• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.246-252
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• 2011

The semiconducting $MnSi_{1.73}$ compound has been recognized as a thermoelectric material with excellent oxidation resistance and stable characteristics at elevated temperature. In the present work, we applied mechanical alloying (MA) technique to produce $MnSi_{1.73}$ compound using a mixture of elemental manganese and silicon powders. The mechanical alloying was carried out using a Fritsch P-5 planetary mill under Ar gas atmosphere. The MA powders were characterized by the X-ray diffraction with Cu-$K{\alpha}$ radiation, thermal analysis and scanning electron microscopy. Due to the observed larger loss of Si relative to Mn during mechanical alloying of $MnSi_{1.73}$, the starting composition of a mixture Mn-Si was modified to $MnSi_{1.83}$ and then $MnSi_{1.88}$. The single $MnSi_{1.73}$ phase has been obtained by mechanical alloying of $MnSi_{1.88}$ mixture powders for 200 hours. It is also found that the grain size of $MnSi_{1.73}$ compound powders analyzed by Hall plot method is reduced to 40 nm after 200 hours of milling.

• Korean Chemical Engineering Research
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• v.47 no.6
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• pp.688-694
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• 2009

A spray-type cleaning agent in utilizing dust-remover on PCB was chosen to study the cleanliness test and efficiency. In order to choose alternative environmental-friendly cleaning agents, it is important that the systematic selection procedures should be introduced and applied through the evaluation of their cleaning ability, environmental characteristics, and economical factors, and that the objective and effective evaluation methods of cleanliness should be established for the industry. A novel cleaning evaluation method with scanning electron microscopy/energy-dispersive X-ray analysis of surface observation evaluation method and an infra-red thermography camera(THERMOVISION A20 model) was studied in this work. The sound card(CT-2770 model) cut by $2{\times}2cm$ size was used as a part, and before and after the spray cleaning, the cleanliness was observed by the image analyzer of SEM and further the removal efficiency of dust was quantitatively evaluated by the component analysis of EDX. For the parts of P4TE model motherboard and IPC-A-36 PCB plate, before and after the spray cleaning, temperature differences were measured and compared at room temperature and 50 oven temperature by an infra-red thermography camera in the contaminants of dust and iron powder.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.8
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• pp.843-850
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• 2012

To satisfy the operational requirements of surveillance radar and the operational concept of a ship combat system, an active-array-type antenna was designed using solid-state transmitters and receivers. The arrangement of the constituent electronic components of the antenna system, considerably large in size, and therefore, the antenna needs to be housed in a box. The rotational antenna system installed on a ship mast is installed in a sealed housing to protect the interior equipment from environmental conditions. The outer shape of the housing is that the antenna should be capable of rotating normally despite strong winds. Furthermore, in recent times, designs with low radar cross section (RCS) have attracted attention from the viewpoint of improving the stealth of the ship. In this light, four types of models are proposed for the outer shape design of the antenna system, and they are investigated from the viewpoint of low RCS design as well as wind load.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.63-63
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• 2011

비정질 반도체/절연체의 직류와 교류 전도도 스펙트럼은 주파수에 대한 거듭제곱의 법칙 (power-law)을 따르는 보편성이 있음이 확인되었다. 이러한 보편성은 다양한 비정질 반도체/절연체 물질에서 공통적으로 관찰되었으며 현재까지 이 보편성의 물리학적 원인이 정확히 규명되지 않고 있다. 이 보편성을 설명하기 위한 모델로서 비정질 반도체/절연체 내의 전자/정공의 호핑 전도기구 (hopping conduction mechanism)가 제시된 바 있으며 다양한 비정질 시스템의 전도도 스펙트럼 해석에 인용되고 있다. 그러나 직.교류 전도기구 사이의 상이함에 대한 이견이 있으며 현재까지 정확히 규명된 바 없다. 본 연구에서는 비정질 GeSe 반도성 물질의 전도도 스펙트럼을 10 Hz-1 MHz 주파수 대역에서 측정하였으며 이를 위해 백금 상.하부 전극을 갖는 크로스바(crossbar)형의 금속-절연체-금속구조의 2단자 소자를 제작하였다. 측정 스펙트럼으로부터 본 연구의 GeSe 물질이 앞서 언급한 비정질 물질의 보편성에 부합함을 확인하였으며 스펙트럼 내의 직류와 교류 성분을 명확히 분리할 수 있었다. 직.교류 전도도 스펙트럼의 명확한 기구 분리를 위하여 4개의 상이한 면적을 갖는 크로스바에 대한 측정을 실시하였으며 그 결과로 직.교류 전도도의 상이한 면적 의존성을 관찰하였고 이를 근거로 직.교류 전도도가 서로 다른 전도기구에 기인함을 간접적으로 알 수 있었다. GeSe의 전도도 스펙트럼의 온도 의존성 실험을 위해 시편의 온도를 20-300 K 범위에서 변화시키며 전도도 스펙트럼을 측정하였으며 이를 통해 교류 전도도 스펙트럼 내에 상이한 두 개의 전도 기구가 혼재해있음을 규명하였다.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.17-24
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• 2022

Colloidal quantum dots (QDs) have gained attention for applications in quantum dot light emitting diodes (QLEDs) due to their high photoluminescence quantum yield, narrow emission spectra, and tunable bandgap. Nevertheless, non-radiative recombination induced by electron and hole imbalance deteriorates the device efficiency and stability. To overcome the problem, researchers have been trying to enhance hole transport properties of hole transporting layers (HTL) and/or slow down the electron injection in electron transport layer (ETL). Here, we summarize two approaches: i) development of interfacial materials between QD and ETL (or HTL); ii) engineering of HTL by blending or multi-layer approaches.

• Journal of the Korean Chemical Society
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• v.31 no.4
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• pp.301-307
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• 1987

The electrical conductivity of highly pure polycrystalline sample of $La_2O_3$ has been measured at temperatures from $600^{\circ}C$ to $1,050^{\circ}C$ and oxygen pressure range of $1{\times}10^{-6}$ torr to $1{\times}10^2$ torr. The defect structure and semiconductor type are investigated by measuring the temperature and oxygen pressure dependences of electrical conductivity. Sintered $La_2O_3$ exhibits the electrical conductivities in the range of $1{\times}10^{-9}\;to\;1{\times}10^{-3}\;ohm^{-1}{\cdot}cm^{-1}$ under the above oxygen pressures. The oxygen pressure dependences on electrical conductivity are characterized by 5.3 at $1,000^{\circ}C$ and 5.7 at $700^{\circ}C$ and more higher values of 9∼14 below $700^{\circ}C$. The increase in n value with decreasing temperature indicates that a simple conduction mechanism does not exist in this material. The conduction carriers are not metal vacancy but oxygen ion at lower pressures. The conduction data indicate a significant ionic conduction at lower temperatures and electronic conduction at higher temperatures.

• Journal of IKEEE
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• v.23 no.4
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• pp.1457-1460
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• 2019

In this paper, we proposed the development of a mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarm that can be location-tracked and irradiated. To measure radiation exposure dose, we use the PIN-Diode radiation measurement sensor module, a semi-conductive radiation measurement sensor that can minimize size and weight. The design for removing leakage current is carried out to enhance the characteristics of the radiation measurement sensor using PIN-Diode. The IMU sensor module is used to estimate the location of the current fireman at the same time as the accident estimate by adding together the data and the values for acceleration on the three axis. Experiments were conductied by an authorized testing agency to determine the efficiency of the proposed mixed sensor parts for integrated radiation exposure protection fireman's life-saving alarms. The cumulative dose measurement range was measured in the range of 10 μSv to 10 mSv, the highest level in the world. The accuracy was measured from ±6.3% to ±9.0% (137 Cs) and normal operation was found at the international standard of ±15%. In addition, positional accuracy was measured within ±10%, resulting in a high level of results, demonstrating its effectiveness. Therefore, it is expected that more firemen will be able to provide with superior performance integrated radiation exposure protection fireman life-saving alarm.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.19-25
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• 2008

In this study, we fabricated Organic Thin Film Transistors(OTFTs) with $C_{60}$ hole injection layer between organic semiconductor(pentacene) and metal electrode, and we compared the electrical characteristics of OTFTs with/without $C_{60}$. When the $C_{60}$ hole injection layer was introduced, the mobility and the threshold voltage were improved from 0.298 $cm^2/V{\cdot}s$ and -13.3V to 0.452 $cm^2/V{\cdot}s$ and -10.8V, and the contact resistance was also reduced. When the $C_{60}$ is inserted, the hole injection was enhanced because the $C_{60}$ prevent the unwanted chemical reaction between pentacene and Au. Furthermore, we fabricated the OTFTs using Al as their electrodes. When the OTFTs were made by only aluminum electrode, the channel were not mostly made because of the high hole injection barrier between pentacene and aluminum, but when the $C_{60}$ layer with an optimal thickness was applied between aluminum and pentacene, the device performances were obviously enhanced because of the vacuum energy level shift of Al and the consequent decrease of the hole injection barrier which was induced by the interface dipole formation between $C_{60}$ and Al. The mobility and $I_{ON}/I_{OFF}$ current ratio of OTFT with $C_{60}/Al$ electrode were 0.165 $cm^2/V{\cdot}s$ and $1.4{\times}10^4$ which were comparable with the normal Au electrode OTFT.

• Journal of the Korean Chemical Society
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• v.38 no.8
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• pp.547-551
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• 1994

A series of samples in the $Nd_{1-x}Ba_xFeO_{3-y}$ system has been prepared by heating the reactants to$1200^{\circ}C$ under an ambient atmosphere, and the solid solutions were identified by X-ray power diffraction analysis. The crystal systems of samples with x = 0.00 and 0.25 were found to be orthorhombic whose local symmetry is similiar to the distorted octahedral with orthoferrite type one, whereas those with x = 0.50 and 0.75 to be the cubic system. Since Fe ions in the solid solutions are a mixed valence state between $Fe^{3+}\;and\;Fe^{4+}$ ions, the nonstoichiometric chemical formulas could be determined from the mole ratio of $Fe^{4+}$ ion and oxygen vacacies. According to the Mossbauer spectroscopic analysis, the presence of 5-coordinated $FeO_5$ was evidenced only in the barium compounds along with $FeO_6,\;and\;FeO_4$, but not in the strontium and calcium compounds. The samples with x = 0.25 and 0.50 show a spectrum of superparamagnetism, which might be due to the formation of a domain of the ferromagnetic interaction between the $Fe^{3+}\;and\;Fe^{4+}$ ions. The electrical conductivities of all samples are within semiconducting range. Since the $Fe^{4+}$ ion acts as an electron acceptor level during the electron transfer between the Fe through intermediate $O^{2-}$ ions, the activation energy of the compounds decreases with the increment of $Fe^{4+}$ content.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.4
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• pp.61-68
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• 2023

In this study, Sn-3.5Ag-15.0Fe composite solder was manufactured and applied to TLP bonding to change the entire joint into a Sn-Fe IMC(intermetallic compound), thereby applying it as a high-temperature solder. The FeSn₂ IMC formed during the bonding process has a high melting point of 513℃, so it can be stably applied to power modules for power semiconductors where the temperature rises up to 280℃ during use. As a result of applying ENIG surface treatment to both the chip and substrate, a multi-layer IMC structure of Ni₃Sn₄/FeSn₂/Ni₃Sn₄ was formed at the joint. During the shear test, the fracture path showed that cracks developed at the Ni₃Sn₄/FeSn₂ interface and then propagated into FeSn₂. After 2hours of the TLP joining process, a shear strength of over 30 MPa was obtained, and in particular, there was no decrease in strength at all even in a shear test at 200℃. The results of this study can be expected to lead to materials and processes that can be applied to power modules for electric vehicles, which are being actively researched recently.