• Journal of the Korean Vacuum Society
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• v.14 no.1
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• pp.29-34
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• 2005

The degradation of the SiGe hetero-junction bipolar transistor(HBT) properties in SiGe BiCMOS process was investigated in this paper. The SiGe HBT prepaired by SiGe BiCMOS process, unlike the conventional one, showed the degraded DC characteristics such as the decreased Early voltage, the decreased collector-emitter breakdown voltage, and the highly increased base leakage current. Also, the cutoff frequency(f/sub T/) and the maximum oscillation frequency(f/sub max/) representing the AC characteristics are reduced to below 50%. These deteriorations are originated from the change of the locations of emitter-base and collector-base junctions, which is induced by the variation of the doping profile of boron in the SiGe base due to the high-temperature source-drain annealing. In the result, the junctions pushed out of SiGe region caused the parastic barrier formation and the current gain decrease on the SiGe HBT device.

• Journal of Practical Agriculture & Fisheries Research
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• v.20 no.2
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• pp.31-38
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• 2018

This study was conducted to investigate the possibility of biochar as an alternative medium to peatmoss using for Aster spathulifolius. We cultivated A. spathulifolius in four potting media with different mixing rates (v/v) of peatmoss (P) and biochar (B) as follows: B0+P3, B1+P2, B2+P1, and B3+P0 with vermiculite 3 + perlite 3. Also, we analyzed the chemical properties of media and the plant growth characteristics. The results were as follows: In case of media's chemical condition, B0+P3 and B1+P2 treatments showed higher tendency (p < 0.05). Plant height on B0+P3 and B1+P2 treatments was much higher than that on other treatments (p < 0.05). Root length on B1+P2 treatment was higher than on B0+P3 treatment (p < 0.05). B0+P3 and B1+P2 treatments showed higher number of leaves and dry biomass than other treatments. Therefore, our results support that Biochar : Peatmoss : Vermiculite : Perlite (1/3 : 2/3 : 1 : 1, v/v) could be a more economical potting medium for A. spathulifolius than peatmoss : vermiculite : perlite (1 : 1 : 1, v/v).

• Electrical & Electronic Materials
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• v.8 no.2
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• pp.237-241
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• 1995

반도체 사업의 영역을 어떻게 분류하느냐에 따라 다르겠으나, 우리나라가 메모리 분야에서는 세계의 선진회사와 어깨를 나란히 한다는 점에서 메모리분야와 비메모리분야를 분류해 보고, 특히 비메모리분야의 기술동향과 이 분야에서의 우리나라 반도체 업체들의 사업전개 방향에 대해 방향을 제시해 보고자 한다. 메모리는 국내업체가 세계시장의 30%이상을 공급하고 있고, 256메가디램등 메모리분야에서 최첨단 제품의 개발이 속속 발표되고 있다. 반면에 그의 반도체 (비메모리분야)의 경우는 세계시장의 수 퍼센트도 공급하지 못하는 실정으로 반도체의 75% 가량을 차지하는 이 시장의 진입을 위해 장단기 계획을 수립하여 적극적으로 추진해야 할 것이다. 이 논문에서는 반도체 기술의 현재 상황을 국내외로 비교검토하고 우리나라와 기업의 발전방향을 제시해 보고자 한다.