• Title/Summary/Keyword: 박막 밀도

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Effect of Dispersant Contents on the Dispersity of Conductive Carbon-black and Properties of Screen-printed Source-drain Electrodes for OTFTs (분산제 함량에 따른 전도성 카본블랙의 분산 특성 및 스크린 인쇄된 OTFTs용 소스-드레인 전극 물성)

  • Lee, Mi-Young;Bae, Kyung-Eun;Kim, Seong-Hyun;Lim, Sang-Chul;Nam, Su-Yong
    • Polymer(Korea)
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    • v.33 no.5
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    • pp.397-406
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    • 2009
  • We have fabricated source-drain electrodes for OTFTs using a screen-printing technique with carbon-black pastes as conductive paste. And effects of dispersants contents (SOP 10-40%) on the dispersity of carbon-black pastes and characteristics of screen-printed source-drain electrodes for OTFTs using two types of dispersants (DB-2150, DB-9077) were investigated. As contents of both dispersants were increased the dispersity of carbon-black mill-bases was improved, whereas the carbon-black pastes exhibited different dispersion characteristics. For the case of DB-2150, the dispersity of the pastes was improved with increasing dispersant content and the storage modulus G' in their rheology characteristics were reduced. But, for the DB-9077, the storage modulus G' of pastes were increased with dispersant content due to the flocculated network structure formed by interactions among carbon-black powders and dispersants. But, since this flocculated network structure of the pastes using DB-9077 resulted in the conduction path of carbon-black structures, the conductivities of screen-printed electrodes and mobilities of the OTFTs with them were better than those using pastes with DB-2150.

High-Speed Cu Filling into TSV and Non-PR Bumping for 3D Chip Packaging (3차원 실장용 TSV 고속 Cu 충전 및 Non-PR 범핑)

  • Hong, Sung-Chul;Kim, Won-Joong;Jung, Jae-Pil
    • Journal of the Microelectronics and Packaging Society
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    • v.18 no.4
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    • pp.49-53
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    • 2011
  • High-speed Cu filling into a through-silicon-via (TSV) and simplification of bumping process by electroplating for three dimensional stacking of Si dice were investigated. The TSV was prepared on a Si wafer by deep reactive ion etching, and $SiO_2$, Ti and Au layers were coated as functional layers on the via wall. In order to increase the filling rate of Cu into the via, a periodic-pulse-reverse wave current was applied to the Si chip during electroplating. In the bumping process, Sn-3.5Ag bumping was performed on the Cu plugs without lithography process. After electroplating, the cross sections of the vias and appearance of the bumps were observed by using a field emission scanning electron microscope. As a result, voids in the Cu-plugs were produced by via blocking around via opening and at the middle of the via when the vias were plated for 60 min at -9.66 $mA/cm^2$ and -7.71 $mA/cm^2$, respectively. The Cu plug with a void or a defect led to the production of imperfect Sn-Ag bump which was formed on the Cu-plug.

Improving Charge Injection Characteristics and Electrical Performances of Polymer Field-Effect Transistors by Selective Surface Energy Control of Electrode-Contacted Substrate (전극 접촉영역의 선택적 표면처리를 통한 유기박막트랜지스터 전하주입특성 및 소자 성능 향상에 대한 연구)

  • Choi, Giheon;Lee, Hwa Sung
    • Journal of Adhesion and Interface
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    • v.21 no.3
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    • pp.86-92
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    • 2020
  • We confirmed the effects on the device performances and the charge injection characteristics of organic field-effect transistor (OFET) by selectively differently controlling the surface energies on the contact region of the substrate where the source/drain electrodes are located and the channel region between the two electrodes. When the surface energies of the channel and contact regions were kept low and increased, respectively, the field-effect mobility of the OFET devices was 0.063 ㎠/V·s, the contact resistance was 132.2 kΩ·cm, and the subthreshold swing was 0.6 V/dec. They are the results of twice and 30 times improvements compared to the pristine FET device, respectively. As the results of analyzing the interfacial trap density according to the channel length, a major reason of the improved device performances could be anticipated that the pi-pi overlapping direction of polymer semiconductor molecules and the charge injection pathway from electrode is coincided by selective surface treatment in the contact region, which finally induces the decreases of the charge trap density in the polymer semiconducting film. The selective surface treatment method for the contact region between the electrode and the polymer semiconductor used in this study has the potential to maximize the electrical performances of organic electronics by being utilized with various existing processes to lower the interface resistance.

Linear Source for Evaporating Large Area CIGS Absorber Layer (대면적 CIGS 광흡수층 증착을 위한 선형증발원 개발)

  • Seo, J.H.;Jung, S.W.;Lee, W.S.;Choi, Y.S.;Choi, M.W.;Choi, J.C.;Jeong, K.H.
    • Journal of the Korean Vacuum Society
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    • v.22 no.1
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    • pp.1-6
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    • 2013
  • In this paper, to develop linear source for evaporating $600{\times}1,200mm$ size of large area CIGS absorber layer, we simulated linear thermal source and obtained ${\pm}5%$ thickness uniformity with various nozzle sizes and regular nozzle distance. Flux density was confirmed linear source length. Using this linear source, we tested thickness uniformity of Copper, Indium single layer which was obtained Cu ${\pm}5%$ and In ${\pm}5%$ thickness uniformity. And then CIGS absorber layers were evaporated with In-line single-stage co-evaporation. Large area CIGS absorber layers were confirmed composition uniformity of $$Cu{\leq_-}5%$$, $$In{\leq_-}7%$$, $$Ga{\leq_-}4%$$, $$Se{\leq_-}3%$$ with 600 mm width by XRF. Uniform shape of CIGS absorber layers was confirmed by SEM. XRD showed peaks which indicate chalcopyrite structure of CIGS absorber layers. Thus, developed linear source is suitable for evaporating CIGS absorber layer.

The Fabrication of Poly-Si Solar Cells for Low Cost Power Utillity (저가 지상전력을 위한 다결정 실리콘 태양전지 제작)

  • Kim, S.S.;Lim, D.G.;Shim, K.S.;Lee, J.H.;Kim, H.W.;Yi, J.
    • Solar Energy
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    • v.17 no.4
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    • pp.3-11
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    • 1997
  • Because grain boundaries in polycrystalline silicon act as potential barriers and recombination centers for the photo-generated charge carriers, these defects degrade conversion effiency of solar cell. To reduce these effects of grain boundaries, we investigated various influencing factors such as thermal treatment, various grid pattern, selective wet etching for grain boundaries, buried contact metallization along grain boundaries, grid on metallic thin film. Pretreatment above $900^{\circ}C$ in $N_2$ atmosphere, gettering by $POCl_3$ and Al treatment for back surface field contributed to obtain a high quality poly-Si. To prevent carrier losses at the grain boundaries, we carried out surface treatment using Schimmel etchant. This etchant delineated grain boundaries of $10{\mu}m$ depth as well as surface texturing effect. A metal AI diffusion into grain boundaries on rear side reduced back surface recombination effects at grain boundaries. A combination of fine grid with finger spacing of 0.4mm and buried electrode along grain boundaries improved short circuit current density of solar cell. A ultra-thin Chromium layer of 20nm with transmittance of 80% reduced series resistance. This paper focused on the grain boundary effect for terrestrial applications of solar cells with low cost, large area, and high efficiency.

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Photovoltaic Properties of MEH-PPV/DFPP Blend Devices Based on Novel n-type Polymer DFPP (새로운 n형 고분자인 DFPP 기반의 MEH-PPV/DFPP Blend 소자의 광전특성)

  • Kim, Su-Hyun;Moon, Ji-Sun;Lee, Jae-Woo;Lee, Seok;Kim, Sun-Ho;Byun, Young-Tae;Kim, Dong-Young;Lee, Chang-Jin;Kim, Eu-Gene;Chung, Young-Chul;Rie, Kung-Won
    • Korean Journal of Optics and Photonics
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    • v.17 no.5
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    • pp.461-468
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    • 2006
  • Optical characteristics in polymer films of MEH-PPV/DFPP blends were for the first time investigated. DFPP (N, N'-diperfluorophenyl-3,4,9,10-perylenetetracarboxylic diimide) used here was a novel n-type polymer, which had good stability in air and solubility in common solvents. For a 1:9 DFPP:MEH-PPV blend, highly efficient quenching of photoluminescence (PL) was observed. In addition, the photocurrent responses of these MEH-PPV/DFPP photovoltaic cells were measured. When the light intensity was $50mW/cm^2$, short-circuit photocurrent densities were two times higher than those of single layer MEH-PPV devices.

Effect of Short Circuit Current Enhancement in Solar Cell by Quantum Well Structure and Quantitative Analysis of Elements Using Secondary Ion Mass Spectrometry (양자우물구조에 의한 태양전지 단락전류 증가 효과와 이차이온 질량분석법에 의한 원소 정량 분석)

  • Kim, Junghwan
    • Applied Chemistry for Engineering
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    • v.30 no.4
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    • pp.499-503
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    • 2019
  • Characteristics of solar cells employing a lattice matched GaInP/GaAs quantum well (QW) structure in a single N-AlGaInP/p-InGaP heterojunction (HJ) were investigated and compared to those of solar cells without QW structure. The epitaxial layers were grown on a p-GaAs substrate with $6^{\circ}$ off the (100) plane toward the <111>A. The heterojunction of solar cell consisted of a 400 nm N-AlGaInP, a 590 nm p-GaInP and 14 periods of a 10 nm GaInP/5 nm GaAs for QW structure and a 800 nm p-GaInP for the HJ structure (control cell). The solar cells were characterized after the anti-reflection coating. The short-circuit current density for $1{\times}1mm^2$ area was $9.61mA/cm^2$ for the solar cell with QW structure while $7.06mA/cm^2$ for HJ control cells. Secondary ion mass spectrometry and external quantum efficiency results suggested that the significant enhancement of $J_{sc}$ and EQE was caused by the suppression of recombination by QW structure.

A Study on the Passive Vibration Control of Large Scale Solar Array with High Damping Yoke Structure (고댐핑 요크 구조 적용 대형 태양전지판의 수동형 제진에 관한 연구)

  • Park, Jae-Hyeon;Park, Yeon-Hyeok;Park, Sung-Woo;Kang, Soo-Jin;Oh, Hyun-Ung
    • Journal of Aerospace System Engineering
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    • v.16 no.5
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    • pp.1-7
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    • 2022
  • Recently, satellites equipped with high-performance electronics have required higher power consumption because of the advancement of satellite missions. For this reason, the size of the solar panel is gradually increasing to meet the required power budget. Increasing the size and weight of the solar panel is one of the factors that induce the elastic vibration of the flexible solar panel during the highly agile maneuvering of the satellite or the mode of vibration coupling to the satellite or the mode of vibration coupling to the micro-jitter from the on-board appendages. Previously, an additional damper system was applied to reduce the elastic vibration of the solar panel, but the increase in size and mass of system was inevitable. In this study, to overcome the abovementioned limitations, we proposed a high -damping yoke structure consisting of a superplastic SMA(Shape Memory Alloy) laminating a thin FR4 layer with viscoelastic tape on both sides. Therefore, this advantage contributes to system simplicity by reducing vibrations with small volume and mass without additional system. The effectiveness of the proposed superelastic SMA multilayer solar panel yoke was validated through free vibration testing and temperature testing using a solar panel dummy.

Comparison of the Mid-term Changes at the Remnant Distal Aorta after Aortic Arch Replacement or Ascending Aortic Replacement for Treating Type A Aortic Dissection (A형 급성대동맥박리증에서 대동맥궁치환술과 상행대동맥치환술 후 잔존 원위부 대동맥의 변화에 대한 중기 관찰 비교)

  • Cho, Kwang-Jo;Woo, Jong-Su;Bang, Jung-Hee;Choi, Pill-Jo
    • Journal of Chest Surgery
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    • v.40 no.6 s.275
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    • pp.414-419
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    • 2007
  • Background: Replacing the ascending aorta is a standard surgical option for treating acute type A aortic dissection. But replacing the aortic arch has recently been reported as an acceptable procedure for this disease. We compared the effects of aortic arch replacement for treating acute type A aortic dissection with the effects of ascending aortic replacement. Material and Method: From 2002 to 2006, 25 patients undewent surgical treatment for acute type A aortic dissection, 12 patients undewent ascending aortic replacement and 13 patients underwent aortic arch replacement. Among the aortic arch group, an additional distal stent-graft was inserted during the operation in 5 patients. 19 patients (11 arch replaced patients and 8 ascending aortic replaced patients) were followed up at the out patient clinic for an average of $756{\pm}373$ days. All the patients undewent CT scanning and we analyzed their distal aortic segments. Result: 4 patients who underwent ascending aortic replacement died, so the overall mortality rate was 16%. Among the 11 long term followed-up arch replacement patients, 2 patients (18.1 %) developed distal aortic dilatation and one of them underwent thoracoabdominal aortic replacement later on. However, among the 8 the ascending aortic replaced patients, 5 patients (62.5%) developed distal aortic dilatation. Conclusion: Aortic arch replacement is one of the safe options for treating acute type A aortic dissection. Aortic arch replacement for treating acute type A aortic dissection could contribute to a reduced distal aortic dilatation rate and fewer secondary aortic procedures.

Surgical Results for Treating Postpneumonectomy Empyema with BPF by Using an Omental Pedicled Flap and Thoracoplasty (전폐절제술 후 기관지 흉막루를 동반한 농흉에서 유경성 대망 이식편과 흉곽성형술을 이용한 수술적 치료에 대한 임상 고찰)

  • Jeong, Seong-Cheol;Kim, Mi-Jung;Song, Chang-Min;Kim, Woo-Shik;Shin, Yong-Chul;Kim, Byung-Yul
    • Journal of Chest Surgery
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    • v.40 no.6 s.275
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    • pp.420-427
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    • 2007
  • Background: Postpneumonectomy empyema (PPE) due to bronchopleural fistula (BPF) can be a surgical challenge for surgeons. We analyzed the follow-up outcomes after performing omentopexy and thoracoplasty for the treatment of PPE with BPF after pneumonectomy. Material and Mehod: Between December 1991 and January 2006, 9 patients underwent BPF closure using an omental pedicled flap for the treatment of PPE with BPF after pneumonectomy. There were 7 males and 2 females (mean age: $45.9{\pm}9$ years). The patients were followed up for a mean of 58 months (median: 28 months, range: $6{\sim}169$). When we performed omentopexy, the surgical procedures for empyema were thoracoplasy for 8 patients and the Clagett procedure for 1 patient. Thoracoplasty was performed for the latter patient due to recurrence of empyema, Result: For the 8 patients who were treated by omentopexy and thoracoplasty, there was 1 operation-related death due to sepsis. During follow up, 1 patient, who was treated by omentopexy and a Clagett procedure, died of acute hepatitis 40 months postoperatively. The early mortality was 11.1% (8/9). Of the 8 patients, including the 1 late death patient, successful closure of the BPF were achieved in all patients (8/9) and the empyema was cured in 7 patients (7/8). Conclusion: The BPF closure using an omental pedicled flap was an effective method for treating PPE with BPF due to 75-destroyed lung, and thoracoplasty with simultaneous omentopexy was effective and safe for removing dead space if the patient was young and in a good general condition.