• Title/Summary/Keyword: 백금기판

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Electrochemical Analysis of the Electrodeposition of Platinum Nanoparticles (백금 나노입자 전착의 전기화학적 분석)

  • Lee, Hae-Min;Cho, Sung-Woon;Kim, Jun-Hyun;Kim, Chang-Koo
    • Korean Chemical Engineering Research
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    • v.53 no.5
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    • pp.540-544
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    • 2015
  • A bath for electrodeposition of platinum nanoparitcles on low-cost graphite substrates was developed to attach nanoparticles directly onto a substrate, and electrochemical characteristics of the electrodeposition of platinum nanoparticles were investigated. The reaction mechanism was examined by the analysis of polarization behavior. Cyclic voltammetry measurements revealed that the elecrodeposition of platinum nanoparticles was limited by mass transfer. The chronoamperometric study showed an instantaneous nucleation mechanism during the electrodeposition of platinum nanoparticles on graphite. Because graphite is much cheaper than other carbon-based substrates, the electrodeposition of platinum nanoparticles on the graphite is expected to have useful applications.

Graphene Synthesis on Pt Substrate using a Chemical Vapor Deposition Method (열화학기상증착법에 의한 백금 기판 위의 그래핀 합성)

  • Lee, Byeong-Joo;Jeong, Goo-Hwan
    • Journal of Industrial Technology
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    • v.35
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    • pp.89-94
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    • 2015
  • Graphene is a carbon-based two dimensional honeycomb lattice with monoatomic thickness and has attracted much attention due to its superior mechanical, electronic, and physical properties. Here, we present a synthesis of high quality graphene on Pt substrate using a chemical vapor deposition (CVD). We optimized synthesis condition with various parameters such as synthesis temperature, time, and cooling rate. Based on the results, we concluded that graphene synthesis is driven by mainly carbon adsorption on surface rather than precipitation of carbon which is dominant in other metal substrate. In addition, Pt substrate can be repeatedly used several times with high quality graphene.

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Preparation of Pt-Black Absorber by Electroplating (전기도금법에 의한 백금 흑 수광체 제조)

  • Bae, Seong-Ho;Lee, Sang-Man;Lee, Mun-Ho
    • Korean Journal of Crystallography
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    • v.7 no.2
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    • pp.133-146
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    • 1996
  • Morphology and infrared absorbing characteristics of Pt-black prepared by electroplating have been investigated with XRD, SEM, and IR spectrophotometer. The Pt later was coated on Au-coated alumina/glass substrates for 1-5 min at pH 1.0-1.5, where a solution of platinum chloride and lead acetate was used as the electrolyte. At the electrical current density of 20-50 mA/㎠, the Pt-black showed a dendritic growth which was characterized by a "tree" shape. Absorptivity of above 90% at IR radiation of 10 m was observed for the Pt absorbing layer with an area density of ≥1.3mg/㎠.

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The Study on Characteristics of Platinum Thin Film RTD Temperature Sensors with Annealing Conditions (열처리 조건에 따른 백금박막 측온저항체 온도센서의 특성에 관한 연구)

  • Chung, Gwiy-Sang;Noh, Sang-Soo
    • Journal of Sensor Science and Technology
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    • v.6 no.2
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    • pp.81-86
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    • 1997
  • Platinum thin films were deposited on $SiO_{2}/Si$ and $Al_{2}O_{3}$ substrates by DC magnetron sputtering for RTD (resistance thermometer devices) temperature sensors. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature and time. We made Pt resistance pattern on $Al_{2}O_{3}$ substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied linearly within the range of measurement temperature. At annealing temperature of $1000^{\circ}C$, time of 240min and thin film thickness of $1{\mu}m$, we obtained TCR value of $3825ppm/^{\circ}C$ close to the Pt bulk value.

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RF Magnetron Sputtering을 이용하여 제작한 불용성 촉매전극의 해수전해 특성

  • Lee, Hyeon-Seok;Kim, Se-Gi;Seok, Hye-Won;Choe, Heon-Jin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.29.2-29.2
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    • 2011
  • 수용액 상에서 유기물이나 무기물의 전해산화에는 높은 산소과전압과 그 화학종에 대한 화학적, 물리적 안정성이 요구되며, 이러한 요구 조건을 만족하는 소재로써 백금족의 원소가 통상 사용되고 있으나, 가격이 매우 비싸다는 단점을 가지고 있다. 특히 고전류밀도 폐수처리 불용성 전극은 수용액을 전기분해할 때 높은 전류밀도를 낼 수 있으며, 폐수에 혼합되어 있는 각종 화학적 성분에 대한 화학적, 물리적 내구성이 있는 전극으로서, 현재 기존의 수처리용 전극은 금속 Ti을 기판으로 하여 그 위에 불용성 촉매로써 전도성 금속염을 도포, 열처리를 반복하여 산화물의 형태로 수 ${\mu}m$의 두께로 코팅하는 이른바, DSA (Dimensionally Stable Anodes) 전극을 사용하고 있는데, 이는 제조 단가의 상승과 금속 Ti 기판 상에 코팅된 전도성 금속산화물의 미약한 접착력으로 인한 탈리로 전극 전체의 성능 저하 및 수명 단축을 초래하는 문제점이 있다. 본 연구에서는 상기의 문제점을 개선하고자 대표적 불용성 촉매 물질인 백금을 RF magnetron 스퍼터링방식으로 100~300 nm 두께로 성막하여 Ti 기판에 대한 불용성 촉매 물질의 부착력과 내구성 및 모의 해수에 대한 해수전해 특성 등을 평가하였다.

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The Fabrication and Characteristics of RTD(Resistance Thermometer Device) for Micro Thermal Sensors (마이크로 열 센서용 측온저항체 온도센서의 제작 및 특성)

  • Chung, Gwiy-Sang;Hong, Seog-Woo
    • Journal of Sensor Science and Technology
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    • v.9 no.3
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    • pp.171-176
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    • 2000
  • The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

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전해에칭 및 양극산화를 이용한 알루미늄 소재 열전모듈 기판 제작

  • Choe, Lee-Taek;Son, In-Jun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.127-127
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    • 2017
  • 열전모듈이란 온도차를 기전력으로 바꾸거나, 반대로 기전력으로 온도 차이를 만들어내는 모듈이다. 열전발전의 경우, 고열 부분의 열이 빠르게 방출되지 못하면 소자와 기판의 손상을 가져올 수 있기 때문에 열전모듈 기판의 방열성능은 매우 중요하다. 따라서 열전모듈이 실제 발전용으로 사용되기 위해서는 방열성이 높은 기판, 즉 열전도도가 높은 기판이 적용되어야 한다. 그러나 현재 일반적으로 사용되는 알루미나는 그 열전도도가 30 w/mK 정도밖에 되지 않아 그 방열성능이 많이 떨어진다. 이를 해결하기 위해 열전도도가 높은 소재를 베이스 기판으로 한 모듈이 연구되어져야 한다. 따라서 본 연구에서는 열전도도가 237 w/mk 정도로 높은 알루미늄을 기판으로 이용해 열전모듈 기판을 제조하고자 하였다. 이를 위해 알루미늄 베이스 기판 위에 전해에칭, 수화처리, 양극산화 및 전기동도금을 실시하였다. 알루미늄 상에 양극산화처리를 통하여 절연층 역할을 할 산화피막을 형성하고, 백금을 스퍼터링법으로 코팅해 전도성을 부여하였으며 그 이후 바로 전기 동 도금을 실시하였다. 또한 전처리 과정으로 전해에칭을 통해 표면의 조도를 증가시켰고 갈고리 효과를 통해 밀착력을 증가시키고자 하였다. 본 연구의 결과, 기판으로 사용하기 적합한 절연특성과 기판의 열전도도 측정을 통한 우수한 방열성능도 확인할 수 있었다. 뿐만 아니라 Cross Cut Adhesion Test를 통하여 밀착력도 우수하다는 것을 확인할 수 있었으며 표면과 단면관찰을 통해 목적대로 기판의 도금이 잘 이루어 졌다는 것을 알 수 있었다. 이러한 공정을 통해 제조된 열전모듈 기판은 우수한 방열성능을 통하여 열전모듈의 성능과 수명을 한층 더 높일 수 있을 것으로 기대된다.

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Parameter Analysis of Platinum Silicide Rectifier Junctions acceding to measurement Temperature Variations (측정 온도 변화에 따른 백금실리사이드 정류성 접합의 파라미터 분석)

  • 장창덕;이용재
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 1998.05a
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    • pp.405-408
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    • 1998
  • In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 5$0^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. Measurement electrical parameters are forward turn-on voltage, reverse breakdown voltage, barrier height, saturation current, ideality factor, dynamic resistance acceding to junction concentration of substrates and temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation current and ideality factor were increased by substrates concentration variations. Reverse breakdown voltage and dynamic resistance were increased by temperature variations.

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Fabrication of thick film type catalytic combustible gas sensor using parallel resistance heat source (병열형가열부를 이용한 후막형 접촉연소식 가스센서 제조)

  • Park, Jun-Sik;Lee, Jae-Suk;Hong, Sung-Jei;Park, Hyo-Derk;Shin, Sang-Mo
    • Journal of Sensor Science and Technology
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    • v.5 no.1
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    • pp.23-29
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    • 1996
  • Thick film type gas sensors with parallel Pt heaters were fabricated by screen printing process and investigated sensitivities for methane gas. The TR7905 was selected as Pt paste for heater by characterization the properties of TCRs and thick film microstructures. The average resistance of parallel Pt heaters was $1.8{\Omega}$, and the best TCR obtained was $3685\;ppm/^{\circ}C$. On the top of the Pt heaters, a sensing layer added with Pt and Pd as catalyst paste was screen printed and heat treated. The sensitivity of the sensor was 4.3mV/1000ppm for methane. The power consumption of the sensors was 2.12watts.

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Development of Pt-free counter electrode for dye-sensitized solar cell (Pt free 염료감응형 태양전지 전극에 대한 연구)

  • Hwang, Hyun Suk;Park, Yong Seob
    • Journal of Satellite, Information and Communications
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    • v.9 no.2
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    • pp.107-109
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    • 2014
  • Dye-sensitezed solar cell(DSSC) has aroused intense interest owing to its competitive price and stabilized properties than Si based solar cells. Recently, many studies have been reported on the DSSC, especially development of Pt-free counter electrode. In this paper, graphene is chosen counter electrode for low cost material and developed its properties. To estimate the properties of counter electrode, graphene and Pt thin films have been fabricated on FTO substrates respectively, than the films are tested AFM and J-V evaluation method. A graphene of 0.1 wt% has shown current density of 11.68 mA/cm2, maximum efficiency of 4.34% which is similar with that of Pt counter electrode. It confirmed that graphene could be good material for counter electrode if its synthesizing conditions were developed.