, flowers and flower buds, and roots/nodules of forages. The results obtained are summarized as follows: 1. At the $B_3$ and $B_4$ treatments, the B toxicity was more seriously in white clover than in orchardgrass in the first half of cutting orders, and reduced in the latter half. In white clover, it was more worsened in a mixture than in a pure culture. It was somewhat reduced at the best growth stage of each forage. 2. In orchardgrass, the B toxicity($B_3$,$ B_4$) showed the chlorosis on leaf tips, shallow leaf, little tillers, and weak stems. Whereas it showed the chlorosis/necrosis on old leaf edge, little and weak stolons in white clover. 3. Comparing with the B deficiency($B_{0}$ , $B_1$) and toxicity($B_3$, $B_4$), the optimum B application($B_2$) influenced markedly good growth of shoot, root, nodule, and flower (flower number, blooming period, early full flower) in white clover. 4. Comparing with orchardgrass, white clover was greatly influenced by the boron application. However, this responses of white clover to boron were reduced in a grass-clover mixture with additional fertilization. It was recognized that the good forage performance in a grass-clover mixture could be regulated by the adequate applications of boron and additional fertilizers.s.

Interaction of Calcium, Potassium and Boron on the Growth of Leaf Lettuce and its Following Crop of Soybean (석탄(石灰), 가리(加里) 및 붕소시용(硼素施用)이 상치와 그 후작(後作) 대두생육(大豆生育)에 미치는 상호효과(相互效果))

  • Ha, Ho-Seong;Huh, Jong-Su
    • Korean Journal of Soil Science and Fertilizer
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    • v.14 no.3
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    • pp.137-145
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    • 1981
  • The mutual effects of calcium, potassium and boron on the growth of the leaf lettuce and its following crop of soybean in the granite soil were observed. The results obtained were as follows : 1. The yields of leaf lettuce and soybean were greatly increased by the application of calcium. It was observed that the calcium content in soybean leaf correlated positively with the yields, the number of pods and dry weight of soybean. 2. The application of calcium was effective by itself on the plant growth, the Ca+B application was better effective, and the best effective plot was $Ca+B_1+K_1$. 3. No significant tendency was observed between the Ca/B ratio in plant tissue and its growth. 4. The application of boron increased calcium absorption in plant tissue regardless of the application of calcium. 5. The number of pods and 100 grains weight of soybean were increased by the application of boron, And a positive correlation was observed between the boron content in soybean leaf and the number of pods of soybean. 6. One basal application of calcium, potassium and boron was effective both on leaf lettuce and on its following crop of soybean.

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The Diffusion of Boron from Borate Rod through Pinus densiflora and Pinus koraiensis (소나무와 잣나무에서 붕산염 막대로부터 붕소의 확산)

  • Oh, Choong-Sup;Kim, Jae-Jin;Kim, Gyu-Hyeok
    • Journal of Conservation Science
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    • v.7 no.2
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    • pp.60-67
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    • 1998
  • The effects of moisture content (MC) and diffusion period on the diffusion of boron from borate rod through Pinus densiflora and P. koraiensis were investigated as a preliminary research of integrated remedial treatment for heritage wooden structures using borate rod. After equilibrating MCs of samples (15, 25, and 40%), borate rod (1,000 mg) was inserted into the sample, and stored for diffusion of boron at room temperatures ($23^{\circ}C$) for 2, 4, 8, and 12 weeks. Wafers were serially cut at constant intervals from rod treatment point and the boron penetration through longitudinal and transverse direction was measured by staining with boron indicator. For boron diffusion, MC above fiber saturation point was needed, and the diffusion rates increased with time. The fastest rates of diffusion were observed in longitudinal direction, followed by the radial and then the tangential direction. The rates of diffusion in all directions were the fastest in P. koraiensis. In P. densiflora, the diffusion rates through heartwood was faster than that in sapwood in longitudinal direction and vice versa in transverse direction. Based on the best result of this study, optimal space between rod insertion points could be recommended as follows; approximately 120 mm for P. koraiensis and heartwood of P. densiflora, 60 mm for sapwood of P. densiflora in longitudinal direction, and approximately 30 mm for all species tested in transverse direction. However, the effect of rod size and long-term exposure for diffusion on boron movement should be fully investigated for the accurate evaluation of optimal space between rod holes.

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RRT Study for the Quantitative Analysis of Boron in Silicon (실리콘에 도핑된 붕소의 정량분석에 대한 공동분석연구)

  • 김경중;김현경;문대원;홍태은;정칠성;김이경;김재남;임철호;김정호
    • Journal of the Korean Vacuum Society
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    • v.11 no.4
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    • pp.218-224
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    • 2002
  • A domestic round robin test(RRT) for the quantitative analysis of minor impurities was performed by a standard procedure and standard reference material. The certified reference material(CRM)s for B-doped Si thin film and analysis specimens and the analysis specimens were prepared by an ion beam sputter deposition method. These samples were certified by inductively coupled plasma mass spectrometry(ICP-MS) with isotope dilution method which il one of the most quantitative methods in chemical analysis. By using an international standard procedure(ISO/DIS-l4237) for the quantitative analysis of B in Si by SIMS, a domestic RRT was performed for these specimens. Although only a few laboratories participated in this RRT, the average B concentration well agreed with the certified value within 2% error.

A Study on the Silicon Damages and Ultra-Low Energy Boron Ion Implantation using Classical Molecular Dynamics Simulation (고전 분자 동 역학 시뮬레이션을 이용한 실리콘 격자 손상과 극 저 에너지 붕소 이온 주입에 관한 연구)

  • 강정원;강유석;손명식;변기량;황호정
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.12
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    • pp.30-40
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    • 1998
  • We have calculated ultra-low energy silicon-self ion implantations and silicon damages through classical molecular dynamics simulation using empirical potentials. We tested whether the recently developed Environment-Dependent Interatomic Potential(EDIP) was suitable for ultra low energy ion implantation simulation, and found that point defects formation energies were in good agreement with other theoretical calculations, but the calculated vacancy migration energy was overestimated. Most of the damages that are produced by collision cascades are concentrated into amorphous-like pockets. Also, We upgraded MDRANGE code for silicon ion implantation process simulation. We simulated ultra-low energy boron ion implantation, 200eV, 500eV, and 1000eV respectively, and calculated boron profiles with silicon substrate temperature and tilt angle. We investigated that below 1000eV, channeling effect must be considered.

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Fabrication of Graphene FETs Using BN Dielectrics

  • Jeong, Dae-Seong;Jeong, U-Seong;Kim, Yu-Seok;Go, Yong-Hun;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.271.2-271.2
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    • 2013
  • 열화학 기상 증착법은 반도체 산업에서 대면적으로 소자를 양산할 수 있는 방법 중의 하나로서, 그래핀, 이황화 몰리브덴과 같은 이차원 물질의 합성법으로 널리 이용되고 있다. 이런 이차원 물질은 층수에 따라 그 물성이 변화하므로, 층수 조절이 가능한 합성법의 필요성이 대두되고 있다. 열화학 기상 증착법으로 이차원 물질을 합성할 경우, 주요 변수로 성장 온도와 촉매 금속이 있으며 이를 적절히 조절함으로서 합성되는 그래핀의 결정성과 층수의 조절이 가능하다[1-3]. 또한, 이차원 반도체 물질로 전계효과 트랜지스터를 제작하는 경우, 얇은 두께로 인하여 표면의 환경에 민감하게 되므로 게이트 절연체가 중요한 문제로 대두되고 있으며, 이런 현상을 해결하고자 질화붕소(BN)과 같은 이차원 절연물질에 관심이 집중되고 있다. 본 연구에서는 이차원 절연체인 질화붕소의 표면 위에 그래핀을 합성하고자 하였다. 반데발스 성장법(van der Waals epitaxy growth method)으로 1. "BN/ SiO2" 2. "BN/ Ni" 3. "BN/ Cu"의 세 가지 기판을 이용하여 그래핀을 합성하였다. 합성된 그래핀의 결정성 및 층수를 확인하기 위해 라만 스펙트럼과 투과전사 현미경을 통하여 분석하였다. 또한, 이 방법으로 "그래핀/ 질화붕소/ 그래핀"과 같은 구조의 소자를 제작하여 전계효과 트랜지스터 특성을 살펴보았다.

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Pressure Drop and Catalytic Dehydrogenation of NaBH4 Solution Across Pin Fin Structures in a Microchannel Reactor (마이크로 Pin Fin 화학반응기에서 수소화붕소나트륨 수용액의 압력강하 및 탈수소 화학반응 연구)

  • Jung, Ki Moon;Choi, Seok Hyun;Lee, Hee Joon
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.41 no.6
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    • pp.381-387
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    • 2017
  • Dehydrogenation from the hydrolysis of a sodium borohydride ($NaBH_4$) solution has been of interest owing to its high theoretical hydrogen storage capacity (10.8 wt.%) and potentially safe operation. An experimental study has been performed on the catalytic reaction rate and pressure drop of a $NaBH_4$ solution over both a single microchannel with a hydraulic diameter of $300{\mu}m$ and a staggered array of micro pin fins in the microchannel with hydraulic diameter of $50{\mu}m$. The catalytic reaction rates and pressure drops were obtained under Reynolds numbers from 1 to 60 and solution concentrations from 5 to 20 wt.%. Moreover, reacting flows were visualized using a high-speed camera with a macro zoom lens. As a result, both the amount of hydrogenation and pressure drop are 2.45 times and 1.5 times larger in a pin fin microchannel array than in a single microchannel, respectively.

Mechanical properties of $B_4C$ ceramics fabricated by a spark plasma sintering process (방전플라즈마 소결법을 이용한 고밀도 탄화 붕소 제조 및 기계적 특성)

  • Kim, Kyoung-Hun;Chae, Jae-Hong;Park, Joo-Seok;Kim, Dae-Keun;Shim, Kwang-Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.3
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    • pp.128-132
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    • 2007
  • [ $B_4C$ ] ceramics were fabricated by spark plasma sintering process and their sintering behavior, microstructure and mechanical properties were evaluated. Relative density of $B_4C$ ceramics were obtained by spark plasma sintering method reached as high as 99% at lower temperature than conventional sintering method, in addition, without any sintering additives. The mechanical properties of $B_4C$ ceramics was improved by a methanol washing process which can be removed $B_2O_3$ phase from a $B_4C$ powder surface. This improvement results ken the formation of homogeneous microstructure because the grain coarsening was suppressed by the elimination of $B_2O_3$ phase. Particularly, fracture toughness of the sintered specimen using a methanol washed powder improved over 30% compared with the specimen using an as-received commercial powder.

Separation Reaction Characteristics of Boron Ion by Ion Exchange Method (이온교환법을 이용한 해수 중 붕소이온 분리 반응 특성)

  • Jung Boo-Young;Kang Suk-Hwan;Lee Jae-Chun;Hwang Taek-Sung
    • Polymer(Korea)
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    • v.30 no.1
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    • pp.45-49
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    • 2006
  • In this study, it was investigated on the boron separation ken synthetically prepared seawater. ion exchange resin used in the experiments was Amberlite IRA 743, containing glucamine functional group. The experiments were carried out as a function of the conditions of the pH, boron initial concentration and temperature of seawater in a batch reactor. As a result, optimum conditions for boron adsorption were at pH 8.5 and 313 K, respectively. The adsorption rate was increased very fast with increasing the temperature, but decreased with increasing the initial concentration of boron. Also, the kinetics for boron adsorption applied the pseudo-second order model, as follows: $$\frac{X}{1-X}=780[C_0]^{-1.65}t^{1.48}\;exp\;({-\frac{17883}{RT}}\)\;;\;pH8.5$$

Quasi-Plasticity of $Si_3N_4$-BN Composites (질화규소-질화붕소 복합재료의 준소성 특성)

  • Lee, Gi-Seong;Lee, Seung-Geon;Kim-kim, Do-Gyeong
    • Korean Journal of Materials Research
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    • v.8 no.3
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    • pp.200-205
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    • 1998
  • The nature, degree, and evolution of contact damage from Hertzian contacts in silicon nitride-boron nitride composites($Si_3N_4-BN$) are investigated as a function of boron nitride content. The strong deviations of indentation stress-strain from elastic response indicate exceptional plasticity in $Si_3N_4-BN$. The absence of ring cracks or cone cracks on the surfaces is observed, indicating a high damage tolerance. Subsurface quasi- plastic deformation by shear stress is considerable and microdamage is widely distributed within the region below the contact. Shear faults associated with local microfailures play a precursor role in plasticity of this material. When boron nitride content increases, $Si_3N_4-BN$ becomes softer and more quasi-plastic.

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