• New Physics: Sae Mulli
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• v.68 no.12
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• pp.1281-1287
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• 2018

In this study, $Al_xGa_{1-x}N$ films were grown on (0001) sapphire substrates by using metal-organic chemical vapor deposition (MOCVD). The crystallinity of the grown films was examined with X-ray diffraction (XRD) patterns. The surfaces and the chemical properties of the $Al_xGa_{1-x}N$ films were investigated using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The optical properties of the $Al_xGa_{1-x}N$ film were studied in a wide photon energy range between 2.0 ~ 8.7 eV by using spectroscopic ellipsometry (SE) at room temperature. The data obtained by using SE were analyzed to find the critical points of the pseudodielectric function spectra, $<{\varepsilon}(E)>=<{\varepsilon}_1(E)>+i<{\varepsilon}_2(E)>$. In addition, the second derivative spectra, $d^2<{\varepsilon}(E)>/dE^2$, of the pseudodielectric function for the $Al_xGa_{1-x}N$ films were numerically calculated to determine the critical points (CPs), such as the $E_0$, $E_1$, and $E_2$ structure. For the four samples (x = 0.18, 0.21, 0.25, 0.29) between a composition of x = 0.18 and x = 0.29, changes in the critical points (blue-shifts) with increasing Al composition at 300 K for the $Al_xGa_{1-x}N$ film were observed via ellipsometric measurements for the first time.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.259-265
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• 1995

Antireflection coatings on optical lenses commertially available in domestic market are optically analyzed. Transmission spectra and reflection spectra are collected using spectrophotometers. The apparent absorption spectra around the absorption band edge are dominated by the substrate absorption. The reflection spectra and the apparent absorption spectra at visible region between 400nm and 700nm show very strong correlation to each other except a couple samples. The discrepency observed in the latters are due to an increased absorption in visible region by the substrate, which is negative effect of these samples. An antireflection coating consisted of $SiO_2/TiO_2/SiO_2/ZrO_2/Cr$ is made on c-Si substrate for spectroscopic ellispometry analysis. A film-by-film coating is accomplished and between each film deposition, ex-situ spectroscopic ellipsometry measurements are made. The analysis of the spectroscopic ellipsometry data reveals that the average film densities of $ZrO_2$ and $TiO_2$ reach only 80% of their respective packing densities and thick films are inhomogeneous along film growth direction. Discussions are made toward in-situ, real-time monitoring of the film growth so that a real-time feedback is possible to achieve a post-correction to minor deviations occured in the previous step. step.

• Bulletin of the Korean Space Science Society
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• 2011.04a
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• pp.21.1-21.1
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• 2011

우리는 분리형 쌍성 11개(원궤도 7개, 타원궤도 4개), 반분리형 쌍성 7개와 접촉형 쌍성 9개(근첩촉형 3개, 접촉형 2개, 초과 접촉형 4개)를 포함하는 27개의 다양한 종류의 표준식쌍성의 분석하여 절대량을 구하였다. 표준 식쌍성은 식쌍성의 광도곡선이 적어도 두 파장 영역 이상에서 그리고 모든 위상에서 골고루 관측되었고, 쌍성의 두 구성원 별에 대하여 시선속도 곡선이 발표된 식쌍성, 즉, 이중분광선 식쌍성 (Double line spectroscopic eclipsing binariy)으로 정의한다. 우리는 표준식쌍성의 370개의 후보에 대하여 문헌을 조사하여 관측 데이터를 확보 하였다. 이중에서 시선속도곡선과 광도곡선 자료가 동시에 존재하는 식쌍성은 80개이다. 이번 연구에서 우리는 표준식쌍성의 관측 질을 고려하여 27개의 식쌍성을 선택하여 절대량을 계산하였고, 이전 연구자들이 발표한 절대량과 비교 하였다. 이 논문에서 제시한 표준식쌍성의 유용성을 확인하기 위해 소마젤란은하에서 발견한 식쌍성의 광도곡선을 분석하여 측광학적인 해를 구하는 작업을 수행하였다. 이를 위하여 표준 식쌍성을 식쌍성의 종류별로 구분하고, 소마젤란은하에서 발견된 식쌍성 20여개를 선정하였다. 선정된 식쌍성을 표준식쌍성의 광도곡선과 형태를 비교하여 초기값을 결정하였고, 반복적인 차등보정법으로 측광학적인 해를 구하였다. 이 논문에서 제시한 표준식쌍성이 소마젤란은하에서 발견된 식쌍성들의 광도곡선의 형태를 대부분 포함하는 다양한 분포로 형성되어 있고, 이에 따른 측광학적인 해가 관측과 잘 일치함을 보여주고 있다.

• Korean Journal of Optics and Photonics
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• v.15 no.3
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• pp.258-262
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• 2004

The uncertainty of the detector-based candela scale is limited by the area measurement uncertainty of radiometric apertures. The apertures were fabricated with a diamond-turning machine which trimmed the edge of the apertures as sharply as a knife edge. The positions of the apertures were controlled by a digital feedback algorithm to scan the laser spot with the beam waist less than 5 ${\mu}{\textrm}{m}$. The knife edge scan yielded a set of coordinates on the edges of the aperture. The areas of the apertures were obtained by fitting the coordinates to the ellipses. The relative standard uncertainty of the measurement was estimated to be 8${\times}$10$^{-5}$.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.23-32
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• 2003

The spectroe-ellipsometric constant $\Delta$, Ψ and the ellipsometric growth curves at the wavelength of 632.8 nm are collected. These are critically examined to find out the optimum growth condition of phase change $Ge_2Sb_2Te_5(GST)$ thin films as an optical recording medium. GST films are prepared using DC magnetron sputtering technique, under the selected experimental conditions of Ar gas pressure (5 mTorr, 7 mTorr and 10 mTorr), DC power of sputtering gun (15 W, 30 W and 45 W), and substrate temperature (from room temperature to 18$0^{\circ}C$). Based on the three film model, the density distribution of deposited GST films are obtained versus Ar gas pressure and DC power by analyzing spectro-ellipsometric data. The calculated evolution curves at the wavelength of 632.8 nm, are fit into the in situ observed ones to get information about the evolution of density distribution during film growth. The density distribution showed different evolution curves depending on deposition conditions. The GST films fabricated at DC power of 30 W or 45 W, and at Ar gas pressure of 7 mTorr turned out to be the most homogeneous one out of those prepared at room temperature, even though the maximum density difference between the dense region and the dilute region of the GST film was still significant (~50%). Finally, in order to find the optimum growth condition of homogeneous GST thin films, the substrate temperature is varied while Ar gas pressure is fixed at 7 mTorr and DC power at 30 W and 45 W respectively. A monotonic decrease of void fraction except for a slight increase at 18$0^{\circ}C$ is observed as the substrate temperature increases. Decrease of void fraction indicates an increase of film density and hence an improvement of film homogeneity. The optimum condition of the most homogeneous GST film growth turned out to be 7 mTorr of Ar gas pressure, 15$0^{\circ}C$ of substrate temperature. and 45 W of DC power. The microscopic images obtained using scanning electron microscope, of the samples prepared at the optimum growth condition, confirmed this conclusion. It is believed that the fabrication of homogeneous GST films will be quite beneficial to provide a reliable optical recording medium compatible with repeated write/erase cycles.

• Journal of the Korean Vacuum Society
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• v.18 no.1
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• pp.60-65
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• 2009

We performed a study on optical properties of $BaSm_2Ti_4O_{12}$ thin films by vacuum ultra violet spectroscopic ellipsometry in the $0.92{\sim}8.6\;eV$ energy range. For the analysis of the measured ellipsometric spectra, a 5-layer model was applied where optical property of the $BaSm_2Ti_4O_{12}$ layer was well represented by a Tauc-Lorentz dispersion function. Our analysis clearly showed new structure in high energy region at about 7.5 eV Consistent changes of refractive index & extinction coefficient of the $BaSm_2Ti_4O_{12}$ thin film by the growth and annealing temperatures were also confirmed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.161-161
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• 2010

InAsSb alloy system 은 HgCdTe 를 대체하는 적외선 광소자 및 검출기 등에 응용이 가능한 유망한 물질이지만 정확한 유전함수 및 전이점의 연구는 미흡한 실정이다. 본 연구에서는 타원 편광 분석법을 이용하여 1.5 ~ 6 eV 의 분광 영역에서 As 조성비를 각기 (x = 0, 0.127, 0.337, 0.491, 0.726 및 1.00) 다르게 한 $InAs_xSb_{1-x}$ alloy의 유전함수를 측정하였다. 또한 표면에 자연산화막을 제거하기 위하여 Methanol 과 DI Water 로 표면을 세척 한 후 $NH_4OH$, Br in Methanol, HCl 등으로 적절한 화학적 에칭을 하여 산화막을 제거함으로서 순수한 InAsSb 의 유전함수를 측정할 수 있었다. 측정된 InAsSb 유전함수를 Standard analytic critical point line shape 방법으로 As 조성비에 따른 에너지 전이점을 얻을 수 있었다. 또한 얻어진 에너지 전이점 값을 이용하여 linear augmented Slater-type orbital 방법으로 전자 밴드 구조 계산을 하였고, 이를 바탕으로 $E_0$, $E_1$, $E_2$ 전이점 지역의 여러 전이점 ($E_1$, $E_1+\Delta_1$, $E_0'$, $E_0'+\Delta_0'$, $E_2$, $E_2+\Delta_2$, $E_2'$, $E_2'+\Delta_2$, $E_1'$) 의 특성을 정확히 정의할 수 있었다. 또한 As 조성비가 증가하면서 $E_2$, $E_2+\Delta_2$, $E_2'$, $E_2'+\Delta_2$ 전이점들이 서로 교차 되는 것을 발견하였고, 저온에서만 관측이 가능하였던 InSb 의 두 saddle-point (${\Delta_5}^{cu}-{\Delta_5}^{vu}$, ${\Delta_5}^{cl}-{\Delta_5}^{vu}$)를 상온에서 찾아내었다. 타원 편광 분석법을 이용한 전이점 연구 및 물성 분석은 InAsSb alloy 의 광학적 데이터베이스를 확보하는 성과와 더불어 새로운 디바이스기술 및 광통신 산업에도 유용한 정보가 될 것이다.

• Korean Journal of Optics and Photonics
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• v.8 no.6
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• pp.445-449
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• 1997

The complex refractive indices of $Ge_2Se_2Te_5$ which show reversible phase change between the crystalline phase and an amorphous one depending upon the annealing process have been determined in the spectral range of 0.7-4.5 eV. The $Ge_2Se_2Te_5$ films were DC sputter deposited on the crystalline silicon substrate. The spectro-ellipsometry data of a thick film were analyzed following the modelling procedure where the quantum mechanical dispersion relation were used for the complex refractive indices of both the cryastalline phase $Ge_2Se_2Te_5$ and and amorphous phase $Ge_2Se_2Te_5$, respectively. On the other hand, with the surface micro-roughness layer whose effective thickness was determined from AFM analysis, the spectro-ellipsometry data were numerically inverted to yield the complex refractive index of $Ge_2Se_2Te_5$ at each wavelength. With these set of complex refractive indices, the reflectance spectra were calculated and those spectra obtained from the numerical inversion showed better agreement with the experimental reflection spectra for both the cryastalline phase and an amorphous phase. Finally, the thin $Ge_2Se_2Te_5$ film which has the optimum thickness of 26 nm as the medium for optical recording was also analyzed and the quantitative result of the film thickness and the surface microroughness has been reported.

• Journal of the Korean Magnetics Society
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• v.11 no.1
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• pp.21-25
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• 2001

$\alpha$-Fe$_2$O$_3$ thin films were prepared on Si substrate by a pulsed laser deposition system and characterized by X-ray and Mossbauer spectroscopy. The appropriate conditions of pulsation was the power of 5.128 W/cm2 at on oxygen pressure of 0.1 Torr at a substrate temperature of 30$0^{\circ}C$. After that the film was heated at 80$0^{\circ}C$ for 1 day. The particles shape deposited on the film was ellipsoidal and the average length and width were 200~300 nm, 70~150 am respectively. The crystal structure was conformed to be of corundums symmetry with the hexagonal unit cell having a lattice constant of u = 5.03$\pm$0.05 $\AA$, c = 13.735$\pm$0.05 $\AA$. The average angles between the atomic spin and the magnetic hyperfine field of Fe ion were 38$^{\circ}$and 48$^{\circ}$ at above and blow the Morin transition temperature respectively. The Morin transition was found to occur at the temperature ranges from 200 K to room temperature and atomic spin direction was assumed to change from 48$^{\circ}$ to 80$^{\circ}$in respect to the c-axis.

• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.56-60
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• 2011

Optical properties of $T_{0.2}Fe_{2.8}O_4$ (T = V, Cr, Mn) thin films derived from ferrimagnetic $Fe_3O_4$ were investigated by spectroscopic ellipsometry in the 1~8 eV photon-energy range. The difference in optical-absorption spectrum between the ternary compounds and $Fe_3O_4$ was analyzed based on preferable sites in spinel structure and iconicity of the doped V, Cr, and Mn ions. The observed absorption spectra from $Fe_3O_4$ and the ternary compounds can be interpreted as mainly due to charge-transfer transitions of Fe d electrons characterized by absorption structures with wide energy width. Also, the observed absorption structures with narrow energy width can be interpreted as due to crystal-field transitions between different d electron configurations of tetrahedral $Fe^{3+}(d^5)$ ion. The transitions were described in terms of spin-polarized electronic states of $Fe_3O_4$.