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Mirror Finishing of Co-Cr-Mo Alloy by Ultrasonic Elliptical Vibration Cutting Method (초음파타원진동절삭가공법에 의한 Co-Cr-Mo 합금의 경면가공)

  • Song, Young-Chan;Tanaka, Kenichi;Moriwaki, Toshinmichi
    • Journal of the Korean Society for Precision Engineering
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    • v.25 no.3
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    • pp.56-62
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    • 2008
  • The biocompatibility and the fatigue strength of Co-Cr-Mo alloy are excellent, so it is used well for the material of artificial joints. The head of artificial joint needs mirror surface for reduction of abrasive resistance. Mirror finishing of Co-Cr-Mo alloy with geometrically defined single crystal diamond cutting tools is handicapped by micro chipping of tool edge. In general, it is said that the micro chipping of diamond tool is caused by work hardening of Co-Cr-Mo alloy for the cut. In the present research, mirror finishing of Co-Cr-Mo alloy by applying ultrasonic elliptical vibration cutting was carried out. The experimental results show that the micro chipping of diamond tool was suppressed and the tool wear was remarkably reduced as compared with the ordinary diamond cutting without elliptical vibration motion. It was confirmed that the good mirror surface of maximum surface roughness of 25 nmP-V was obtained for the cutting length of about 14 m. It is expected that mirror finishing of Co-Cr-Mo alloy can be achieved by applying ultrasonic elliptical vibration cutting practically.

Refinement of the crystal structure of $>(Na, Ca)(Al, Si)_4O_8$ ($>(Na, Ca)(Al, Si)_4O_8$의 불안정상의 결정구조 정산)

  • 정수진
    • Korean Journal of Crystallography
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    • v.1 no.1
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    • pp.49-56
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    • 1990
  • The crystallizied Inactions of the two metastable phases in the glasses of plagioclase compositions were estimated by x-ray diffraction method. The orthorhombic metastable phase is easily drystaliized in the composition range of 70 to 80 mol% of albite, whereas the hexagonal metastable phase is mostly crystallized in the anonhite-rich side. For the purpose of refining the orthorhombic metastable structure some single crystal fragments of the composition Na,17ca‥‥All Isi2 nn were separated Som the crystallized glasses. The cell parameters of this crystal are a=8.237(1)A. b=8.644(1)A c=4.818(1)A. The space group of this crystal is Pn,2, Final atomic coordinates give R value of 0.040 and Rw of 0.028 with anisotropic thermal parameters. The position of Na and Ca atoms statistically distributed is splitted in two points with the occupancy of 0.5. The Si and Al atoms are statistically distributed in the six-membered ring of the Immm-type framework.

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The Growth of Magnetic DyBiIG by sol-gel Method (Sol-gel법에의한 BiDy-철 석류석의 합성)

  • Park, C.M.;Lee, S.H.;Kim, Seung-Hoon;Jang, Hee-Dong
    • Journal of the Korean Magnetics Society
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    • v.13 no.1
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    • pp.36-40
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    • 2003
  • We have grown D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ (x = 0.5,1.0, 1.5,2.0) magnetic garnet thin films upon $Al_2$O3i and GGG substrate using Pechini process. The annealing temperature to get single phase D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ garnet is dependent on substrate, i.e. the annealing temperature for GGG substrate il 5$0^{\circ}C$ lower than that for $Al_2$ $O_3$ substrate. The grains of garnet thin film grown on GGG (111) plane align along [111] direction, and in this case the hysteresis curve does not saturate up to H : 5000 Oe. We attribute this phenomenon to rotation magnetization process. The maximum amount of Bi substitution in polycrystalline D $y_{x}$B $i_{3-x}$F $e_{5}$ $O_{12}$ thin film prepared by Pechini process is restricted to 2.0 Bi atom/unit cell, and this value is less than that in single garnet crystall grown by LPE method.own by LPE method.ethod.

A Study on the Growth Behavior of $Y_2Ba_1Cu_1O_5$ Phase in Y-Ma-Cu-O System (Y-Ma-Cu-O계에서 $Y_2Ba_1Cu_1O_5$상의 성장거동에 관한연구)

  • Im, Dae-Ho;Song, Myeong-Yeop;Park, Jong-Hyeon;Lee, Hui-Gyun;Won, Dong-Yeon;Hong, Gye-Won
    • Korean Journal of Materials Research
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    • v.4 no.8
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    • pp.870-876
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    • 1994
  • In order to investigate the growth behavior of $Y_{2}Ba_{1}Cu_{1}O_{5}$(211) particles in $Y_{1}Ba_{2}Cu_{3}O_{7-\delta}$(123), 123 samples were quenched in air after heat treatment on polycrystal and single crystal MgO substrates at $1100^{\circ}C$ for various periods. 211 grains grew with the increase in holding time. The growth of 211 grains was faster on the polycrystal MgO substrate than on the single crystal MgO substrate. In the samples with the compositions of 211+xCuO($0.2\le X \le 0.8$), the growth rate of 211 grains increased with the increase in CuO content. In the sample with x=0.6 the largest 211 grains were observed. 211 grains in the $Y_{2}Ba_{1}Cu_{1.8}Sn_{0.1}O_{5+\delta}$ samples were distributed very finely and homogeneously. The retarding effect of $SnO_2$ addition on the growth of 211 grain appeared more pronounced in a CuO melt than in a $BaCuO_{2}$+ CuO melt.

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The Effect of Stress on the Thermal Stability of the TiS$i_2$ Film (TiS$i_2$ 박막의 열안정성에 미치는 막 스트레스의 영향)

  • Kim, Yeong-Uk;Kim, Yeong-Uk;Go, Jong-U;Lee, Nae-In;Kim, Il-Gwon;Park, Sun-O;An, Seong-Tae;Lee, Mun-Yong;Lee, Jong-Gil
    • Korean Journal of Materials Research
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    • v.3 no.1
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    • pp.12-18
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    • 1993
  • Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.

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The Crystal and Molecular Structure of Acetone 4-Benzylthiosemicarbazone (Acetone 4-Benzylthiosemicarbazone의 결정 및 분자구조)

  • Park Young Ja;Ahn Choong Tai
    • Journal of the Korean Chemical Society
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    • v.29 no.2
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    • pp.73-79
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    • 1985
  • The crystal and molecular structure of acetone 4-benzylthiosemicarbazone, $C_{11}H_{15}N_3S$, has been determined by the single crystal X-ray diffraction methods. The crystals are monoclinic, space group $P2_1/c$ with unit cell dimensions, a = 10.249(7), b = 11.403(9), c = 10.149(7)TEX>${\AA}$, ${\beta}$ = 90.9$(1)^0$ and z = 4. The intensities were collected on an automatic four-circle diffractometer with graphite-monochromated Mo-$K_{\alpha}$ radiation. The structure was solved by direct methods and refined by full matrix least-squares methods. The final R was 0.045 for 1554 observed reflections. S-C(8)-N(2)-N(3)-C(9)-C(10) atoms make a zigzag planar chain. There are no unusual bond lengths and angles. There are two independent hydrogen bonds in the crystal structure. One is N-H${\cdots}$S intermolecular hydrogen bond with the length of 3.555${\AA}$ and makes dimer-like units. The other is N-H${\cdots}$N intramolecular hydrogen bond with the length of 2.568${\AA}$. The structure was compared with those of other thiosemicarbazone derivatives.

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Synthesis and Characterization of Tetranuclear Molybdenum(Ⅵ) Complexes with Butylamidoxime Derivatives (부틸아미드옥심 유도체의 몰리브덴(Ⅵ) 사핵 착물의 합성과 성질)

  • Roh, Soo-Gyun;Oh, Sang Oh
    • Journal of the Korean Chemical Society
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    • v.39 no.7
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    • pp.552-558
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    • 1995
  • The tetranuclear complexes, $X_2[M_{O4}O_12{R'C(NH_2)NO}_2](X= n-Bu_4N^+$, $R'=(CH_3)_2CH$, $CH_3CH_2CH_2$, $CH_3SCH_2$; $X=(CH_3)_2CHC(=NH_2)NH_2^+$, $R'=(CH_3)_2CH$; $X = CH_3CH_2CH_2C(=NH_2)NH_2^+$, $R'=CH_3_CH_2CH_2$; $X=CH_3SCH_2C(=NH_2)NH_2^+$, $R'=CH_3SCH_2)$ have been synthesized by the reactions of monomeric and polynuclear complexes with isobutyl-, butyl- and thiomethylacetamidoxime. The prepared complexes were identified by elemental analysis, infrared, $^1H$ NMR and $^{13}C$ NMR spectroscopy. The structure of complex ${(CH_3)_2CHC(NH_2)_2}_2[M_{O4}O_{12}{(CH_3)_2CHC(NH_2)NO}_2]$ was determined by X-ray single crystal diffraction. Crystal data are follows: Monoclinic, $P2_{1/c}$, $a=10.168(3){\AA}$, $b=11.768(1){\AA}$, $c=13.557(1){\AA}$, ${\beta}=102.08(1)^{\circ}$, $V=1586.2(5){\AA}^3$, Z=2, final R=0.026 for 2951($F_0>3s(F_0)$). This complex is composed of a planar cyclic $[Mo_4({\mu}-O)_4]$ and two ${\mu}_4$-amidoximate.

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Effect on the surface passivation of i-a-Si:H thin films formed on multi-crystalline Si wafer (유도결합플라즈마 CVD법을 이용한 비정질 실리콘 박막증착을 통한 다결정 실리콘 기판의 표면 passivation 특성평가)

  • Jeong, Chaehwan;Ryu, Sang;Lee, Jong-Ho;Kim, Ho-Sung
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.82.1-82.1
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    • 2010
  • 수소화된 비정질 실리콘 박막을 이용한 반도체는 현재 태양전지, 트랜지스터, 매트릭스 배열 및 이미지 센서 등의 분야에서 이용되고 있다. 자세히 이야기 하면, 여러 가지의 광전효과 물질에 대한 특성이 있으며, 가시광선영역에 대하여 > $10^5cm^{-1}$이상의 매우 높은 광흡수계수와 낮은 온도를 갖는 증착공정 등이 있다. 박막의 밴드갭은 약 1.6~1.8eV로서 태양전지의 흡수층과 passivation층으로 적절하다. 여러 가지 종류의 태양전지 중 비정질 실리콘 박막/결정질 실리콘 기판의 구조로 이루어진 이종접합 태양전지는 저온에서 공정이 가능한 대표적인 것으로서 HIT(Heterojunction with Intrinsic Thin layer)구조로 산요사에 의해 제안된 것이다. 이것은 결정질 실리콘 기판과 도핑된 비정질 실리콘 박막사이에 얇은 진성층 비정질실리콘 박막을 삽입함으로서, 캐리어 전송을 좋게하여 실리콘 기판 표면의 passivation효과를 증대시키는 결과를 가지고 온다. 실험실 규모에서는 약 20%이상의 효율을 보이고 있으며, 모듈에서는 19.5%의 높은 효율을 보이고 있어 실리콘 기판을 이용한 고효율 태양전지로서 각광을 받고 있다. 이러한 이종접합 태양전지의 대부분은 단결정 실리콘을 사용하고 있는데, 점차적으로 다결정 실리콘 기판으로 추세가 바뀌고 있어, 여기에 맞는 표면 passivation 공정 및 분석이 필요하다. 본 발표에서는 다결정 실리콘 기판위에 진성층 비정질 실리콘 박막을 유도결합 플라즈마 화학기상 증착법(ICP-CVD)을 이용하여 제조하여 passivation 효과를 분석한다. 일반적으로 ICP는 CCP(coupled charged plasma)에 비해 약 100배 이상 높은 플라즈마 밀도를 가지고 있으며, 이온 충돌같은 표면으로 작용하는 것들이 기존 방식에 비해서 작다라는 장점이 있다. 먼저, 유리기판을 사용하여 ICP-CVD 챔버내에 이송 한 후 플라즈마 파워, 온도 및 가스비(SiH4/H2)에 따른 진성층 비정질 실리콘 박막을 증착 한 후, 밴드갭, 전도도 및 결합구조 등에 대한 결과를 분석한 후, 최적의 값을 가지고 250um의 두께를 갖는 다결정 실리콘을 기판위에 증착을 한다. 두께(1~20nm)에 따라 표면의 passivation이 되는 정도를 QSSPCD(Quasi steady state Photoconductive Decay)법에 의하여 소수캐리어의 이동거리, 재결합율 및 수명 등에 대한 측정 및 분석을 통하여 다결정 실리콘 기판의 passivation effect를 확인한다. 제시된 데이터를 바탕으로 향후 다결정 HIT셀 제조를 통해 태양전지 효율에 대한 특성을 비교하고자 한다.

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Adherence of Salivary Proteins to Various Orthodontic Brackets (다양한 교정용 브라켓 표면에 부착하는 타액단백질에 관한 연구)

  • Ahn, Sug-Joon;Ihm, Jong-An;Nahm, Dong-Seok
    • The korean journal of orthodontics
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    • v.32 no.6 s.95
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    • pp.443-453
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    • 2002
  • The principal aims of this study were to identify the composition of salivary pellicles formed on various orthodontic brackets and to obtain a detailed information about the protein adsorption profiles from whole saliva and two major glandular salivas. Four different types of orthodontic brackets were used. All were upper bicuspid brackets with a $022{\times}028$ slot Roth prescription; stainless steel metal, monocrystalline sapphire, polycrystalline alumina, and plastic brackets. Bracket pelicles were formed by the incubation of orthodontic brackets with whole saliva, submandibular-sublingual saliva, and parotid saliva for 2 hours. The bracket pellicles were extracted and confirmed by employing sodium dodecyl sulfatepolyacrylamide gel electrophoresis, Western transfer methods, and immunodetection. The results showed that low-molecular weight salivary mucin, ${\alpha}-amylase$, secretory IgA (sIgA), acidic proline-rich proteins, and cystatins were attached to all of these brackets regardless of the bracket types. High-molecular weight mucin, which promotes the adhesion of Streptococcus mutans, did not adhere to uy orthodontic brackets. Though the same components were detected in all bracket pellicles, however, the gel profiles showed qualitatively and quantitatively different pellicles, according to the origins of saliva and the bracket types. In particular, the binding of sIgA was more prominent in the pellicles from parotid saliva and the binding of cystatins was prominent in the pellicles from the form plastic brackets. This study indicates that numerous salivary proteins adhere to the orthodontic brackets and these salivary proteins adhere selectively according to bracket types and the types of the saliva.

Hot-wall epitaxial growth and characterization of $Cd_{1-x}Mn_xTe$ films (Hot-wall epitaxy 법에 의한 $Cd_{1-x}Mn_xTe$ 박막의 성장과 특성)

  • 황영훈;엄영호
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.1
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    • pp.126-131
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    • 1999
  • $Cd_{1-x}Mn_xTe$ thin films were grown on GaTs (100) substrates by hot-wall epitaxy method. From the XRD measurements, it was found that CdTe/GaAs (100)film was grown as a single crystal with the same growth plane of (100) and $Cd_{1-x}Mn_xTe$film as a poly crystal as Mn content was increased, and the lattice constant was decressed with the similar gradient of bulk crystal as x was increased. From the PL measurements, $L_1$line due to the exciton trapped on an acceptor and $L_2$line due to an exciton trapped on a shallow potential fluctuation were observed, and $L_1$line was observed only in $Cd_{0.91}Mn_{0.09}$te but it was disappeared probably due to a stronger lacalization of excitons with increasing alloy fluctuation.$L_2$line was dominant in case of $x{\ge}0.2$and for higher Mn contents the broad transition about 2.0eV associated to the 3d levels of the $Mn^{2+}$ ion dominated the PL spectrum, and the $L_2$ transition become weaker and weaker. For$x{\ge}0.4$, the transition line about 2.0eV due to $Mn^{2+}$ion showed no shift.

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