• Title/Summary/Keyword: 단결정

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Development and application of the magnetic field device for single crystal growth (자기장 단결정 성장장치의 개발과 적용)

  • Kim, Shin Ae;Cho, Sang-Jin;Magay, Elena;Ryu, Sun-Young
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.23 no.1
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    • pp.1-7
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    • 2013
  • The three-dimensional structure of the proteins, including the location of the hydrogen atoms can be analyzed by using neutron diffraction. In order to grow single crystals for neutron diffraction experiments, we developed a simple magnetic field device with the commercial magnets and succeeded in growing hen egg-white lysozyme single crystals of more than 1 $mm^3$ in volume using this device. The crystals grown with a magnetic field were larger and had perfect transparency, whereas the crystals grown without a magnetic field had micro-cracks. The result of the X-ray measurement showed a good resolution and small mosaicity for the crystals grown in the presence of a magnetic field.

Comparison of Chemicophysics Properties of the Detonation Monocrystalline and Synthetic Polycrystalline Nanodiamond (폭발 단결정과 합성 다결정 나노다이아몬드의 물리화학적 특성 비교)

  • Kang, Soon-Kook;Chung, Myung-Kiu
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.10
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    • pp.4689-4695
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    • 2011
  • Nanodiamond is a relatively new nanomaterial with broad prospects for application. In this paper, a variety of methods were used to analyze comprehensively chemicophysics properties of the detonation monocrystalline and synthetic polycrystalline nanodiamond, XRD spectroscopy, EDS, HRTEM, FTIR, Raman spectroscopy, TGA-DTA and BET. The results show that the monocryctalline detonation nanodiamond particles are spherical or elliptical shape of 4nm ~ 6nm grain size and the polycryctalline synthetic nanodiamond particles are angular shape of 80nm ~ 120nm grain size. The surface of the monocrystalline and polycrystalline nanodiamond contain hydroxy, carbonyl, carboxyl, ether-based resin, and other functional groups. The phase transition temperature of the monocrystalline detonation nanodiamond in the $N_2$ is about $650^{\circ}C$.

Growth of calcite$(CaCO_3)$ single crystal by hydrothermal method (수열법에 의한 calcite$(CaCO_3)$ 단결정 성장)

  • Lee, Yeong-Guk;Yu, Yeong-Mun;Park, Ro-Hak
    • Korean Journal of Crystallography
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    • v.7 no.1
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    • pp.30-35
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    • 1996
  • Calcite(CaCO3) single crystals were grown hydrothermally and transmittance of as grown crystals was measured. Instead of platinium, teflon was lined onto the wall of autoclave to prevent the corrosion of autoclave wall by acidic NH4Cl solution. Spontaneous nucleation and growth of calcite crystal on teflon was reduced considerably by addition of NaCl and /or CH3COOH and applying low temperature gradient. When the temperature gradient exceeded to a few degrees from the critical temperature gradient(6-7℃), spontaneous nucleation and growth was rapidly increased in any hydrothermal solutions. Precise temperature control is thought to be the most important factor for the growth of calcite single crystal by hydrothermal technique. As grown calcite single crytal showed high transmittance compared to natural one by UV-visible analysis.

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4H-SiC bulk single crystal growth using recycled powder (재생 분말을 활용한 4H-SiC 벌크 단결정 성장)

  • Yeo, Im Gyu;Lee, Jae Yoon;Chun, Myong Chuel
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.32 no.5
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    • pp.169-174
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    • 2022
  • This study is to verify the feasibility of SiC single crystal growth using recycled SiC powder. The fundamental physical properties such as particle size, shape, composition and impurities of the recycled powder were analyzed, and the sublimation behavior occurring inside the reactor were predicted using the basic data. As a result of comprehensive judgment, the physical properties of the recycled powder were suitable for single crystal growth, and single crystal growth experiments were conducted using this. 100 mm 4H-SiC single crystal ingot with a height of 25 mm was grown without polytype inclusion. In the case of micro-pipe density was 0.02 ea/cm2 and resistivity characteristics was 0.015~0.020 ohm·cm2, commercial level quality was obtained, but additional analysis related to dislocation density and stacking faults is required for device application.

A study on the growth and properties of KTP single crystals (II) ($KTP(KTiOPO_4)$ 단결정 육성 및 물성 연구 (제2보))

  • Lee, M.J.;Cha, Y.W.;Orr, K.H.;Kim, P.C.
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.4 no.3
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    • pp.223-229
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    • 1994
  • $KTP(KTiOPO_4)$ single crystals have been hydrothermally grown in KOH solutions. Properties and Raman spectra of grown crystal were investigated. The most effective solvents for the crystal growth of KTP were KOH and KF solutions. In this study, the properties of KTP single crystals grown hydrothermally at $500^{\circ}C$ in 9 m KOH solution were measured. The following results were obtained : lattice parameters ; a=1.281 nm and c=1.058 nm, density ; $2.94 g/cm^3$, Vickers hardness ; $562kg/cm^2$, refractive indices ; $n_e=1.740$ and $n_e= 1.747.$ And Raman spectra of hydrothermal growth KTP single crystal have been investigated at room temperature under atmospheric pressure. As a result, the $A_1$ modes agree very well with KTP single crystal of high temperatures solution growth but the behavior of $B_2$ modes were slightly different.

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Growth and defects of ZnSe crystal (ZnSe 단결정 성장과 결정결함)

  • 이성국;박성수;김준홍;한재용;이상학
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.7 no.1
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    • pp.76-80
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    • 1997
  • ZnSe single crystals were grown by seeded chemical vapor transport in $H_2$ atmosphere. The influence of the growth parameters on the crystal defect was investigated. The grown ZnSe single crystal was characterized by chemical etching, X-ray rocking curve and photoluminescenc e measurements.

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Fabrication of Semiconductor Devices and Its Characteristics for $MgGa_{2-x}In_xSe_4$ Single Crystals ($MgGa_{2-x}In_xSe_4$ 단결정을 이용한 광전반도체소자 제작과 그 특성 연구)

  • 김형곤;김화택
    • Journal of the Korean Vacuum Society
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    • v.2 no.1
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    • pp.65-72
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    • 1993
  • MgGa2-xInxSe4 single crystal을 bridgman technique로 성장시켰다. 성장된 단결정은 rhombohedral 구조를 가지고 있었으며, lattice constant는 a=3.950~4.070$\AA$, c=38.89~39.50$\AA$으로 주어졌고, 높은 photoconductivity를 가지고 있었다. 이 단결정의 energy gap은 2.20~1.90eV이었고, photoconductivity spectrum에 peak의 energy는 2.31~2.01eV로 주어졌으며, photoconductivity의 time constant는 0.24~0.34sec로 주어졌다.

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Photoluminescence of $Ga_2S_3$: Er Single Crystals ($Ga_2S_3$: Er 단결정의 Photoluminescence 특성 연구)

  • 진문석;김화택
    • Journal of the Korean Vacuum Society
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    • v.7 no.1
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    • pp.66-71
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    • 1998
  • Two kinds of $Ga_2S_3:Er$ (type A and type B) single crystals were grown by the chemical transport reaction method using iodine as a transport agent. The single crystals were crystallized into a monoclinic structure. The optical energy band gaps were found to 3.375 eV for the $Ga_2S_3:Er$ (type A) single crystal and 3.365 eV fir the $Ga_2S_3:Er$ (type B) single crystal at 13K. When the $Ga_2S_3:Er$ (type A and type B) single crystals were excited by the 325 nm-line of a Cd-He laser, Photoluminescence spectra of the $Ga_2S_3:Er$ (type A) single crystal exhibited blue emission band peaked at 444 nm and green and red emission bands peaked at 518 nm and 690 nm. Pgitikynubescebce soectra if the $Ga_2S_3:Er$ (typeB) single crystal showed green and red emission bands peaked at 513 nm and 695 nm. Sharp emission peaks in the two kinds if $Ga_2S_3:Er$ single crystal were observed near 525 nm, 553 nm, 664 nm, 812 nm, 986 nm, and 1540 nm and analysed as originating from the electron transitions between the energy levels of $Er^{3+}$ ion.

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Single Crystal Growth of GaAs by Single Temperature Zone horizontal Bridgman(1-T HB) Method (단일 온도대역 수평 Bridgman(1-T HB) 법에 의한 GaAs 단결정 성장)

  • 오명환;주승기
    • Korean Journal of Crystallography
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    • v.7 no.1
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    • pp.73-80
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    • 1996
  • The single crystal growth has been carried out with the newly designed 1-T HB(single temperature zone horizontal Bridgman) system for GaAs crystals of 2 inch diameter doped with Si, Zn or undoped. With this method, incidence probability of single crystallinity was shown to be 0.73. Lattice defects evaluated from EPD(etch pit density) measurement were in the range of 5,000-20,000/cm2, dependent upon the doping condition. For the undoped GaAs crystals, carrier concentrations from the Hall measurement were ∼1×1016/cm3 at the seed part, which were less than half the concentrations of double of triple temperature zone(2-T, 3-T) HB grown crystals. By the 1-T HB method, therefore, GaAs crystals can be grown successfully with better yield and higher purity.

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Synthesis of free-standing ZnO/Zn core-shell micro-polyhedrons using thermal chemical vapor deposition (열화학기상증착법을 이용한 프리스탠딩 ZnO/Zn 코어셀 마이크로 다면체 구조물의 합성)

  • Choi, Min-Yeol;Park, Hyun-Kyu;Jeong, Soon-Wook;Kim, Sang-Woo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.4
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    • pp.155-159
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    • 2008
  • In this work, we report synthesis of free-standing ZnO/Zn core-shell micro-polyhedrons using metal Zn pellets as a source material by the thermal chemical vapor deposition process. Scanning and transmission electron microscopy measurements were introduced to investigate morphologies and structural properties of as-grown ZnO/Zn core-shell micro-polyhedrons. It was found that micro-polyhedrons were composed of inner single-crystalline metal Zn surrounded by single-crystalline ZnO nanorod arrays. The inner single crystalline metal Zn with micro-scale diameter has a hexagonal crystal structure. Diameter and height of ZnO nanorods covering the metal Zn surface are below 10 nm and 100 nm, respectively. It was also confirmed that c-axis oriented ZnO nanorods are single crystalline with a hexagonal crystal structure.