• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.200-203
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• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

• Journal of Korean Society of Transportation
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• v.12 no.2
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• pp.5-30
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• 1994

다이아몬드형 인터체인지는 고속도로와 노면가로가 교차할 경우 방향별 교통류를 처리하는데 보편적으로 사용하는 인터체인지이다. 인터체인지에 교통량의 부하가 과도해지 면 인터체인지내부의 교차로에서 발생한 대기차량이 종종 고속도로본선으로 역류하여 본선 의 교통소통에 문제를 야기하며 특히 고속도로의 안전에도 큰 위험요소가 된다. 본 논문은 과포화상태의 다이아몬드형 인터체인지의 교통신호제어를 다루며, 신호시간계획을 산출하는 동적 최적화모형(dynamic optimization model)을 제시한다. 최적화 모형은 지체도최소화를 목적함수로 하며, 함수계측법의 형태가 된다. 본 모형의 핵심은 신호제어에 따라 발생하는 대기차량길이를 모형화하여 대기차량길이가 정해진 상한치를 초과하지 않도록 하는 신호시 간계획을 산출하는데 있다. 제시된 동적모형은 다이아몬드형 인터체인지의 신호시간을 위하 여 널리 사용되는 PASSER III와 최적해를 상호 비교한다. TRAF-NETSIM을 통한 시뮬레이 션의 결과에 따르면 동적 모형이 우수한 결과를 보이며, 대기차량의 길이를 효과적으로 제 어하는 것으로 판명된다.

• Applied Chemistry for Engineering
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• v.8 no.1
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• pp.84-91
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• 1997

Diamond film was deposited on Mo substrate at atmospheric pressure using a combustion flame apparatus with the addition of $H_2$. With the substrate temperature, the nucleation density of the substrate was increased. At temperatures above $1000^{\circ}C$, some of diamond was partly converted into graphite and etched by hydrogen atoms. With an increase of the $C_2H_2/O_2$ ratio, the nucleation density was increased. But crystals were cauliflower-shaped and a large number of amorphous carbon were deposited. With the addition of $H_2$, the nucleation density of diamond was increased by the improvement of surface activity. Diamond film of high crystallinity was deposited by etching amorphous carbon. With an increase of deposition time, the thickness of diamond film was increased.

• Journal of the Korean Chemical Society
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• v.45 no.4
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• pp.351-356
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• 2001

Planarization of the free-standing diamond film surface as smooth as possible could be obtained by using the hydrogen plasma etching with the diffusion of the carbon species into the metal alloy (Fe, Cr, Ni). For this process, we placed the free-standing diamond film between the metal alloy and the Mo substrate like a metal-diamond-molybdenum (MDM) sandwich. We set the sandwich-type MDM in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. The sandwich-type MDM was heated over ca. 1000 $^{\circ}C$ by using the hydrogen plasma. We call this process as the hydrogen plasma etching with carbon diffusion process. After etching the free-standing diamond film surface, we investigated surface roughness, morphologies, and the incorporated impurities on the etched diamond film surface. Finally, we suggest that the hydrogen plasma etching with carbon diffusion process is an adequate etching technique for the fabrication of the diamond film surface applicable to electronic devices.

• The Journal of Korean Academy of Prosthodontics
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• v.49 no.1
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• pp.1-7
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• 2011

Purpose: The purpose of this study was to investigate the cutting efficiency of coarse grit diamond burs with air-turbine handpiece on natural tooth. Materials and methods: Four groups of coarse grit diamond bur were selected: Komet (A), Shofu (B), Premier (C), and Mani (D). The extracted maxillary central incisors were used, and ten cuts were made on each specimen, using the rotary diamond burs. The surface of each bur was measured at the upper, middle, and bottom of the bur with confocal laser scanning microscope and imaged with SEM. The data were analyzed with one-way ANOVA and t-test at the significance level of 0.05. Results: The surface roughness was measured. At the A diamond bur, the Sa values were $52.93\;{\mu}m$, $48.32\;{\mu}m$, $46.79\;{\mu}m$, $45.06\;{\mu}m$, and $43.43\;{\mu}m$ for control, test 1, 2, 3, and 4 respectively. The Sa values were $50.68\;{\mu}m$, $45.62\;{\mu}m$, $44.41\;{\mu}m$, $44.10\;{\mu}m$, and $42.46\;{\mu}m$ for B diamond bur, $58.02\;{\mu}m$, $55.53\;{\mu}m$, $52.22\;{\mu}m$, $48.26\;{\mu}m$, and $45.36\;{\mu}m$ for C diamond bur, and $50.11\;{\mu}m$, $46.73\;{\mu}m$, $45.46\;{\mu}m$, $42.58\;{\mu}m$, and $41.80\;{\mu}m$ for D diamond bur. Surface roughness after each bur use showed significant changes, but no significant difference was found in surface roughness change between bur systems. Conclusions: Surface roughness in the same bur system showed significant differences after each tooth preparation. However no statistically significant differences were found in surface roughness between bur systems. The SEM images between control and test 4 showed the abraded particles.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.85-86
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• 2007

상용으로 사용되고 있는 Sargent bath에 수십 나노크기의 다이아몬드 분말을 혼입하여 전기도금법에 의해 매우 우수한 표면 특성을 갖는 크롬 복합 도금층을 얻었다. 상기 복합 도금층은 순수 크롬 도금층의 미세 경도(Hy. 801)보다 높은 값(Hy. 920)을 나타내었고, 내마모성은 약 3-4배 뛰어난 성능을 보였다. 또한, NaCl 수용액에서 수행한 내식성 테스트에서는 크롬 복합 도금층이 순수 크롬 도금층대비 1/6 수준의 passive current를 가졌다. SEM을 통한 표면 형상 관찰 결과 크롬 도금층에 혼입된 나노 다이아몬드 분말은 단결정 혹은 다결정의 형태로 존재하였다.

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.346-354
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• 1993

The diamond particles and films were deposited on Si and qurtz substrate for $CH_4-H_2$ mixed gas by using RF plasma CVD. The temperature of substrate and the thinkness of films deposited on Si substrate were uniformly kept up by inserting metal plate between substrate and substrate holder. On increasing the reaction pressure in the same discharge power, the morphologies of films were changed from well-defind films to micro-crystal or ball-like. When diamond films were deposited on Si substrate from $CH_4-H_2$ mixed gas, we obtained well-defined diamond films at lower concentration than 0.5 vol% of $CH_4/H_2$. The deposited diamond films were indentified by SEM, XRD and Raman spectroscopy.

• Korean Journal of Materials Research
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• v.4 no.4
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• pp.385-392
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• 1994

The morphology variat~on of diamond thin films, grown by microwave plasma chem~cal vapor deposition, was investigated. With increasing substrate temperature from $550^{\circ}C$ to $750^{\circ}C$, the film morphology was changed from {111} to {100}, and then to cauliflower. The nondiamond components in the film increased with increasing temperature. Micro Raman spectrum suggested that the nondiamond components might exist along the boundaries of d~amond particles. The texture of diamond films, analyzed by X-ray diffraction, was varied from random orientation to <100> , and finally to <110> with increasing substrate temperature.

• Korean Journal of Materials Research
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• v.6 no.8
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• pp.833-840
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• 1996

Diamond thin films were deposited on p-type (100) Si wafers using MPECVD. Prior to deposition, ultrasonic striking was done to improve density of nucleation sites with dimond powder of 40~$60\mu$m size. Then diamond thin films were deposited at $^900{\circ}C$, 40Torr and 1000W microwave power using ${CH}_{4}$ and ${H}_{2}$ gases. The purity, the morphology and the microstructur'e and microdefects of diamond thin films were characterized by Raman spectroscopy, SEM and TEM, repectively. In Raman spectroscopy the peaks of non-diamond phase increased as ${CH}_{4}$, concentration increased. In SEM, the morphology of diamond thin films varied from crystalline to cauliflower as ${CH}_{4}$, concentration increased. As ${CH}_{4}$ con centration increased, the density of defects increased, with most defects being {III} twin. ${MTP}_{5}$, were formed with five (II]) planes. As these (Ill) Planes were twinned, ${MTP}_{5}$, represented five-fold symmetry. ]n the interfaces, defects in diamond thin films fanned out from small regions implying nucleation sites.

• Analytical Science and Technology
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• v.6 no.2
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• pp.149-156
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• 1993

The formation of the graphite spherulites has been studied experimentally in the Ni-C liquid under high pressure and temperature. In the diamond-stable region the graphite spherulites were formed and grew stably. They were not the polycrystalline particles but the single crystals of the fullerene-type, respectively, grown spirally with much imperfection. And they were proved to be in a mixture state of carbon atoms with $sp^2$- and $sp^3$-bonding by an Auger electron spectroscope and a high resolution transmission electron microscope. As the pressure decreased from the diamond-stable region to the graphite-stable region, the shape of the graphite particles changed gradually from the sphere to the flaky shape. The formation of the graphite spherulites was attributed to the stable existence of the carbon atoms with $sp^3$ bonding in the diamond-stable region. The formation of the large fullerene-type graphite spherulites with much imperfection is well agreed with Kroto's prediction for growth of the giant fullerene.