• Title/Summary/Keyword: 모듈전압

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A Study on Output Enhancement Method of PV Array Using Electrical Circuit Reconfiguration Algorithm (전기적 회로절체 알고리즘에 의한 태양광 어레이의 출력향상 방안에 관한 연구)

  • Kim, Byung-Mok;Lee, Hu-Dong;Tae, Dong-Hyun;Rho, Dae-Seok
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.21 no.8
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    • pp.9-17
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    • 2020
  • Recently, RES (renewable energy source) projects have been spreading all over the world as an alternative to solve the shortage of energy and environmental problems caused by fossil fuel consumption. The Korean government also supported the policy and demonstration project to increase the proportion of renewable energy to 63.8[GW] until 2030, which is 20[%] of the total power generation. On the other hand, output loss of a PV array can occur when the surrounding high-rise buildings and trees shade a PV array. Therefore, this paper proposes an algorithm to improve the output loss of a PV array, which electrically changes a circuit configuration of PV modules by wiring and switching devices. Furthermore, this study modeled a PV system based on PSIM S/W, which was composed of a PV array, a circuit configuration device, and a grid-connected inverter. From the simulations results with the modeling and test device, the existing method showed no output when 50% of the shade occurs in PV modules. In contrast, the proposed method could produce the output because the voltage in the PV module could be restored to 246[V], and the operation efficiency of the PV system could be improved by the operation algorithm of the circuit configuration device.

A Fundamental Study for Design of Electric Energy Harvesting Device using PZT on the Road (도로용 압전발전체 시험모듈 설계를 위한 기초 실험 연구)

  • Lee, Jae-Jun;Ryu, Seung-Ki;Moon, Hak-Yong;Kwon, Soo-Ahn
    • International Journal of Highway Engineering
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    • v.13 no.4
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    • pp.159-166
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    • 2011
  • Green house gas emissions are increasing as development of the industrial economy of the international community. Many countries in the world are endeavoring to reduce green house gas emissions under severe climate change. In order to protect grobal warming, government is trying to reduce green gas emissions under "Low Carbon Green Growth Policy" and investing climiate-firendly industries such as renewable energy harvesting. Renewable energy has been rapidly developing as a result of investment for development technology of using natural energy such as solar, wind, tidal, etc. There are lots of waste energy in the road space. However, nobody is not interested in waste energy from the road space. This paper present a fundamentally experimental study of energy harvesting technique to use waste energy in the road. The waste energy in the road is covered a pressure and impact of vehicles on the road, the radiant heat from asphalt pavement, road noise and vibration etc. In this study, an energy harvesting device using piezoelectric element is proposed and various tests are conducted to investigate a characteristic of this device as function of impact loading based on piezoelectric effect behavior. This paper shows the energy harvesting results of the device using domestic piezoelectirc element as a function of impact load size and pavement types.

Development of Smart Multi-function Ground Resistivity Measuring Device using Arduino in Wind Farm (풍력 발전단지내 아두이노를 활용한 스마트 다기능 대지 고유 저항 측정 장치 개발)

  • Kim, Hong-Yong;Yoon, Dong-Gi;Shin, Seung-Jung
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.19 no.6
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    • pp.65-71
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    • 2019
  • Conventional methods of measuring ground resistance and ground resistance field measurement are used to measure voltage drop according to the resistance value of the site by applying current by installing a constant interval of measurement electrode. If the stratified structure of the site site is unique, errors in boundary conditions will occur in the event of back acid and the analysis of the critical ground resistance in the ground design will show much difference from simulation. This study utilizes the Arduino module and smart ground measurement technology in the convergent information and communication environment to develop a reliable smart land resistance measuring device even if the top layer of land is unique, to analyze the land resistance and accumulate data to predict the change in the age of the land. Considering the topographical characteristics of the site, we propose a ground resistance measuring device and its method of measuring ground resistance so that the auxiliary electrode can be installed by correctly positioning the angle and distance in measuring ground resistance. Not only is ground resistance value obtained through electrodes installed to allow accurate ground resistance values to be selected, but it can also be used as a useful material for installing electrical facilities in similar areas. Moreover, by utilizing reliable data and analyzing the large sections of the site, a precise analysis of the site, which is important in ground design as well as construction cost, is expected to be used much in ground facility design such as potential rise.

A Design of Wide-Range Digitally Controlled Oscillator with an Active Inductor (능동 인덕터를 이용한 광대역 디지털 제어 발진기의 설계)

  • Pu, Young-Gun;Park, An-Soo;Park, Hyung-Gu;Park, Joon-Sung;Lee, Kang-Yoon
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.48 no.3
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    • pp.34-41
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    • 2011
  • This paper presents a wide tuning range, fine-resolution DCO (Digitally Controlled Oscillator) with an active inductor. In order to control the frequency of the DCO, the transconductance of the active inductor is tuned digitally. In addition, the DCO gain needs to be calibrated digitally to compensate for gain variations. To cover the wide tuning range, an automatic three-step coarse tuning scheme is proposed. The DCO total frequency tuning range is 1.4 GHz (2.1 GHz to 3.5 GHz), it is 58 % at 2.4 GHz. An effective frequency resolution is 0.14 kHz/LSB. The proposed DCO is implemented in 0.13 ${\mu}m$ CMOS process. The total power consumption is 6.6 mW from a 1.2 V supply voltage. The phase noise of the DCO output at 2.4 GHz is -120.67 dBc/Hz at 1 MHz offset.

Implementation of Multiple-Valued Adder and Multiplier Using Current-Mode CMOS (전류모드 CMOS에 의한 다치 가산기 및 승산기의 구현)

  • Seong, Hyeon-Kyeong
    • The KIPS Transactions:PartA
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    • v.11A no.2
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    • pp.115-122
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    • 2004
  • In this paper, the multiple-valued adders and multipliers are implemented by current-mode CMOS. First, we implement the 3-valued T-gate and the 4-valued T-gate using current-mode CMOS which have an effective availability of integrated circuit design. Second we implement the circuits to be realized 2-variable 3-valued addition table and multiplication table over finite fields $GF(3^2)$, and 2-variable 4-valued addition table and multiplication table over finite fields $GF(4^2)$ with the multiple-valued T-gates. Finally, these operation circuits are simulated under $1.5\mutextrm{m}$ CMOS standard technology, $15\mutextrm{A}$ unit current, and 3.3V VDD voltage Spice. The simulation results have shown the satisfying current characteristics. The 3-valued adder and multiplier, and the 4-valued adder and multiplier implemented by current-mode CMOS is simple and regular for wire routing and possesses the property of modularity with cell array. Also, since it is expansible for the addition and multiplication of two polynomials in the finite field with very large m, it is suitable for VLSI implementation.

A Charge Pump Design with Internal Pumping Capacitor for TFT-LCD Driver IC (내장형 펌핑 커패시터를 사용한 TFT-LCD 구동 IC용 전하펌프 설계)

  • Lim, Gyu-Ho;Song, Sung-Young;Park, Jeong-Hun;Li, Long-Zhen;Lee, Cheon-Hyo;Lee, Tae-Yeong;Cho, Gyu-Sam;Park, Mu-Hun;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.10
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    • pp.1899-1909
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    • 2007
  • A cross-coupled charge pump with internal pumping capacitor, witch is advantages from a point of minimizing TFT-LCD driver IC module, is newly proposed in this paper. By using a NMOS and a PMOS diode connected to boosting node from VIN node, the pumping node is precharged to the same value each pumping node at start pumping operation. Since the lust-stage charge pump is designed differently from the other stage pumps, a back current of pumped charge from charge pumping node to input stage is prevented. As a pumping clock driver is located the font side of pumping capacitor, the driving capacity is improved by reducing a voltage drop of the pumping clock line from parasitic resistor. Finally, a layout area is decreased more compared with conventional cross-coupled charge pump by using a stack-MIM capacitors. A proposed charge pump for TFT-LCD driver IC is designed with $0.13{\mu}m$ triple-well DDI process, fabricated, and tested.

A study on process optimization of diffusion process for realization of high voltage power devices (고전압 전력반도체 소자 구현을 위한 확산 공정 최적화에 대한 연구)

  • Kim, Bong-Hwan;Kim, Duck-Youl;Lee, Haeng-Ja;Choi, Gyu-Cheol;Chang, Sang-Mok
    • Clean Technology
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    • v.28 no.3
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    • pp.227-231
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    • 2022
  • The demand for high-voltage power devices is rising in various industries, but especially in the transportation industry due to autonomous driving and electric vehicles. IGBT module parts of 3.3 kV or more are used in the power propulsion control device of electric vehicles, and the procurement of these parts for new construction and maintenance is increasing every year. In addition, research to optimize high-voltage IGBT parts is urgently required to overcome their very high technology entry barrier. For the development of high-voltage IGBT devices over 3.3 kV, the resistivity range setting of the wafer and the optimal conditions for major unit processes are important variables. Among the manufacturing processes to secure the optimal junction depth, the optimization of the diffusion process, which is one step of the unit process, was examined. In the diffusion process, the type of gas injected, the injection time, and the injection temperature are the main variables. In this study, the range of wafer resistance (Ω cm) was set for the development of high voltage IGBT devices through unit process simulation. Additionally, the well drive in (WDR) condition optimization of the diffusion process according to temperature was studied. The junction depth was 7.4 to7.5 ㎛ for a ring pattern width of 23.5 to25.87 ㎛, which can be optimized for supporting 3.3 kV high voltage power devices.

Lightning Protection System of Solar Power Generation Device (태양광발전장치의 낙뢰보호 시스템)

  • Yongho Yoon
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.23 no.2
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    • pp.157-162
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    • 2023
  • Among the failures of photovoltaic power generation facilities, failures caused by surges account for 20% of the total failure rate, and energy emissions of tens to hundreds [A] during power generation and electrical damage to inverters and connection boards lead to electrical safety accidents. In particular, in the case of lightning, an abnormal voltage is induced in an electric circuit to destroy insulation, and the current flowing at this time causes a fire and acts as a factor that accelerates the deterioration of parts. Due to this action, the problem of electrical safety of solar power generation devices spreading from outside the city center to the inside of the city center such as houses, apartments, and government offices is emerging. Since lightning strikes cause both field-based and conducted electrical interference, this effect increases with increasing cable length or conductor loops. In addition, surge damages not only solar modules, inverters and monitoring devices, but also building facilities, which can eventually cause operational shutdown due to fire of the photovoltaic power generation system and consequent financial loss. Therefore, in this paper, a lightning protection system for solar power generation devices is studied for the purpose of reducing property damage and human casualties due to the increase in fire and electrical safety accidents caused by lightning strikes in photovoltaic power generation systems.

A Design of Ultra-low Noise LDO Regulator for Low Voltage MEMS Microphones (저전압 MEMS 마이크로폰용 초저잡음 LDO 레귤레이터 설계)

  • Moon, Jong-il;Nam, Chul;Yoo, Sang-sun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2021.10a
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    • pp.630-633
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    • 2021
  • Microphones can convert received voice signals to electric signals. They have been widely used in various industries such as radios, smart devices and vehicles. Recently, the demands for small size and high sensitive microphones are increased according to the minimization of wireless earphone with the development of smart phone. A MEMS system is a good candidate for an ultra-small size microphone of a next generation and a read out IC for high sensitive MEMS sensor is researched from many industries and academies. Since the microphone system has a high sensitivity from environment noise and electric system noise, the system requires a low noise power supply and some low noise design techniques. In this paper, a low noise LDO is presented for small size MEMS microphone systems. The input supply voltage of the LDO is 1.5-3.6V, and the output voltage is 1.3V. Then, it can support to 5mA in the light load condition. The integrated output noise of proposed LDO form 20Hz to 20kHz is about 1.9uV. These post layout simulation results are performed with TSMC 0.18um CMOS technology and the size of layout is 325㎛ × 165㎛.

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Electro chemical characteristics of $(MnX)O_2$ electrode prepared by thermal decomposition method (열분해법으로 제조된 $(MnX)O_2$ 전극의 전기화학적 특성)

  • Kim, Hyun-Sik;Lee, Hae-Yon;Huh, Jeoung-Sub;Kim, Jong-Ryung;Lee, Dong-Yoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.348-351
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    • 2003
  • 산소 과전압이 낮은 $MnO_2$를 촉매로 사용하여 반도체 산화물계의 산소선택성 전극을 제조하고 산화물 coating층의 미세구조와 전기화학적 특성을 분석하였다. Ti 기판에 열분해 법을 이용하여 $MnO_2$ 피막을 형성하였고, 또한 PVDF : $MnO_2$의 함량비를 1 : 1에서 1 : 40까지 정량적으로 변화시키고 DMF의 함량을 각각의 고정된 PVDF : $MnO_2$의 함량비에서 변화시켜 Pb전극에 1.5 mm/sec의 속도로 5회 dipping하여 $MnO_2$ 피막층을 형성 하였다. $450^{\circ}C$에서 1시간 열분해하여 약 $1\;{\mu}m$$MnO_2$ 피막층이 형성되었으나 Ti 기판과의 접착력이 약하여 피막자체에 대한 전기화학적 특성을 관찰할 수 없었다. PVDF : DMF = 4 : 96인 경우 pb 전극의 피막층이 얇기 때문에 박리현상이 일어났으며 이는 산화물 용제의 낮은 점도 때문인 것으로 판단된다. 또한 PVDF : DMF = 10 : 90의 경우는 5회 dipping 하여 약 $150\;{\mu}m$의 피막층을 형성하였다. PVDF : $MnO_2$의 함량비가 1:1에서 1:6 까지는 DMF의 함량에 무관하게 전극 특성이 나타나지 않았지만 $MnO_2$의 양이 상대적으로 증가하면 cycle이 증가하더라도 거의 일정한 전류 값을 갖고 $MnO_2$와 PVDF의 비가 20:1 이상의 조성에서는 균일한 CV 특성을 나타냈다. 이는 $MnO_2$가 효과적으로 촉매 작용을 한 것으로 판단되며 anodic polarization에 의한 산소 발생 과전압도 약 1.4V 정도로 감소되었다.동등한 MSIL 코드를 생성하도록 시스템을 컴파일러 기법을 이용하여 모듈별로 구성하였다.적용하였다.n rate compared with conventional face recognition algorithms. 아니라 실내에서도 발생하고 있었다. 정량한 8개 화합물 각각과 총 휘발성 유기화합물의 스피어만 상관계수는 벤젠을 제외하고는 모두 유의하였다. 이중 톨루엔과 크실렌은 총 휘발성 유기화합물과 좋은 상관성 (톨루엔 0.76, 크실렌, 0.87)을 나타내었다. 이 연구는 톨루엔과 크실렌이 총 휘발성 유기화합물의 좋은 지표를 사용될 있고, 톨루엔, 에틸벤젠, 크실렌 등 많은 휘발성 유기화합물의 발생원은 실외뿐 아니라 실내에도 있음을 나타내고 있다.>10)의 $[^{18}F]F_2$를 얻었다. 결론: $^{18}O(p,n)^{18}F$ 핵반응을 이용하여 친전자성 방사성동위원소 $[^{18}F]F_2$를 생산하였다. 표적 챔버는 알루미늄으로 제작하였으며 본 연구에서 연구된 $[^{18}F]F_2$가스는 친핵성 치환반응으로 방사성동위원소를 도입하기 어려운 다양한 방사성의 약품개발에 유용하게 이용될 수 있을 것이다.었으나 움직임 보정 후 영상을 이용하여 비교한 경우, 결합능 변화가 선조체 영역에서 국한되어 나타나며 그 유의성이 움직임 보정 전에 비하여 낮음을 알 수 있었다. 결론: 뇌활성화 과제 수행시에 동반되는 피험자의 머리 움직임에 의하여 도파민 유리가 과대평가되었으며 이는 이 연구에서 제안한 영상정합을 이용한 움직임 보정기법에 의해서 개선되었다. 답이 없는 문제, 문제 만들기, 일반화가 가능한 문제 등으로 보고, 수학적 창의성 중 특히 확산적 사고에 초점을 맞추어 개방형 문제가 확산적 사고의 요소인 유창성, 독창성, 유연성 등에 각각 어떤 영향을 미치는지 20주의 프로그램을 개발, 진행하여 그 효과를 검증하고자

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