• Title/Summary/Keyword: 도전성 PET필름

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Synthesis of ITO Nano-Particles by a SAS Method and Preparation of Conductive Film by Coating Them (SAS법을 이용한 ITO 나노입자의 합성과 ITO 도포에 의한 도전필름의 제조)

  • Kim, Moon-Sun;Yun, Sang-Ho;Kim, Byung-Woo
    • Clean Technology
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    • v.13 no.3
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    • pp.180-187
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    • 2007
  • The indium tin oxide(ITO) film on PET was prepared by a wet coating method to obtain the transparent film with a high conductance. ITO nano-particles was synthesized by a SAS method at 15 MPa and $50^{\circ}C$, where optimized rate of In/Sn was 65. Average diameter and resistivity of ITO obtained from SAS are $15{\pm}2\;nm$ and $4{\times}10^4\;{\Omega}{\cdot}cm$. Coating solution was prepared at pH 10. The ITO film was obtained by solution including 0.1 0.5, 1, and 2 ITO wt% on PET. Roughness(Ra) of ITO film with 0.1, 0.5, 1. and 2 ITO wt% is 4, 10, 12, and 16 nm. Resistivity with an increasing ITO concentration is $3.7{\times}10^6,\;2.4{\times}10^6,\;8{\times}10^5,\;and\;2{\times}10^5\;{\Omega}{\cdot}cm$. Transmissivity of ITO film decreased as 89, 88, 86, and 82% with an increasing ITO concentration as 0.1, 0.5, 1, and 2 wt%.

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Synthesis of ITO Nano-Particles by SAS Method and Preparation for Conductive PET Film with Multi-Layers (SAS법을 이용한 ITO 나노입자의 합성과 적층 도포된 PET 도전필름의 제조)

  • Yun, Sang-Ho;Kim, Moon-Sun;Lee, Hee-Dai;Kim, Chul Kyung
    • Applied Chemistry for Engineering
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    • v.19 no.1
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    • pp.37-44
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    • 2008
  • The multi-layer PET film of ITO/ATO was prepared by a wet coating method to obtain the transparent film with a high conductance at low cost. ITO nano-particles were synthesized by a SAS method at 15 MPa and $50^{\circ}C$, where optimized rate of In/Sn was 65. Average diameter and resistivity of ITO obtained from SAS are $15{\pm}2nm$ and $4{\times}10^4{\Omega}{\cdot}cm$. Coating solution was prepared at pH 10. Roughness (Ra), resistivity, and transmissivity of ATO film on PET are 9 nm, $5.5{\times}10^6{\Omega}{\cdot}cm$, and 91%. The multi-layered film of ITO/ATO was obtained by solution including 0.1, 0.5, 1.0, and 2.0 ITO wt% on ATO layer. Roughness (Ra) of multi-layered film with 0.1, 0.5, 1.0, and 2.0 ITO wt% is 4, 10, 12, and 16 nm, respectively. Corresponding resistivity with an increasing ITO concentration is $3.7{\times}10^6$, $2.4{\times}10^6$, $8{\times}10^5$, and $2{\times}10^5{\Omega}{\cdot}cm$. Transmissivity of ITO/ATO film decreases as 89, 88, 86, and 82% with an increasing ITO concentration as 0.1, 0.5, 1.0, and 2.0 wt%.