• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.1
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• pp.78-85
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• 1986

This study has been made to investigate Behavior of the fatigue crack propagation for the purpose of taking into consideration the fatigue behavior Which initiate and propagate in tip of defect of the defected specimens, Which Contain the micro-hole or micro-slit. Especially, the specimens have been conducted with high-freguency heat treatment of 850.deg. C, 1050.deg. C to consider strength elevation of defected specimens. The results of this study are as follow; (1) The case of the same in the length of crack, the fatigue crack propagation rate of the micro-slit is always faster than that of micre-hole. But, the first step of the fatigue crack propagation it is not always so. (2) Fatigue crack propagation rate of specimens with micro-slit or micro-hole which have been treated with high-frequency heat treatment satisfy the following formula between the fatigue crack propagation rate and nominal stress; dl/dN .var..sigma.$^{m}$ *l$^{n}$ .

• The Journal of Engineering Geology
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• v.16 no.2 s.48
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• pp.179-187
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• 2006

Two specimens of mortar containing artificial slit and Geochang granite containing the straight notch were selected to be used in this research. Source mechanism of micro-crack by radiation pattern based on dislocation the-ory was estimated by the first motion of longitudinal wave and spatial distribution between the location of transducers for monitoring acoustic emission and source coordinates determined by the application of the least square method. Result of analysis showed that the orientation of dislocation surfaces due to shear dislocation and tensile dislocation squares considerably with crack direction visually observed. The ultimate goal of this study is to provide fundamental information for source mechanism of micro-crack within materials.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.1
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• pp.129-137
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• 2000

In this paper, a new method of noncontact measurement has been developed for a 3 dimensional topography in semiconductor wafer, implementing a new optical probe based on the precision defocus measurement. The developed technique consists of the new optical probe, precision stages, and the measurement/control system. The basic principle of the technique is to use the reflected slit beam from the specimen surface, and to measure the deviation of the specimen surface. The defocusing distance can be measured by the reflected slit beam, where the defocused image is measured by the proposed optical probe, giving very high resolution. The distance measuring formula has been proposed for the developed probe, using the laws of geometric optics. The precision calibration technique has been applied, giving about 10 nanometer resolution and 72 nanometer of four sigma uncertainty. In order to quantitize the micro pattern in the specimen surface, some efficient analysis algorithms have been developed to analyse the 3D topography pattern and some parameters of the surface. The developed system has been successfully applied to measure the wafer surface, demonstrating the line scanning feature and excellent 3 dimensional measurement capability.