• 한국공작기계학회논문집
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• 제13권1호
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• pp.9-15
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• 2004

In this study, experiments were conducted with an ultra-precision machine, developed in domestic, to find the characteristics and the most suitable cutting conditions of ultra-precision machining. To maximize the performance of the machine, the machine was installed in a room that is protected from vibration and is maintained constant temperature and constant humidity. Selected work pieces are an aluminum-alloyed material, which has excellent corrosion resistance and has low deformation. The used tool is synthetic poly crystal diamond, which has excellent abrasion resistance and has low affinity. Four types of tool nose radius were used such as 0, 0.1, 0.2 and 0.4mm. Machining is performed with cutting speed of 500, 800 and 1000m/min., feed rate of 0.005, 0.008, 0.010mm/rev. and cutting depth of 0.0005, 0.0025 and 0.005mm respectively which can generally be used in the field as a cutting condition. As a method of evaluation, surface roughness was measured for each cutting condition, and reciprocal characteristics are computed for each tool nose radius, cutting speed, feed rate and cutting depth. As a result, the most suitable cutting condition and characteristics of ultra-precision machining were identified which can usefully be applied in the industrial field.

• 청정기술
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• 제18권1호
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• pp.43-50
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• 2012

태양전지 제조공정 중 잉곳의 절삭공정 후 진행되는 태양광 실리콘 웨이퍼 세정에 관한 연구를 수행하였다. 태양광 실리콘 웨이퍼는 잉곳의 생산방법에 따라 단결정과 다결정 웨이퍼로 분류되고, 절삭 방법에 따라서는 슬러리로 절삭한 웨이퍼와 다이아몬드 와이어로 절삭한 웨이퍼로 구분할 수 있으며, 이의 방법들에 따라 웨이퍼 표면과 오염원이 달라질 수 있다. 본 연구에서는 세정대상물에 따라 오염원과 웨이퍼 표면의 특성을 관찰하였고 적합한 세정제를 개발하여 물성 및 세정성을 평가하여 적용성을 확인하고자 하였다. 개발된 세정제로 세정한 웨이퍼는 XPS 분석결과 잔류 오염물질이 관찰되지 않았으며, 표면조직화 후 균일한 패턴을 형성함을 확인할 수 있었다. 또한, 개발된 세정제를 웨이퍼 생산현장에서 테스트를 진행하여 기존 세정제보다 우수한 세정결과를 확보하였다.

• 한국표면공학회지
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• 제49권3호
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• pp.301-306
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• 2016

The effects of nanotexturing and post-etching on the reflection and quantum efficiency properties of diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell have been investigated. The chemical solutions, which are acidic etching solution (HF-$HNO_3$), metal assisted chemical etching (MAC etch) solutions ($AgNO_3$-HF-DI, HF-$H_2O_2$-DI) and post-etching solution (diluted KOH at $80^{\circ}C$), were used for micro- and nano-texturing at the surface of diamond wire sawn (DWS) mc-Si wafer. Experiments were performed with various post-etching time conditions in order to determine the optimized etching condition for solar cell. The reflectance of mc-Si wafer texturing with acidic etching solution showed a very high reflectance value of about 30% (w/o anti-reflection coating), which indicates the insufficient light absorption for solar cell. The formation of nano-texture on the surface of mc-Si contributed to the enhancement of light absorption. Also, post-etching time condition of 240 s was found adequate to the nano-texturing of mc-Si due to its high external quantum efficiency of about 30% at short wavelengths and high short circuit current density ($J_{sc}$) of $35.4mA/cm^2$.