• Title/Summary/Keyword: 막저항

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Filtration Characteristics of Membrane-coupled Fermentor System for Dissolved Organics Recovery From Liquid Organic Sludge (액상유기성슬러지로부터 용존유기물의 회수를 위한 막결합형 발효 시스템의 여과 특성)

  • Jong Oh Kim
    • Membrane Journal
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    • v.13 no.2
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    • pp.65-72
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    • 2003
  • This study was focused on the investigation of filtration characteristics of membrane-coupled fermentor system for dissolved organics recovery from liquid organic sludge. On the filterability of MF over the range of $0.1{\sim}5 {\mu}m,$ the magnitude of total membrane resistance ($R_t$) is ranged as follows in the order; $0.1 {\mu}m>0.2{\mu}m>0.5 >1{\mu}m>2{\mu}m>5{\mu}m$. The cake layer resistance ($R_c$) occupied about 68~88% of total resistance with fermented sludge. Permeation flux decline was mainly attributed to the $R_c$, which was formed by a strong deposition from physico-chemical interactions of solids on membrane surface. Higher suspended solids (SS) concentration of suspension caused lower permeation flux. However, there was not a proportion relation beyond a certain SS concentration. The cross-flow velocity on the membrane surface was faster, which resulted in the higher permeation flux and also more efficient with low trans membrane pressure (TMP) in viewpoint of energy efficiency. The appropriate pH of suspension was over the range of 5.0~6.0 for dissolved organics recovery as well as the permeation flux. It is possible f3r bacteria to be separated perfectly with $0.1{\mu}m\; and \;0.2{\mu}m$ membrane pore size. Based on experimental results, most appropriate membrane pore size for the recovery is believed to around $1{\mu}m$.

Effects of Buffer Layer and Annealing Temperature on Magnetororesistance in Co/Cu Multilayers (기저층 및 열처리 효과가 Co/ Cu 다층박막의 자기저항에 미치는 영향)

  • 김미양;최규리;최수정;송은영;이장로;황도근;이상석;박창만;이기암
    • Journal of the Korean Magnetics Society
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    • v.7 no.2
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    • pp.82-89
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    • 1997
  • Dependence of magnetoresistance on the thickness of Cu, type and thickness of buffer layer, and the stacking number of multilayer in the form buffer /$[Co(17{\AA}/Cu(t{\AA})]_{20}$ were investigated. To evaluate effect of annealing on this samples, X-ray diffraction analysis, vibrating sample magnetometer analysis, and magnetoresistance measurement (4-probe method) were performed. The magnetoresistance ratio exhibits a maximum of 21% for the multilayer with Cu thickness of 24$\AA$ and Fe buffer layer thickness of 50$\AA$. Deposition of film under low base pressure induces in increase magnetoresistance ratio by preventing oxidation. The multilayer annealed below 30$0^{\circ}C$ temperature allowed larger textured grain without loss in the periodicity. Magnetoresistance ratios of the multilayer with Cu thickness of 24$\AA$ and 36$\AA$ were increased due to the increase in the antiferromagnetically coupled fraction after annealing.

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AgNW를 활용한 유연 투명히터 적용 연구

  • An, Won-Min;Jeong, Seong-Hun;Kim, Do-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.133.1-133.1
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    • 2016
  • 투명히터는 자동차유리 및 헤드램프의 성에 제거, 건축의 단열 및 난방, 의료용, 군사용 등 다양하게 사용되어지고 있으며, 더 나아가 플렉서블하고 웨어러블한 투명히터가 연구되고 있다. 투명히터에 사용되고 있는 대표적 투명전극인 Indium Tin Oxide (ITO)는 높은 투과도와 낮은 면저항을 가지지만 유연성이 좋지 않아 유연한 투명히터에 적용하기에는 어려움이 있다. 이를 해결하기 위해서 ITO를 대체할 수 있는 CNT, Graphene, AgNW, 전도성 고분자 등의 투명전극에 관한 연구가 활발히 진행되고 있다. 그러나 CNT, Grapene, 전도성 고분자는 여전히 전기적 특성이 좋지 못하기 때문에 차세대 투명전극으로 사용되기는 어려움이 있다. 반면에 AgNW는 용액공정으로 제조 단가가 비교적 저렴하며, 높은 전기전도 특성을 가지는 투명전극이다. AgNW는 나노와이어가 네트워크를 형성하고 있어 높은 전도성과 광 투과도를 가지지만 $200^{\circ}C$ 이상의 온도에서 손상된다. 이를 해결하기 위해 AgNW전극에 금속 산화막을 형성하여 내열성을 향상시키고자 하였다. 그러나 기존의 Reactive Sputter 방식으로 금속 산화막을 형성하게 되면 산소 분위기에서 AgNW가 산화되기 때문에 본 연구에서는 AgNW위에 금속 박막을 증착하고 Ion Beam 처리를 통해서 금속 산화막을 형성하여 AgNW 전극과 유사한 투과도와 저항을 가지면서 $300^{\circ}C$ 까지 열적 안정성을 확보하여 내열성을 향상시켰다. 유연한 PES기판 위에 스핀 코팅 방법으로 AgNW를 코팅하였고, Magnetron Sputter로 금속 박막을 형성한 후 Ion Beam 처리를 통해 금속 산화막을 형성하였다. 이를 적용하여 투명히터를 제작한 결과 유연 기판상 투명히터로 활용이 가능함을 확인하였다.

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Electrical and optical properties of ZnO:Al thin films prepared by microwave magnetron sputtering (마이크로웨이브 magnetron sputtering법으로 제막된 ZnO:Al 박막의 전기광학적 특성)

  • 유병석;오근호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.4
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    • pp.587-591
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    • 1998
  • AZO transparent conducting thin film were fabricated by DC magnetron sputtering using the Zn: Al (2% aluminu contained ) alloy target with inducing microwave to the plasma, and the effect of microwave was studied. The optical transmittance, the resistivity and dynamic deposition rate at the applied voltage to target of 420 V was 50~70%, $ 5.5{\times}10^{-3}{\Omega}$cm and 6,000 $\AA\textrm{mm}^2$/J, respectively. After annealing AZO coated glass at $400^{\circ}C$ for 30 minutes, the light transmittance was increased to 80% and electrical conductivity was also increased two times, reached to resistivity of $2.0{\times}10^{-3}{\Omega}$cm.

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Study on Plasma Treatment of electrode for CCFL (CCFL 전극의 플라즈마 처리에 관한 연구)

  • Park, Hyun-Sik
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.3
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    • pp.1308-1312
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    • 2011
  • CCFL(Cold Cathode Fluorescent Lamp)for BLU of LCD and special lighting has been widely utilized. The removal of oxide film formed on electrode of CCFL in manufacturing process is required. In this pape Plasma treatment was carried out to remove the oxide film. To ensure the optimum process, the analysis of sheet resistance, XRD, AFM and solder test was conducted. A minimum sheet resistance and the maximum percentage of the solder coverage ratio were measured in optimal process conditions such as plasma power consumption 600W and processing time of 70 seconds. As the plasma treatment is confirmed to be due to removal of copper oxide, this process is expected to be used as a treatment of electrode for CCFL.

Electrical and optical properties of ZnO:Al transparent conductive films with thermal treatments (ZnO:Al 투명도전막의 열처리에 따른 전기적 및 광학적 특성)

  • Ma, Tae Young;Park, Ki Cheol
    • Journal of IKEEE
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    • v.24 no.2
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    • pp.435-440
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    • 2020
  • ZnO:Al films with about 500 nm thick were prepared by RF magnetron sputtering. The ZnO:Al films were annealed at 100 ℃, 200 ℃, 300 ℃, and 400 ℃ for 10 h, respectively. The resistivity, carrier concentration, and mobility variation of ZnO:Al films with heat treatments were measured. The causes of the resistivity variation of ZnO:Al films with heat treatments were investigated by utilizing the results of x-ray diffraction and field emission scanning electron microscope. The energy band gap, Urbach energy, and refractive index were obtained from the transmittance of ZnO:Al films. The change in electrical properties of the ZnO:Al film was explained in relation to the optical properties.

Permeation Behavior of Microfiltration Membrane by Alumina Colloidal Suspension under a Cyclic Variation in TMP (운전압력의 순환변화에 따른 알루미나 현탁액의 정밀여과 투과거동)

  • Nam, Suk-Tae;Han, Myeong-Jin
    • Membrane Journal
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    • v.21 no.1
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    • pp.13-21
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    • 2011
  • This study investigated the fouling behavior of $Al_2O_3$ colloids on polyethylene microfiltration membrane. To examine the effect of operation variation on fouling, operating pressure was increased from 0.49 to 1.96 bar along with time elapses and then was reduced to 0.49 bar reversely. A hysteresis behavior was observed in the membrane permeate flux over pressure, revealing different fluxes at the same pressure according to the pressure control type, increasing and decreasing. Permeate resistance and its rate of increase was higher in the decreasing pressure cycle than in the increasing pressure cycle. At the initial period of filtration, fouling mechanism for the both cycles was governed by the cake filtration. The degree of fouling was higher in the decreasing pressure cycle compared with in the increasing pressure cycle.

Effect of WSi$_2$ Gate Electrode on Thin Oxide Properties in MOS Device (MOS 소자에서 WSi$_2$ 게이트 전극이 Thin Oxide 성질에 미치는 영향)

  • 박진성;이현우;김갑식;문종하;이은구
    • Journal of the Korean Ceramic Society
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    • v.35 no.3
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    • pp.259-263
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    • 1998
  • WSi2/CVD-Si/SiO2/Si-substrate의 폴리사이드 구조에서 실리콘 증착 POCl3 확산 그리고 WSi2 증착 유무에 따른 Thin oxide 특성을 연구했다 WSi2 막을 증착하지 않은 CVD-Si/SiO2/Si-substrate 구조에서 CVD-Si을 po-lycrystalline-Si으로 증착한 시편이 amorphous-Si을 증착한 시편보다 산화막 불량이 적다 WSi2 를 증착시킨 WSi2/CVD-Si/SiO2./Si-substrate의 구조에서 CVD-Si의 polycrystalline-Si 혹든 amorphous-Si 의 막 증착에 따른 thin oxide의 불량율 차이는 미미하다 산화막 불량은 CVD-Si에 확산시킨 인(P) 증가 즉 면저항(sheet resistance) 감소로 증가한다. Thin oxide의 절연특성은 WSi2 증착으로 저하된다 WSi2 증착으로 산화막 두께는 증가하나 막 특성은 열등해져 산화막 절연성이 떨어진다.

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막 : 수처리 공정의 새로운 전환

  • Lee, Jeong-Hak;Park, Byeong-Gyu
    • 한국상하수도협회지
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    • s.4
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    • pp.60-65
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    • 2003
  • 최근 우리나라에서 수처리(음용수, 오폐수 포함)분야에서 막분리 공정에 대한 관심도가 비등하고 있다. 신기술의 등장은 기존 기술의 보완내지는 대체를 통하여 자동화, 경제성, 처리수질, 제어방식 등에서 큰 변화를 줄것임에 틀림이 없다. 그러나 모든 신기술이 다 그러하지만 막분리기술도 그 정체를 바로알고 현명하게 채택 활용해야지 과도한 기대감이나 불필요한 저항감에서 신기술의 장점을 살리지 못하면 큰 손실이 아닐 수 없다. 본 난에서는 독자들의 수처리용 막분리기술에 대한 이해를 돕기 위하여 앞으로 3회에 걸쳐 1회: 막과 막분리 공정의 기본 설명, 2회: 막과 정수처리, 3회 막과 오/폐수처리의 순으로 연재할 것이다. 독자들의 이해를 돕기위하여 평이한 용어와 문장을 쓰려고 노력하였으며 3회의 연재가 이 기술의 정체를 파악하는데 도움이 되길 기대한다.

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Effect of operating condition of electro-coagulation on the membrane filtration resistances of activated sludge (전기응집 조건이 활성슬러지 막 여과 저항에 미치는 영향)

  • Hong, Sung-Jun;Chang, In-Soung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.16 no.3
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    • pp.2314-2320
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    • 2015
  • MBR (Membrane Bio-Reactor) process is known to consume enormous energy to control membrane fouling. To solve this problem, electro-coagulation technique has been applied to MBR. A series of electro-coagulation was applied to activated sludge suspension under different current density condition. After the electro-coagulations, membrane filtration of the activated sludge suspensions was conducted to investigate the effect of electro-coagulation on the fouling. As current density increased 10 to 40A/m2, the total fouling resistance (Rc+Rf) decreased from 18 to 79%, showing that the electro-coagulation improved the membrane filtration efficiency. Both the organic concentration in bulk and the particles size distribution were not nearly changed before and after the electro-coagulation. The enhanced filtration efficiency might be due to the aluminum hydroxide generated from chemical precipitation, which can be acted as a dynamic membrane preventing a deposition of foulants on membrane surfaces.