• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.129-129
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• 2003

최근에 능동 영역 액정 표시 소자(Active Matrix Liquid Crystal Display, AMLCD)에서 고해상도와 빠른 응답속도를 요구하게 되면서부터 다결정 실리콘(poly-Si) 박막 트랜지스터(Thin Film Transistor, TFT)가 쓰이게 되었다. 그리고 일반적으로 디스플레이의 기판을 상대적으로 저가의 유리를 사용하기 때문에 저온 공정이 필수적이다. 따라서 새로운 저온 결정화 방법과 부가적으로 최근 디스플레이 개발 동향 중 하나인 대화면에 적용 가능한 공정인 금속유도 결정화 (Silicide Mediated Crystallization, SMC)가 연구되고 있다. 이 소자는 top-gated coplanar구조로 설계되었다. (그림 1)(100) 실리콘 웨이퍼위에 3000$\AA$의 열산화막을 올리고, LPCVD로 55$0^{\circ}C$에서 비정질 실리콘(a-Si:H) 박막을 550$\AA$ 증착 시켰다. 그리고 시편은 SMC 방법으로 결정화 시켜 TEM(Transmission Electron Microscopy)으로 SMC 다결정 실리콘을 분석하였다. 그 위에 TFT의 게이트 산화막을 열산화막 만큼 우수한 TEOS(Tetraethoxysilane)소스로 사용하여 실리콘 산화막을 1000$\AA$ 형성하였고 게이트는 3000$\AA$ 두께로 몰리브덴을 스퍼터링을 통하여 형성하였다. 이 다결정 실리콘은 3$\times$10^15 cm^-2의 보론(B)을 도핑시켰다. 채널, 소스, 드래인을 정의하기 위해 플라즈마 식각이 이루어 졌으며, 실리콘 산화막과 실리콘 질화막으로 passivation하고, 알루미늄으로 전극을 형성하였다 그리고 마지막에 TFT의 출력특성과 전이특성을 측정함으로써 threshold voltage, the subthreshold slope 와 the field effect mobility를 계산하였다.

• 전기학회논문지
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• 제66권10호
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• pp.1488-1493
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• 2017

Boron-doped ZnO:Al films were deposited by rf magnetron sputtering. The structural and optical property variations of the films with the boron amounts were studied. ZnO nanorods were grown on $SiO_2/Si$ wafers and glass by a hydrothermal method. ~50 nm-thick boron-doped ZnO:Al films were deposited on the substrates as seed layers. The mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine in DI water was used as a precursor for ZnO nanorods. The concentration of zinc nitrate hexahydrate and that of hexamethylenetetramine were 0.05 mol, respectively. ZnO nanorods were grown at $90^{\circ}C$ for 2 hours. X-ray diffraction was conducted to observe the crystallinity of ZnO nanorods. A field emission scanning electron microscope was employed to study the morphology of nanorods. Optical transmittance was measured by a UV-Vis spectrophotometer, and photoluminescence was carried out with 266 nm light. The ZnO nanorods grown on the 0.5 wt% boron-doped ZnO seed layer showed the best crystallinity.

• Progress in Superconductivity
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• 제9권1호
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• pp.74-79
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• 2007

We characterized the highly refined boron precursor powders which were attrition milled for different milling times. $MgB_2$ powder precursor was formed from elemental crystalline Mg and amorphous B powder. The microstructure was investigated by SEM. SEM results indicate that the size of the milled powders was reduced with increasing milling time, which were varied from 0 to 8 hours. We also studied thermal behavior of the starting precursor by DSC as a function of milling time. The thermal behavior of the powder precursors was influenced by milling time. In order to determine the thermal events at DSC peaks, we annealed the milled powder mixture at $600^{\circ}C$ and $650^{\circ}C$ under protective gas and then analyzed the formation of $MgB_2$ by the XRD. We observed that superconducting $MgB_2$ phase was formed at lower temperature by the longer high energy milling. These results show that the high energy milling of the boron precursor powder can improve the reactivity for the formation of $MgB_2$.

• 열처리공학회지
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• 제3권4호
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• pp.23-40
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• 1990

This study has been carried out to investigate into some effects of Mn content with varying amounts and austenite grain size on hardenability in boron-added Fe-C-Cr-Mo alloy systems. (1) Austenite grains have been found to hardly grow in the temperature range of $900^{\circ}C$ to $950^{\circ}C$, whereas they grow rapidly in the temperature range of $975^{\circ}C$ to $1100^{\circ}C$. (2) Austenite grain growth is considerably small with increasing holding time at a given austenitizing temperature and is, in particular, hardly found to occur at a temperature of $900^{\circ}C$. (3) The hardenability improves ramarkably as Mn content is increased at three different austenitizing temperatures $900^{\circ}C$, $1000^{\circ}C$ and $1100^{\circ}C$. (4) The maximum hardenability is obtained from steels A, B and C austenitized at the $900^{\circ}C$, although Mn content is varied in each specimen.

• 한국재료학회지
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• 제29권12호
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• pp.818-824
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• 2019

In this study, the direct water quenching technique is applied to validate the applicability of direct water quenching as a cooling method in the hot stamping process of 3.2 mm thick boron steel sheet. Cooling performance of conventional die quenching and direct water quenching is compared. Higher cooling rate is obtained by hot stamping with direct water quenching compared to die quenching. As the flow rate of cooling water increases, the cooling rate increases, and a high cooling rate of 71 ℃/s is achieved under flow rate conditions of 0.8 L/min. Through direct water quenching, the cooling time required for sufficient cooling of the sheet is reduced. Full martensitic microstructure is obtained under flow rate condition of 0.8 L/min. Hardness increases with increasing flow rate. From these results, it is verified that the direct water quenching is applicable to the hot stamping of thick boron steel sheet.

• 신재생에너지
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• 제8권1호
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• pp.24-34
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• 2012

The main issue of boron doped p-type czochralski-grown silicon solar cells is the degradation when they are exposed to light or minority carriers injection. This is due to the meta-stable defect such as boron-oxygen in the Cz-Si material. Although a clear explanation is still researching, recent investigations have revealed that the Cz-Si defect is related with the boron and the oxygen concentration. They also revealed how these defects act a recombination centers in solar cells using density function theory (DFT) calculation. This paper reviews the physical understanding and gives an overview of the degradation models. Therefore, various methods for avoiding the light-induced degradation in Cz-Si solar cells are compared in this paper.

• 열처리공학회지
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• 제23권6호
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• pp.315-322
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• 2010

Effect of hardenability, grain size and microstructural change according to the change of austenitizing temperature was analyzed in Jominy hardenability test of AISI 51B20 steel. Grain growth was small, 7 ${\mu}m$ and 12 ${\mu}m$ austenite grain sizes at austenitizing temperature of $900^{\circ}C$ and $1000^{\circ}C$, respectively, while rapid grain growth was observed up to 30 ${\mu}m$ austenite grain size at austenitizing temperature of $1100^{\circ}C$. As austenitizing temperature increased from $900^{\circ}C$ to $1100^{\circ}C$, hardenability in the region within 15 mm from end-quenched surface decreased due to the grains growth of bainite and martensite mixture, on the other hand the hardenability in the region exceeding 15 mm from end-quenched surface increased. Increased hardenability was attributed to different microstructures; pearlite, fine pearlite and bainite, and bainite and martensite structures at austenitizing temperature of $900^{\circ}C$, $1000^{\circ}C$ and $1100^{\circ}C$, respectively.

• 한국산업융합학회 논문집
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• 제6권4호
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• pp.299-305
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• 2003

This research is for the relationship with heat treatment cooling temprature and the characteristic of Mechanical properties of Boron-Addition-Steel, the main material and SM25C steel, the sub material, structure viewing fractography, hardness test, tensite test and are carried out after the manufacturing small-specimen treated with heat of $750^{\circ}C$, $850^{\circ}C$, $1050^{\circ}C$. The influence to the Mechanical properties accompanied by AISI51B20, Boron-Addition-steel shows the following result. 1. The influenc of heat treatment by the content of cabon-steel is dominant. Addition of boron result is Strengthening structure effectively by segregation and improving over all mechanical characters such as good. it results from the increase of temacity by the stability of inter granular with improvement of harden-ability. 2. Boron-Addition-Steel exist in the from of martensite structure accompanied by the ferrite precipitition centering around grain boundary, and is improved to Hv 200. 3. The height of harden-ability and fatigue stress the influence of heat results from crystal structure of martensite by difference of strength level in the structure of ferrite and doesn't have am effect on sensibility of temperature, and turns out to defend on production and growth of Matrix-structure-factor.

• 소성∙가공
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• 제26권1호
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• pp.5-10
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• 2017

Fluid cooling is one of the manufacturing processes used to control mechanical properties, and is recently used for hot stamping of automobile parts. The formed part at room temperature is heated and then cooled rapidly using various fluids in order to obtain better mechanical properties. The formed part may undergo excessive thermal deformation during rapid cooling. In order to predict the thermal deformation during fluid cooling, a coupled simulation of different fields is needed. In this study, cooling simulation of boron steel square sheet was performed. Material properties for the simulation were calculated from JMatPro, and three convection heat transfer coefficients such as water, oil and air were obtained from the experiments. It was found that the thermal deformation increased when the difference of cooling rate of sheet face increased, and the thermal deformation increased when the thickness of sheet decreased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.30-33
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• 2004

Shallow p+-n junctions were formed by low-energy ion implantation and dual-step annealing processes The dopant implantation was performed into the crystalline substrates using $BF_2$ ions. The annealing was performed with a rapid thermal processor and a furnace. FA+RTA annealing sequence exhibited better junction characteristics than RTA+FA thermal cycle from the viewpoint of junction depth. A new simulator is designed to model boron diffusion in silicon, which is especially useful for analyzing the annealing process subsequent to ion implantation. The model which is used in this simulator takes into account nonequilibrium diffusion, reactions of point defects, and defect-dopant pairs considering their charge states, and the dopant inactivation by introducing a boron clustering reaction. Using a resonable parameter values, the simulator covers not only the equilibrium diffusion conditions but also the nonequilibrium post-implantation diffusion. Using initial conditions and boundary conditions, coupled diffusion equation is solved successfully. The simulator reproduced experimental data successfully.