• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.344-344
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• 2013

칩의 크기가 감소함에 따라 RC (Resistance, Capacitance) 지연, 전력소비증가 및 신호잡음 등이 문제가 되어왔다. RC지연 문제는 배선에 알루미늄 보다 비저항이 낮은 구리를 사용하고 절연막으로 유전상수가 낮은 물질을 사용하여 개선될 수 있다. 이와 같은 맥락에서 점차 저유전상수 박막의 필요성은 증가하고 있다. 그러므로 이를 개선하기 위해 저 유전상수 값을 가지는 물질을 개발 혹은, UV나 플라즈마 그리고 열을 이용하여 처리하는 연구가 절실히 요구되고 있으며, 현재 많은 연구가 진행되고 있다. 이 논문에서 저유전박막은 HDP-CVD (High Density Plasma Chemical Vapor Deposition) 시스템에서 (CyOz)-SiHx와 O2의 비율을 각각 변화시키면서 증착 되었다. (CyOz)-SiHx와 O2의 비율은 60/150, 60/180, 60/210, 60/240로 증가하면서 증착하였다. 그리고 surface profilometer을 이용하여 박막의 증착율을 측정하고 LCR meter를 이용하여 정전용량을 측정하여 유전상수 값을 얻었다. 박막의 화학적 조성과 구조는 FTIR (Fourier Transform Infrared Spectroscopy)로 측정하였다. 박막의 유동 특성은 SEM (Scanning electron microscope) 이미지로 살펴보았다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.79-83
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• 2001

In order to compare the barrier properties of Ta-N/Si(001) with those of Ta-N/Ta/Si(001), we studied structural properties of films grown by RF magnetron sputtering with various $Ar/N_2$ ratios. To evaluate the barrier properties, the samples were annealed in a vacuum chamber. Ex-situ x-ray scattering measurements were done using an in-house x-ray system. With increasing nitrogen ratio in Ta-N/Si(001), the barrier property of Ta-N/Si(001) was enhanced, finally failed at $750^{\circ}C$ due to the crystallization and silicide formation. Compared with Ta-N/Si(001), Ta-N/Ta/Si(001) forms silicides at $650^{\circ}C$. However it does not crystallize even at $750^{\circ}C$. With increasing nitrogen composition in Ta-N/Ta/Si(001), the formation of tantalum silicide was reduced and the surface roughness was improved. To observe the surface morphology of Ta-N/Ta/Si(001) during annealing, we performed an in-situ x-ray scattering experiment using synchrotron radiation of the 5C2 at Pohang Light Source(PLS). Addition of Ta layer between Ta-N and Si(001) improved the surface morphology and reduced the surface degradation at high temperatures. In addition, increasing $N_2/Ar$ flow ratio reduced the formation of tantalum silicide and enhanced the barrier properties.

• Korean Journal of Materials Research
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• v.23 no.11
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• pp.661-665
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• 2013

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of $CuSO_4{\cdot}5H_2O$ as the main metal source, $NaH_2PO_2{\cdot}H_2O$ as the reducing agent, $C_6H_5Na_3O_7{\cdot}2H_2O$ and $NH_4Cl$ as the complex agents, and $NiSO_4{\cdot}6H_2O$ as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using $NH_4OH$. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at $70^{\circ}C$. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.132-132
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• 2000

Cu는 Al에 비하여 낮은 저항(1.8 $\mu$$\Omega$-cm)과 높은 EM 저항성을 가지고 있어 미래의 고속 ULSI 배선물질로 그 중요성이 더욱 증가되고 있으며, 현재까지 많은 연구가 진행되고 있다. 따라서, 본 논문에서는 이러한 방법들을 고려하여 CVD Cu의 문제점인 낮은 성장률의 개선과 Cu 박막의 특성을 향상하고자 수소 플라즈마 공정을 이용하여 plasma 전처리가 초기 Cu 핵생성에 미치는 영향에 대하여 연구하였다. 본 실험에 사용된 장비는 Cu RPCVD/MOCVD이다. 초기 Cu 핵의 생성에 있어서의 수소 플라즈마의 효과를 조사하기 위하여 다음과 같은 3가지의 방법으로 행하였다. 첫 번째는 Cu 박막 형성에서 플라즈마를 사용하지 않은 방법, 두 번째는 플라즈마 전처리공정을 행한 뒤, Cu 박막 증착시 플라즈마는 사용하지 않은 방법, 세 번재는 플라즈마 전처리공저을 행한 뒤 Cu 증착시에도 플라즈마를 사용한 방법이다. 이 세가지 방법의 핵생성 차이를 분석하기 위해서 각각 10초, 20초, 40초 증착시킨 후 grain의 크기와 개수를 비교하였다. 또한 플라즈마의 power에 따른 Cu 핵생성율도 조사하였다. 수소 전처리동안 working pressure는 10분 동안 1 torr로 유지되었으며 substrate의 온도는 20$0^{\circ}C$, r.f.power는 100watt로 설정하였다. Cu RPCVD의 증착조건은 r.f.power는 10watt, substrate의 온도는 20$0^{\circ}C$, gas pressure는 1 torr, Ar carrier gas는 50sccm, hydrogen processing gas는 100sccm, bubbler 온도는 4$0^{\circ}C$, gas line의 온돈느 6$0^{\circ}C$, shower head의 온도는 $65^{\circ}C$로 설정하였다. 증착된 Cu 박막은 SEM, XRD, AFM를 통해 제작된 박막의 특성을 비교.분석하였다. 초기 plasma 처리를 한 경우에는 그림 1에서와 같이 현저히 증가한 초기 구리 입자들이 관측되었으며, 이는 도상 표면에 활성화된 catalytic site의 증가에 기인한다고 보여진다. 이러한 특성은 Cu films의 성장률을 향상시키고, 또한 voids를 줄여 전기적 성질 및 surface morphology를 향상시키는 것으로 나타났다.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.3 no.4
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• pp.249-260
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• 1998

To understand the attachment of micro algae and their subsequent growths on artificial surfaces immersed in seawater, the relationship between attachment of diatoms on the immersed artificial substrates and species pool in the surrounding water was investigated. We used acryl slides for the study of diatom attachment and examined the surrounding water samples collected in Incheon Harbour from July 1995 to February 1997. Variations of species composition and abundances by exposure time in seawater were investigated during the early phase of biofilm formation on various substrates, e.g. glass, acryl, titanium, copper and antifouling paint-treated slides. Immigration rates of diatoms to acryl slides during spring and winter were significantly correlated with the abundance of benthic diatoms in surrounding water ($r^2$=0.78, p<0.01, n=42), suggesting that immigration rates were affected by variations of benthic diatom abundances in surrounding water. Immigration coefficient of monoraphid diatoms was 5 times higher than that of biraphid diatoms, but relative abundance of monoraphid diatoms was 3 times lower than that of biraphid diatoms on acryl slides in spring. In winter, immigration coefficient and relative abundance of centric diatoms were higher compared to other raphe forms. These results suggest that the attachment of diatoms seems to be caused by the abundance and immigration coefficients of benthic diatoms in surrounding water. Pennate diatoms predominantly attached to all artificial surfaces throughout all experimental periods. Interestingly, centric diatoms predominantly attached to all artificial surfaces in winter. Hantzschia virgata, Licmophora abbreviata and Melosira nummuloides appeared dominantly on antifouling paint-treated slides, probably being tolerant of the antifouling paint. During incubations, the abundance of attached diatoms increased exponentially on glass, titanium and acryl slides with exposure time. The maximum abundance was highest on glass slide, followed by acryl, titanium, copper and antifouling paint-treated slides. The growth rates of attached diatom community on all artificial surfaces were higher at temperature of $24-25^{\circ}C$ than that of $2-3^{\circ}C$. The growth rate of attached diatoms on glass slide was generally higher compared to other slides during the study period. Dominant morphotypes of observed species with exposure time in seawater were prostrate form Amphora coffeaeformis, fan shape Synedra tabulata, stalk type Licmophora paradoxa and chain type M. nummuloides. A micro-succession in the attached microalgal community was observed. The composition of dominant species seems to be the result of species-specific response to gradually limited space with development of microalgal film.

• Fire Science and Engineering
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• v.25 no.6
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• pp.83-88
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• 2011

This study presented the structure and characteristics of vinyl cords used for wiring electric equipment and appliances and analyzed the photographs of damaged flat-type vinyl cords (VFF, $1.25mm^2$) and the metallic cross-sectional structure of melted conductors. Normal VFFs were made by twisting several strands together and the surface of the conductor was red brown. In addition, from the analysis of the metallic structure of the conductor, it was found that its grains had been elongated. The surface of a VFF damaged by normal flame showed no sheen with carbonized insulation material fused on the conductor surface. In addition, from the analysis of the cross-sectional structure of the melted area, it was found that voids of a certain shape were formed on it but that the cord's own elongation structure could not be checked. The cross-sectional analysis of the melted conductor damaged by the external flame applied to a VFF to which electric current was being applied showed no elongation structure for each cord, and revealed that irregular voids and a columnar structure had grown. The surface of the VFF damaged by overcurrent was uniformly carbonized and the cross-sectional structure analysis of the melted conductor revealed that the dendritic structure had grown. The analysis of the characteristics of the VFF melted by short-circuit showed that even though some part of the surface was contaminated, it showed little sheen and that the area rebounded by melting was round in shape. In addition, the cross-sectional structure analysis using a metallurgical microscope showed the boundary surface and columnar structure and revealed an amorphous structure like normal copper at areas other than the melted conductor.

• Korean Chemical Engineering Research
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• v.45 no.5
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• pp.466-472
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• 2007

A technology platform for wafer-level three-dimensional integration circuits (3D-ICs) is presented, and that uses wafer bonding with low-k polymeric adhesives and Cu damascene inter-wafer interconnects. In this work, one of such technical platforms is explained and characterized using a test vehicle of inter-wafer 3D via-chain structures. Electrical and mechanical characterizations of the structure are performed using continuously connected 3D via-chains. Evaluation results of the wafer bonding, which is a necessary process for stacking the wafers and uses low-k dielectrics as polymeric adhesive, are also presented through the wafer bonding between a glass wafer and a silicon wafer. After wafer bonding, three evaluations are conducted; (1) the fraction of bonded area is measured through the optical inspection, (2) the qualitative bond strength test to inspect the separation of the bonded wafers is taken by a razor blade, and (3) the quantitative bond strength is measured by a four point bending. To date, benzocyclobutene (BCB), $Flare^{TM}$, methylsilsesquioxane (MSSQ) and parylene-N were considered as bonding adhesives. Of the candidates, BCB and $Flare^{TM}$ were determined as adhesives after screening tests. By comparing BCB and $Flare^{TM}$, it was deduced that BCB is better as a baseline adhesive. It was because although wafer pairs bonded using $Flare^{TM}$ has a higher bond strength than those using BCB, wafer pairs bonded using BCB is still higher than that at the interface between Cu and porous low-k interlevel dielectrics (ILD), indicating almost 100% of bonded area routinely.