• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.214-217
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• 2004

숭화법을 이용한 탄화규소(Silicon carbide) 단결정 성장시 사용되는 원료의 상(phase)이 단결정 성장에 미치는 영향을 알아보기 위해 알파형 탄화규소 분말(${\alpha}-SiC$ powder)과 베타형 탄화규소 분말(${\beta}-SiC$ powder)을 각각 사용하였다. 알파형 탄화규소 분말을 사용한 경우에 단결정(single-crystal)을 성장할 수 있었으나, 베타형 탄화규소 분말을 사용하였을 때에는 다결정(poly-crystal)이 성장되었다. 다결정 형성요인에 관한 EPMA 분석결과, 베타형 탄화규소 분말의 탄소에 대한 실리콘의 원소조성비$(N_{Si}/N_C\;=\;1.57)$가 알파형 탄화규소 분말의 경우보다$(N_{Si}/N_C\;=\;0.81)$ 높음을 확인하였다. 따라서 흑연도가니(crucible) 내부의 실리콘 원자가 알파형 탄화규소 분말을 사용하는 경우보다 높은 과포화상태가 되어 종자정 표면에 미세한 실리콘 액적(droplet)이 중착되고 이것으로부터 일정하지 않은 방향성(random orientation)을 갖는 탄화규소 다결정(다양한 방향성을 갖는 다형 포함)이 성장한 것으로 실리콘과 탄소 원소에 대한 EPMA 지도(map) 결과를 통해 확인할 수 있었다.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.141-157
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• 1995

Single crystals of TeO2 with large diameter were grown by Czochralski technique with auto-diameter control system. The ratio of crystal to crucible was 60-70%. The effect of critical pulling and rotation rate on the crystal quality was studied. Optimum growth parameters for high quality crystal pulling rate was less than 1.2 mm/hr. The solid-liquid interface was convex at the rotation rate of 10-23 rpm and concave at the rotation rate of more than 25 rpm, depending on the size of crystal and crucible. The platinum concentration in the melts is one of the main factors of the constitutional supercooling and thus the bubble entrapment in the growing crystal. Growth axis was confirmed to {110} direction during the whole growth procedure. Infrared spectrometric study and dislocation density measurment by chemical etching method on the grown crystal were performed. Finally, the reasons of cooperation of striations, inclusions, and optical inhomogeneities were discussed.

• Journal of the Korean Vacuum Society
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• v.3 no.2
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• pp.239-246
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• 1994

Cd1-xCoxIn2Se4($\chi$=0.000, 0.001, 0.005, 0.10, 0.50) 단결정을 수직 Bridgman 방법으로 성장시키고 성장된 단결정의 조성 및 결정구조를 조사하고 광학적 특성을 연구하였다. 성장된 단결정은 pesudocubic 구조이고 격자상수는 조성$\chi$가 증가함에 따라 약간씩 감소하였다. 기초 흡수단 영역에서의 광흡수 spectra 측정에서 이 단결정들은 간접전이 및 직접전이 및 직접전이 energy gap을 갖고 있으며 이들 energy gap의 조성의존성은 조성이 $\chi$=0.00에서 $\chi$=0.016까지는 기울기가 같고 $\chi$=0.016에서 기울 기가 변화되어서 $\chi$=0.016에서 $\chi$=0.50까지는 같은 기울기를 갖고 있다. 이러한 현상은 $\chi$=0.016에서부터 CdIn2Se4 내에 cobalt를 포함한 새로운 물질이 형성되고 이 물질과 a-CdIn2Se4 사이에 고체고용체를 형 성하기 때문이다.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.129-133
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• 1997

본 연구에서는 LiNbO$_3$ 단결정 소재의 광손상에 대한 저항성을 향상시키는 첨가물로 잘 알려져 이쓴 MgO 및 ZnO를 첨가하여 육성한 조화용융조성(congruent melting composition)의 LiNbO$_3$ 단결정의 domain 구조는 이들 dopants를 첨가함에 따라 single domain에서 ring 형태의 주기적인 domains으로 변화함을 확인하였고, 첨가된 이온이 domain 형성에 미치는 영향을 전자현미경(SEM-WDS)으로 관찰하였다. 또한, 육성한 [Li1-5xNb5(x-y)Mg(or Zn)5y]Nb1-4x+3yO3 단결정들의 유전율(전이온도) 변화 및 광학적 특성[광투과율, 굴절률]을 측정하여 undoped LiNbO$_3$단결정과 비교하였다. 첨가물을 첨가함에 따라 전이온도는 약 20~3$0^{\circ}C$정도 증가하였으며, 10-3 order의 굴절률 변동치를 나타내었다. 또한, 육성된 결정들의 투과율은 대체로 70~80%를 나타내었고, 첨가물을 첨가함에 따라 흡수단과 OH- 흡수 band는 단파장쪽으로 각각 약 5~10nm, 40nm이동됨을 확인하였다. 이는 LiNbO$_3$단결정의 광손상 저항성이 향상되었음을 간접적으로 보여주는 결과이다.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.175-180
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• 1998

Nd:YAG single crystal widely used as solid state laser was grown by Czochralski method. <111> single crystal with 0.9at% of $Nd^{3+}$ was grown from the Czochralski furnace with a automatic diameter control system. The vertical temperature gradient in the liquid was the major factor that influence the crystal quality, and the crystal diameter was controlled by the home made computer program. The crystal boule with $\phi$50mm$\times$ι100mm effective size was cut, polished, and antireflection coated. The optical evaluation such as absorption spectrum, fluorescence spectrum coincide with typical features of Nd:YAG single crystal. The laser rod was assembled into the CW laser generator with a Kr lamp. The maximum CW laser output was 70 W and the threshold power and efficiency was 1.3kW and 1.64% respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.129-134
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• 1995

Bulk properties of single crystals $KMnCl_3$ undoped and Mg- doped $LiNbO_3$ were examined by using the neutron scattering technique. This study shows that the good -looking samples by polarized light have to be examined by the. neutron scattering to ensure the bulk properties of single crystal. Large mosaic spread in KMnCb indicated the crystal is not in a single domain. Many parts are relatively randomly directed against crystal axis with close angle each other. For the small mosaic spread of Li~ in the scattering pattern, it is found that some large domains have close orientations. Mg doped Li~ is turned out to be a well grown one.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.286-291
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• 2000

$Cd_{1-x}Mn_{x}Te$ singe crystals were grown by the vertical Bridgman method and the Faraday rotations were measured as a function of wavelength and magnetic field. The Verdet constants were evaluated using the result of Faraday rotation. The Verdet constants were maximum at nearly absorption edge and increased for $0\leq x \leq 0.38 $ but decreased for x>0.40. We found that large Faraday rotation occur in $Cd_{0.62}Mn_{0.38}Te$ at nearly absorption edge wavelength was more useful for a magnetic field sensor than any other crystals, and $Cd_{0.60}Mn_{0.40}Te$ crystal was useful in this application when wavelength is He-Ne laser wavelength.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.279-285
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• 2000

High quality crystals of $YMnO_3$, which is interested in non-volatile memory device application, were grown by the floating zone method. Optimum condition for powder synthesis was established to be $1200^{\circ}C$ for 10 hrs and optimum condition for sintering of $YMnO_3$feed-rod was established to be $1500^{\circ}C$ for 10hrs respectively. It was found from non-seeded growth experiment that $YMnO_3$crystal was grown preferentially to the [1010] orientation. The $YMnO_3$single crystal, which was grown to the direction of perpendicular to C-axis, was typically 5mm in diameter, 50 mm in length and showed dark-blue color.

• Korean Chemical Engineering Research
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• v.58 no.3
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• pp.369-380
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• 2020

Most mono-crystalline silicon ingots are manufactured by the Czochralski (Cz) process. But If there are oxygen impurities, These Si-ingot tends to show low-efficiency when it is processed to be solar cell substrate. For making single-crystal Si- ingot, We need Czochralski (Cz) process which melts molten Si and then crystallizing it with seed of single-crystal Si. For melts poly Si-chunk and forming of single-crystalline Si-ingot, the heat transfer plays a main role in the structure of Cz-process. In this study to obtain high-quality Si ingot, the Cz-process was modified with the process design. The crystal growth simulation was employed with pulling rate and rotation speed optimization. Studies for modified Cz-process and the corresponding results have been discussed. The results revealed that using crystal growth simulation, we optimized the oxygen concentration of single crystal silicon by the optimal design of the pulling rate, rotation speed and melt charge level of Cz-process.

• 대한방사선방어학회:학술대회논문집
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• 2009.11a
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• pp.166-167
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• 2009