• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.341-350
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• 1996

The CdS thin films are grown on quartz plate by hot wall epitaxy. The source and substrate temperature is $590^{\circ}C$ and $400^{\circ}C$ respectively, and thickness of the film is $2.5\;\mu\textrm{m}$. Using extrapolation method of X-ray diffraction patterns for the CdS thin film, it was found hexagonal structure whose lattice constant a and c were $4.137\;{\AA}$ and $6.713\;{\AA}$, respectively. Hall effect on this sample was measured by the method of van der Pauw and studied on cattirer density and mobility depending on temperature. From hall data, the mobility was likely to be decreased by piezoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore the applicability as a photoconductive cell we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Cu vapor the photoconductive characteristics are the best. Then we obtained the sensitivity of 0.99, the value of pc/dc of $9.42{\times}10^{6}$, the MAPD of 318 mW, and the rise and decay time of 10 ms and 9 ms, respectively.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.157-157
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• 2003

수평 전기로에서 CdIn2Te4 다결정을 용융법으로 합성하고 Bridgman법으로 tetragonal structure의 c축에 평행한 CdIn2Te4 단결정을 성장시켰다. c축에 평행한 시료의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 spectra에 의해 band gap Eg(T)는 varshni공식에 따라 계산한 결과 1.4753eV-(7.78$\times$$10^{-3}$eV/K)T$^2$/(T+2155K)임을 확인하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293K에서 각각 9.01$\times$$10^{16}$ /㎤, 219 $\textrm{cm}^2$/V.S였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting $\Delta$cr값이 0.2704 eV이며 spin-orbit $\Delta$so 값은 0,1465 eV임을 확인하였다. 10K일 때 광전류 봉우리들은 n=1일때 Al-, Bl-와 Cl-exciton 봉우리임을 알았다.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.68.1-68.1
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• 2010

염료감응형 태양전지에서 가능한 광전자의 이동경로에 대해 살펴보면 빛 에너지를 흡수한 루테늄계 염료는 기저상태에서 여기상태로 전이한 후 광전자의 반도체 전도띠로 전자주입이 이루어진다. 이러한 전자 중 일부는 반도체산화물의 트랩으로의 전이와 트랩에서 염료 기저상태로의 전이가 일어나고 일부 전자는 전해질의 이온종 또는 산화된 염료와 재결합하는 현상이 일어난다. 본 연구에서는 이러한 전자의 재결합을 막고자 p형 반도체인 NiO paste를 제작하여 $TiO_2$ 광전극 층 위에 코팅하였다. 코팅된 NiO 층은 홀수용체로서 염료에 전자를 제공해 주는 역할과 동시에 $TiO_2$ 가전도대로 이동되었던 전자들이 염료의 기저상태의 홀이나 전해질로의 전자 유입이 이루어지는 전자의 재결합을 막는 방벽의 역할을 동시에 하게 된다. 제작된 염료감응형 태양전지 셀의 에너지 변환효율 특성을 알아보기 위하여 1000 W Xe Arc Lamp와 Air Mass 1.5, filter가 장착된 Thermo-Preal (USA) Solar simulator system을 사용하여 개방전압 (Voc), 광전류 (Isc), fill factor (FF), 에너지변환 효율 (${\eta}$)을 조사하였으며 광학현미경을 통해 염료의 흡착 정도를 비교해 보았다. NiO의 코팅 두께나 NiO 나노입자 크기에 따라 염료감응형태양전지에서 에너지변환효율에 미치는 영향을 조사하였다. NiO가 코팅되지 않은 $TiO_2$ 광전극과 비교해 볼 때 NiO 코팅시 Voc와 Isc의 증가로 인해 에너지변환효율이 20% 이상 향상되는 것을 볼 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.329.2-329.2
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• 2014

지난 수년간 태양전지의 광전변환효율을 높이기 위해 자가 조립된 InAs 또는 GaSb와 같은 양자점을 GaAs 단일 p-n 접합에 적용하는 연구를 개발해 왔다. 그러나 양자점의 흡수 단면적에 의한 광 흡수도는 양자점층을 수십 층을 쌓으면 증가하지만 활성층에 결함을 생성시킨다. 생성된 결함은 운반자트랩으로 작용하여 태양전지의 광전변환효율을 감소시킨다. 본 실험에서는 양자점이 적용된 태양전지와 적용되지 않은 태양전지의 광전변환 효율을 비교하고, 깊은준위 과도용량 분광법을 이용하여 결함상태를 측정 및 비교함으로써, 활성층 내부에 생성된 결함이 광전변환 효율에 미치는 영향을 분석하였다. 소자구조는 분자선 증착 방법을 이용하여, 먼저 n+-형 GaAs기판위에 n+-형 GaAs를 250 nm 증착한 후, 도핑이 되지 않은 GaAs활성층을 $1{\mu}m$ 두께로 증착하였다. 마지막으로 n+ 와 p+-형 GaAs를 각각 50, 750 nm 증착함으로써 p-i-n구조를형성하였다. 여기서, n+-형 GaAs 과 p+-형 GaAs의 도핑농도는 동일하게 $5{\times}1018cm-3$로 하였다. 또한 양자점을 태양전지 활성층에 20층을 형성하였다. 이때 p-i-n 태양전지 와 양자점 태양전지의 광전변환 효율은 각각 5.54, 4.22 % 를 나타내었다. p-i-n 태양전지의 개방 전압과 단락전류는 847 mV, 8,81 mA이며 양자점 태양전지는 847 mV, 6.62mA로 확인되었다. 태양전지의 전기적 특성을 측정하기 위해 소자구조 위에 Au(300nm)/Pt(30nm)/Ti(30nm)의 전극을 전자빔증착장치로 증착하였으며, 메사에칭으로 직경 $300{\mu}m$의 태양전지 구조를 제작하였다. 정전용량-전압 특성 및 깊은준위 과도용량 분광법을 이용하여 태양전지의 결함분석 및 이에 따른 광전변환 특성인자와의 상관관계를 논의할 것이다.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.53-63
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• 1998

The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.27 no.6
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• pp.771-781
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• 1994

Monthly measurements made at 15 stations along the axis of the upper Neuse River estuary show a highly variable degree of correlation between concentration of suspended particulate material (SPM) and attenuation coefficient (c) of light as measured by transmissometer. Coefficients of determination along transect lines ranged from $0.12{\sim}0.93$ and calibration slopes ranged from $0.50{\sim}5.63$. When examined on a station-by-station basis, coefficients of determination ranged from $0.21{\sim}0.96$ and calibration slopes ranged from $1.04{\sim}4.94$. Surface calibrations made at individual stations over the full 13-month period were the most consistent of all observations and were considerably better than calibrations made using all of the stations on a given day. Organic content, which can dominate the suspended sediment load during some months, does not appear to explain the variations in reliability of the calibrations. However, an abundance of large aggregates with time-varying size and shape distributions may be partly responsible for variations in optical properties of the sediments, and thus may confound the relationship between SPM and c in the Neuse River estuary Time-varying calibrations to account for non-negligible changes in optical properties may not suffice in complex estuarine environments where the in situ particle dynamics are poorly understood. However, the best use of Beam Transmissometer will continue to be for applications such as detecting water-column events or for use in situations where wide error bars in establishing SPM concentrations are acceptable.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.24 no.12A
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• pp.1899-1909
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• 1999

Considering survivability in fiber-optic transmission networks using B-DCS(Broadband Digital Cross-connect System), a network design problem consists of WCAP(Working Channel Assignment Problem) and SCAP(Spare Channel Assignment Problem). WCAP has not been studied intensively as a part of a network design problem to minimize total network cost while SCAP has been studied in the several papers as an independent problem. In this study, we developed a WSCAP(Working and Spare Channel Assignment Problem) algorithm which is to minimize the total number of spare channels and working channels. After problem description, an IP(Integer Programming) model is formulated and several heuristic algorithms are presented. Finally, the result of a case study is described.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.6
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• pp.1070-1074
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• 2008

Body fat correlation formula induced by using optical method was used white light LED source and electrical method used BIA(Bio-electrical Impedance Analysis) method measured at same time. In the case of BIA method confirmed phase difference of 6 degree and voltage drop of 2.7V at 5V and 50kHz's input signal. In the case of optical method confirmed that optical intensity increased by order of the biceps, the fleshy inside of the thigh and the triceps. We obtained percent body fat of 20% with the body fat correlation formula induced by photo-electricity method.

• Information and Communications Magazine
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• v.27 no.2
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• pp.3-12
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• 2010

본고에서 테라헤르츠 광 신호의 발생과 검출을 위한 다양한 기술에 대하여 리뷰하였다. 이들 중 테라헤르츠 광원기술로서 중요도가 높은, 광전도 신호원, 파라메트릭 신호원 및 차주파수 방식의 신호원 기술을 논의하고, 전자 주입형 양자폭포레이저(Quantum Cascade Laser) 방식과 광혼합(Photomixing) 방식의 신호원 기술 및 이와 관련된 결과와 개발된 테라헤르츠 광신호원의 성능에 대하여도 소개한다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.366-376
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• 1997

$CdGa_2Se_4$, epilayer of tetragonal type are grown on Si(100) substrate by hot wall epitaxy method. The source and substrate temperature is $580^{\circ}C$ and $420^{\circ}C$ respectively, and the thickness of the film is 3 $\mu \textrm{m}$. The crystallihe structure of epilayers were investigated by double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Se vapor the photoconductive characteristics are best. Then we obtained the sensitivity of 0.98, the value of pc/dc of $9.62{\times}10^6$, the MAPD of 321 ㎽ and the rise and decay time of 9 ㎳ and 9.5 ㎳, respectively.