• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.546-552
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• 2010

The achievement of high gas permeability is a key factor in the development of porous SiC ceramics for applications of hot gas filter, vacuum chuck, and air spindle. However, few reports on the gas permeability of porous SiC ceramics can be found in the literature. In this paper, porous SiC ceramics were fabricated at temperatures ranging from $1600^{\circ}C$ to $1800^{\circ}C$ using the mixing powders of SiC, silicon, carbon and boron as starting materials. In some samples, expanded hollow microspheres as a pore former were used to make a cellular pore structure. It was possible to produce Si bonded SiC ceramics with porosities ranging from 42% to 55%. The maximum bending strength was 58MPa for the carbon content of 0.2 wt% and sintering temperature of $1700^{\circ}C$. The increase of air permeability was accelerated by addition of hollow microsphere as a pore former.

• 한국태양에너지학회:학술대회논문집
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• 2012.03a
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• pp.120-125
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• 2012

Daegu Solar Power Tower Plant of a 200 kW thermal capacity uses an open air receiver. An air receiver is generally based on the volumetric receiver concept with porous ceramic absorbers. Because absorber material is important in the volumetric receiver, ceramic materials with excellent thermal conductivity, high solar absorptivity and good thermal stability have been researched. KIER also developed SiC honeycomb absorber modules and evaluated performance of the modules at the KIER solar furnace. For performance evaluation, we made an open volumetric receiver containing the modules and measured the outlet temperature and the efficiency. It is demonstrated that performance of the KIER absorber is comparable to that of a reference absorber developed by DLR.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.539-543
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• 2014

Foam type porous silicon carbide ceramics were fabricated by a polymer replica method using polyurethane foam, carbon black, phenol resin, and silicon powder as raw materials. The influence of the C/Si mole ratio of the ceramic slurry and heat treatment temperature on the porous silicon carbide microstructure was investigated. To characterize the microstructure of porous silicon carbide ceramics, BET, bulk density, X-ray Powder Diffraction (XRD), and Scanning Electron Microscope (SEM) analyses were employed. The results revealed that the surface area of the porous silicon carbide ceramics decreases with increased heat treatment temperature and carbon content at the $2^{nd}$ heat treatment stage. The addition of carbon to the ceramic slurry, which was composed of phenol resin and silicon powder, enhanced the direct carbonization reaction of silicon. This is ascribed to a consequent decrease of the wetting angles of carbon to silicon with increasing heat treatment temperature.

• Journal of the Korean Ceramic Society
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• v.35 no.5
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• pp.486-492
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• 1998

Silicon carbide (SiC) thin films were deposited on the porous silicon substrates by chemical vapour de-position(CVD) using MTS as a source material. The deposited films were ${\beta}$-SiC with poor crystallity con-firmed by XRD measurement. It was considered that the films showed the mixed characteistics of cry-stalline and amorphous SiC where amorphous SiC where amorphous SiC played a role of buffer layer in interface between as-dep films and Si substrate. The buffer layer reduced lattice mismatch to some extent the generally occurs when SiC films are deposited on Si. The low temperature (10K) PL (phtoluminescence) studies showed two broad bands with peaks at 600 and 720 for the films deposited at 1100$^{\circ}C$ The maximum PL peak of the crystalline SiC was observed at 600 nm and the amrophous SiC of 720 nm was also confirmed. PL peak due the amorphous SiC was smaller than that of the crystalline SiC, PL of porous Si might be disapperared due to densification during heat treatment.