• Journal of IKEEE
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• v.27 no.4
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• pp.386-390
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• 2023

In this study, we examined the quasi-nonvolatile memory characteristics of silicon nanosheet (SiNS) feedback field-effect transistors (FBFETs) fabricated using a complementary metal-oxide-semiconductor process. The SiNS channel layers fabricated by photoresist overexposure method had a width of approximately 180 nm and a height of 70 nm. The SiNS FBFETs operated in a positive feedback loop mechanism and exhibited an extremely low subthreshold swing of 1.1 mV/dec and a high ON/OFF current ratio of 2.4×10⁷. Moreover, SiNS FBFETs represented long retention time of 50 seconds, indicating the quasi-nonvolatile memory characteristics.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.05a
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• pp.527-528
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• 2017

Current-voltage characteristics of source-overlapped gate tunnel field-effect transistor (SOG-TFET) with different channel doping concentration are proposed. Due to the gaussian doping in which the channel region near the source is highly doped and that far from the source is lightly doped, the ambipolar current was reduced, compared with the uniformly-doped SOG-TFET. On-current is almost similar in P-P-N and P-I-N structure but subthreshold swing (SS) of P-P-N TFET enhanced 5 times higher than those of P-I-N TFET. off-current and ambiploar current of the proposed SOG-TFET decrease 10 times and 100 times than those of the uniformly-doped SOG-TFET.

• Journal of IKEEE
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• v.21 no.3
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• pp.284-287
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• 2017

In this study, we examined the simulated electrical characteristics of single-gated feedback field effect transistors (FBFETs) and the influence of channel length variation of the memory window characteristics through the 3D device simulation. The simulations were carried out for various channel lengths from 50 nm to 100 nm. The FBFETs exhibited zero SS(< 1 mV/dec) and a current $I_{on}/I_{off}$ ratio${\sim}1.27{\times}10^{10}$. In addition, the memory windows were 0.31 V for 50 nm-channel-length devices while no memory windows were observed for 100 nm-channel-length devices.