• Journal of the Korea institute for structural maintenance and inspection
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• v.28 no.2
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• pp.17-26
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• 2024

In recent times, accidents involving structural elements, formwork, and shore have been persistently occurring during concrete pouring, especially in multi-story reinforced concrete (RC) structures. In previous studies, research on construction load analysis was mainly conducted for cases where the thickness of all slabs is constant. However, when the thickness of some slabs is different, the variation in the stiffness of slab cross-sections can lead to different distributions of construction loads, necessitating further investigation. In this study, the slab thickness was set as a variable, and the analysis of the distribution of construction loads was conducted, taking into account the influence of changes in slab thickness on the concrete stiffness and structure. It was confirmed that not only the concrete material stiffness but also the slab cross-section stiffness should be considered in the estimation of construction loads when the slab thickness changes. As the slab thickness increases, the maximum construction load and maximum damage parameter on the layer with increased thickness significantly increase, and it was observed that a thicker slab results in a higher proportion of construction load.

• Journal of Korean Association for Spatial Structures
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• v.5 no.4 s.18
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• pp.53-59
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• 2005

This paper provides the results of the investigation on the optimum thickness distribution of plate structures with different essential boundary conditions. In this study, the strain energy to be minimized is considered as the objective function and the initial volume of structures is used as the constraint function. The computer-aided geometric design (CAGD) such as Coon's patch representation is used to represent the thickness distribution of plates. A reliable degenerated shell finite element is adopted to calculate the accurate strain energy level of the plates. Robust optimization algorithms provided in the optimizer DOT are adopted to search the optimum thickness values during the optimization iteration. Finally, the square plate is used to find out the optimum thickness distribution of plates according to different essential boundary condition.

• Proceedings of the Korean Information Science Society Conference
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• 2001.10b
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• pp.466-468
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• 2001

의료 영상 처리 기술은 질병의 진단 및 치료를 위한 계획이나 방법을 결정하는데 있어 매우 중요한 역할을 하고 있으며 의료 영상 시스템과 같은 활용 분야에서는 질병이 있는 환자의 자동 진단을 위한 연구도 활발하게 이루어지고 있다. 여기서는 뇌 MR영상에서의 질병을 자동 진단할 수 있는 방법에 관한 연구를 한다. 뇌 MR영상에서의 질병 진단을 위한 단계로서 필수적으로 이루어져야 하는 단계가 비정상 영역의 추출 단계이다. 이 논문에서는 뇌의 질병 진단에 사용할 수 있는 자료를 제공하기 위한 전처리 단계로서 질병이 있는 환자의 뇌 영상에서 비정상적인 영역 추출 방법을 제안한다. 일반적으로 비정상적인 영역의 명암간 분포는 회백질 영역의 분포와 유사하나 두께 차이로서 구분이 가능하다. 여기서는 이 정보를 활용하여 정상인의 뇌영상에 대해서 회백질의 평균 두께 분포를 구하여 테스트로 입력되어지는 영상에서 회백질의 평균 두께 이상의 영역만을 남김으로서 질병이 있는 환자의 뇌 영상에서 비정상적인 영역을 추출할 수 있음을 보인다. 또한 추출되어진 비정상 영역에 대해서 진단에 필요한 인자를 자동으로 측정하였고 뇌경색, 뇌종양 환자를 포함한 63명의 뇌 MR 영상 시리즈에 대해서 실험하여 비교적 정확한 추출결과를 유도할 수 있었음을 확인하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.10
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• pp.2217-2222
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• 2011

In this paper, the relationship of potential and charge distribution in channel for double gate(DG) MOSFET has been derived from Poisson's equation using Gaussian function. The relationship of subthreshold swing and oxide thickness has been investigated according to variables of doping distribution using Gaussian function, i.e. projected range and standard projected deviation, The analytical potential distribution model has been derived from Poisson's equation, and subthreshold swing has been obtained from this model for the change of oxide thickness. The subthreshold swing has been defined as the derivative of gate voltage to drain current and is theoretically minimum of 60 mS/dec, and very important factor in digital application. Those results of this potential model are compared with those of numerical simulation to verify this model. As a result, since potential model presented in this paper is good agreement with numerical model, the relationship of subthreshold swing and oxide thickness have been analyzed according to the shape of doping distribution.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.38 no.8
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• pp.899-904
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• 2014

Thickness profiled blank is designed using optimization techniques for maximizing the bulged heights during the free bulging of Inconel 718. The thickness of the blank was described by the Bezier curve and the locations of the control points were used as the design variables for optimization. The maximization of the bulged heights within the limited strain range served as the objective function and constraints for optimization. The equivalent static loads method for non-linear static response structural optimization (ESLSO) was used and the result of the optimization revealed 22 increased bulged heights. A free bulging test using a blank with an optimized profile was conducted to verify the optimization process. The results were compared with those of numerical analysis in terms of bulged height and deformed shape.

• Fire Science and Engineering
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• v.30 no.2
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• pp.62-67
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• 2016

In this study, the optical depth is analyzed with the effects of droplet size distribution of the water curtain nozzle to attenuate the radiative heat transfer. The HELOS/VARIO equipment is used for the measurement of the droplet size distributions. The spray characteristics are quantified by the investigation of Deirmenjian's modified gamma distribution function. The distribution constant of the nozzle can be obtained as ${\alpha}=1$ and ${\gamma}=5.2$. The generalized equation of the optical depth related with the droplet size distribution is introduced. These results will be applicable to the analysis of the design condition of the water curtain nozzle.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.05a
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• pp.829-831
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널길이와 채널두께의 비에 따른 문턱전압 및 전도중심의 변화를 분석하고자한다. 비대칭 이중게이트 MOSFET는 상하단 게이트 전압에 의하여 전류흐름을 제어할 수 있어 단채널효과를 감소시킬 수 있다는 장점이 있다. 그러나 채널길이가 감소하면 필연적으로 발생하는 문턱전압의 급격한 변화는 소자 특성에 커다란 영향을 미치고 있다. 특히 상하단의 게이트 전압, 상하단의 게이트 산화막 두께 그리고 도핑분포변화에 따라 발생하는 전도중심의 변화는 문턱전압을 결정하는 중요 요소가 된다. 해석학적으로 문턱전압 및 전도중심을 분석하기 위하여 해석학적 전위분포를 포아송방정식을 통하여 유도하였다. 다양한 채널길이 및 채널두께에 대하여 전도중심과 문턱전압을 계산한 결과, 채널길이와 채널두께의 비 등 구조적 파라미터뿐만이 아니라 도핑분포 및 게이트 전압 등에 따라 전도중심과 문턱전압은 크게 변화한다는 것을 알 수 있었다.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.230-230
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• 2014

디지털 홀로그램 이미징 장치를 이용하여 박막과 웨이퍼 간의 두께 및 하전입자의 분포를 모니터링하는 센서의 성능을 보고한다. 이 센서는 웨이퍼와 SiN 박막 간의 경계를 구분하였으며, 경계에서의 하전입자의 분포의 분석도 가능함을 보였다. 이 센서는 다양한 종류의 계면 내지 박막 내부의 하전입자의 분포의 측정을 가능하게 하며, 또한 두께 변이의 실시간 측정도 가능하게 하여 향후 대량 생산현장에서의 광범위한 응용이 예상된다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2621-2626
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as doping distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.691-694
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as charge distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.