• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.948-954
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• 2002

Porous reaction bonded SiC with high fracture strength was developed using Si melt infiltration method for use of the support layer in high temperature gas filter that is essential to develop the next generation power system such as integrated gasification combined cycle system. The porosity and pore size of porous RBSC developed in this study were in the range of 32∼36% and 37∼90 ${\mu}m$ respectively and the maximum fracture strength of porous RBSC fabricated was 120 MPa. The fracture strength and thermal shock resistance of porous RBSC fabricated by Si melt infiltration were much improved compared to those of commercially available porous clay bonded SiC due to the formation of the strong SiC/Si interface between SiC particles. The characteristics of pore structure of porous RBSC was varied depending on the amounts of residual Si as Well as the size of SiC particle used in green body.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.6
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• pp.258-263
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• 2020

Silicon carbide (SiC) fibers mainly fabricated from polycarbosilane, a ceramic precursor, are applied as reinforcing materials for ceramic matrix composites (CMCs) because of their high temperature oxidation resistance, tensile strength, and light weight. In this study, continuous SiC fibers used to fabricate rope-type flexible heating elements capable of generating high-temperature heat (> 650℃). For high-efficiency heating elements, the resistance of SiC fiber rope was measured by 2-point probe method according to the cross-sectional area and length. In addition, the fabrication conditions of rope-type SiC fiber heating elements were optimized by controlling the oxygen impurities and the size of crystal grains present in the amorphous SiC fiber. As a result, the SiC fiber heating element having a resistance range of about 100~200 Ω exhibited an excellent power consumption efficiency of 1.5 times compared to that of the carbon fiber heating element.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.269-277
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• 1998

The crystallization method determines the material quality and consequent device performance. This paper investigates the crystallization of a-Si:H films on various substrate materials and analyzes the crystallization effect with and without using eutectic forming metals. From the examinations of the various substrate materials, a metal Mo was selected for the a-Si:H films growth and subsequent crystallization of it. For a sample without any eutectic metal layer, we observed grain size of $0.8{\mu}m$ after $1100^{\circ}C$ anneal treatment. To reduce crystallization temperature, we used some of the eutectic forming metals such as Au, Al and Ag. Poly-Si films with grain size over $10{\mu}m$ and (111) preferential plains were achieved using a premetal layer of Au at an anneal temperature of $700^{\circ}C$. The various crystallization effects of eutectic metal thickness and type were investigated for photovoltaic (PV) device applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.1
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• pp.15-21
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• 2008

SiC has an excellent resistance to oxidation and corrosion, high temperature strength and good thermal conductivity. However, it is difficult to density because of its highly covalent bonding characteristics. Hot-press sintering process was applied to fabricate fully densified SiC ceramics with carbon and boron addition as a sintering additive. The addition of carbon improved the mechanical properties of SiC because it could induce a fine and homogeneous microstructure by the suppression of abnormal growth of SiC grain. Also, the addition of carbon could control the phase transformation of SiC. The phase transformation of 6H to 4H increased with sintering temperature but the addition of carbon decreased that kind of phase transformation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.6
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• pp.271-276
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• 2020

In this study, an amorphous SiC block was manufactured using polycarbosilane (PCS), an organosilicon polymer. The dense SiC blocks were easily fabricated in various shapes via pyrolysis at 1100℃, 1200℃, 1300℃, 1400℃ after manufacturing a PCS molded body using cured PCS powder. Physical and chemical properties were analyzed using a thermogravimetric analyzer (TGA), scanning electron microscope (SEM), energy dispersive spectroscopy (EDS), and universal testing machine (UTM). The prepared SiC block was decomposed into SiO and CO gas as the temperature increased, and β-SiC crystal grains were grown in an amorphous structure. In addition, the density and flexural strength were the highest at 1.9038 g/㎤ and 6.189 MPa of SiC prepared at 1100℃. The manufactured amorphous silicon carbide block is expected to be applicable to other fields, such as the previously reported microwave assisted heating element.

• The Korean Journal of Quaternary Research
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• v.25 no.2
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• pp.39-48
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• 2011

Phytolith analysis of sediments at the river mouth of valley bottom plains in Myosa-ri, Haman is performed. By the phytolith results, Phragmites and Oryza sativa are dominated in the lower horizon. An abundance of Paniceae and Andropogoneae indicates the active agricultural activities under wet conditions. Moreover, the results of archeological studies suggest the paddy fields in the Three States Age. The phytolith assemblages are dominated in the middle horizon and they gradually increase in the upper horizon. The rice cultivation layer is not proportional to total phytolith yield due to the dominance of Oryza sativa in the lower horizon. However, because the Oryza sativa are continuously observed over the entire sediments, it is suggested that there had been the agricultural activities for the entire periods.

• Composites Research
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• v.35 no.1
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• pp.23-30
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• 2022

Polycarbosilane(PCS) is an important precursor for melt-spinning the silicon carbide(SiC) fibers and manufacturing ceramics. The PCS is a metal-organic polymer precursor capable of producing continuous SiC fibers having excellent performance such as high-temperature resistance and oxidation resistance. The SiC fibers are manufactured through melt-spinning, stabilization, and heat treatment processes using the PCS manufactured by synthesis, purification, and control of the molecular structure. In this paper, we analyzed the effect of purification of unreacted substances and low molecular weight through solvent treatment of PCS and the effect of heat treatment at various temperatures change the polymerization and network rearrangement of PCS. Especially, we investigated the complex viscosity and structural arrangement of PCS precursors according to solvent treatment and heat treatment through the rheological properties.

• Journal of the Korean Geographical Society
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• v.44 no.6
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• pp.691-705
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• 2009

Phytolith analysis was made on a 660cm core from Lake Gyeongpo in the East Sea of Korean Peninsula to clarify the environmental change including climate and agricultural characteristics during the Holocene. From the results of phytolith analysis, six phytoliths assemblage zone(PAZ) were recognized from the base to the surface. PAZ I around 5,000 yr BP suggests the transition from the warm and dry to the cool and wet climatic conditions. The climate of PAZ II(ca. 4,000-2,000 BP) was kept on warm, but repeated between dry and wet conditions. PAZ III(2,000~1,000 yr BP) suggests the expansion of agricultural activities under the warm and humid climatic conditions due to the significant phytoliths production of Paniceae and Oryza sativa. While PAZ IV(1,000~500 yr BP) indicates very cool and dry conditions, PAZ V and IV suggest the warm-dry and cool-humid climatic conditions, respectively. Similar to the results of pollen analysis in the lake, the agricultural activities were recognized by PAZ III around 2,000 yr BP from the results of phytolith analysis, and the rice cultivations such as Oryza sativa have been expanded since 2,000 yr BP or later.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1993.12a
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• pp.35-38
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• 1993

질화규소는 고온에서 고강도, 고경도, 내열성, 내식성 등의 우수한 성질을 가지고 있기 때문에 열교환기, 공구, 기계밀봉(mechanical seal), 자동차용 엔진부품중의 피스톤 및 실린더 링 등의 중요한 부품의 재료로 크게 부목받고 있다. 이러한 질화 규소의 고온에서의 마모, 마찰거동이 중요한 부품으로의 활용범위를 넓히고 또한 기능성을 향상시키기 위해서 고온에서의 마모, 마찰거동에 대한 연구 및 이해가 절대적으로 필요하다. 공유결합성이 강한 질화규소의 소결시에 첨가되는 첨가제나 제조공정에서 들어갈 수 있는 불순물들은 소결체의 입자모양이나 입계에 존재하는 상의 점도를 변화시켜 고온에서의 기계적성질을 저하시키는 것으로 알려졌다.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.250-251
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• 2013

탄화규소(SiC)는 물리적 성질이 뛰어나 여러 전자기기에 다양한 활용 가능성이 제시되고 있다. 이 논문에서는 2D 구조의 탄화규소 벌집 구조에 대하여 전자 구조 계산을 수행하고 탄소와 규소의 2D 구조체와 전자구조적 차이점을 논의했다. 단원자 2D 구조와는 달리 탄화규소의 합성 구조는 반도체의 성질을 띄는 것으로 나타났고, 이는 두 원자 간의 전기음성도 차이로 인한 전자의 국소화 현상 때문인 것으로 분석되었다.