• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.89-93
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• 2017

GaN single crystals were grown by controlling of various processing parameters such as growing temperature, V/III ratio and growing rate. We optimized thickness of bulk GaN single crystal by analyzing defect of surface and inside of the GaN single crystal for application to high brightness and power device. 2-inch bulk GaN single crystals were grown by HVPE (hydride vapor phase epitaxy) on sapphire and their thickness was 0.3~7.0 mm. Crystal structure of the grown bulk GaN was analyzed by XRD (X-ray diffraction). The surface characteristics of the grown bulk GaN were observed by OM (optical microscope) and SEM (scanning electron microscopy) with measuring EPD (etch pits density) of the GaN crystals.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.89-96
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• 2006

Recent ULSI and multilevel structure trends in microelectronic devices minimize the line width down to less than $0.25{\mu}m$, which results in high current densities in thin film interconnections. Under high current densities, an EM(electromigration) induced failure becomes one of the critical problems in a microelectronic device. This study is to improve thin film interconnection materials by investigating the EM characteristics in Ag, Cu, Au, and Al thin films, etc. EM resistance characteristics of Ag, Cu, Au, and Al thin films with high electrical conductivities were investigated by measuring the activation energies from the TTF (Time-to-Failure) analysis. Optical microscope and XPS (X-ray photoelectron spectroscopy) analysis were used for the failure analysis in thin films. Cu thin films showed relatively high activation energy for the electromigration. Thus Cu thin films may be potentially good candidate for the next choice of advanced thin film interconnection materials where high current density and good EM resitance are required. Passivated Al thin films showed the increased MTF(Mean-time-to-Failure) values, that is, the increased EM resistance characteristics due to the dielectric passivation effects at the interface between the dielectric overlayer and the thin film interconnection materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.416-417
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• 2013

최근 질화물계 발광다이오드(light emitting diode, LED) 소자는 핸드폰, 스마트 TV 등의 디스플레이 분야와 실내외조명, 감성조명, 특수조명 등의 조명분야에 그 응용분야가 급속히 확대되고 있다. 이러한 LED 소자는 에너지 절감과 친환경에 장점을 가지고, 가까운 미래에 조명시장을 대체할 것으로 예상된다. 이를 만족하기 위해서는 현재보다 더 높은 효율을 갖는 LED 개발이 요구되어지고 있는 상황이다. 일반적으로 질화물계 LED 소자의 효율은 내부양자 효율, 광추출 효율 등으로 나타낼 수 있다. 내부 양자효율은 성장된 결정의 질의 개선 및 다층의 이종접합 또는 다중양자우물 구조와 같이 활성층의 캐리어 농도를 높이는 접합구조로 설계되어 80% 이상의 효율을 나타낸다. 그러나 광추출 효율은 이에 미치지 못하고 있다. 이는 반도체 재료의 높은 굴절률로 인하여 빛이 외부로 탈출하지 못하고 내부로 반사되거나 물질 안에서 흡수가 일어나기 때문이다. 따라서 이러한 문제를 해결하기 위해 많은 연구 그룹들은, 표면에 패턴 형성하여 빛의 전반사를 줄여 그 효율을 올리는 연구결과를 보고하고 있다. 대표적인 방법으로는 wet etching, 전자빔 리소그라피, 나노임프린트 리소그라피, 레이저 홀로 리그라피, 나노스피어 리소그라피 등이 사용되고 있다. 이 중, 나노스피어 리소그라피는 폴리스틸렌 혹은 실리카 등과 같은 나노 크기의 bead를 사용하여 반도체 기판 표면에 단일층으로 고르게 코팅한 마스크로 사용하여 패턴을 주는 방법이다. 이 방법의 장점으로는 대면적에 균일한 패턴을 형성할 수 있고, 공정비용이 저렴하여 양산하기에 적합하다는 특징이 있다. 나노스피어 리소그라피를 통해서 표면에 생성된 패턴 모양의 각도에 따라서, 식각되는 깊이에 변화에 따라 실험한 결과들은 있지만, 아직까지 크기가 다른 나노입자들의 마스크 이용하여 형성된 패턴 밀도에 따른 광 추출 효과에 대한 연구가 많이 미흡하다. 따라서 본 연구에서는 다양한 크기의 실리카로 패턴을 형성시켜 패턴 밀도에 대한 광추출 효율의 효과에 대해서 조사하였다. 실험 방법으론, DI, 에탄올, TEOS, 암모니아의 순서대로 그 혼합 비율을 조정하여 100, 250, 500 nm 크기의 나노입자를 합성하였고 이것을 질화물계 LED의 표면 위에 단일층으로 스핀코팅 방법을 통해 코팅을 하였다. 그 후 ICP-RIE 방법으로 필라 패턴을 형성하였는데, 그 결과 100 nm SiO2 입자를 이용한 경우 $4.5{\times}10^9$/$cm^2$, 250 nm의 경우 $1.4{\times}10^9$/$cm^2$, 500 nm의 경우 $0.4{\times}10^9$/$cm^2$의 패턴의 밀도를 보여주었다(Fig. 1). 패턴의 밀도에 따라 전계광학적 특성을 확인하여 보았는데, 그 결과는 평평한 표면과 비교하였을 때 100 nm에서 383%, 250 nm에서는 320%, 500 nm에서는 244% 상승하는 결과를 보여주었다(Fig. 2). 이번 실험을 통해서 LED의 광추출 효율은 표면 모양과 깊이 뿐 아니라 밀도가 커질수록 그 효율이 올라간다는 사실을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.380-386
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• 2006

In this study, we had designed and fabricated the plasma focus device which can generate the light source for EUV(Extreme Ultra Violet) lithography. And we also have investigated the basic electrical characteristics of currents, voltages, resistance and inductance of this system. Voltage and current signals were measured by C-dot and B-dot probe, respectively. We applied various voltages of 1.5, 2, 2.5 and 3 kV to the anode electrode and observed voltages and current signals in accordance with various Ar pressures of 1 mTorr to 100 Torr in diode chamber. It is observed that the peak values of voltage and current signals were measured at 300 mTorr, where the inductance and impedance were also estimated to be 73 nH and $35 m{\Omega}$ respectively. The electron temperature has been shown to be 13000 K at the diode voltage of 2.5 kV and this gas pressure of 300 mTorr. It is also found that the ion density Ni and ionization rate 0 have been shown to be $N_i = 8.25{\times}10^{15}/cc$ and ${\delta}$= 77.8%, respectively by optical emission spectroscopy from assumption of local thermodynamic equilibrium(LTE) plasma.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.252-255
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• 2014

Indium tin oxide (ITO) films with various oxygen partial pressure from 0 to $6{\times}10^{-5}$ Pa were prepared onto polyethylene terephthalate (PET) using RF magnetron sputtering at room temperature. The structural, electrical and optical properties of the grown ITO films were investigated as a function of the oxygen partial pressure. The amorphous nature of the ITO films was dominant at the partial pressure below $1{\times}10^{-5}$ Pa and the degree of crystallinity increased as the oxygen concentration increased further. This structural change comes with the increased carrier concentration and reduction of the electrical resistivity down to $9.8{\times}10^{-4}{\Omega}{\cdot}cm$. The average transmittance (at 400~800 nm) of the ITO deposited on the PET substrates increased as the oxygen partial pressure increased and transmittance above 80 % was achieved with the partial pressure of $4{\times}10^{-5}$ Pa. The results show that the choice of optimal oxygen partial pressure can present improved film crystallinity, the increased carrier concentration, and the enhancement in the electrical conductivity.

• Journal of the Korean Association of Geographic Information Studies
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• v.23 no.2
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• pp.21-35
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• 2020

Vegetation information is a very important factor used in various fields such as urban planning, landscaping, water resources, and the environment. Vegetation varies according to canopy density or chlorophyll content, but vegetation vitality is not considered when classifying vegetation areas in previous studies. In this study, in order to satisfy various applied studies, a study was conducted to set a threshold value of vegetation index considering vegetation vitality. First, an eBee fixed-wing drone was equipped with a multi-spectral camera to construct optical and near-infrared orthomosaic images. Then, GIS calculation was performed for each orthomosaic image to calculate the NDVI, GNDVI, SAVI, and MSAVI vegetation index. In addition, the vegetation position of the target site was investigated through VRS survey, and the accuracy of each vegetation index was evaluated using vegetation vitality. As a result, the scenario in which the vegetation vitality point was selected as the vegetation area was higher in the classification accuracy of the vegetation index than the scenario in which the vegetation vitality point was slightly insufficient. In addition, the Kappa coefficient for each vegetation index calculated by overlapping with each site survey point was used to select the best threshold value of vegetation index for classifying vegetation by scenario. Therefore, the evaluation of vegetation index accuracy considering the vegetation vitality suggested in this study is expected to provide useful information for decision-making support in various business fields such as city planning in the future.

• The Korean Journal of Malacology
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• v.25 no.2
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• pp.145-151
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• 2009

The ultrastructural changes in germ cells during oogenesis of the melania snail, Semisulcospira libertina libertina have been investigated by light and electron microscopy. The ovary is located on the surface of the hepatopancreas in the spiral posterior region. The ovary exhibited greenish color in the gonadal mature season. The ovary was composed of a number of oogenic follicles. Oogenesis was divided into five stages with histological features: (1) oogonia, (2) previtellogenic, (3) initial vitellogenic, (4) active vitellogenic, and (5) mature stages. Oogonia were oval in shape, $4-6\;{\mu}m$ in diameter, and had a large nucleus. Previtellogenic oocytes were about $20\;{\mu}m$ in diameter and the cytoplasm reacted with hematoxylin in H-E satin. Initial vitellogenic stage, oocytes were $60-80\;{\mu}m$ in diameter, and small yolk granules of low electron density are scattered in the cytoplasm. Oocytes in the initial vitellogenic stage were connected with ovarian follicle by egg stalk. Active vitellogenic oocyte were $100-120\;{\mu}m$ in diameter. Electron density, size and quantity of yolk granules that are distributed in the cytoplasm have increased from the previous stage. Result of TEM observations, the oocyte contains well-developed Golgi complex, endoplasmic reticula and tubular mitochondria in the cytoplasm. Cytoplasm of mature oocyte was filled with proteinaceous yolk globules of high electron density. In this stage, the length of microvilli in the egg envelope was approximately $1.1\;{\mu}m$.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.4
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• pp.393-400
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• 2012

In recent years, nano-structured thin film systems are often applied in industries such as MEMS/NEMS device, optical coating, semiconductor or like this. Thin films are used for many and varied purpose to provide resistance to abrasion, erosion, corrosion, or high temperature oxidation and also to provide special magnetic or dielectric properties. Quite a number of articles to evaluate the characterization of thin film structure such as film density, film grain size, film elastic properties, and film/substrate interface condition were reported. Among them, the evaluation of film adhesive to substrate has been of great interest. In this study, we fabricated the polymeric thin film system with different adhesive conditions to evaluate the adhesive condition of the thin film. The nano-structured thin film system was fabricated by spin coating method. And then V(z) curve technique was applied to evaluate adhesive condition of the interface by measuring the surface acoustic wave(SAW) velocity by scanning acoustic microscope(SAM). Furthermore, a nano-scratch technique was applied to the systems to obtain correlations between the velocity of the SAW propagating within the system including the interface and the shear adhesive force. The results show a good correlation between the SAW velocities measured by acoustic spectroscope and the critical load measured by the nano-scratch test. Consequently, V(z) curve method showed potentials for characterizing the adhesive conditions at the interface by acoustic microscope.

• Journal of Korean Society for Geospatial Information Science
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• v.19 no.4
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• pp.119-126
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• 2011

During precise survey on the top of High rise buildings and civil structures, optical surveying equipments like a Total Station are not recommended to use because of some reasons that uneasier alignment with reflectors located at the top of building, increasing error depends on increasement of observation distance and unavailable dynamic positioning etc. Recently various GPS positioning methods have been applied to this job however almost of them are post-processing method which is required much longer time during for whole process includes stake-out, cross checking, fixing positions and final inspections. Therefore, in this study, we applied with RTK surveying system which allows stake-out and inspection in realtime to avoid delaying of construction schedule and also applied with Quasi Static RTK measurement and network adjustment to get a high accuracy within a few millimeters in structure positioning to achieve a successful management for process and quality control of the project. As a result, very high accurate surveying for structures within approx. 2mm in realtime has been achieved when surveyor conduct a network adjustment using least square method for 4 base lines created by Quasi Static RTK data and we expect this method will be applied to construction survey for high rise buildings and civil structures in the future.

• Tunnel and Underground Space
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• v.26 no.1
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• pp.24-31
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• 2016

Recently, many studies have been conducted to use fixed-wing and rotary-wing unmanned aerial vehicles (UAVs, Drones) for topographic surveying in open-pit mines. Because the fixed-wing and rotary-wing UAVs have different characteristics such as flight height, speed, time and performance of mounted cameras, their results of topographic surveying at a same site need to be compared. This study selected a construction site in Yangsan-si, Gyeongsangnam-do, Korea as a study area and compared the topographic surveying results from a fixed-wing UAV (SenseFly eBee) and a popular rotary-wing UAV (DJI Phantom2 Vision+). As results of data processing for aerial photos taken from eBee and Phantom2 Vision+, orthomosaic images and digital surface models with about 4 cm grid spacing could be generated. Comparisons of the X, Y, Z-coordinates of 7 ground control points measured by differential global positioning system and those determined by eBee and Phantom2 Vision+ revealed that the root mean squared errors of X, Y, Z-coordinates were around 10 cm, respectively.