• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.1132-1132
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• 2004

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.175-177
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• 2005

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.214-215
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• 2005

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.05a
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• pp.8-8
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• 2004

펨토기술은 펨토초영역에서 일어나는 물리화학적 현상을 이용하여 공학적으로 이용하는 학문이다. 펨토초(femtosecond)는 시간의 단위로서 1펨토초는 1000조분의 1초($10^{-15}$)에 해당된다. 일반적으로 사람의 머리카락 두께는 약 100fm 인데 100 펨토초라고 하더라도 빛이 머리카락 두께의 1/2도 진행하지 못하는 극도의 짧은 시간에 불과하다. 이러한 펨토기술은 극초단 레이저의 발달로 가능해졌다. 1960년대 초 레이저 펄스폭을 줄일 수 있는 기술이 개발돼 나노초 시대가 열린 이후 60년대 중반에 펄스폭을 더욱 줄일 수 있는 모든 잠금기술이 개발돼 피코초 시대가 도래했다.(중략)

• Proceedings of the Korean Society of Laser Processing Conference
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• 2005.06a
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• pp.81-84
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• 2005

• 전기의세계
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• v.52 no.6
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• pp.55-59
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• 2003

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.655-656
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• 2006

We will provide the ultra-precise material processing technique with a femtosecond pulse laser system.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.10a
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• pp.271-271
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• 2003

• Proceedings of the Optical Society of Korea Conference
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• 2005.02a
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• pp.232-233
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• 2005

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.351-354
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• 2004

This work presents a simple and cost-effective approach for maskless fabrication of positive-tone silicon master for the replica molding of hyperfine elastomeric channel. Positive-tone silicon masters were fabricated by a maskless fabrication technique using the combination of nanoscratch by Nanoindenter ⓡ XP and XOH wet etching. Grooves were machined on a silicon surface coated with native oxide by ductile-regime nanoscratch, and they were etched in a 20 wt％ KOH solution. After the KOH etching process, positive-tone structures resulted because of the etch-mask effect of the amorphous oxide layer generated by nanoscratch. The size and shape of the positive-tone structures were controlled by varying the etching time (5, 15, 18, 20, 25, 30 min) and the normal loads (1, 5 mN) during nanoscratch. Moreover, the effects of the Berkovich tip alignment (0, 45$^{\circ}$) on the deformation behavior and etching characteristic of silicon material were investigated.