• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.173-176
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• 2004

Silicon thin films on p-type(100) silicon substrate have been prepared by a pulsed laser deposition(PLD) technique using a Nd:YAG laser. The pressure of the environmental gas during deposition was 1 Torr. After deposition, silicon thin film has been annealed in nitrogen ambient. Strong blue photoluminescence(PL) has been observed at room temperature. We report the optical properties of silicon thin films with the variation of the deposition parameters.