• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.68-70
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• 2015

The four-port coupler circuit consists of input port, isolation port and two output ports. When it inserts a signal at the input port and the isolation port, the magnitude and phase of the output signal at two output ports are decided by the magnitude and phase of the input signal. This paper analyzes the output signal characteristic of two output ports due to the input signal magnitude and phase of two input ports using the typical 4-port coupler circuit, Branchline hybrid coupler and Ring-hybrid coupler. And, it studies about new way to use branchline hybrid coupler and ring-hybrid coupler on the basis of the this information.

• Proceedings of the KIEE Conference
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• 2007.04b
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• pp.88-90
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• 2007

본 논문에서는 배선용 차단기 단자와 전선간의 접속결함에 의한 아크발생 및 화재위험성을 분석하였다. 실험 및 분석에 사용된 배선용 차단기는 단상 2선식의 국내외 제품으로 외형분석결과 단자구조는 제품마다 상이하였으며, 단자와 전선간의 접촉저항 측정결과 국내 제품은 접속방식에 따라 접촉저항의 편차가 컸다. 배선용 차단기 단자와 전선간 접속결함에 의한 접촉불량 발생시 단자구조에 따른 아크 및 화염의 특성 실험의 부하조건으로는 저항부하를 사용하였으며, 가진기의 축에 배선용차단기를 설치하여 진동에 의한 영향을 받도록 하였다. 인가시간은 10[분]으로 하였으며, 접촉불량이 진전됨에 따라 배선용 차단기 단자에 아크가 지속적으로 발생하였다. 대략 수분이 경과한 후 차단기가 차단되는 경우도 있었으며, 차단되지 않는 경우도 있었다. 또한 4개사의 제품 중 1개사의 제품은 접속단자 주변 절연재료로 아크에 의한 화염전이가 용이하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.5
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• pp.1071-1077
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• 2010

The six-port phase correlator using lumped elements was designed and fabricated in this paper, also the receiving performance of L-band direct conversion receiver using lumped six-port phase correlator element was analyzed. The proposed L-band lumped six-port phase correlator element was composed of a resistive power divider and the twist-wire coaxial cables. The proposed lumped six-port structure provides the small-sized configuration and wide-band characteristics. The performance of the L-band lumped direct conversion receiver structure was measured under the conditions of 1.69 GHz frequency for LO-CW signal and RF-QPSK signal, which are input signals for the lumped six-port phase correlator element. The direct conversion receiving structure using the proposed lumped six-port phase correlator element can recovered the good digital I/Q signal.

• Electrical & Electronic Materials
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• v.6 no.1
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• pp.28-33
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• 1993

Short channel 비휘발성 SNOSFET EEPROM 기억소자를 CMOS 1 Mbit 설계규칙에 따라 제작하고 특성과 응용을 조사하였다. 논리 어레이를 실현하기 위한 SNOSFET는 4단자와 2단자 비휘발성 메모리 셀로 구성하고 이에 대한 기록과 소거 특성을 조사하였다. 결과적으로 4단자 소자와 2단자 소자의 메모리 윈도우는 각각 기록과 소거에 의하여 "1"상태와 "0"상태로 동작되는 저전도 상태와 거전도 상태를 나타냈다. 4단자 2 x 2 메트릭스 어레이는 양극성으로 동작하였으며 2단자 2 x 2 메트릭스 어레이는 단극성으로 동작하였다.릭스 어레이는 단극성으로 동작하였다.

• Journal of Applied Reliability
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• v.6 no.4
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• pp.307-315
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• 2006

차량 전장품 중 와이어링 하네스에서 큰 전류가 흐르는 회로의 연결 단자가 가지는 전기적 내구 성능 및 기계적 성능을 확보하기 위하여 단자 압착부의 압축율 최적화 기법을 개발하였다. 우선 단자 제작 과정을 표준화한 후 압착부의 주요 인자인 기계적 인장강도와 내부 부식 정도에 의한 전기적 저항 중대로 화재가 발생 가능성 관점에서 접근하였다. 여러 가지 실험을 통하여 얻어진 DATA를 분석한 결과 회귀 2차 모형을 사용하여 대전류 단자 압착부의 전기적/기계적 내구 성능 최적화 구간을 설정 하였으며, 이의 과정을 제시 하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.11
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• pp.2391-2396
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• 2010

The power-controlled six-port element that can control the local oscillator signal power and receiving RF signal power was designed and implemented in this paper. The direct conversion six-port element configuration was proposed, which provides the constant six-port output power by controlling the six-port input power with various signal strength. The direct conversion six-port element protects the power detector element of six-port receiver from the saturation status and compensates the transmission performance degradation. For implementation of power-controlled six-port element, the power-controlled six-port element including the power controller was analyzed. The implemented power-controlled six-port element shows the power control capability of 36 dB and gain imbalance of about 1.6 dB, phase imbalance of about $4^{\circ}$ in the frequency range of 1.69 GHz. The measured results show the good performance as direct conversion front-end element.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.12
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• pp.2615-2621
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• 2010

The multi-band six-port phase correlator using metamaterial was designed and fabricated in this paper. The lumped metamaterial structure that can process the dual-band receiving signal was analyzed. Based on the analyzed results, the small-sized metamatrial six-port phase correlator for multi-band direct conversion method was proposed and fabricated. Also, the resistive power divider and $90^{\circ}$ hybrid coupler that comprises the six-port phase correlator were implemented based on the scattering parameters of metamatrial six-port phase correlator. The measured results of the proposed six-port phase correlator show the good agreement with simulation results. The performance of the six-port phase correlator shows the reflection loss below -20 dB in the dual-band. Also, the proposed six-port phase correlator got a good transmission characteristic within 1 dB gain difference and ${\pm}4.1^{\circ}$ phase imbalance, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.13-14
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• 2005

ZnO 단일 나노선 field effect transistor (FET) 소자의 2단자 전류-전압 특성을 조사해 보면 n-type 반도체 특성이 나타남을 알 수 있다. 그러나 2단자로 측정 할 경우 반도체 나노선과 금속 전극사이에 존재하는 접촉저항의 영향이 필연적으로 포함된다. 따라서 측정한 결과가 나노선에 의해서 나타나는 고유한 특성인지 접촉저항의 원인이 되는 에너지 장벽의 성질인지 명확히 밝힐 필요가 있다. 그래서 이번 연구에서는 4단자 측정방법을 이용하여 접촉저항 성분을 배제한 소자의 고유한 성질을 밝혀낼 뿐만 아니라, 이것을 2단자의 결과와 비교함으로써 접촉점에서 나타나는 에너지 장벽의 특징도 파악해 낼 수 있었다. 실험에서 사용된 ZnO FET 소자의 경우, 접촉점에서 생기는 에너지 장벽을 터널링을 통해 극복하는 것으로 분석되었고 이는 온도 변화에 따른 4 단자 및 2 단자 전류-전압 측정을 통해 확인될 수 있었다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.11
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• pp.2621-2626
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as doping distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.10a
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• pp.691-694
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• 2013

This paper has presented the potential distribution for asymmetric double gate(DG) MOSFET, and sloved Poisson equation to obtain the analytical solution of potential distribution. The symmetric DGMOSFET where both the front and the back gates are tied together is three terminal device and has the same current controllability for front and back gates. Meanwhile the asymmetric DGMOSFET is four terminal device and can separately determine current controllability for front and back gates. To approximate with experimental values, we have used the Gaussian function as charge distribution in Poisson equation. The potential distribution has been observed for gate bias voltage and gate oxide thickness and channel doping concentration of the asymmetric DGMOSFET. As a results, we know potential distribution is greatly changed for gate bias voltage and gate oxide thickness, especially for gate to increase gate oxide thickness. Also the potential distribution for source is changed greater than one of drain with increasing of channel doping concentration.