• Journal of Sensor Science and Technology
• /
• v.7 no.3
• /
• pp.154-162
• /
• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.26 no.4
• /
• pp.211-219
• /
• 2006

The UET(ultrasound excited thermography) for the ,eat-time diagnostics of the object employs an infrared camera to image defects of the surface and subsurface which are locally heated using high-frequency putted ultrasonic excitation. The dissipation of high-power ultrasonic energy around the feces of the defects causes an increase In temperature. The defect's image appears as a hot spot (bright IR source) within a dark background field. The UET for nondestructive diagnostic and evaluation is based on the image analysis of the hot spot as a local response to ultrasonic excited heat deposition. In this paper the applicability of VET for fast imaging of defect is described. The ultrasonic energy is injected into the sample through a transducer in the vertical and horizontal directions respectively. The voltage applied to the transducer is measured by digital oscilloscope, and the waveform are compared. Measurements were performed on four kinds of materials: SUS fatigue crack specimen(thickness 14mm), PCB plate(1.8 mm), CFRP plate(3 mm) and Inconel 600 plate (1 mm). A high power ultrasonic energy with pulse durations of 250ms Is injected into the samples in the horizontal and vertical directions respectively The obtained experimental result reveals that the dissipation loss of the ultrasonic energy In the vertical injection is less than that in the horizontal direction. In the cafe or PCB, CFRP, the size of hot spot in the vortical injection if larger than that in horizontal direction. Duration time of the hot spot in the vertical direction is three times as long as that in the horizontal direction. In the case of Inconel 600 plate and SUS sample, the hot spot in the horizontal injection was detected faster than that in the vertical direction

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.34 no.4
• /
• pp.109-116
• /
• 2024

β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1^o, 3^o, 4^o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.