• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1514-1516
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• 2003

NiCrFe 박막을 이용한 정밀급 박막 스트레인 게이지를 개발하였으며, 그 특성을 요약하면 다음과 같다. 스트레인한계: 5 % 이하, 저항: 350 ${\sim}$ 2,000 ${\Omega}$, 게이지 율: 2.1, 정도: 0.1 %, 피로한계 : $10^6$ at ${\pm}1500{\mu}{\varepsilon}$, 사용온도범위: $-75{\sim}150^{\circ}C$, 온도 출력: ${\pm}1{\mu}{\varepsilon}/^{\circ}C$, 게이지율변화 : +0.009%/$^{\circ}C$ 국산화된 박막 스트레인 게이지는 디지털 로드 셀 등에 적용할 수 있으며, 이 분야의 국내 기술력 향상에 이바지 할 것이다.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.938-944
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• 1997

Cu-Ni thin film strain gauges for diaphragm-type pressure sensors were developed. Thin films of Cu-Ni alloys of various compositions were deposited onto glass and stainless steel substrates by RF magnetron sputtering. The effects of composition substrate temperature Ar partial pressure and aging on the electrical properties of Cu-Ni film strain gauges in the thickness range 500~2000$\AA$ are discussed. The maximum resistivity(95.6 $\mu$$\Omega$cm) is obtained from 53wt%Cu-47wt%Ni films while the temperature coefficient of resistance(TCR) becomes minimum(25.6ppm/$^{\circ}C$). The gauge factor is about 1.9.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.34 no.4
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• pp.391-398
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• 2010

In this paper, we propose a sensor design by using a polysilicon strain gauge bonded to a metal diaphragm. The fabrication process of the thin polysilicon strain gauges having thicknesses of $50\;{\mu}m$ was established using conventional MEMS technologies; further, the technique of glass frit bonding of the polysilicon strain gauge to the stainless steel diaphragm was established. Performance of the polysilicon strain gauge bonded to the metal cantilever beam was evaluated. The gauge factor, temperature coefficient of resistance (TCR), nonlinearity, and hysteresis of the polysilicon strain gauge were measured. The results demonstrate that the resistance increases linearly with tensile stress, while it decreases with compressive stress. The value of the gauge factor, which represents the sensitivity of strain gauges, is 34.0; this value is about 7.15 times higher than the gauge factor of a metal-foil strain gauge. The resistance of the polysilicon strain gauge decreases linearly with an increase in the temperature, and TCR is $-328\;ppm/^{\circ}C$. Further, nonlinearity and hysteresis are 0.21 % FS and 0.17 % FS, respectively.

• Electrical & Electronic Materials
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• v.10 no.10
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• pp.1022-1028
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• 1997

In this paper we present the construction details and output characteristics of a diaphragm-type pressure sensor with Cu-Ni(53:47) thin-film strain gauges. In order to improve the sensitivity and the temperature compensation two circumferential gauges are placed near the center of the diaphragm and two radial gauges are located near the edge. For all the gauges the relative change in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output is found to be linear over the entire pressure range(0-30kfg/cm$^2$)and the output sensitivity obtained is 1.6mV/V. The maximum nonlinearity observed in output characteristics is 0.35%FS for 5V excitation and the hysteresis is less than 0.1%FS.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.578-583
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• 2017

This paper presents a 3D touch pad technology that uses force touch sensors as a next-generation method for mobile applications. 3D touch technology requires detecting the location and pressure of touches simultaneously, as well as multi-touch function. We used metal foil strain gauges for the touch recognition sensor and detected the weak touch signals using Wheatstone bridge circuit at each strain gauge sensor. We also developed a touch recognition system that amplifies touch signals, converts them to digital data through a microprocessor, and displays the data on a screen. In software, we designed a touch recognition algorithm with C code, which is capable of recognizing two-point touch and differentiating touch pressures. We carried out a successful experiment to display two touch signals on a screen with different forces and locations.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1564-1567
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• 1998

This paper presents a smart thin film pressure transducer which is highly suitable for a precise and remote measurement of pressure and has the following smart functions: automatic zero tracking, automatic span adjustment, temperature compensation, continuous self-diagnostics for faults(open strain gages, abnormal data, incorrect A/D conversion, and overpressure), data memory and multi-drop communication with PC.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.343-346
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• 1997

This paper presents the basic characteristics of Cr thin-film, which were deposited on glass by DC magnetron sputtering. The optimized deposition condition of Cr thin-film strain gauges were input power 7w/cm$^2$and the Ar working pressure was 9mtorr. GF(Gauge Factor), TCR(Temperature Coefficient of Resistance) and TCS(Temperature Coefficient of Sensitivity) of Cr thin-film strain gauges were 5.86, 400 ppm/$^{\circ}C$ and 0 ppm/$^{\circ}C$, respectively.

• Journal of the Korean Geotechnical Society
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• v.40 no.2
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• pp.115-123
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• 2024

Stress is an invisible physical quantity, necessitating the use of earth pressure cells for its measurement within theground. Traditional strain-gauge type earth pressure cells, due to their rigidity, can distribute stress within the ground and subsequently affect the accuracy of earth pressure measurements. In contrast, force sensing resistors are thin and flexible, enabling the minimization of stress disturbance when measuring stress within the ground. This study developed a system that utilizes force sensing resistors to measure ground stress. It involved constructing a soil chamber for calibrating the force sensing resistors, assessing the variability of measurements from resistors embedded in sand ground, and verifying the attachment of pucks to the sensing area of the resistors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.134-138
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• 2000

The physical, electrical and piezoresitive characteristics of CrN(chromiun nitride) thin-films on silicon substrates have been investigated for use as strain gauges. The thin-film depositions have been carried out by DC reactive magnetron sputtering in an argon-nitrogen atmosphere(Ar-(5~25 %)$N_2$). The deposited CrN thin-films with thickness of $3500{\AA}$nd annealing conditions($300^{\circ}C$, 48 hr) in Ar-10 % $N_2$ deposition atmosphere have been selected as the ideal piezoresistive material for the strain gauges. Under optimum conditions, the CrN thin-films for the strain gauges is obtained a high electrical resistivity, $\rho=1147.65\;{\mu}{\Omega}cm$, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal gauge factor, GF=11.17.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1540-1542
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• 1998

This paper presents the deposition and anneling characteristics of Cr thin film strain gaugs, which were deposited on glass by DC magnetron sputtring. The optimzed deposition conditions of Cr thin films were the input DC power, 7 W/$cm^2$ and the Ar vacuuming pressure, 9 mTorr, GF, TCR and TCS of Cr thin film strain gauges were 5.86, 400 ppm/$^{\circ}C$ and $\approx$0 ppm/$^{\circ}C$ respectively. The anneling conditions were investigated with the thinkness rang (1200 $\sim$ 3500$\AA$) of Cr thin films, anneling temperature (100 $\sim$ $300^{\circ}C$) and anneling time (24 $\sim$ 72hr). The maximum resistivity and the minimum TCR value were 1757.03 ${\mu}{\Omega}$cm, -194.07 ppm/$^{\circ}C$, respectively.