• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.17-23
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• 2008

We have investigated the properties of the novel rectangular ring lasers containing active and passive regions in a InP material system. The rectangular ring laser consists of four low loss total internal reflection mirrors and a directional coupler made out of passive three waveguide. Two different lasers haying active lengths of 250 and $350{\mu}m$ and total cavity lengths of 580 and $780{\mu}m$ are fabricated, respectively. For both devices lasing thresholds of 38 mA is obtained at room temperature and under continuous wave operation. Lasing is predominantly single mode with the side mode suppression ratio better than 20 dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.59-67
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• 2006

We demonstrate bidirectional long-reach 35-channel dense wavelength division multiplexing-passive optical network(DWDM-PON) based on wavelength-locked Fabry-Perot laser diodes (F-P LDs). The mode control of F-P LD enhances output power at decreased the required injection power. We show packet-loss-free transmission in all 70 channels at 125 Mb/s per channel line rate through 70 km of single mode fiber without optical amplifier The DWDM-PON can consolidate a metro network into an access network by bypassing the central offices within its reach. The proposed DWDM-PON can accommodate about 80 subscribers with an EDFA-based broadband light source. Further expansion up to 100 subscribers is possible with a semiconductor-based BLS.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.35-44
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• 2006

Reflective semiconductor optical amplifiers(R-SOAs) were designed with high gain, wide optical bandwidth, high thermal reliability and wide modulation bandwidth in TO-can package for the transmitter of wavelength division multiplexed-passive optical network(WDM-PON) application. Double trench structure and current block layer were introduced in designing the active layer of R-SOA to enable high speed modulation. The injection power requirement and the viable temperature range of WDM-PON system are experimentally analysed in based on Amplified Spontaneous Emission(ASE)-injected R-SOAs. The effect of the different injection spectrum in the gain-saturated R-SOA was experimentally characterized based on the measurements of excessive intensity noise, Q factor, and BER. The proposed spectral pre-composition method reduces the bandwidth of injection source below the AWG bandwidth and thereby avoids spectrum distortion impeding the intensity noise reduction originated from the amplitude squeezing.

• Korean Journal of Optics and Photonics
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• v.28 no.1
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• pp.22-27
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• 2017

Time-encoded near-infrared spectroscopy (NIRS) system is proposed, based on a near-infrared (NIR) swept laser source, for comparison to the conventional NIRS method using a detector-type spectrometer. The cavity of the NIR swept laser source consists of a semiconductor optical amplifier (SOA) with a gain region around 800 nm, and several fiber-optic components. To change the output wavelength in time using an applied electric radio-frequency signal, an acousto-optic tunable filter (AOTF) is introduced in the fiber ring cavity configuration. To demonstrate the feasibility of an NIR swept laser source for NIRS imaging, the spectroscopic comparison of two kinds of absorbance-measuring systems a detector-type spectrometer using a white light source, and a source-type spectrometer using an NIR swept laser is successfully performed with an NIR-absorbing dye.