• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.3
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• pp.60-67
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• 2011

Visible light communication system transmits data by controlling light emission of LED and receives data through photo detecter, which is considered as one of strong candidates of next generation wireless communication systems. The transmission capacity of visible light communication system depends on light intensity emitted from LED, sensitivity of PD, distance between transmitter and receiver, angle of incidence at the receiver. In particular, the receiver's vertical and horizontal movement changes distance between transmitter and receiver and angle of incidence, which may degrades transmission capacity of system. In this paper, we propose an estimation algorithm of receiver's position and angle based on tracking of received light intensity for indoor visible light communication systems. The performance evaluation of proposed algorithm confirms that the estimation algorithm of receiver's position and angle is quite important for visible light communication system to improve its transmission capacity.

• Progress in Medical Physics
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• v.25 no.1
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• pp.31-36
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• 2014

We aimed to evaluate the dosimetric characteristics of reproducibility, linearity and dose dependence of optical stimulated luminance dosimeter (OSLD) in the Co-60 Gamma-rays and to analyze with a precedent study in field of the diagnostic radiography and radiotherapy. The reproducibility was 0.76% of the coefficient of variation, the homogeneity was within 1.5% of the coefficient of variation and OSLD had supra-linear response more than 3 Gy. So the correlation between dose and count was fitted by quadratic function. The count depletion by repeated reading was 0.04% per reading regardless of the irradiated dose. And the half time of decay curve according to the irradiated dose was 0.68 min. with 1 Gy, 1.04 min. with 5 Gy, and 1.10 min. with 10 Gy, respectively. In case of annealing for 30 min, the removal rate was 88% with 1 Gy, 90% with 5 Gy, and 92% with 10 Gy, respectively and 99% in case of annealing time for 4 hour. It is feasible to use OSLDs for dose evaluation in Co-60 Gamma-rays when considering the uncertainty on the procedure according to the irradiated dose.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.679-679
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• 2013

태양전지는 계속되는 유가상승과 무소음 무공해의 녹색에너지원이라는 점에서 각광받고 있다. 더욱이 발전단가가 높기 때문에 특히 저가의 다결정 실리콘 태양전지의 연구가 활발히 진행되고 있다. 태양전지의 texturing 공정은 광 포획 효과를 극대화 시킨다. 이에 따라 웨이퍼 표면에 텍스쳐를 형성하여, 광학적 손실을 줄이는데, 일반적으로 alkaline etching (WET) 공정과 reactive ion etching (RIE) 공정이 사용된다. 본 연구에서는 RIE, WET 공정을 사용하여 만든 texturing 구조의 태양전지를 모듈 공정 진행 전 특성평가를 한 후 다시 모듈 공정 후 특성평가를 진행하였다. 특성평가는 태양전지의 전류-전압 곡선을 통해 개방전압, 단락전류, 곡선인자 을 측정하고, 파장에 따른 양자효율 및 반사율을 측정하였다. 또한 태양전지의 전기에너지를 가하여 생성되는 전계발광 현상과 NIR camera를 이용하여 Grain의 Dark Area 및 Micro crack을 검출하였다. 이와 같은 모듈 공정 전/후 특성을 측정하고, 이를 비교 분석하여 BIPV 적용 시 태양전지의 동작특성을 확인하였다.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.127-134
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• 2011

We investigate the crystallographic orientation and strain states of the Ni/Ag ohmic contacts on p-type GaN. The Ag film in the Ni/Ag contact was severely agglomerated during high temperature annealing in air ambient. As a results, after annealing for 24 h, the Ni/Ag contact shows non-linear I-V curve and low light reflectance of ~21% at 460 nm wavelength. High-resolution X-ray diffraction results show that the interplanar spacing of Ag (111) planes is almost same to that of bilk Ag after annealing for 24 hrs, indicating that the in-plane tensile strain in the Ag film was fully relaxed due to the Ag agglomeration.

• Journal of the Korean Vacuum Society
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• v.16 no.1
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• pp.27-32
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• 2007

We have investigated photoluminescence(PL) spectra of four $In_xGa_{1-x}N(x=0.15)/GaN$ multiple quantum well(MQW) structures with different well widths in order to study a phenomenon on crystal phase separation. The asymmetic behavior of PL spectra becomes stronger with increase of the well width from 1.5 nm to 6.0 nm, which indicates dual-peak nature. Analyzing the dual-peak fit PL spectra, we have observed that the intensity of low-energy shoulder peak rapidly becomes stronger, compared to that of high-energy peak corresponding to a transition in InGaN QW. It suggests that InGaN QW has two phases with tiny different In compositions, and that In-rich(InN-like) phase forms more and more relatively than stoichiometric InGaN(x=0.15) phase by the InN phase separation mechanism as the QW width increases. PL spectrum of 6.0-nm sample shows an additional peak at low-energy lesion(${\sim}2.0\;eV$) whose energy position is almost the same as a defect band of yellow luminescence frequently observed in GaN epilayers. It may be due to a defect resulted from In deficiency formed with development of the phase separation.

• Clinical and Experimental Reproductive Medicine
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• v.17 no.1
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• pp.71-80
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• 1990

New immunoassay systems for the detection of anti-sperm antibodies were developed. For this, sperm surface protein was purified by the immunoaffinity column prepared by the coupling of rabbit anti-human IgG antibodies to Sepharose-4B. Fraction eluted by tris-HCI buffer containing SDS showed a single band having molecular weight of about 60KD on electrophoresis. Enzyme HRP labelled goat anti-human IgG and chemiluminescence aminobutylethyl-isoluminol(ABEI) labelled rabbit anti-human IgG were used for ELISA and CIA, respectively. These two labelled conjugate bound well with human IgG. When serum dilution curves were made to titrate positive serums, two kinds of curves with steep and sluggish slopes were obtained Serum samples were categorized into 3 groups: positive, weak positive and negative based on slope of curve and O.D. values at 1:160 dilution of serum. When ELISA and CIA were compared to conventional method Kibrick test by the determinations of 62 male serums with different diagnosis, the results of ELISA and CIA agreed well, but both disagreed with that of Kibrick test. This study showed that purified sperm surface antigen can be used to develope solid-phase immunoassay systems such as ELISA and CIA which may eliminate the problems encounted the immobilization of living sperm in other tests.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.297-297
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• 2012

양자점은 공간적으로 세 방향 모두 전하의 운동을 제한하는 0차원 구조로 불연속적인 상태 밀도를 가진다. 이런 양자점의 특성은 광통신용 소자, 레이저 다이오드 등과 같은 광학 및 전자 장치에 응용될 수 있기 때문에 많은 주목을 받아 활발히 연구되어 왔다. 본 연구에서는 MBE 장비를 이용하여 GaAs 기판위에 InAs 양자점을 성장시키는 동안 As의 공급을 임의로 차단시켜 양자점 형성 조건을 변화시킨 시료들의 광학적 특성을 Photoluminescence (PL) 와 Time-resolved PL (TRPL) 실험을 이용하여 분석하였다. GaAs (001) 기판 위에 GaAs buffer layer를 $610^{\circ}C$에서 성장한 후, $470^{\circ}C$에서 As 공급 조건 변화에 따른 InAs 양자점을 성장하였다. 양자점을 성장한 후 GaAs cap layer를 $610^{\circ}C$에서 성장하였다. InAs 양자점 시료들은 In을 20초 공급하는 동안 As의 공급과 차단을 각각 1초, 2초, 3초의 일정한 간격으로 반복하였다. 10 K에서 각각의 시료들의 PL을 측정한 결과 As 공급과 차단을 2초씩 반복한 T2시료에서 PL 세기가 가장 좋게 나타났으며, 3초씩 반복한 T3시료에서 가장 나쁘게 나타났다. PL 피크는 공급과 차단을 1초씩 반복한 T1 시료가 1.23 eV, T2 시료가 1.24 eV, T3 시료가 1.26 eV에 나타났으며, As의 차단시간이 증가함에 따라 PL 피크가 높은 에너지로 이동함을 보였다. 발광파장에 따른 PL 소멸은 파장이 증가함에 따라 점차 느려지다가 PL 피크 근처에서 가장 느린 소멸곡선을 보이고, 파장이 더 증가하였을 때 점차 빠르게 소멸하였다. As 공급 조건의 변화에 따라 InAs 양자점의 크기와 밀도, 모양 등이 변하는 것을 Atomic Force Microscope (AFM) image를 통하여 확인하였으며, PL과 TRPL을 이용하여 InAs 양자점의 광학적 특성을 분석하였다.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.127-136
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• 2001

A stoichiometric mixture of evaporating materials for ZnGa₂Se₄single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, ZnGa₂Se₄mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were 610℃ and 450℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnGa₂Se₄single crystal thin films measured from Hall effect by von der Pauw method are 9.63×10/sup 17/㎤ and 296 ㎠/V·s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the ZnGa₂Se₄single crystal thin film, we have found that the values of spin orbit splitting △so and the crystal field splitting Δcr were 251.9meV and 183.2 meV at 10 K, respectively. From the photoluminescence measurement on th ZnGa₂Se₄single crystal thin film, we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (A°, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral acceptor bound excition were 11 meV and 24.4 meV, respectivity. By Haynes rule, an activation energy of impurity was 122 meV.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Journal of the Korean Society of Marine Environment & Safety
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• v.28 no.1
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• pp.1-9
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• 2022

The effect of sediments in a waste dumping area on marine organisms was evaluated using sediment toxicity tests with a benthic amphipod (Monocorophium acherusicum) and bioluminescent bacterium (Vibrio fischeri) in accordance with the Korean Standard Method for Marine Wastes (KSMMW). Nine sites in the East Sea-Byeong, East Sea-Jeong, and Yellow Sea-Byeong areas were sampled from 2016 to 2019. The test results showed that the relative average survival rate (benthic amphipods) and relative luminescence inhibition rate (luminescent bacteria) were below 30%, which were judged to be "non-toxic." However, in the t-test, a total of 12 benthic amphipod samples (6, 1, 1, and 4 in 2016, 2017, 2018, and 2019, respectively) were significantly different (p<0.05) from the control samples. To identify the source of toxicity on benthic amphipods, a simple linear regression analysis was performed between the levels of eight heavy metals (Cr, As, Ni, Cd, Cu, Pb, Zn, and Hg) in sediments and the relative average survival rate. The results indicated that Cr had the highest contribution to the toxicity of benthic amphipods (p = 0.000, R2 = 0.355). In addition, Cr was detected at the highest concentration at the DB-85 station and exceeded the Marine Environment Standards every year. Although the sediments were determined as "not toxic" according to the ecotoxicity criteria of the KSMMW, the results of the statistical significance tests and toxicity identification evaluation indicated that the toxic effect was not acceptable. Therefore, revising the criteria for determining the toxic effect by deriving a reference value through quantitative risk assessment using species sensitivity distribution curves is necessary in the future.