• Title/Summary/Keyword: 그래핀 나노리본

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Application of Graphene Nanoribbon Trench for C60 Fullerene Shuttle Device: Molecular Dynamics Simulations (풀러렌 셔틀 소자로 그래핀 나노리본 트렌치 응용에 관한 분자동력학 시뮬레이션 연구)

  • Kwon, Oh-Kuem;Kang, Jeong Won
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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    • v.8 no.1
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    • pp.887-894
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    • 2018
  • We investigated the position controlling C60 fullerene encapsulated into a graphene-nanoribbon trench via classical molecular dynamics simulations. The graphene-nanoribbon trench can provide nanoscale empty spaces, and a C60 encapsulated therein can be considered as media for a nanoelectromechanical shuttle device. The classical molecular dynamics simulations presented here provide information on the potential application of a graphene-nanoribbon trench in a C60 shuttle device. Driving forces applied to C60 resulted in its motion toward the edges of the graphene-nanoribbon trench, the suction forces induced at both edges were balanced with the driving forces, and finally, the C60 fullerene gradually settled on the edges of the graphene-nanoribbon trench after several oscillations. The results of the present simulation suggest the importance of graphene-nanoribbon trenches encapsulating fullerenes in a wide range of applications in the field of nanotechnology.

Synthesis of Graphene Nanoribbon via Ag Nanowire Template

  • Lee, Su-Il;Kim, Yu-Seok;Song, U-Seok;Kim, Seong-Hwan;Jeong, Sang-Hui;Park, Sang-Eun;Park, Jong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.565-565
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    • 2012
  • 그래핀(Graphene) 기반의 전계효과 트랜지스터(Field effect transistor) 응용에 있어, 가장 핵심적인 도전과제중 하나는 에너지 밴드갭(Energy bandgap)을 갖는 그래핀 채널의 제작이다. 그래핀은 에너지 밴드갭이 존재하지 않는 반금속(semi metal)의 특성을 지니고 있어, 그 본래의 물리적 특성을 지니고서는 소자구현에 어려움이 있다. 그러나 폭이 수~수십 나노미터인 그래핀 나노리본(Graphene nanoribbon)의 경우 양자구속효과(Quantum confinement effect)에 의하여 에너지 밴드갭이 형성되며, 갭의 크기는 리본의 폭에 반비례한다는 연구결과가 보고된 바 있다. 이러한 이유에서, 효과적이며 실현가능한 그래핀 나노리본의 제작은 필수적이다. 본 연구에서는 은 나노 와이어(Ag nanowire)를 기반으로 한 그래핀 나노리본의 합성을 연구하였다. 은 나노와이어를 열화학 기상증착법(Thermal chemical vapor deposition)을 이용, 아세틸렌(Acetylene, C2H2) 가스를 탄소공급원으로 하여 그래핀을 나노와이어 표면에 합성하였다. 합성과정에서 구조에 영향을 미치는 요인인 합성온도와 가스의 비율, 압력 등을 조절하여 최적화된 합성조건을 확립하였다. 합성된 나노리본의 특성을 라만분광법(Raman spectroscopy)과 주사전자 현미경(Scanning electron microscopy), 투과전자현미경(Transmission electron microscopy), 원자힘 현미경(Atomic force microscopy)를 통하여 분석하였다.

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CVD 및 PVD를 이용한 2차원 TMDC 성장연구

  • Jeong, Jong-Wan;Hussain, Sajjad;Kim, Hyeji
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.115.2-115.2
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    • 2014
  • 2004년에 최초의 2D 물질인 그래핀이 발표된 이후로 그래핀에 대한 관심이 매우 높다. 그래핀은 매우 높은 캐리어 이동도와 높은 광학 투과도, 높은 기계적 강도, 뛰어난 유연성등 다양하고, 뛰어난 물리적, 광학적, 기계적 성질을 갖고 있다. 이러한 뛰어난 성질로 인해 초고속 전자소자, 유연소자, 투명전극, 광학소자등 다양한 분야의 응용이 기대되어, 현재 물리학, 화학, 재료등 여러분야에서 활발히 연구가 진행되고 있다. 이러한 활발한 연구에도 불구하고 그래핀이 가진 기본적인 물리적 특성인 "제로 밴드갭" 특성으로 인해 낮은 소모전력이 요구되는 전자소자와 또한 광학소자로서의 응용에 한계를 보이고 있는 것이 사실이다. 그래핀의 기본적인 물리적 성질인 "제로 밴드갭"에서 탈출해 밴드갭을 증가하기 위해 나노리본, 바이레이어 그래핀등, 다양한 연구가 진행되고 있다. 하지만, 이를 통한 밴드갭의 증가량은 충분히 크지않아서 그래핀의 전자 및 광학적 응용이 아직까지는 매우 어렵다. 이러한 그래핀의 물질적 한계에 비추어 최근에 그래핀과 달리 충분한 밴드갭이 있어 반도체 특성을 가지는 Transition Metal DichalCogenide (TMDC) 물질에 대한 관심이 매우 높다. TMDC물질은 그래핀과 같이 2차원 물질로서 극히 얇으며, 또한 밴드갭을 가지고 있다. 따라서 실리콘과 같이 전자소자, 광학소자의 응용이 더욱 현실적으로 가능하다. 가장 대표적인 물질은 MoS2, WS2등을 들수 있다. TMDC 물질의 연구에서 가장 기본적으로 선행되어야할 연구분야는 바로 물질 성장에 있으며, 본 연구에서는 가장 대표적인 성장방법인 화학기상증착(CVD), 스퍼터링-물리적기상증착 (PVD)를 이용한 MoS2, WS2등의 TMDC의 성장연구에 대해 논의하고자 한다.

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Investigation of the mechanical and electrical properties of graphene nanoribbons-reinforced cementitious composites (그래핀 나노리본 보강 시멘트 복합체의 기계적 전기적 특성 분석)

  • Li, Pei-Qi;Liu, Jun-Xing;Bae, Sung-Chul
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2022.04a
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    • pp.184-185
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    • 2022
  • This study researched the effect of graphene nanoribbons (0.05 wt%) on cement-based materials' mechanical and electrical properties. The results were compared with the ordinary Portland cement (OPC) paste and OPC paste with the same content of carbon nanotubes. The experiment results showed that after curing for 28 days, the compressive and splitting tensile strength of the sample with graphene nanoribbons were increased by 17.8% and 6.6% compared to OPC paste, and its reinforced effect for cement-based materials was superior to carbon nanotubes. Besides, due to the excellent electrical properties of graphene nanoribbons, the sample reinforced by graphene nanoribbons had a lower electrical resistivity (135.5 Ω·m) than OPC paste (418.5 Ω·m) and paste with carbon nanotubes (175.5 Ω·m). This proved the promising application of graphene nanoribbons on cement-based materials.

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A study on the mechanical strength change of graphene nanoribbons enhanced cement paste at a high-temperature (그래핀 나노리본 혼입 시멘트 경화체의 고온 노출에 의한 기계강도 변화에 관한 연구)

  • Li, Pei-Qi;Liu, Jun-Xing;Bae, Sung-Chul
    • Proceedings of the Korean Institute of Building Construction Conference
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    • 2023.11a
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    • pp.125-126
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    • 2023
  • This work explores the effectiveness of graphene nanoribbons (GNRs) in modifying the fire resistance of cement paste. The GNRs are added to the ordinary Portland cement at 0.10 wt% of the cement, and the sample is heated to target temperatures after curing for 28 days. Subsequently, the variations of compressive strength and pore structure are inquired by compared to the control sample without nano reinforcing and the sample with the same amount of carbon nanotubes (CNTs).

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Design and Simulation Study on Three-terminal Graphene-based NEMS Switching Device (그래핀 기반 3단자 NEMS 스위칭 소자 설계 및 동작 시뮬레이션 연구)

  • Kwon, Oh-Kuen;Kang, Jeong Won;Lee, Gyoo-Yeong
    • Asia-pacific Journal of Multimedia Services Convergent with Art, Humanities, and Sociology
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    • v.8 no.6
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    • pp.939-946
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    • 2018
  • In this work, we present simple schematics for a three-terminal graphene-based nanoelectromechanical switch with the vertical electrode, and we investigated their operational dynamics via classical molecular dynamics simulations. The main structure is both the vertical pin electrode grown in the center of the square hole and the graphene covering on the hole. The potential difference between the bottom gate of the hole and the graphene of the top cover is applied to deflect the graphene. By performing classical molecular dynamic simulations, we investigate the nanoelectromechanical properties of a three-terminal graphene-based nanoelectromechanical switch with vertical pin electrode, which can be switched by the externally applied force. The elastostatic energy of the deflected graphene is also very important factor to analyze the three-terminal graphene-based nanoelectromechanical switch. This simulation work explicitly demonstrated that such devices are applicable to nanoscale sensors and quantum computing, as well as ultra-fast-response switching devices.

A Study of Dynamic Properties of Graphene-Nanoribbon Memory (그래핀 나노리본 메모리의 동적 특성에 대한 연구)

  • Lee, Jun Ha
    • Journal of the Semiconductor & Display Technology
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    • v.13 no.2
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    • pp.53-56
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    • 2014
  • In this work, we investigate the operational properties of this proposed device in detail via classical MD simulations. The bi-stability of the GNF(Graphene Nano-flake) shuttle encapsulated in bi-layer GNR could be achieved from the increase of the attractive energy between the GNRs when the GNF approached the edges of the GNRs. This result showed the potential application of the nano-electromechanical GNR memory as a NVRAM.

Facile Fabrication Process for Graphene Nanoribbon Using Nano-Imprint Lithography(NIL) and Application of Graphene Pattern on Flexible Substrate by Transfer Printing of Silicon Membrane (나노임프린트 리소그래피 기술을 이용한 그래핀 나노리본 트랜지스터 제조 및 그래핀 전극을 활용한 실리콘 트랜지스터 응용)

  • Eom, Seong Un;Kang, Seok Hee;Hong, Suck Won
    • Korean Journal of Materials Research
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    • v.26 no.11
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    • pp.635-643
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    • 2016
  • Graphene has shown exceptional properties for high performance devices due to its high carrier mobility. Of particular interest is the potential use of graphene nanoribbons as field-effect transistors. Herein, we introduce a facile approach to the fabrication of graphene nanoribbon (GNR) arrays with ~200 nm width using nanoimprint lithography (NIL), which is a simple and robust method for patterning with high fidelity over a large area. To realize a 2D material-based device, we integrated the graphene nanoribbon arrays in field effect transistors (GNR-FETs) using conventional lithography and metallization on highly-doped $Si/SiO_2$ substrate. Consequently, we observed an enhancement of the performance of the GNR-transistors compared to that of the micro-ribbon graphene transistors. Besides this, using a transfer printing process on a flexible polymeric substrate, we demonstrated graphene-silicon junction structures that use CVD grown graphene as flexible electrodes for Si based transistors.