• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2202-2207
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• 2007

The present article investigates experimentally and theoretically thermal and optical characteristics of thin film structures through measurement of thermal conductivity of Pyrex 7740 and reflectance in silicon thin film. The $3{\omega}$ method is used to measure thermal conductivity of very thin film with high accuracy and the optical characteristics in thin films are studied to examine the influence of incidence angle of light on reflectance by using the CTM(Characteristics Transmission Method) and the 633 nm He-Ne laser reflectance measurement system. It is found that the estimated reflectance of silicon show good agreement with experimental data. In particular, the present study solves the EPRT(Equation of Phonon Radiative Transport) which is based on Boltzmann transport equation for predicting thermal conductivity of nanoscale film structures. From the results, the measured thermal conductivity is in good agreement with the previous published data. Moreover, thermal conductivities are estimated for different film thickness. It indicates that as film thickness decreases, thermal conductivity decreases substantially due to internal scattering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.218-218
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• 2007

고체 전해질로서 $CsH_2PO_4$결정은 $230^{\circ}C$ 이상에서 전기전도도가 $10^{-2}\;{\Omega}^{-1}cm^{-1}$의 값에 도달하는 초양성자(Superprotonic) 상태로 상전이를 한다. 이러한 이유로 $CsH_2PO_4$ 결정은 $230^{\circ}C$ 부근에서 사용할 수 있는 연료전지로 개발되어왔다. 실용적인 면에서 단결정의 경우보다 다결정의 물성 및 응용 연구가 많았는데, 입자 크기에 따른 체계적인 연구는 잘 이루어지지 않았다. 본 발표에서는 $CsH_2PO_4$ 다결정을 합성하여 SEM 및 micro Raman spectra를 조사하였다. SEM의 결과 입자들의 평균 크기는 100 nm 이었으며, micro Raman spectra는 Bulk $CsH_2PO_4$의 spectra 와 큰 차이를 보이지 않았다. $PO_4$의 내부진동은 거의 같은 주파수대를 보여주나, $300\;cm^{-1}$이하의 저주파 수 영역에서는 광학적 포논의 픽이 잘 보이지 않았다. 그 원인이 micro Raman 장치의 측정 특성인지, 물리적 변화인지는 확실치 않다.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.526-531
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• 1998

A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.49-55
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• 2001

ZnO films were fabricated on p-type Si(100) wafer ITO glass and quartz glass by the sol-gel process using zinc acetate dihydrate as starting material. A homogeneous and stable solution was prepared by dissolving the zinc acetate dihydrate in a solution of 2-methoxyethanol and monoethanolamine (MEA). ZnO films were deposited by spin-coating at 2800 rpm for 25 s and were dried on a hot plate at $250^{\circ}C$ for 10 min. Crystallization of the films was carried out at $400^{\circ}C$~$800^{\circ}C$ for 1 h in air. X-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), UV-vis transmittance spectroscopy, FTIR transmittance spectroscopy and Photoluminescence (PL) spectroscopy measurements have been used to study the structural and optical properties of the films. ZnO films highly oriented along the (002)plane were obtained. In all cases the films were found to be transparent (above 70%) in visible range with a sharp absorption edge at wavelengths of about 380nm, which is very close to the intrinsic band-gap of ZnO(3.2 eV). The low temperature band-edge photoluminescence revealed a complicated multi-line structure in terms of bound exciton complexes and the phonon replicas.