• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.6
• /
• pp.23-29
• /
• 1989

A physical model that characterizes the field effect of the polycrystalline thin film transistor(TFT) is developed. The model discribes grains as discrete single crystal transistors and grain boundaries as insulated layers having the potential barrier, Thus TFT is considered as serial connection of single crystal transistors and insulators. In the model, the currents in the grain and the grain boundary is calculated using gradual channel approximation and tunneling theory, respetively. By comparing computed I-V characteristics with measured I-V characteristics of CdSe TFT's, potential and electric field distributions in the channel are observed and the validity of the conduction model proposed in this paper is confirmed.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.16 no.2
• /
• pp.248-258
• /
• 1992

Three-dimensional rigid-plastic finite element formulation based on the membrane theory was described and a computer program for large deformation analysis was developed. In the formulation, normal and planar anisotropy of sheet material and rotation of the principal axes of anisotropy was taken into consideration. Sheet metal was assumed to be rigid-plastic material obeying Hill's quadratic yield criterion and its associated flow rule. Deep drawing process, as a preliminary test, for normal anisotropic material was analyzed in order to examine the validity of developed finite element program. The results were consistent with the existing finite element solutions or experimental data. The present study was mainly concerned with the influence of planar anisotropy on deformation behaviour. Finite element analysis and experiment were carried out for the whole process of deep drawing of planar anisotropic material. The computational and experimental results on the shape of ear, strain distribution and punch load were in good agreement.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.3
• /
• pp.193-199
• /
• 2000

As an energetic focused-ion beam(FIB) is irradiated on an inorganic amorphous thin film a majority of ions without a reflection at surface, is randomly collided with constituent atoms in thin film. but their distribution exhibits generally a systematic form of distribution. In our previous paper we reported the concentration distribution and the transmission per unit depth of Ga$^{+}$ ions penetrated int a-Se$_{75}$ /Ge$_{25}$ thin film using the LSS-based calculation. In this paper these simulated results are compared with those obtained by a conventional profile code(ISC) and a practical SIMS profile. Then the results of LSS-based calculation have only a small difference with those of code and SIMS Especially. in the case of Ga$^{+}$-FIB with an accelerating energy of 15keV. the depth of the maximum ion concentration is coincident with each other in an error range of $\pm$5$\AA$.EX>.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.420-420
• /
• 2010

AC PDP에서 유전체 보호막으로 사용되는 MgO 박막은 높은 이차전자방출계수($\gamma$)로 인해 방전전압을 낮춰주는 중요한 역할을 하고 있다. 이러한 MgO 보호막의 이차전자방출계수를 증가시키기 위해 MgO 의 Energy Band Structure 규명이 중요한 연구 주제가 되고 있다. MgO의 이차전자방출계수($\gamma$)는 Auger 중화 이론에 의해 방출 메커니즘이 설명이 되고, 그 원리는 다음과 같다. 고유의 이온화 에너지를 가진 이온이 MgO 표면에 입사 되면, Tunneling Effect에 의해 전자와 이온 사이에 중화가 일어나고, 중화가 되고 남은 에너지가 MgO Valance Band 내의 전자에게 전달되면 이때 남은 에너지(${\Delta}E$)가 MgO의 일함수(Work function) 보다 크게 되면 이차전자로 방출된다. 본 실험 에서는 $\gamma$-FIB System을 이용하여 결정 방향이 (100), (110), (111)을 갖는 Single Crystal MgO에 이온화 에너지가 24.58eV인 He Ion source를 주사 하였을 때 Auger self-convolution을 통해 이차전자의 운동 에너지 분포를 구하고, 이를 통해 MgO 내의 Energy Band Structure를 실험적으로 측정하였다. 이를 통해 MgO Single Crystal의 일함수 및 Defect Level의 분포를 확인하였다.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.14 no.4
• /
• pp.645-650
• /
• 2019

In this paper, a specifically designed waveguide structure that can carry first, and second-order orbital angular momentum(: OAM) mode is proposed. The proposed optical waveguide consists of three Si stripes embedded in $SiO_2$, which is suitable for implementing on-chip integration and fabrication by standard thin film deposition and etching processes. The second-order OAM mode was generated by combining two eigenmodes, which are calculated by finite difference method(: FDM). The topological charge number of the first, and second-order OAM mode was calculated as l=0.9642 and 1.8766 respectively, which is close to the theoretical value.

• Transactions of the Korean Society of Mechanical Engineers B
• /
• v.35 no.5
• /
• pp.481-486
• /
• 2011

It is important to predict the behavior of a liquid film around a rotating cylinder in the film coating process of the steel industry. When the cylinder rotates, the behavior of the liquid film on the rotating cylinder surface is influenced by the cylinder diameter, the rotation speed, the gravitational force, and the fluid properties. These parameters determine the liquid film thickness and the rise of the film on the cylinder surface. In the present study, the two-phase interfacial flow of the liquid film on the rotating cylinder were numerically investigated by using a VOF method. For various rotation speeds, cylinder diameters and fluid viscosities, the behavior of liquid film on the rotating cylinder were predicted. Thicker film around the rotating cylinder was observed with an increase in the rotation speed, cylinder diameter, and fluid viscosity. The present results for the film thickness agreed well with available experimental and analytical results.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.423-423
• /
• 2013

3~5 족 반도체 물질인 phosphorus 화합물 중 대표적인 InAlP 삼종화합물은 작은 굴절률, 큰 밴드갭, GaAs와 lattice 일치 때문에 큰 주목을 받고 있고, p-type high electron mobility transistors(p-HEMT), laser diodes 등의 고속 전자소자 및 광전 소자에 응용이 가능한 매우 중요한 물질이다. 최적의 소자 응용기술을 위해서는, 정확한 광물성 연구가 수행되어야 하지만 InxAl1-xP 화합물에 대한 유전율 함수 및 전자전이점 등의 연구는 미흡한 실정이다. 이에 본 연구에서는 1.5~6.0 eV 에너지 영역에서 각기 다른 In 조성비를 갖는 InxAl1-xP 화합물의 가유전율 함수 ${\varepsilon}={\varepsilon}_1+i{\varepsilon}_2$와 전자전이점 데이터를 보고한다. GaAs 기판 위에 molecular beam epitaxy (MBE)를 이용하여 InxAl1-xP (x=0.000, 0.186, 0.310, 0.475, 0.715, 0.831, 1.000) 박막을 성장하였고 타원편광분석기를 이용하여 유전율 함수를 측정하였다. 또한 실시간 화학적 에칭을 통하여 시료 표면에 자연산화막을 제거함으로써 순수한 InAlP의 유전율 함수를 측정할 수 있었고, 측정된 유전율 함수를 이차미분하여 In 조성비에 따른 전자전이점을 얻을 수 있었다. 얻어진 전자전이점 값을 이용하여 linear augmented Slater-type orbital method (LASTO) 를 통해 이론적 전자 밴드 구조 계산을 하였고, 이를 바탕으로 $E_0$, $E_1$, $E_2$ 전이점 지역의 여러 전자전이점($E_1$, $E_1+{\Delta}_1$, $E_0'$, $E_0'+{\Delta}_0'$, $E_2$, $E_2'$)의 특성을 정의할 수 있었고, $E_0'$과 $E_2$ 전이점의 에너지 값이 In 조성비가 증가함에 따라 서로 교차함을 발견할 수 있었다. 타원 편광 분석법을 이용한 유전율 함수 및 전자전이점 연구는 InAlP의 광학적 데이터베이스를 확보하는 성과와 더불어 새로운 디바이스 기술 및 광통신 산업에도 유용한 정보가 될 것이다.

• Journal of the Korean Vacuum Society
• /
• v.17 no.4
• /
• pp.311-316
• /
• 2008

Since the presence of the chemical impurities and defect at surfaces and interfaces greatly influence the properties of various semiconductor devices, an unambiguous chemical characterization of the metal and semiconductor surfaces become more important in the view of the miniaturization of the devices toward nano scale. Among the various conventional surface characterization tools, Electron-induced Auger Electron Spectroscopy (EAES), X-ray Photoelectron Spectroscopy (XPS) and Secondary Electron Ion Mass Spectroscopy (SIMS) are being used for the identification of the surface chemical impurities. Recently, a novel surface characterizaion technique, Positron-annihilation induced Auger Electron Spectroscopy (PAES) is introduced to provide a unique method for the analysis of the elemental composition of the top-most atomic layer. In PAES, monoenergetic positron of a few eV are implanted to the surface under study and these positrons become thermalized near the surface. A fraction of the thermalized positron trapped at the surface state annihilate with the neighboring core-level electrons, creating core-hole excitations, which initiate the Auger process with the emission of Auger electrons almost simultaneously with the emission of annihilating gamma-rays. The energy of electrons is generally determined by employing ExB energy selector, which shows a poor resolution of $6{\sim}10eV$. In this paper, time-of-flight system is employed to measure the electrons energy with an enhanced energy resolution. The experimental result is compared with simulation results in the case of both linear (with retarding tube) and reflected TOF systems.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.15 no.1
• /
• pp.107-119
• /
• 1991

This dissertation analyzes the running mechanism of flexible and thin tape above rotating head through the experiment. The scope of study is confined to measure the vertical deformation of running tape under hydrodynamic pressure invoking phenomena of elasto-hydrodynamic lubrication between the protruded bump on a rotating cylinder ad the running tape. Experimental system is devised to measure the vertical deflection of the running tape by opto-electronical displacement gauge, which enables to detect microscopic surface deflection of high frequency. Thorough the tests of small specimens of groove and bump, the accuracy and reliability of this experimental method is confirmed and achieved an accuracy within 5%(2.mu.m) error for the microscopic deflection with high frequency. In experimental works, the effects of bump size on flying characteristics of the tape were evaluated and examined. For the vertical deformation of the running tape. the numerical results and its trend agree qualitatively with the experimental ones.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.10 no.3
• /
• pp.343-348
• /
• 1986

An optical interference method was developed for measuring rapidly growing and evaporating liquid condensate films (e.g., Na$_{2}$SO$_{4}$, $K_{2}$SO$_{4}$) on solid surface exposed to flowing combustion product gases at film thicknesses well below the onset of complications due to run-off. To develop this optical system, this study investigated the optical parameters (e.g., polarization state, incident angle, target roughness, etc.) Trends for the Na$_{2}$SO$_{4}$(l) and $K_{2}$SO$_{4}$(l) deposition rates as a function of target temperature using this optical measuring system agree with the theoretical prediction of the vapor deposition. This study was able to extend the experimental range for vapor plus condensed phase transport and deposition. While previously unable to measure the evaporation rates interferometrically, these rates are estimated from the results of the investigation of polarization states.