• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.241-248
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• 2008

Gas turbine blades serviced for a period are usually repaired for reuse via "rejuvenation processes" including fluoride ion cleaning, brazing or welding, and recoating. Among these processes, the welding process is applied to rebuilt damaged parts of the blade in which welding materials being mostly Ni base superalloy are supplied in the form of powder or wire. When powder is used in the welding process, the uniform supply of powder is a very important factor for the uniformity of welding. According to our experience, the uniformity was very poor with the powder supply system only utilizing pressurized air flow. A new powder supply system was developed in which powder is supplied via air flow and simultaneously mechanically. The welding uniformity was much improved with this new system. In this study, the microstructure and mechanical properties of welded parts obtained from several kinds of powder using the new powder supply system were characterized.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.6
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• pp.383-388
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• 2019

High purity SiC fine powder with metal impurity contents of less than 1 ppm was synthesized by improved carbothermal reduction process, and the synthesized powder was used for SiC single crystal growth in RF heating PVT device at temperature above 2,100℃. In-situ x-ray image analyzer was used to observe the sublimation of the powder and single crystal growth behavior during the growth process. SiC powder was used as a source of single crystal growth, exhausted from the outside of the graphite crucible at the growth temperature and left graphite residues. During the growth, the flow of raw materials was concentrated in the middle and influenced the growth behavior of SiC single crystals. This is due to the difference in temperature distribution inside the crucible due to the fine powder. After the single crystal growth was completed, the single crystal ingot was cut into a 1 mm thick single crystal substrate and finely polished using a diamond abrasive slurry. A dark yellow 4H-SiC was observed overall of single crystal substrate, and the polycrystals generated in the outer part may be caused by the incorporation of impurities such as the bubble layer mixed in the process of attaching the seed crystal to the seed holder.