• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.3
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• pp.223-226
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• 2004

Injection molding using plastic materials was expected to mass production of structure with nano pattern for low cost phase. The PDMS mold was produced easily and uniformly by using thermal embossing. Quartz master for embossing method was made using electron beam lithography it had 100-500 nm size of line and dot type. The PDMS mold was produced after a brief hardening process and the master removal. The results show that various patterns are successfully fabricated the nano scale.. The replicated mold would be useful a stamper fabrication for injection molding.

• Laser Solutions
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• v.14 no.2
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• pp.13-16
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• 2011

We fabricated the Fresnel zone plate using femtosecond laser lithography-assisted micro-machining, which is a combined process of nonlinear lithography and wet etching. We investigated the focusing properties by launching a 632.8nm wavelength He-Ne laser beam into the zone plate. The spot size of the primary focal point was $27{\mu}m$ and the intensity of focal point was 0.565W/$cm^2$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.05a
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• pp.14-14
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• 2004

전자 공학 분야의 발전으로 인해 작은 구조물을 제작할 수 있는 리소그라피 (lithography) 기술이 급속하게 발전하고 있으며, 보다 작은 구조물에 대한 수요도 빠르게 증가하고 있다. 지난 수십 년간 반도체 분야에 적용 되어온 Moore's law에 의하면, 수년 내에 수십 나노 미터 크기의 특성 길이 (Critical Dimension)를 지닌 구조물을 이용하여 소자가 제작될 것 이 예견되고 있다. 반도체 공정을 응용하여 작은 구조물을 제작하는 기술은, 전자 공학 분야뿐만 아니라 광전자공학(optoelectronics) 분야, 양자 계산(quantum computing) 분야, 양자 계산(quantum computing) 분야, MEMS/NEMS, 바이오 센서(biosensor)분야 등에 다양한 응용성을 가질 것으로 예상된다.(중략)

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.4
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• pp.1059-1065
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• 1998

It is very crucial to make the phase holograms have the exact phase difference in the fabrication process. We have developed a fabrication criterion of obtaining the exact phase difference of the holograms by using the relation between the zeroth order intensity of diffected beam and the relative phsse difference of the fabricaated holograms. We have fabricated holograms having phaes of .pi. and .pi./2, respectively, and we could get multi-phase holograms by combining these two binary thase holograms.

• Journal of the Semiconductor & Display Technology
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• v.15 no.3
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• pp.1-5
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• 2016

In order to apply sub-resolution assist feature (SRAF) in extreme ultraviolet lithography, the maximum non-printing SRAF width and lithography process margin needs to be improved. Through simulation, we confirmed that the maximum SRAF width of 6% attenuated phase shift mask (PSM) is large compared to conventional binary intensity mask. The increase in SRAF width is due to dark region's reflectivity of PSM which consequently improves the process window. Furthermore, the critical dimension error caused by variation of SRAF width and center position is reduced by lower change in diffraction amplitude. Therefore, we speculate that the margin of SRAF application will be improved by using PSM.

• Korean Journal of Optics and Photonics
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• v.6 no.3
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• pp.239-244
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• 1995

내부 전반사 홀로그램을 이용하여 마스크의 미세 패턴을 기록, 재생 결상하였다. 직각 프리즘과 쐐기 살 다발 가르개, 반사경을 이용하여 광학계를 구성하였으며 TIR 홀로그램의 특성을 조사하였다. 본 실험에서는 5mW의 출력과 633nm의 파장을 가진 He-Ne 레이저를 이용하여 Agfa 8E75 홀로그램 건판에 TIR 홀로그램을 기록하고 기준파의 복소 공액파인 재생파로써 홀로그램을 재생하였다. 홀로그램 건판과 마스크와의 간격을 $200\mu$m로 유지했을 때 약 $3\mu$m의 분해능을 가진 재생상을 얻었으며 $70\mu$W의 기록 광으로써 홀로그램을 기록하여 0.45%의 에돌이 효율을 얻었다. 본 실험을 통하여 렌즈를 쓰지 않는 TIR 홀로그래피의 평판 표시 소자 리소그라피 기술에 응용 가능성을 알아 보았다.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1459-1460
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• 2006

A new gas jet Z-pinch EUV light source having double gas jet electrodes has been developed. It has two nozzles and two diffusers. The EUV beam is collected from the side of pinch plasma, generated in between the inner nozzle and corresponding diffuser. A cylindrical shell of He gas curtain produced by the outer nozzle is specially designed for shielding the debris and suppressing the inner gas expansion. We have succeeded in generating EUV energy of 1.22 mJ/sr/2%BW/pulse at 13.5nm. The estimated dimension of EUV source is to be FWHM diameter of 0.07 mm and length of 0.34 mm, and FW 1/e2 diameter of 0.15 mm and length of 1.2 mm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.303-303
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• 2007

Photo-imageable thick-film lithography technology was developed for the fabrication of embedded passives such as inductors and capacitors. In this study, photo-imageable dielectric and conductor pastes have apoted a negative type. Sodalime glass wafer, alumina substrate and zero-shrinkage LTCC green tapes were used as substrates. In result, The lithographic patterns were designed as lines and spaces for conductor material, or via-holes for ceramic, LTCC, materials. The scattering and reflection of UV-beam on the substrate had negative effects on fine patterning. The patterning performance was varied with the exposing and developing process conditions, and also varied with the substrate materials. Fine resolution of less then $50/50{\mu}m$ in line and space was obtained, which is difficult in screen printing method.

• Journal of the Korean Vacuum Society
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• v.12 no.4
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• pp.288-292
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• 2003

The fabrication of silicon nano-master with pillar structures using E-beam lithography and ICP etching was investigated for application of 2-dimensional polymer photonic crystal waveguides with air hole structures. Pillar structures with square, hexagon, dodecagon and circle were successfully fabricated. The diameters and structures of fabricated pillars were measured by CD-SEM and SPM-AFM. It was found that the optimal dose for complete circle pillar structures was 432 $\mu$C/$\textrm{cm}^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.62-62
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• 2010

근래 실리콘 나노선을 이용한 FET타입의 바이오 센서로의 응용 연구가 활발하다. 본 연구에서는 top-down 방식으로 제작한 실리콘 나노선의 전자수송 특성을 측정 분석하여 실리콘 나노선의 기하학적 변수에 따른 수송 변수를 추출하였다. 두께가 40 nm인 SOI wafer로부터 출발하여 일반적인 포토리소그라피와 건식식각 공정을 통하여 선폭이 100-300 nm 그리고 길이가 2-20 mm인 실리콘 나노선을 제작하고 resistance 및 transconductance를 측정하여 전하농도와 이동도의 선폭에 대한 의존도를 얻었다. 이를 바탕으로 bare surface, OH-activated surface, APTES-treated surface등 실리콘 표면상태에 따른 표면전하의 시간에 대한 진화과정을 모니터 할 수 있었으며, 또한 PBS 용액상태에서 pH를 변화시킴에 따른 전하수송 특성곡선의 변화를 연구하였다.