• Korean Journal of Materials Research
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• v.6 no.7
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• pp.733-741
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• 1996

In this study MeV Si self ion implantations were done to reveal the intrinsic behavior of defect formation by excluding the possibility of chemical interactions between substrate atoms and dopant ones. Self implantations were conducted using Tandem Accelerator with energy ranges from 1 to 3 MeV. Defect formation by high energy ion implantation has a significant characteristics in that the lattice damage is concentrated near Rp and isolated from the surface. In order to investigate the energy dependence on defect formation, implantation energies were varied from 1 to 3 MeV under a constant dose of $1{\times}10^{15}/cm^2$. RBS channe!ed spectra showed that the depth at which as-implanted damaged layer formed increases as energy increases and that near surface region maintains better crystallinity as energy increases. Cross sectional TEM results agree well with RBS ones. In a TEM image as-implanted damaged layer appears as a dark band, where secondary defects are formed upon annealing. In the case of 2 MeV $Si^+$ self implantation a critical dose for the secondary defect formation was found to be between $3{\times}10^{14}/cm^24$ and $5{\times}10^{14}/cm^2$. Upon annealing the upper layer of the dark band was removed while the bottom part of the dark band did not move. The observed defect behavior by TEM was interpreted by Monte Carlo computer simulations using TRIM-code. SIMS analyses indicated that the secondary defect formed after annealing gettered oxygen impurities existed in silicon.

• Analytical Science and Technology
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• v.16 no.5
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• pp.375-390
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• 2003

A single crystal of fully indium-exchanged zeolite A (In-A) was brought into contact with antimony in a fine Pyrex capillary at $350^{\circ}C$ for 6 days. The reaction was monitored by electron-probe X-ray microanalysis (EPXMA). The crystal structure of antimony-sorbed indium-exchanged zeolite A has been determined by single-crystal X-ray diffraction techniques at $21^{\circ}C$ in the cubic space group Pm ${\bar{3}}m$. The crystal structure of $In_8Si_{12}Al_{12}O_{48}{\cdot}(In)_{1.35}(Sb)_{0.7}$ ($a=12.111(2){{\AA}}$, $R_1=0.071$, and $R_2=0.067$) has 8 indium cations, 1.35 indium atoms, and 0.7 antimony atoms per unit cell. Unit cell 1 ($In_8-A{\cdot}In$, 65% of unit cells) contain the $(In_5)^{8+}$ cluster. In unit cell 2 ($In_8-A{\cdot}(In)_2(Sb)_2$, 35% of unit cells), two $(In_3)^{2+}$ cluster and one $(In_3Sb_2)^{7+}$ cluster are found in the large cavity.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.32-36
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• 2005

[ $WO_3$ ] and $NiO-WO_3$ thin films were deposited on a Si (100) substrate by using high vacuum thermal evaporation. The effects of various film thicknesses on the surface morphology $WO_3$ and $NiO-WO_3$ thin films were investigated. X-ray diffraction (XRD), Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy(XPS) were employed to characterize the deposited films. The results suggest that as $WO_3$ thin films became thick, their grain grew up to a $0.6{\mu}m$. On the other hand, NiO-doping to $WO_3$ thin films inhibited the grain growth five times less than undoped $WO_3$ thin films. This results show that NiO doping inhibited the grain growing of $WO_3$ thin films. Also, the variation of NOx sensitivity $(R_{NOx}/R_{air})$ to the thickness of $WO_3$ and $NiO-WO_3$ thin films were measured according to the thickness change of thin films and the working temperature of sensor in 5ppm NOx gas. As a result, $NiO-WO_3$ thin films showed more excellent properties than $WO_3$ thin films for NOx sensitivity.

• Journal of the Korean Magnetics Society
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• v.17 no.1
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• pp.10-13
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• 2007

Single crystalline, $LuFe_2O_4$, was grown by the floating zone method. The crystal structure was a two-dimensional layered-type rhombohedral($R\={3}mh$) structure, with an $a_0=3.440(2)\;{\AA}\;and\;a\;c_0=25.263(2)\;{\AA}$. The magnetic $N\'{e}el$ temperature($T_N$) was determined to be 250 K. The $M\"{o}ssbauer$ spectrum at 12 K was fitted with four sextet sets which was resulted from the crystal structure. The spectrm at room temperature consisted of three singlets and a doublet with the electric quadrupole splitting. The isomer shift($\delta$) value of the singlet was $0.20{\pm}0.01mm/s$ relative to the Fe metal indicating the $Fe^{3+}$ valence state, and the value of the doublet was $0.70{\pm}0.01mm/s$ indicating $Fe^{2+}$. The $M\"{o}ssbauer$ absorption area ratio between $Fe^{3+}$ and $Fe^{2+}$ at room temperature was 1:1. The doublet phase of spectra gradually disappears by up to 360 K. At 360 K, the spectrum shows the singlet phase. We suggested that the spontaneous polarization effect of $LuFe_2O_4$ was caused by the change of iron behavior.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.63-73
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• 1993

Ag+ 이온이 부분적으로 치환된 3가지 제올라이트 A(Ag4Na8-A, Ag6Na6-A 및 Ag8Na4-A)를 완전히 탈수한 후 280℃에서 24시간동안 약 0.1 Torr의 Cs중기로 처리하 였다. 이들의 결정구조는 22(1)℃ 노에서 입방공간군 Pm3m (단위세포상수 a가 각각 12.321(3) A, 12.295(1) A 및 12.380(7) A임)을 사용하여 단결정 X-선회절법으로 해석 하였다. 이들 세가지 구조에서 Cs+이온은 각각 서로 다른 4개의 결정학적 위치에서 발견되었다. 단위세포당 3개의 Cs+이온은 8-링 중심에 위치하고, 약 6.9-7.3개의 Cs+이온 은 큰 동공의 6-링과 마주보는 위치에 있는 3회 회전축상에서 발견되었다. 그리고 약 2.17-2.74개의 Cs+이온은 소다 라이트 동공내에서 발견되며 약 0.5-1.0개의 Cs+'이온은 4링과 마주보는 곳에 위치한다. 또한 이들 구조에서 단위세포당 각각 1.88(5),2.30(3) 및 5.28(10)개의 Ag종이 존재하며 이들은 큰동공의 중심에서 헥사실버 클러스트를 형성한다. 8-링위치가 Cs+이온으로 모두 차있어서 Ag0가 골조밖으로 이동하는 것을 막을 수 있다. 각각의 헥사실버 클러스터는 서로 다른 좌표에 위치하는 14개의 Cs+이온에 의해 안정화된다. 이들 구조에서 발견되는 약 12.35-13.49개의 Cs+이온들은 Cso의 흡착이 일어나 제올라이트 기본 골 격에 있는 음이온 전하와 균형을 맞출 수 있는 12개의 Cs+ 이온 이상의 이온 또는 원자로 존재하고 있다. Cs+의 배열 은 다음과 같은 두 가지 배열로 쉽게 설명할 수 있다. 일부는 2개의 Cs+이온이 소다이트 동공내에 있는 6-링과 마주보는 곳에 위치하고 큰동공내에는 6개의 Cs+이온이 6링 근처에 위치하며 1개는 4-링 근처에 위치한다. 그 나머지는 소다라이트 동공내에 위치하는 3개의 Cs+이온과 한변의 길이를 3.52 A로 갖는 삼각형을 형성한 후 6-링을 통 하여 큰 동공 내에 위치한 3개의 Cs원자와 결합하게 되므로 3m (C3v)의 대칭구조를 갖는 (CS6)4+클러스터를 형성한다. 그 밖의 5개 Cs+이온은 비어있는 큰동공의 6-링에 위치한다.

• Korean Journal of Crystallography
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• v.4 no.2
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• pp.54-62
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• 1993

The crystal shnture of dehydrated fully Cd2+-exchanged zeolite A evacuated at 2 × 10-6 Torr and 650℃ (a:12.189(2) A) and of its iodine sorption corrplex (a:12.168(2)A) have been netsmlmn by single uystal x-ray diffraction techliques in the cubic space group hkTn at 21(1)℃. The strutures were refined to final error indices, Ri:0.057 and R2 =0.063 with 186 reflections and Rl:0.082 and R2:0.085 with 181 reflections, respectively, for which 1>3σ(In both structure, six lie at two distinguished threefold axes of unit cell ten the crystal structure of an iodine sorption complex of Cd6-A four Cd2+ ions are recessed 0.69(1) A into the large cavity to complex each with from the (111) plane of 0(3), whereas two Cd2+ ions recessed 0.68(1) A into the sodalite unit Awximately 4.0 l3ions per nit cell are sorbed. Each bridge between a Cd2+ ion and 8-ring oxygens ((I-I-I)= 117(1) ˚ and 0(1)-I(1)-I(2)=172(1)). The near linear I-I-0 angle and its interatomic distance (I-0=3.57(3) A) are indicative of a weak charge transfer interacticn between the frarrework oxygen and iodine. The existence of In3 inside the large cavity indicates that the If ions and H ions may be produced by reaction of In vapor with water molecules which maybe associated with Cd2+ ions in partially dehydrated Cd6-A In3- ions may be produced by the combination of I- and I2.

• Korean Journal of Crystallography
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• v.2 no.1
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• pp.17-22
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• 1991

The crystal structure of an acetylene sorption complex of vacuum dehydrated fully Cda+ _exchanged zeolite A has been determined from three-dimensional X-ray diffraction data gathered by counter method. The structure was solved and refined in the cubic space group Pm3m at 294(1) K, a=12.202(3) A and Z=1. We crystal was prepared by dehydration at 723 K and 2.67×104 Pa for 2 days, followed by exposure to 1.60×104 Pa of acetylene gas at 298(1) K. All six Cd2+ions per unit cell are associated with 6-oxgen rings of the aluminosilicate framework. They are distributed over two distinguished threefold axes of unit cell; two of these Cd2+ ions are recessed 0.694 into the sodalite unit from (111) plane of three 0(3)'s and each approaches three framework oxides; the other four Cd2+ ions extend approximately 0.586A into the large cavity. The four Cd2+ ions are in a near tetrahedral environment, 2.220(9)A from·three framework oxide ions and 2.74(7) A from each carbon atom of an acetylene molecule(which is here counted as a monodentate ligand). Full matrix least squares refinement converged to the final error indices R1=0.093 and R2=0.105 using the 292 independent reflections for which I>3σ(I).

• Korean Journal of Materials Research
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• v.22 no.11
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• pp.569-574
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• 2012

Large single grain $Gd_{1.5}Ba_2Cu_3O_{7-y}$ (Gd1.5) bulk superconductors were fabricated by a top-seeded melt growth (TSMG) process using an $NdBa_2Cu_3O_{7-y}$ seed. The seeded Gd1.5 powder compacts with a diameter of 50 mm were subjected to the heating cycles of a TSMG process. After the TSMG process, the diameter of the single grain Gd1.5 compact was reduced to 43 mm owing to the volume contraction during the heat treatment. The superconducting transition temperature ($T_c$) of the top surface of the single grain Gd1.5 sample was as high as 93.5 K. The critical current densities ($J_cs$) at 77 K and 1T and 1.5 T were in ranges of 25,200-43,900 $A/cm^2$ and 10,000-23,000 $A/cm^2$, respectively. The maximum attractive force at 77 K of the sample field-cooled using an Nd-B-Fe permanent magnet (surface magnetic field of 0. 527 T) was 108.3 N; the maximum repulsive force of the zero field-cooled sample was 262 N. The magnetic flux density of the sample field-cooled at 77 K was 0.311T, which is approximately 85% of the applied magnetic field of 0.375 T. Microstructure investigation showed that many $Gd_2BaCuO_5$ (Gd211) particles of a few ${\mu}m$ in size, which are flux pinning sites of Gd123, were trapped within the $GdBa_2Cu_3O_{7-y}$ (Gd123) grain; unreacted $Ba_3Cu_5O_8$ liquid and Gd211 particles were present near the edge regions of the single grain Gd1.5 bulk compact.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.214-219
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• 2011

Today, various activities to save energy are being conducted around the world. Even in our country, carbon reduction policy is being conducted for low carbon green growth and with this movement, effort to replace energy sources by recognizing the problems on environment pollution and resource exhaustion due to the indiscrete usage of fossil fuel is being made. Therefore, active study on renewable energy is in progress as part of effort to replace the energy supply through fossil fuel and solar ray industry has rapidly developed receiving big strength of renewable energy policies. The conclusion of this study measuring the surface temperature change of single crystal and polycrystalline PV module in green roof system and non-green roof system aspect are as follows. There was approximately $4^{\circ}C$ difference in PV module temperature in green roof system and non-green roof system aspect and this has the characteristic to decrease 0.5% when the temperature rises by $1^{\circ}C$ when the front side of the module is $20^{\circ}C$ higher than the surrounding air temperature following the characteristic of solar cells. It can be concluded that PV efficiency will be come better when it is $4^{\circ}C$ lower. Also, in result of temperature measurement of the module back side, there was $5^{\circ}C$ difference of PV module installed on the PV module back side and green roof system side on the 5th, $3^{\circ}C$ on the 4th, $2^{\circ}C$ on the 5th to show decreasing temperature difference as the air temperature dropped, but is judged that there will be higher temperature difference due to the evapotranspiration latent heat effect of green roof system floor side as the temperature rises. Based on this data, it is intended to be used as basic reference to maximize efficiency by applying green roof system and PV system when building non-green roof system flat roof.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.408-412
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• 1998

Thermoelectric properties of Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$(0.05$\leq$x$\leq$0.25) prepared by mechanical alloying and hot pressing, were investigated. Contrary to the p-type behavior of single crystals, the hot-pressed Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$ exhibited ntype conduction without addition of donor dopant. When $Bi_2(Te_{0.85}Se_{0.15})_3$powders were annealed in (50% $H_2$ + 50% Ar) atmosphere, the hot-pressed specimen exhibited a positive Seebeck coefficient due to the reduction of the electron concentration by removal of the oxide layer on the powder surface and annealing-out of the excess Te vacancies. Among the Bi$_{2}$(Te$_{1-x}$Se$_{ x}$)$_{3}$fabricated by mechanical alloying and hot pressing, $Bi_2(Te_{0.85}Se_{0.15})_3$ exhibited a maximum figure-of-merit of 1.92 $\times$ $lO^{-3}$/K.